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All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TK20J50D
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
3
0
10
20
30
0 10 20 30
gfs(S)
Drain current ID (A)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation Result
Comparison table
Id(A)
gfs (s)
%Error
Measurement Simulation
2 5.600 5.835 4.20
5 8.650 8.909 2.99
10 11.900 12.129 1.92
20 16.200 16.292 0.57
30 19.500 19.214 -1.47
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
4
V1
V2
20
0
V3
0Vdc
U1
TK20J50D
V_V1
0V 2V 4V 6V 8V 10V
I(V3)
0A
10A
20A
30A
40A
50A
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
5
0
10
20
30
40
50
0 2 4 6 8 10
DraincurrentID(A)
Gate-source voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
%Error
Measurement Simulation
1 5.050 5.222 3.40
2 5.350 5.421 1.32
5 5.900 5.826 -1.26
10 6.350 6.300 -0.79
20 7.000 7.001 0.01
30 7.500 7.563 0.85
40 7.950 8.054 1.31
50 8.350 8.499 1.78
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
6
0
V3
0Vdc
VDS
V1
10
U1
TK20J50D
V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V 2.0V
I(V3)
0A
1A
2A
3A
4A
5A
6A
7A
8A
9A
10A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 10A, VGS = 10V Measurement Simulation %Error
RDS (on)  0.220 0.220 0.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
7
VDD
400
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
20
0
D2
DbreakU1
TK20J50D
Time*1mA
0 20n 40n 60n 80n
V(W1:3)
0V
4V
8V
12V
16V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=400V, ID=20A,
VGS=10V
Measurement Simulation %Error
Qgs nC 13.000 12.662 -2.60
Qgd nC 19.000 18.390 -3.21
Qg nC 47.000 47.975 2.07
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
8
Capacitance Characteristics
Simulation Result
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.5 3400.000 3325.000 -2.21
1 2980.000 3004.000 0.81
2 2430.000 2484.000 2.22
5 1530.000 1520.000 -0.65
10 825.000 802.600 -2.72
20 312.000 324.000 3.85
Simulation
Measurement
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
9
U1
TK20J50D
0
VDD
200Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
L2
50nH
R2
50
R1
50
L1
30nH
RL
20
Time
0.5us 0.7us 0.9us 1.1us 1.3us 1.5us 1.7us
V(U1:G) V(U1:D)/20
0V
2V
4V
6V
8V
10V
12V
14V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=10A, VDD=200V
VGS=10/0V
Measurement Simulation %Error
ton ns 100.000 100.131 0.13
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
10
V2
0V1
0
0
V3
0Vdc
U1
TK20J50D
V_V2
0V 10V 20V 30V 40V 50V
I(V3)
0A
10A
20A
30A
40A
50A
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=6V
8
7
7.5
6.5
10
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
11
VDS
0
Vsense
0Vdc
U1
TK20J50D
V_VDS
0V -0.3V -0.6V -0.9V -1.2V -1.5V
I(Vsense)
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation Result
Evaluation Circuit
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
12
0.1
1
10
100
0 0.3 0.6 0.9 1.2 1.5
DrianreversecurrentIDR(A)
Drain - source voltage-VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
-VDS(V)
%Error
Measurement Simulation
0.1 0.590 0.5882 -0.30
0.2 0.620 0.6159 -0.67
0.5 0.655 0.6547 -0.05
1 0.685 0.6877 0.39
2 0.725 0.7272 0.31
5 0.795 0.7990 0.51
10 0.880 0.8784 -0.19
20 0.995 0.9937 -0.14
50 1.260 1.2562 -0.30
70 1.400 1.4107 0.76
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
13
V1
TD = 1us
TF = 20ns
PW = 20us
PER = 50us
V1 = -9.40v
TR = 10ns
V2 = 10.65v
R1
50
0
U1
DTK20J50D_P
Time
8us 12us 16us 20us 24us 28us 32us 36us 40us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj us 0.420 0.421 0.24
trb us 1.280 1.300 1.56
trr us 1.700 1.721 1.24
All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
14
Reverse Recovery Characteristics Reference
Trj = 0.42 (us)
Trb = 1.28(us)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
Relation between trj and trb
Example
Measurement

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SPICE MODEL of TK20J50D (Professional+BDP Model) in SPICE PARK

  • 1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: MOSFET (Professional Model) PART NUMBER: TK20J50D MANUFACTURER: TOSHIBA REMARK: Body Diode (Professional Model)
  • 2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 2 MOSFET MODEL PSpice model parameter Model description LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility
