SPICE MODEL of TPC8115 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
SPICE MODEL of TPC8115 (Professional+BDP Model) in SPICE PARK
1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: TPC8115
MANUFACTURER: TOSHIBA
Body Diode (Professional Model) / ESD Protection Diode
2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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0
20
40
60
80
0 2 4 6 8 10
gfs(S)
Drain Current ID (-A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
-Id(A)
gfs(S)
Error (%)
Measurement Simulation
1 16.750 17.179 2.56
2 23.500 24.122 2.65
5 38.500 37.613 -2.30
10 54.000 52.373 -3.01
4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
4
V1
0Vdc
V2
-10
0
V3
0Vdc
U1
TPC8115
V_V1
0V -1.0V -2.0V -3.0V -4.0V
I(V3)
0A
-4A
-8A
-12A
-16A
-20A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
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Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(A)
-VGS(V)
Error (%)
Measurement Simulation
1 1.355 1.364 0.66
2 1.425 1.413 -0.84
5 1.525 1.510 -0.98
10 1.630 1.621 -0.55
20 1.795 1.781 -0.78
14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
14
Reverse Recovery Characteristic Reference
Trj= 28 (ns)
Trb= 208 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement
15. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
15
R1
0.001m
V1
0Vdc
0
U1
TPC8115
R2
100MEG
V_V1
0V -5V -10V -15V -20V -25V -30V -35V -40V -45V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit
16. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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Zener Voltage Characteristic Reference