SPICE MODEL of SSM4K27CT (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: SSM4K27CT
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
0.0 200.0 400.0 600.0 800.0 1000.0
gfs(S)
Drain Current ID (mA)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation Result
Comparison table
Id(mA)
gfs (s)
%Error
Measurement Simulation
50 0.780 0.813 4.22
100 1.110 1.147 3.30
200 1.570 1.614 2.81
500 2.500 2.528 1.11
1000 3.500 3.536 1.02

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V1
V2
3
0
R1
100MEG
U1
SSM4K27CT
V3
0Vdc
V_V1
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V
I(V3)
10mA
100mA
1.0A
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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10.00
100.00
1000.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
DrainCurrentID(mA)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(mA)
VGS(V)
%Error
Measurement Simulation
10 0.837 0.878 4.94
20 0.865 0.901 4.17
50 0.910 0.946 3.97
100 0.970 0.997 2.79
200 1.050 1.070 1.86
500 1.200 1.214 1.18
1000 1.370 1.379 0.65

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R1
100MEG
U1
SSM4K27CT
0
V3
0Vdc
VDS
0Vdc
V1
4
V_VDS
0V 10mV 20mV 30mV 40mV 50mV
I(V3)
0A
50mA
100mA
150mA
200mA
250mA
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 0.25A, VGS = 4V Measurement Simulation %Error
RDS (on) m 175.000 175.004 0.00

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Time*1mA
0 1.0n 2.0n 3.0n 4.0n 5.0n
V(W1:3)
0V
2V
4V
6V
8V
10V
VDD
10
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
0.5
0
D2
Dbreak
U1
SSM4K27CT
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=10V, ID=0.5A,
VGS=5V
Measurement Simulation %Error
Qgs nC 0.300 0.304 1.45
Qgd nC 0.850 0.830 -2.30
Qg nC 2.800 2.849 1.75

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Capacitance Characteristics
Simulation Result
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.200 25.000 24.880 -0.48
0.500 22.000 22.240 1.09
1.000 19.000 18.879 -0.64
2.000 14.500 14.490 -0.07
5.000 8.500 8.500 0.00
10.000 5.000 5.015 0.30
Simulation
Measurement

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Time
0.96us 0.98us 1.00us 1.02us 1.04us 1.06us
1 V(U1:1)*4 2 V(U1:4)
0V
2V
4V
6V
8V
10V
12V
14V
1
>>
0V
4V
8V
12V
2
0
VDD
10Vdc
U1
SSM4K27CT
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 5
L2
30nH
R2
4.7
R1
4.7
L1
30nH
RL
39.8
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=0.25A, VDD=10V
VGS=2.5/0V
Measurement Simulation %Error
ton ns 16.400 16.389 -0.07

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V_V2
0V 0.2V 0.4V 0.6V 0.8V 1.0V
I(V3)
0A
0.2A
0.4A
0.6A
0.8A
1.0A
V2
V1
0
R1
100MEG
V3
0Vdc
U1
SSM4K27CT
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=1.2V
4
1.8
2.5

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V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V -1.2V
I(Vsense)
0A
0.2A
0.4A
0.6A
0.8A
1.0A
VDS
0
Vsense
0Vdc
U1
SSM4K27CT R1
100MEG
Forward Current Characteristics
Circuit Simulation Result
Evaluation Circuit

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0.0
0.2
0.4
0.6
0.8
1.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
DrainreversecurrentIDR(A)
Drain - Source voltage -VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
-VDS(V)
%Error
Measurement Simulation
0.05 0.5600 0.5597 -0.06
0.1 0.6000 0.5967 -0.55
0.2 0.6400 0.6452 0.81
0.4 0.7100 0.7136 0.51
0.6 0.7700 0.7676 -0.31
0.8 0.8200 0.8147 -0.65
1.0 0.8500 0.8572 0.85

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U1
DSSM4K27CT_P
V1
TD = 13ns
TF = 5ns
PW = 1us
PER = 100us
V1 = -9.40v
TR = 5ns
V2 = 10.60v
R1
50
0
Time
0.94us 0.98us 1.02us 1.06us 1.10us 1.14us
I(R1)
-400mA
0A
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Simulation Result
Parameter Unit Measurement Simulation %Error
trj ns 7.200 7.222 0.31
trb ns 13.600 13.537 -0.46
trr ns 20.800 20.759 -0.20

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Reverse Recovery Characteristics Reference
Trj= 7.20 (ns)
Trb= 13.60 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

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V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
3.5mA
4.0mA
4.5mA
5.0mA
R1
0.001m
V1
0Vdc
0
R2
100MEG
U1
SSM4K27CT
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristics
Circuit Simulation Result
Evaluation Circuit

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Zener Voltage Characteristics Reference