SPICE MODEL of 2SK3497 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK3497 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of 2SK3497 (Standard+BDS Model) in SPICE PARK
- 1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: MOSFET (Model Parameters) PART NUMBER: 2SK3497 MANUFACTURER: TOSHIBA REMARK: Body Diode (Model Parameters) / ESD Protection Diode
- 2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 2 MOSFET MODEL PSpice model parameter Model description LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility
- 3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 3 0 6 12 18 24 0.0 2.0 4.0 6.0 8.0 10.0 gfs(S) Drain Current ID (A) Measurement Simulation Transconductance Characteristic Circuit Simulation Result Comparison table Id(A) gfs(S) %Error Measurement Simulation 0.2 3.450 3.590 4.05 0.5 5.400 5.568 3.12 1 7.550 7.700 1.99 2 10.600 10.556 -0.42 5 15.400 15.727 2.12 10 20.200 20.882 3.38
- 4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 4 V1 0Vdc V2 10 0 V3 0Vdc U1 2SK3497 V_V1 0V 1.0V 2.0V 3.0V 4.0V I(V3) 0A 2A 4A 6A 8A 10A Vgs-Id Characteristic Circuit Simulation result Evaluation circuit
- 5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 5 0.00 2.00 4.00 6.00 8.00 10.00 0.0 1.0 2.0 3.0 4.0 DrainCurrentID(A) Gate - Source Voltage VGS (V) Measurement Simulation Comparison Graph Circuit Simulation Result Simulation Result ID(A) VGS(V) %Error Measurement Simulation 0.2 2.000 2.020 0.98 0.5 2.070 2.085 0.72 1 2.150 2.160 0.47 2 2.250 2.269 0.86 5 2.500 2.496 -0.15 10 2.800 2.768 -1.14
- 6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 6 0 V3 0Vdc VDS 0Vdc V1 7 U1 2SK3497 V_VDS 0V 150mV 300mV 450mV 600mV 750mV I(V3) 0A 1.0A 2.0A 3.0A 4.0A 5.0A Rds(on) Characteristic Circuit Simulation result Evaluation circuit Simulation Result ID=5A, VGS=7V Unit Measurement Simulation %Error RDS (on) 0.150 0.144 -4.03
- 7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 7 VDD 30 I1TD = 0 TF = 5n PW = 600u PER = 1000u I1 = 0 I2 = 1m TR = 5n - + W1 ION = 0uA IOFF = 1mA W I2 4 0 D2 Dbreak U1 2SK3497 Time*1mA 0 10n 20n 30n 40n 50n 60n V(W1:3) 0V 2V 4V 6V 8V 10V Gate Charge Characteristic Circuit Simulation result Evaluation circuit Simulation Result VDD=30V, ID=4A, VGS=8V Unit Measurement Simulation %Error Qgs nC 4.050 4.111 1.50 Qgd nC 12.200 12.139 -0.50 Qg nC 40.000 25.741 -35.65
- 8. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 8 0 2 4 6 8 0 10 20 30 40 50 60 Gate-SourcevoltageVgs(V) Gate Charge Qg (nC) Gate Charge Characteristics Reference
- 9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 9 Capacitance Characteristic Simulation Result VDS(V) Cbd(pF) %Error Measurement Simulation 0.100 1700.000 1689.000 -0.65 0.200 1620.000 1623.800 0.23 0.500 1450.000 1458.600 0.59 1.000 1250.000 1256.000 0.48 2.000 1000.000 997.700 -0.23 5.000 660.000 646.600 -2.03 10.000 430.000 430.250 0.06 20.000 270.000 274.000 1.48 50.000 140.000 145.320 3.80 100.000 90.000 88.650 -1.50 Simulation Measurement
- 10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 10 0 VDD 30Vdc V2 TD = 1u TF = 5n PW = 10u PER = 20u V1 = 0 TR = 5n V2 = 10 L2 50nH R2 50 R1 50 U1 2SK3497 L1 30nH RL 7.5 Time 0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us V(U1:G) V(U1:D)/6 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V Switching Time Characteristics Circuit Simulation result Evaluation circuit Simulation Result ID=4A, VDD=30V VGS=0/5V Unit Measurement Simulation %Error ton ns 96.000 122.591 27.70
- 11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 11 Switching Time Characteristics Reference
- 12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 12 V2 10V1 0 0 V3 0Vdc U1 2SK3497 V_V2 0V 2V 4V 6V 8V 10V I(V3) 0A 4A 8A 12A 16A 20A Output Characteristic Circuit Simulation result Evaluation circuit VGS=2.5V 7 3 3.5 4 5 6
- 13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 13 VSD 0 Vsense 0Vdc U1 2SK3497 V_VSD 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V I(Vsense) 0A 1A 2A 3A 4A 5A 6A 7A 8A 9A 10A BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result Evaluation Circuit
- 14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 14 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 DrainreversecurrentIDR(A) Source - Drain voltage VSD (V) Measurement Simulation Comparison Graph Circuit Simulation Result Simulation Result IDR (A) -VDS (V) %Error Measurement Simulation 0.01 0.5600 0.5616 0.29 0.02 0.5750 0.5775 0.43 0.05 0.6000 0.5988 -0.19 0.1 0.6200 0.6157 -0.69 0.2 0.6350 0.6340 -0.16 0.5 0.6650 0.6626 -0.36 1 0.6900 0.6917 0.24 2 0.7300 0.7341 0.56 5 0.8360 0.8354 -0.07 10 0.9860 0.9855 -0.05
- 15. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 15 Forward Current Characteristics Reference
- 16. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 16 Time 16us 17us 18us 19us 20us 21us 22us 23us 24us 25us I(R1) -400mA -300mA -200mA -100mA -0mA 100mA 200mA 300mA 400mA Reverse Recovery Characteristics Circuit Simulation Result Evaluation Circuit Compare Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 180.000 182.916 1.62 V1 TD = 0.4us TF = 10ns PW = 20us PER = 50us V1 = -9.40v TR = 10ns V2 = 10.60v R1 50 0 U1 2SK3497
- 17. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 17 Reverse Recovery Characteristic Reference Trj=180.00(ns) Trb=220.00(ns) Conditions: Ifwd=lrev=0.2(A), Rl=50 Relation between trj and trb Example Measurement
- 18. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 18 V_V1 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V I(R1) 0A 1mA 2mA 3mA 4mA 5mA 6mA 7mA 8mA 9mA 10mA ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result Evaluation Circuit R1 0.001m V1 0Vdc 0 R2 100MEG U1 2SK3497
- 19. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009 19 Zener Voltage Characteristic Reference