SPICE MODEL of TK70X04K3 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Professional Model)
PART NUMBER: TK70X04K3
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model)

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
3
0.00
40.00
80.00
120.00
0.0 20.0 40.0 60.0 80.0 100.0
gfs(S)
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation Result
Comparison table
Id(A)
gfs (s)
%Error
Measurement Simulation
5 27.500 28.679 4.29
10 39.000 40.062 2.72
20 55.000 55.685 1.25
50 86.000 85.143 -1.00
100 118.000 116.095 -1.61

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V1
0Vdc
V2
10
0
V3
0Vdc
U1
TK70X04K3
V_V1
0V 2V 4V 6V 8V 10V
I(V3)
0A
40A
80A
120A
160A
200A
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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0.00
40.00
80.00
120.00
160.00
200.00
0.0 2.0 4.0 6.0 8.0 10.0
DrainCurrentID(A)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
%Error
Measurement Simulation
5 4.305 4.516 4.91
10 4.550 4.662 2.45
20 4.750 4.870 2.53
40 5.050 5.171 2.40
80 5.450 5.610 2.93
120 5.800 5.956 2.68
160 6.200 6.254 0.87

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0
V3
0Vdc
VDS
0Vdc
V1
10
U1
TK70X04K3
V_VDS
0V 25mV 50mV 75mV 100mV 125mV 150mV
I(V3)
0A
5A
10A
15A
20A
25A
30A
35A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID =35A, VGS = 10V Measurement Simulation %Error
RDS (on) m 3.700 3.699 -0.03

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VDD
32
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
70
0
D2
DbreakU1
TK70X04K3
Time*1mA
0 20n 40n 60n 80n 100n
V(W1:3)
0V
4V
8V
12V
16V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=32V, ID=70A,
VGS=10V
Unit Measurement Simulation %Error
Qgs nC 18.000 18.000 0.00
Qgd nC 24.000 23.797 -0.85
Qg nC 62.000 62.892 1.44

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Capacitance Characteristic
Simulation Result
VDS(V)
Cbd(pF)
%Error
Measurement Simulation
0.1 1080.000 1079.000 -0.09
0.2 920.000 918.000 -0.22
0.5 670.000 672.200 0.33
1 495.000 499.200 0.85
2 355.000 357.800 0.79
5 225.000 223.300 -0.76
10 155.000 154.440 -0.36
20 108.000 106.290 -1.58
40 75.000 72.960 -2.72
Simulation
Measurement

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0
VDD
20.1Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
L2
50nH
R2
4.7
R1
4.7
L1
30nH
U1
TK70X04K3
RL
0.57
Time
0.80us 0.90us 1.00us 1.10us 1.20us 1.30us
V(U1:G) V(U1:D)/2.01
0V
2V
4V
6V
8V
10V
12V
14V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=35A, VDD=20V
VGS=10/0V
Unit Measurement Simulation %Error
ton ns 55.000 54.960 -0.07

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V_V2
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(V3)
0A
40A
80A
120A
160A
200A
V2
2V1
0
0
V3
0Vdc
U1
TK70X04K3
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=5.5V
10
7
8
6
6.5

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VDS
0
Vsense
0Vdc
U1
TK70X04K3
V_VDS
0V -0.4V -0.8V -1.2V -1.6V -2.0V
I(Vsense)
1.0A
10A
100A
1.0KA
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

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1.0
10.0
100.0
1000.0
0 0.4 0.8 1.2 1.6 2
DrainreversecurrentIDR(A)
Drain - Source voltage -VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR (A)
-VDS (V)
%Error
Measurement Simulation
1 0.640 0.6381 -0.30
2 0.660 0.6617 0.26
5 0.700 0.7017 0.25
10 0.740 0.7412 0.16
20 0.795 0.7911 -0.49
50 0.885 0.8856 0.06
100 1.000 1.0018 0.18
200 1.200 1.1998 -0.02

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Time
19.2us 19.6us 20.0us 20.4us 20.8us 21.2us
I(R1)
-400mA
0A
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 28.000 28.101 0.36
trb ns 45.000 44.754 -0.55
trr ns 73.000 72.855 -0.20
V1
TD = 50ns
TF = 20ns
PW = 20us
PER = 50us
V1 = -9.40v
TR = 10ns
V2 = 10.60v
R1
50
0
U1
DTK70X04K3_P

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Reverse Recovery Characteristic Reference
Trj=28.0(ns)
Trb=45.0(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement