This document provides a 14-page report summarizing the simulation and measurement results of various electrical characteristics of the MOSFET transistor TPCA8063-H manufactured by Toshiba. The report includes model parameters, transconductance characteristics, Vgs-Id characteristics, Rds(on) characteristics, gate charge characteristics, capacitance characteristics, switching time characteristics, output characteristics, forward current characteristics, and reverse recovery characteristics. Simulation results are presented and compared to measurement data with percent error calculations.