This document is a detailed device modeling report for the power MOSFET part number TPCA8108 manufactured by Toshiba, including various parameters and characteristics. It contains simulation results and comparisons for transconductance, drain-source resistance, gate charge, and body diode characteristics. The report also evaluates performance metrics such as switching time and reverse recovery characteristics, showcasing measurement and simulation data.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: TPCA8108
MANUFACTURER: TOSHIBA
Body Diode (Professional Model) / ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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3
0
10
20
30
40
50
60
70
0 10 20 30 40
Gfs(S)
Drain Current ID (-A)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation Result
Comparison table
-Id(A)
gfs(S)
%Error
Measurement Simulation
5 23.000 22.869 -0.57
10 32.500 32.027 -1.46
20 45.000 44.675 -0.72
30 53.500 54.126 1.17
40 60.000 61.981 3.30

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4
V1
0Vdc
V2
-10
0
V3
0Vdc
U1
TPCA8108
V_V1
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
0A
-20A
-40A
-60A
-80A
-100A
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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5
0
20
40
60
80
100
0.0 1.0 2.0 3.0 4.0 5.0
DrainCurrentID(-A)
Gate - Source Voltage VGS (-V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(A)
-VGS(V)
%Error
Measurement Simulation
2 3.100 3.071 -0.95
5 3.250 3.231 -0.59
10 3.400 3.413 0.38
20 3.600 3.673 2.03
40 3.950 4.048 2.47
60 4.250 4.340 2.12
80 4.550 4.590 0.87

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6
0
U1
TPCA8108
V3
0Vdc
VDS
0Vdc
V1
-10
V_VDS
0V -40mV -80mV -120mV -160mV
I(V3)
0A
-5A
-10A
-15A
-20A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
Condition: ID= -20A, VGS= -10V
Parameter Measurement Simulation %Error
RDS (on) mΩ 7.700 7.700 0.00

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Time*1mA
0 40n 80n 120n 160n
V(W1:4)
0V
-4V
-8V
-12V
-16V
VDD
-32
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
40
0
D2
Dbreak
0
U1
TPCA8108
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=-32V, ID=-40A, VGS=-10V
Parameter Measurement Simulation %Error
Qgs nC 20.000 19.862 -0.69
Qgd nC 32.000 31.289 -2.22
Qg nC 100.000 103.672 3.67

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Capacitance Characteristics
Simulation Result
-VDS (V)
Cbd(pF)
%Error
Measurement Simulation
0.1 600.000 594.840 -0.86
0.2 570.000 569.640 -0.06
0.5 510.000 508.700 -0.25
1 440.000 438.000 -0.45
2 355.000 352.500 -0.70
5 240.000 240.700 0.29
10 170.000 171.250 0.74
20 120.000 118.660 -1.12
40 80.000 81.000 1.25
Simulation
Measurement

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Time
0.96us 1.00us 1.04us 1.08us 1.12us 1.16us
V(U1:4) V(U1:5)/2
0V
-2V
-4V
-6V
-8V
-10V
-12V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
Condition: VGS=0/-10V, ID= -20A, VDD= -20V
Parameter Measurement Simulation %Error
ton ns 26.000 26.319 1.23
0
VDD
-20Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 1000u
V1 = 0
TR = 5n
V2 = 20
U1
TPCA8108
L2
50nH
R2
4.7
R1
4.7
L1
30nH
RL
1

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V2
-5
V1
0
0
V3
0Vdc
U1
TPCA8108
V_V2
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
0A
-20A
-40A
-60A
-80A
-100A
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS= -3.5
-8
-4
-5
-4.5
-5.5-6
-10

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VDS
0
Vsense
0Vdc
U1
TPCA8108
V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
-1.0A
-1.0KA
BODY DIODE SPICE MODEL
Forward Current Characteristics
Circuit Simulation Result
Evaluation Circuit

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1
10
100
1,000
0 0.2 0.4 0.6 0.8 1 1.2
DrainreversecurrentIDR(-A)
Drain - Source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-IDR(A)
VDS (V)
%Error
Measurement Simulation
1 0.680 0.679 -0.19
2 0.700 0.701 0.10
5 0.735 0.738 0.35
10 0.775 0.774 -0.18
20 0.820 0.819 -0.18
50 0.900 0.901 0.13
100 1.000 1.000 -0.03

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R1
50
0
U1
DTPCA8108_P
V1
TD = 60ns
TF = 10ns
PW = 1us
PER = 100us
V1 = -9.4v
TR = 10ns
V2 = 10.65v
Time
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us 1.6us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Parameter Measurement Simulation %Error
trj ns 28.000 27.977 -0.08
trb ns 104.000 104.055 0.05
trr ns 132.000 132.032 0.02

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Reverse Recovery Characteristics Reference
Trj= 28.0 (ns)
Trb= 104.0 (ns)
Conditions: Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

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R1
0.001mV1
0Vdc
0
U1
TPCA8108
R2
100MEG
V_V1
0V -5V -10V -15V -20V -25V -30V -35V -40V -45V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristics
Circuit Simulation Result
Evaluation Circuit

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Zener Voltage Characteristics Reference