SPICE MODEL of TPC8014 (Standard+BDS Model) in SPICE PARK

All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TPC8014
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters) /
ESD Protection Diode

2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3
0
10
20
30
40
50
0.0 4.0 8.0 12.0 16.0 20.0
Transconductancegfs(S)
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A)
gfs(S)
%Error
Measurement Simulation
0.5 6.100 6.381 4.61
1 8.750 9.000 2.86
2 12.400 12.681 2.27
5 19.800 19.902 0.52
10 28.000 27.913 -0.31
20 38.900 39.020 0.31

4
V1
0Vdc
V2
10
0
V3
0Vdc
U1
TPC8014
V_V1
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(V3)
0A
4A
8A
12A
16A
20A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

5
0.00
4.00
8.00
12.00
16.00
20.00
0.0 1.0 2.0 3.0 4.0
DrainCurrentID(A)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Simulation Result
ID(A)
VGS(V)
%Error
0.5 2.400 2.450 2.08
1 2.500 2.515 0.59
2 2.600 2.607 0.27
5 2.800 2.791 -0.32
10 3.000 3.000 0.00
20 3.300 3.299 -0.04

6
U1
TPC8014
0
V3
0Vdc
VDS
0Vdc
V1
10
V_VDS
0V 20mV 40mV 60mV
I(V3)
0A
0.5A
1.0A
1.5A
2.0A
2.5A
3.0A
3.5A
4.0A
4.5A
5.0A
5.5A
Rds(on) Characteristic
Evaluation circuit
Simulation Result
ID=5.5A, VGS=10V Unit Measurement Simulation %Error
RDS (on) m 11.000 11.000 0.00

7
VDD
24
I1
TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
11
0
D2
Dbreak
0
U1
TPC8014
Time*1mA
0 10n 20n 30n 40n 50n 60n
V(W1:2)
0V
5V
10V
15V
20V
Gate Charge Characteristic
Evaluation circuit
Simulation Result
VDD=24V, ID=11A,
VGS=10V
Unit Measurement Simulation %Error
Qgs nC 5.000 4.959 -0.83
Qgd nC 9.000 8.997 -0.04
Qg nC 38.000 25.047 -34.09

8
Capacitance Characteristic
Simulation Result
VDS(V)
Cbd(pF)
%Error
0.100 300.000 291.900 -2.70
0.200 255.000 256.100 0.43
0.500 190.000 191.630 0.86
1.000 140.000 139.900 -0.07
2.000 97.000 95.500 -1.55
5.000 55.000 53.780 -2.22
10.000 35.000 33.840 -3.31
20.000 21.500 21.030 -2.19
Simulation
Measurement

9
0
VDD
15Vdc
U1
TPC8014
L1
30nH
V2
TD = 1u
TF = 5n
PW = 10u
PER = 1m
V1 = 0
TR = 5n
V2 = 20
R1
4.7
L2
50nH
R2
4.7
RL
2.7
Time
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(U1:4) V(U1:5)/1.5
-2V
0V
2V
4V
6V
8V
10V
12V
14V
Switching Time Characteristics
Evaluation circuit
Simulation Result
ID=5.5A, VDD=15V
VGS=0/10V
Unit Measurement Simulation %Error
ton ns 19.000 18.995 -0.03

10
V2
5
V1
0
0
V3
0Vdc
U1
TPC8014
V_V2
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
4A
8A
12A
16A
20A
Output Characteristic
Evaluation circuit
VGS=2.6V
8
2.7
3.0
10
3. 4
6
2.8
2.9
3.1
3.2
3.3
3. 5
4
6
8

11
U1
TPC8014
VDS
0
Vsense
0Vdc
V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
100mA
1.0A
10A
100A
BODY DIODE SPICE MODEL
Forward Current Characteristic
Evaluation Circuit

12
0.1
1.0
10.0
100.0
0 0.2 0.4 0.6 0.8 1 1.2
DrainreversecurrentIDR(A)
Drain-source voltage: -VDS (V)
Measurement
Simulation
Comparison Graph
Simulation Result
IDR (A)
VDS (V)
%Error
0.1 0.6200 0.6156 -0.71
0.2 0.6350 0.6394 0.69
0.5 0.6700 0.6722 0.32
1 0.7000 0.6993 -0.10
2 0.7300 0.7307 0.10
5 0.7900 0.7863 -0.47
10 0.8500 0.8504 0.05
20 0.9500 0.9516 0.16
40 1.1200 1.1195 -0.04

13
Time
0.7us 0.9us 1.1us 1.3us 1.5us 1.7us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Evaluation Circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation %Error
trj ns 16.000 16.271 1.69
V1
TD = 120ns
TF = 10ns
PW = 1us
PER = 100us
V1 = -9.4v
TR = 10ns
V2 = 10.6v
U1
TPC8014
R1
50
0

14
Reverse Recovery Characteristic Reference
Trj=16.00(ns)
Trb=44.00(ns)
Conditions: Ifwd=lrev=0.2(A), Rl=50
Relation between trj and trb
Example
Measurement

15
V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
ESD PROTECTION DIODE
Zener Voltage Characteristic
Evaluation Circuit
U1
TPC8014
V1
0Vdc
R1
0.001m
0
R2
100MEG

16
Zener Voltage Characteristic Reference

SPICE MODEL of TPC8014 (Standard+BDS Model) in SPICE PARK

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