This document provides a summary of SPICE model parameters and simulation results for the power MOSFET and body diode components in the TPC8115 device from Toshiba. The model parameters, evaluation circuits, and comparison of measurement and simulation results are given for key electrical characteristics including transconductance, drain current, gate charge, switching time, and reverse recovery. Simulation results show good agreement with measurements for various operating conditions of the MOSFET and diode components in the device.
Human Factors of XR: Using Human Factors to Design XR Systems
SPICE MODEL of TPC8115 (Standard+BDS Model) in SPICE PARK
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Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: TPC8115
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection Diode
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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0
20
40
60
80
0 2 4 6 8 10
gfs(S)
Drain Current ID (-A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
-Id(A)
gfs(S)
Error (%)
Measurement Simulation
1 16.750 17.179 2.56
2 23.500 24.122 2.65
5 38.500 37.613 -2.30
10 54.000 52.373 -3.01
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V1
0Vdc
V2
-10
0
V3
0Vdc
U1
TPC8115
V_V1
0V -1.0V -2.0V -3.0V -4.0V
I(V3)
0A
-4A
-8A
-12A
-16A
-20A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
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Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(A)
-VGS(V)
Error (%)
Measurement Simulation
1 1.355 1.364 0.66
2 1.425 1.413 -0.84
5 1.525 1.510 -0.98
10 1.630 1.621 -0.55
20 1.795 1.781 -0.78
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Reverse Recovery Characteristic Reference
Trj= 28 (ns)
Trb= 208 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement
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R1
0.001m
V1
0Vdc
0
U1
TPC8115
R2
100MEG
V_V1
0V -5V -10V -15V -20V -25V -30V -35V -40V -45V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
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Zener Voltage Characteristic Reference