SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of SSM6J409TU (Professional+BDP Model) in SPICE PARK

  1. 1. All Rights Reserved Copyright (c) Bee Technologies Inc. 20091Device Modeling ReportBee Technologies Inc.COMPONENTS: MOSFET (Professional Model)PART NUMBER: SSM6J409TUMANUFACTURER: TOSHIBAREMARK: Body Diode (Professional Model) /ESD Protection Diode
  2. 2. All Rights Reserved Copyright (c) Bee Technologies Inc. 20092MOSFET MODELPSpice modelparameterModel descriptionLEVELL Channel LengthW Channel WidthKP TransconductanceRS Source Ohmic ResistanceRD Ohmic Drain ResistanceVTO Zero-bias Threshold VoltageRDS Drain-Source Shunt ResistanceTOX Gate Oxide ThicknessCGSO Zero-bias Gate-Source CapacitanceCGDO Zero-bias Gate-Drain CapacitanceCBD Zero-bias Bulk-Drain Junction CapacitanceMJ Bulk Junction Grading CoefficientPB Bulk Junction PotentialFC Bulk Junction Forward-bias Capacitance CoefficientRG Gate Ohmic ResistanceIS Bulk Junction Saturation CurrentN Bulk Junction Emission CoefficientRB Bulk Series ResistancePHI Surface Inversion PotentialGAMMA Body-effect ParameterDELTA Width effect on Threshold VoltageETA Static Feedback on Threshold VoltageTHETA Mobility ModulationKAPPA Saturation Field FactorVMAX Maximum Drift Velocity of CarriersXJ Metallurgical Junction DepthUO Surface Mobility
  3. 3. All Rights Reserved Copyright (c) Bee Technologies Inc. 20093010203040500.0 5.0 10.0 15.0 20.0gfs(S)Drain Current ID (-A)MeasurementSimulationTransconductance CharacteristicCircuit Simulation ResultComparison table- Id(A)gfs(S)Error (%)Measurement Simulation0.2 6.400 6.118 -4.410.5 9.700 9.321 -3.911 13.000 12.663 -2.592 16.800 16.963 0.975 24.000 24.281 1.1710 30.500 31.025 1.7220 37.500 38.614 2.97
  4. 4. All Rights Reserved Copyright (c) Bee Technologies Inc. 20094V_VGS0V -0.5V -1.0V -1.5V -2.0VI(VD_Sense)0A-2A-4A-6A-8A-10A-12A-14A-16A-18A-20AVgs-Id CharacteristicCircuit Simulation resultEvaluation circuitVDS-3VdcVD_Sense0VdcVGS0U1SSM6J409TU
  5. 5. All Rights Reserved Copyright (c) Bee Technologies Inc. 200950.002.004.006.008.0010.0012.0014.0016.0018.0020.000.0 0.5 1.0 1.5 2.0DrainCurrentID(-A)Gate - Source Voltage VGS (-V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation Result-ID(A)-VGS(V)Error (%)Measurement Simulation0.2 0.840 0.880 4.800.5 0.890 0.919 3.261 0.950 0.964 1.512 1.040 1.032 -0.815 1.200 1.176 -2.0210 1.370 1.356 -1.0620 1.650 1.641 -0.56
  6. 6. All Rights Reserved Copyright (c) Bee Technologies Inc. 20096U1SSM6J409TUVGS-4.5VdcVD_Sense0VdcVDS-0Vdc0V_VDS0V -20mV -40mV -60mVI(VD_Sense)0A-1.0A-2.0A-3.0ARds(on) CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID = -3A, VGS = -4.5V Measurement Simulation Error (%)RDS (on) m 17.800 17.800 0.00
  7. 7. All Rights Reserved Copyright (c) Bee Technologies Inc. 20097Time*-1mA0 -5n -10n -15n -20n -25n -30nV(W1:4)0V-1.0V-2.0V-3.0V-4.0V-5.0V-6.0V-7.0V-8.0VGate Charge CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultVDD=-10V, ID=-9.5A,VGS=-4.5VMeasurement Simulation Error (%)Qgs nC 2.000 2.016 0.80Qgd nC 4.250 4.259 0.22Qg nC 15.000 14.988 -0.08I1TD = 0TF = 10nPW = 600uPER = 1000uI1 = 0I2 = 1mTR = 10n-+W1ION = 0uAIOFF = 0.1mAW0I29.5AdcD1DbreakV1-10VdsV20VdcU1SSM6J409TU
