The document is a device modeling report for the MOSFET model parameters of part number TK12A60U by Toshiba, including detailed specifications and characteristics. It provides circuit simulation results, including comparisons of measured and simulated data, with specific focus on transconductance, gate-source voltage, output characteristics, and reverse recovery features. The report concludes with error analysis of simulation versus measurement for various attributes of the MOSFET.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TK12A60U
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
3
0
2
4
6
8
10
0 2 4 6 8 10
gfs(S)
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
Id(A)
gfs (s)
Error (%)
Measurement Simulation
1.0 2.750 2.832 2.982
2.0 3.900 3.958 1.487
5.0 6.050 6.118 1.124
10.0 8.400 8.439 0.464

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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V1
0Vdc
V2
20
0
V3
0Vdc
U1
TK12A60U
V_V1
0V 2V 4V 6V 8V 10V
I(V3)
0A
4A
8A
12A
16A
20A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
5
0
4
8
12
16
20
0 2 4 6 8 10
DrainCurrentID(A)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
Error (%)
Measurement Simulation
1 5.350 5.416 1.23
2 5.655 5.710 0.97
4 6.070 6.132 1.02
6 6.400 6.460 0.94
8 6.675 6.740 0.97
10 6.915 6.989 1.07
12 7.140 7.216 1.06
16 7.550 7.624 0.98
20 7.920 7.988 0.86

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
6
0
V3
0Vdc
VDS
0Vdc
V1
10
U1
TK12A60U
V_VDS
0V 1.0V 2.0V
I(V3)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
6.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 6A, VGS = 10V Measurement Simulation Error (%)
RDS (on)  0.360 0.361 0.31

7. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
VDD
400
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
12
0
D2
Dbreak
U1
TK12A60U
Time*1mA
0 4n 8n 12n 16n 20n
V(W1:3)
0V
4V
8V
12V
16V
20V
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=400V, ID=12A,
VGS=10V
Measurement Simulation Error (%)
Qgs nC 4.900 4.904 0.08
Qgd nC 5.500 5.495 -0.09
Qg nC 14.000 12.506 -10.67

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Capacitance Characteristic
Simulation Result
VDS (V)
Cbd (pF)
Error (%)
Measurement Simulation
40 198.400 200.000 0.81
60 71.400 70.000 -1.96
80 36.400 36.000 -1.10
100 21.400 21.000 -1.87
Simulation
Measurement

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Time
0.7us 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us 1.4us 1.5us
1 V(U1:G) 2 V(U1:D)
0V
2V
4V
6V
8V
10V
12V
1
>>
0V
200V
360V
2
0
VDD
303VdcV2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
U1
TK12A60U
L2
50nH
R2
50
R1
50
L1
30nH
RL
50
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=6A, VDD300V
VGS=0/10V
Measurement Simulation Error (%)
ton ns 60.000 60.028 0.05

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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V2
50
V1
0
0
V3
0Vdc
U1
TK12A60U
V_V2
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
2A
4A
6A
8A
10A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=5.5V
7.5
6
10 8
7
6.5

11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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U1
TK12A60U
VDS
0
Vsense
0Vdc
V_VDS
0V 0.3V 0.6V 0.9V 1.2V
I(Vsense)
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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0.1
1.0
10.0
100.0
0 0.3 0.6 0.9 1.2
DrainreversecurrentIDR(A)
Source - Drain voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VDS(V)
%Error
Measurement Simulation
0.1 0.670 0.669 -0.15
0.2 0.690 0.689 -0.17
0.5 0.718 0.718 0.04
1.0 0.746 0.747 0.13
2.0 0.785 0.787 0.25
5.0 0.870 0.867 -0.34
10.0 0.965 0.965 0.04
20.0 1.130 1.130 0.03

13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
13
V1
TD = 0.5us
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.45v
TR = 10ns
V2 = 10.65v
0
R1
50
U1
TK12A60U
Time
12us 14us 16us 18us 20us 22us 24us 26us 28us 30us
I(R1)
-400mA
-200mA
0A
200mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 720.000 713.130 -0.95

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Reverse Recovery Characteristic Reference
Trj= 720 (ns)
Trb= 880 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement