SPICE MODEL of 2SA2079 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SA2079
MANUFACTURER: Panasonic
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Forward
Forward Early Voltage Characteristic
Ta=25℃
0.08
IB=-300uA
0.07
-250uA
0.06
-200uA
0.05
IC(-A)
0.04 -150uA
0.03 -100uA
0.02
-50uA
0.01
0
0 2 4 6 8 10 12
VCE(-V)
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
400
350
300
250
200
150
100
50
0
-1.0mA -1.0A
I(VC)/I(VB)
I(VC)
Evaluation Circuit
VC
VB
Q1
I1 VCE
-10Vdc
0Adc
0 0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Comparison Graph
Circuit Simulation Result
2SA2079 hFE-IC
400
Measurement
350 Simulation
300
250
hFE
200
150
100
50
0
0.001 0.01 0.1
IC(-A)
Simulation Result
hFE
Ic(mA) Error(%)
Measurement Simulation
0.001 270.38 271.249 0.32
0.002 273.49 273.307 -0.07
0.005 273.61 274.114 0.18
0.01 271.74 272.392 0.24
0.02 266.63 266.767 0.05
0.05 246.26 246.34 0.03
0.1 206.11 206.388 0.13
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
-1.0V
-10mV
-100uA -100mA
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
F1
0Adc F
10
I1
0
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Comparison Graph
Circuit Simulation Result
2SA2079 VBE(sat)-IC
1
Measurement
Simulation
VCE(sat)(-V)
0.1
0.01
0.001 0.01 0.1
IC(-A)
Simulation Result
VCE(sat)(-V)
IC(-A) Error(%)
Measurement Simulation
0.001 0.05 0.052 4.00
0.002 0.0512 0.05159 0.76
0.005 0.0588 0.058 -1.36
0.01 0.07 0.071 1.43
0.02 0.09 0.094 4.44
0.05 0.14 0.1402 0.14
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
-1.0V
-100mV
-1.0mA -100mA
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
F1
0Adc F
10
I1
0
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
2SA2079 VBE(sat)-IC
1
Measurement
0.9
Simulation
0.8
0.7
VBE(sat)(-V)
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001 0.01 0.1
IC(-A)
Simulation Result
VBE(sat)(-V)
IC(-A) Error(%)
Measurement Simulation
0.001 0.653 0.642 -1.68
0.002 0.676 0.665 -1.63
0.005 0.712 0.702 -1.40
0.01 0.744 0.74 -0.54
0.02 0.783 0.788 0.64
0.05 0.844 0.871 3.20
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Output Characteristics
Circuit Simulation Result
-70mA -300uA
-60mA -250uA
-50mA -200uA
-40mA -150uA
-30mA -100uA
-20mA
-50uA
-10mA
0A
0V -2V -4V -6V -8V -10V
I(VC)
V_VCE
Evaluation Circuit
VC
VB
Q1
VCE
10Vdc
I1
0Adc
0 0 0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Output Characteristics Reference
2SA2079 IC-VCE
Ta=25℃
0.08
IB=-300uA
0.07
-250uA
0.06
-200uA
0.05
IC(-A)
0.04 -150uA
0.03 -100uA
0.02
-50uA
0.01
0
0 2 4 6 8 10 12
VCE(-V)
Semiconductor Company, Matsushita Electric lndustrial Co.,Ltd.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006