This document provides a summary of SPICE modeling parameters for a TOSHIBA SSM3J132TU power MOSFET and its internal body and ESD protection diodes. It includes 14 pages describing the MOSFET and diode models, with simulation results comparing measurements to modeled characteristics including transconductance, drain current, gate charge, switching time, and reverse recovery. Circuit schematics and simulation results are provided to validate the SPICE models against real-world device measurements.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Standard)
PART NUMBER: SSM3J132TU
MANUFACTURER: TOSHIBA
Body Diode (Standard) / ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
3
0
10
20
30
40
50
0 2 4 6 8 10
Gfs(S)
Drain Current ID (-A)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation Result
Comparison table
-Id(A)
gfs(S)
Error (%)
Measurement Simulation
0.1 3.875 3.855 -0.52
0.2 5.500 5.444 -1.02
0.5 8.750 8.582 -1.92
1 12.400 12.094 -2.47
2 17.500 17.018 -2.75
5 27.500 26.645 -3.11
10 38.750 37.270 -3.82

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4
V1
0Vdc
V2
-3
0
V3
0Vdc
U1
SSM3J132TU
V_V1
0V -0.25V -0.50V -0.75V -1.00V -1.25V -1.50V
I(V3)
-100mA
-10A
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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5
100
1000
10000
0.0 0.5 1.0 1.5
DrainCurrentID(-mA)
Gate - Source Voltage VGS (-V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(mA)
-VGS(V)
Error (%)
Measurement Simulation
100 0.700 0.705 0.71
200 0.720 0.726 0.83
500 0.760 0.769 1.18
1000 0.805 0.817 1.49
2000 0.870 0.886 1.84
5000 1.000 1.023 2.30
10000 1.150 1.180 2.61

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6
0
V3
0Vdc
VDS
0Vdc
VGS
-4.5
U1
SSM3J132TU
V_VDS
0V -10mV -20mV -30mV -40mV -50mV -60mV -70mV
I(V3)
0A
-1.0A
-2.0A
-3.0A
-4.0A
-5.0A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -5A, VGS= -4.5V Measurement Simulation Error (%)
RDS (on) mΩ 14.000 14.000 0.00

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7
VDD
-6
I1TD = 0
TF = 1n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 0.5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
5.4
0
D2
Dbreak
U1
SSM3J132TU
Time*1mA
0 10n 20n 30n 40n 50n
V(W1:4)
0V
-2.0V
-4.0V
-6.0V
-8.0V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD= -6V ,ID=-5.4A
,VGS= -4.5V
Measurement Simulation Error (%)
Qgs nC 4.300 4.380 1.86
Qgd nC 8.000 7.888 -1.40
Qg nC 33.000 26.524 -19.62

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Time
0.8us 0.9us 1.0us 1.1us 1.2us 1.3us
V(U1:G)*4 V(U1:D)
0V
-2V
-4V
-6V
-8V
-10V
-12V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -1A, VDD= -10V
VGS=0/-2.5V
Measurement Simulation Error (%)
ton ns 38.000 38.074 0.19
0
VDD
-10.03Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 5
U1
SSM3J132TU
L2
50nH
R2
4.7
R1
4.7
L1
30nH
RL
10

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9
V2
-0.5
V1
0
0
V3
0Vdc
U1
SSM3J132TU
V_V2
0V -100mV -200mV -300mV -400mV -500mV
I(V3)
0A
-5A
-10A
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS= -1.2-2.5 -1.8
-4.5
-1.5

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10
VDS
0
Vsense
0Vdc
U1
SSM3J132TU
V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
1.0mA
10mA
100mA
1.0A
10A
BODY DIODE SPICE MODEL
Forward Current Characteristics
Circuit Simulation Result
Evaluation Circuit

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0.001
0.010
0.100
1.000
10.000
0 0.2 0.4 0.6 0.8 1 1.2
DrainreversecurrentIDR(A)
Drain - Source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VDS (V)
Error (%)
Measurement Simulation
0.001 0.278 0.277 -0.36
0.002 0.295 0.295 0.00
0.005 0.320 0.320 0.00
0.01 0.340 0.338 -0.59
0.02 0.357 0.357 0.00
0.05 0.385 0.383 -0.52
0.1 0.405 0.406 0.25
0.2 0.430 0.432 0.47
0.5 0.475 0.474 -0.21
1 0.515 0.516 0.19
2 0.568 0.566 -0.35
5 0.660 0.659 -0.15
10 0.770 0.762 -1.04

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12
V1
TD = 435ns
TF = 15ns
PW = 10us
PER = 100us
V1 = -9.55v
TR = 10ns
V2 = 10.4v
R1
50
0
U1
SSM3J132TU
Time
9.6us 10.0us 10.4us 10.8us 11.2us 11.6us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 16.000 16.311 1.94

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Reverse Recovery Characteristics Reference
Trj= 16 (ns)
Trb= 120 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

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14
V1
0Vdc
R1
0.001m
0
U1
SSM3J132TU R2
100MEG
V_V1
0V -10V -20V -30V -40V -50V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristics
Circuit Simulation Result
Evaluation Circuit

15. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
15
Zener Voltage Characteristics Reference