This document provides a summary report of the device modeling for a power MOSFET and its components. It includes SPICE models and simulation results for the MOSFET's electrical characteristics like transconductance, drain current, gate charge, switching time and body diode characteristics. The simulations show good agreement with measurement data within less than 5% error. Circuit schematics and simulation results are provided to validate the models.

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1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: SSM6J212FE
MANUFACTURER: TOSHIBA
Body Diode (Professional Model) / ESD Protection Diode

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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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3
0
3
6
9
12
15
0.0 1.0 2.0 3.0 4.0
Gfs(S)
Drain Current ID (-A)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation Result
Comparison table
-Id(A)
gfs(S)
Error (%)
Measurement Simulation
0.1 2.700 2.758 2.15
0.2 3.750 3.856 2.83
0.5 6.150 5.961 -3.07
1 8.500 8.224 -3.25
2 11.650 11.241 -3.51
4 15.800 15.178 -3.94

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V1
0Vdc
V2
-3
0
V3
0Vdc
U1
SSM6J212FE
V_V1
0V -1.0V -2.0V -3.0V
I(V3)
-100mA
-10A
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

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0.1
1.0
10.0
0.0 1.0 2.0 3.0
DrainCurrentID(-A)
Gate - Source Voltage VGS (-V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(A)
-VGS(V)
Error (%)
Measurement Simulation
0.1 0.824 0.847 2.79
0.2 0.855 0.878 2.67
0.5 0.916 0.939 2.51
1 0.978 1.008 3.07
2 1.075 1.111 3.39
5 1.275 1.325 3.92
8 1.420 1.487 4.72

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0
V3
0Vdc
VDS
0Vdc
VGS
-4.5
U1
SSM6J212FE
V_VDS
0V -20mV -40mV -60mV -80mV -100mV
I(V3)
0A
-1.0A
-2.0A
-3.0A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -3A, VGS= -4.5V Measurement Simulation Error (%)
RDS (on) mΩ 35.300 35.299 0.00

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Time*1mA
0 5n 10n 15n 20n 25n 30n
V(W1:4)
0V
-2.0V
-4.0V
-6.0V
-8.0V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD= -10V,ID=-4A
,VGS= -4.5V
Measurement Simulation Error (%)
Qgs nC 1.700 1.711 0.65
Qgd nC 2.400 2.410 0.42
Qg nC 14.100 14.094 -0.04
VDD
-10
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n -
+
W1
ION = 0uA
IOFF = 1mA
W
I2
4
0
D2
Dbreak
U1
SSM6J212FE

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Capacitance Characteristics
Simulation Result
-VDS(V)
Cbd(pF)
Error (%)
Measurement Simulation
0.1 78.000 77.600 -0.51
0.2 75.000 74.800 -0.27
0.5 68.000 68.000 0.00
1.0 60.000 60.000 0.00
2.0 50.000 50.000 0.00
5.0 36.000 36.300 0.83
10.0 27.500 27.300 -0.73
20.0 20.000 20.000 0.00
Simulation
Measurement

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Time
0.8us 0.9us 1.0us 1.1us 1.2us 1.3us
V(N1)*4 V(N2)
0V
-5V
-10V
-15V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID= -2A, VDD= -10V
VGS=0/-2.5V
Measurement Simulation Error (%)
ton ns 47.000 46.972 -0.06
0
VDD
-10Vdc
V2
TD = 1u
TF = 5n
PW = 2u
PER = 200u
V1 = 0
TR = 5n
V2 = 5
U1
SSM6J212FE
L2
30nH
N2
R2
4.7
R1
4.7
L1
30nH
N1
RL
5

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10
0
V2
-3V1
0Vdc
V3
0Vdc
U1
SSM6J212FE
V_V2
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(V3)
0A
-2.0A
-4.0A
-6.0A
-8.0A
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS= -1.5
-2.5 -1.8
-4.5

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VSD
0
Vsense
0Vdc
U1
SSM6J212FE
V_VSD
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
1.0mA
10mA
100mA
1.0A
10A
BODY DIODE SPICE MODEL
Forward Current Characteristics
Circuit Simulation Result
Evaluation Circuit

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0.001
0.010
0.100
1.000
10.000
0 0.2 0.4 0.6 0.8 1 1.2
DrainreversecurrentIDR(A)
Drain - Source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VDS (V)
%Error
Measurement Simulation
0.001 0.455 0.450 -1.10
0.002 0.476 0.476 0.00
0.005 0.507 0.509 0.39
0.01 0.532 0.535 0.56
0.02 0.557 0.561 0.72
0.05 0.594 0.596 0.34
0.1 0.627 0.625 -0.32
0.2 0.663 0.656 -1.06
0.5 0.712 0.706 -0.84
1 0.753 0.752 -0.13
2 0.800 0.806 0.75
5 0.890 0.886 -0.45
8 0.955 0.935 -2.09

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V1
TD = 522ns
TF = 15ns
PW = 10us
PER = 100us
V1 = -9.5v
TR = 10ns
V2 = 10.6v
R1
50
0
U1
DSSM6J212FE_P
Time
10.1us 10.3us 10.5us 10.7us 10.9us 11.1us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 14.000 14.268 1.91
trb ns 42.000 41.954 -0.11
trr ns 56.000 56.222 0.40

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Reverse Recovery Characteristics Reference
Trj= 14 (ns)
Trb= 42 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

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R1
0.001m
V1
0Vdc
0
U1
SSM6J212FE
R3
100MEG
R2
100MEG
V_V1
0V -10V -20V -30V -40V -50V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristics
Circuit Simulation Result
Evaluation Circuit

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Zener Voltage Characteristics Reference