  • 3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 3 0 10 20 30 0 10 20 30 gfs(S) Drain current ID (A) Measurement Simulation Transconductance Characteristics Circuit Simulation Result Comparison table Id(A) gfs (s) %Error Measurement Simulation 2 5.600 5.835 4.20 5 8.650 8.909 2.99 10 11.900 12.129 1.92 20 16.200 16.292 0.57 30 19.500 19.214 -1.47
  • 4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 4 V1 V2 20 0 V3 0Vdc U1 TK20J50D V_V1 0V 2V 4V 6V 8V 10V I(V3) 0A 10A 20A 30A 40A 50A Vgs-Id Characteristics Circuit Simulation result Evaluation circuit
  • 5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 5 0 10 20 30 40 50 0 2 4 6 8 10 DraincurrentID(A) Gate-source voltage VGS (V) Measurement Simulation Comparison Graph Circuit Simulation Result Simulation Result ID(A) VGS(V) %Error Measurement Simulation 1 5.050 5.222 3.40 2 5.350 5.421 1.32 5 5.900 5.826 -1.26 10 6.350 6.300 -0.79 20 7.000 7.001 0.01 30 7.500 7.563 0.85 40 7.950 8.054 1.31 50 8.350 8.499 1.78
  • 6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 6 0 V3 0Vdc VDS V1 10 U1 TK20J50D V_VDS 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V 2.0V I(V3) 0A 1A 2A 3A 4A 5A 6A 7A 8A 9A 10A Rds(on) Characteristics Circuit Simulation result Evaluation circuit Simulation Result ID = 10A, VGS = 10V Measurement Simulation %Error RDS (on)  0.220 0.220 0.00
  • 7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 7 VDD 400 I1TD = 0 TF = 5n PW = 600u PER = 1000u I1 = 0 I2 = 1m TR = 5n - + W1 ION = 0uA IOFF = 1mA W I2 20 0 D2 DbreakU1 TK20J50D Time*1mA 0 20n 40n 60n 80n V(W1:3) 0V 4V 8V 12V 16V Gate Charge Characteristics Circuit Simulation result Evaluation circuit Simulation Result VDD=400V, ID=20A, VGS=10V Measurement Simulation %Error Qgs nC 13.000 12.662 -2.60 Qgd nC 19.000 18.390 -3.21 Qg nC 47.000 47.975 2.07
  • 8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 8 Capacitance Characteristics Simulation Result VDS (V) Cbd (pF) %Error Measurement Simulation 0.5 3400.000 3325.000 -2.21 1 2980.000 3004.000 0.81 2 2430.000 2484.000 2.22 5 1530.000 1520.000 -0.65 10 825.000 802.600 -2.72 20 312.000 324.000 3.85 Simulation Measurement
  • 9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 9 U1 TK20J50D 0 VDD 200Vdc V2 TD = 1u TF = 5n PW = 10u PER = 20u V1 = 0 TR = 5n V2 = 20 L2 50nH R2 50 R1 50 L1 30nH RL 20 Time 0.5us 0.7us 0.9us 1.1us 1.3us 1.5us 1.7us V(U1:G) V(U1:D)/20 0V 2V 4V 6V 8V 10V 12V 14V Switching Time Characteristics Circuit Simulation result Evaluation circuit Simulation Result ID=10A, VDD=200V VGS=10/0V Measurement Simulation %Error ton ns 100.000 100.131 0.13
  • 10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 10 V2 0V1 0 0 V3 0Vdc U1 TK20J50D V_V2 0V 10V 20V 30V 40V 50V I(V3) 0A 10A 20A 30A 40A 50A Output Characteristics Circuit Simulation result Evaluation circuit VGS=6V 8 7 7.5 6.5 10
  • 11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 11 VDS 0 Vsense 0Vdc U1 TK20J50D V_VDS 0V -0.3V -0.6V -0.9V -1.2V -1.5V I(Vsense) 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation Result Evaluation Circuit
  • 12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 12 0.1 1 10 100 0 0.3 0.6 0.9 1.2 1.5 DrianreversecurrentIDR(A) Drain - source voltage-VDS (V) Measurement Simulation Comparison Graph Circuit Simulation Result Simulation Result IDR(A) -VDS(V) %Error Measurement Simulation 0.1 0.590 0.5882 -0.30 0.2 0.620 0.6159 -0.67 0.5 0.655 0.6547 -0.05 1 0.685 0.6877 0.39 2 0.725 0.7272 0.31 5 0.795 0.7990 0.51 10 0.880 0.8784 -0.19 20 0.995 0.9937 -0.14 50 1.260 1.2562 -0.30 70 1.400 1.4107 0.76
  • 13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 13 V1 TD = 1us TF = 20ns PW = 20us PER = 50us V1 = -9.40v TR = 10ns V2 = 10.65v R1 50 0 U1 DTK20J50D_P Time 8us 12us 16us 20us 24us 28us 32us 36us 40us I(R1) -400mA -300mA -200mA -100mA -0mA 100mA 200mA 300mA 400mA Reverse Recovery Characteristics Circuit Simulation Result Evaluation Circuit Compare Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj us 0.420 0.421 0.24 trb us 1.280 1.300 1.56 trr us 1.700 1.721 1.24
  • 14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010 14 Reverse Recovery Characteristics Reference Trj = 0.42 (us) Trb = 1.28(us) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Relation between trj and trb Example Measurement