  8. 8. All Rights Reserved Copyright (c) Bee Technologies Inc. 20098Capacitance CharacteristicSimulation ResultVSD (V)Cbd (pF)Error (%)Measurement Simulation0.1 340.000 347.750 2.280.2 305.000 319.950 4.900.5 255.000 263.200 3.221 210.000 210.500 0.242 160.000 158.400 -1.005 100.000 101.760 1.7610 70.000 70.690 0.9920 50.000 48.450 -3.10SimulationMeasurement
  9. 9. All Rights Reserved Copyright (c) Bee Technologies Inc. 20099Time1.84us 1.92us 2.00us 2.08us 2.16us 2.24usV(L1:2) V(L2:2)/40V-0.5V-1.0V-1.5V-2.0V-2.5V-3.0V-3.5V-4.0VSwitching Time CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID=-2.0A, VDD=-10VVGS=0/-2.5VMeasurement Simulation Error(%)ton ns 40.000 39.998 -0.01V2TD = 2uTF = 1nPW = 10uPER = 2000uV1 = 0TR = 1nV2 = 5V1-10VdcL250nHL130nHR25R14.7U1SSM6J409TU0RG4.7
  10. 10. All Rights Reserved Copyright (c) Bee Technologies Inc. 200910V_VDS0V -0.2V -0.4V -0.6V -0.8V -1.0VI(VD_Sense)0A-4A-8A-12A-16A-20AOutput CharacteristicCircuit Simulation resultEvaluation circuitU1SSM6J409TUVGSVD_Sense0VdcVDS-1Vdc0VGS=-4.5V-1.5-1.8-2.5
  11. 11. All Rights Reserved Copyright (c) Bee Technologies Inc. 200911V_V10V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2VI(R1)1.0mA10mA100mA1.0A10A100AForward Current CharacteristicCircuit Simulation ResultEvaluation CircuitV10VdcR10.01m0U1SSM6J409TU
  12. 12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009120.00.00.11.010.00 0.2 0.4 0.6 0.8 1 1.2DrainreversecurrentIDR(A)Source - Drain voltage VDS (V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation ResultIDR(A)VDS(V)%ErrorMeasurement Simulation0.001 0.345 0.345 0.000.01 0.420 0.421 0.270.1 0.500 0.501 0.290.2 0.525 0.529 0.840.5 0.570 0.574 0.651 0.615 0.615 0.032 0.660 0.663 0.505 0.740 0.738 -0.3010 0.815 0.808 -0.8320 0.900 0.904 0.42
  13. 13. All Rights Reserved Copyright (c) Bee Technologies Inc. 200913Time0.2us 0.6us 1.0us 1.4us 1.8us 2.2usI(R1)-400mA-300mA-200mA-100mA-0mA100mA200mA300mA400mA0V1TD = 18nTF = 5.7nsPW = 1usPER = 50usV1 = -9.5VTR = 10nsV2 = 10.5VR150 U1DSSM64J409TU_PReverse Recovery CharacteristicsCircuit Simulation ResultEvaluation CircuitCompare Measurement vs. SimulationCharacteristics Unit Measurement Simulation Error (%)trj ns 24.000 23.544 -1.90trb ns 132.000 131.746 -0.19trr ns 156.000 155.290 -0.46
  14. 14. All Rights Reserved Copyright (c) Bee Technologies Inc. 200914Reverse Recovery Characteristic ReferenceTrj=24.00(ns)Trb=132.00(ns)Conditions:Ifwd=lrev=0.2(A),Rl=50Relation between trj and trbExampleMeasurement
  15. 15. All Rights Reserved Copyright (c) Bee Technologies Inc. 200915V_V10V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50VI(R1)0A1mA2mA3mA4mA5mA6mA7mA8mA9mA10mAESD PROTECTION DIODE SPICE MODELZener Voltage CharacteristicCircuit Simulation ResultEvaluation CircuitopenRopen100MEG0openopenopenopenR10.01mV10Vdc0U1SSM6J409TU
  16. 16. All Rights Reserved Copyright (c) Bee Technologies Inc. 200916Zener Voltage Characteristic Reference

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