This document summarizes the modeling of the 2SA1680 transistor from Toshiba. It includes the PSpice model parameters and their descriptions. Graphs show simulations of characteristics like reverse/forward early voltage, DC beta, capacitance, hFE vs IC, VCE saturation, VBE saturation, and switching/output characteristics. The simulations closely match experimental measurements, validating the accuracy of the transistor model.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SA1680
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
VAR Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
500
100
10
5.0
-1.0mA -5.0A
IC(Q1)/ IB(Q1)
IC(Q1)
Evaluation Circuit
Q1
Q2SA1680
I1 V1
0Adc
5Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
hFE
10
0.001 0.01 0.1 1 10
- IC(A)
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
-0.001 200.000 196.818 -1.591
-0.002 200.000 196.753 -1.624
-0.005 200.000 196.668 -1.666
-0.010 200.000 196.603 -1.699
-0.020 197.000 196.504 -0.252
-0.050 190.000 193.958 2.083
-0.100 188.000 189.885 1.003
-0.200 180.000 181.965 1.092
-0.500 155.000 158.984 2.570
-1.000 120.000 122.061 1.718
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
-10V
-10mV
-1.0mA -5.0A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA1680
F1
0Adc F
20
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
1
- VCE(SAT) (V)
0.1
0.01
0.001 0.01 0.1
- IC(A)
Simulation Result
VCE(sat)
IC(A) Error(%)
Measurement Simulation
-0.001 -0.025 -0.025 0.000
-0.01 -0.023 -0.023 0.000
-0.1 -0.045 -0.046 2.222
-1 -0.300 -0.301 0.333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
-10V
-10mV
-1.0mA -5.0A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA1680
F1
0Adc F
20
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
1
- VBE(SAT) (V)
0.1
0.01
0.001 0.01 0.1 1
- IC(A)
Simulation Result
VBE(sat)
IC(A) Error(%)
Measurement Simulation
-0.001 -0.600 -0.621 3.500
-0.01 -0.660 -0.687 4.091
-0.1 -0.740 -0.767 3.649
-1 -0.970 -0.978 0.825
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Switching Characteristics
Circuit simulation result
1.5A
1.0A
0.5A
0A
20.8us 21.0us 21.2us 21.4us 21.6us 21.8us
-IB(Q1) -IC(Q1)
Time
Evaluation circuit
L1 R3
R1
50nH 30
L2
50
Q1
PER = 50us R2 Q2SA1680
50nH
PW = 20us
TF = 15ns V2
TR = 15ns 97 -30
TD = 1us
V2 = 6
V1
V1 = -2
0
Simulation result
Measurement Simulation %Error
tstg (us) 0.300 0.292 -2.667
tf (us) 0.100 0.098 -2.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Output Characteristics
Circuit Simulation Result
-2.0A
20mA
-1.6A
15mA
-1.2A 10mA
6mA
-0.8A
4mA
IB=2mA
-0.4A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SA1680
I1 V1
0Adc
5Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006