All Rights Reserved Copyright (c) Bee Technologies Inc. 20091Device Modeling ReportBee Technologies Inc.COMPONENTS: MOSFET...
All Rights Reserved Copyright (c) Bee Technologies Inc. 20092MOSFET MODELPSpice modelparameterModel descriptionLEVELL Chan...
All Rights Reserved Copyright (c) Bee Technologies Inc. 20093024680 2 4 6 8 10gfs(S)Drain Current ID (A)MeasurementSimulat...
All Rights Reserved Copyright (c) Bee Technologies Inc. 20094V10VdcV2200V30VdcU1TK8A50DV_V10V 2V 4V 6V 8V 10V 12VI(V3)0A2A...
All Rights Reserved Copyright (c) Bee Technologies Inc. 20095048120 2 4 6 8 10 12DrainCurrentID(A)Gate - Source Voltage VG...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200960V30VdcVDS0VdcV110U1TK8A50DV_VDS0V 1.0V 2.0V 2.8VI(V3)0A1.0A2...
All Rights Reserved Copyright (c) Bee Technologies Inc. 20097VDD400I1TD = 0TF = 5nPW = 600uPER = 1000uI1 = 0I2 = 1mTR = 5n...
All Rights Reserved Copyright (c) Bee Technologies Inc. 20098Capacitance CharacteristicSimulation ResultVDS (V)Cbd (pF)Err...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200990VDD203VdcV2TD = 1uTF = 5nPW = 10uPER = 20uV1 = 0TR = 5nV2 = ...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200910V250V100V30VdcU1TK8A50DV_V20V 2V 4V 6V 8V 10VI(V3)0A2A4A6A8A...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200911U1TK8A50DVDS0Vsense0VdcV_VDS0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V...
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009120.11.010.00 0.2 0.4 0.6 0.8 1 1.2DrainreversecurrentIDR(A)So...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200913V1TD = 1.8usTF = 10nsPW = 10usPER = 100usV1 = -9.45vTR = 10n...
All Rights Reserved Copyright (c) Bee Technologies Inc. 200914Reverse Recovery Characteristic ReferenceTrj= 0.5 (us)Trb= 1...
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SPICE MODEL of TK8A50D (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of TK8A50D (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of TK8A50D (Professional+BDP Model) in SPICE PARK

  1. 1. All Rights Reserved Copyright (c) Bee Technologies Inc. 20091Device Modeling ReportBee Technologies Inc.COMPONENTS: MOSFET (Professional Model)PART NUMBER: TK8A50DMANUFACTURER: TOSHIBAREMARK: Body Diode (Professional Model)
  2. 2. All Rights Reserved Copyright (c) Bee Technologies Inc. 20092MOSFET MODELPSpice modelparameterModel descriptionLEVELL Channel LengthW Channel WidthKP TransconductanceRS Source Ohmic ResistanceRD Ohmic Drain ResistanceVTO Zero-bias Threshold VoltageRDS Drain-Source Shunt ResistanceTOX Gate Oxide ThicknessCGSO Zero-bias Gate-Source CapacitanceCGDO Zero-bias Gate-Drain CapacitanceCBD Zero-bias Bulk-Drain Junction CapacitanceMJ Bulk Junction Grading CoefficientPB Bulk Junction PotentialFC Bulk Junction Forward-bias Capacitance CoefficientRG Gate Ohmic ResistanceIS Bulk Junction Saturation CurrentN Bulk Junction Emission CoefficientRB Bulk Series ResistancePHI Surface Inversion PotentialGAMMA Body-effect ParameterDELTA Width effect on Threshold VoltageETA Static Feedback on Threshold VoltageTHETA Mobility ModulationKAPPA Saturation Field FactorVMAX Maximum Drift Velocity of CarriersXJ Metallurgical Junction DepthUO Surface Mobility
  3. 3. All Rights Reserved Copyright (c) Bee Technologies Inc. 20093024680 2 4 6 8 10gfs(S)Drain Current ID (A)MeasurementSimulationTransconductance CharacteristicCircuit Simulation ResultComparison tableId(A)gfs (s)Error (%)Measurement Simulation1.0 1.850 1.923 3.9462.0 2.640 2.698 2.1975.0 4.170 4.200 0.72410.0 5.825 5.838 0.223
  4. 4. All Rights Reserved Copyright (c) Bee Technologies Inc. 20094V10VdcV2200V30VdcU1TK8A50DV_V10V 2V 4V 6V 8V 10V 12VI(V3)0A2A4A6A8A10A12A14AVgs-Id CharacteristicCircuit Simulation resultEvaluation circuit
  5. 5. All Rights Reserved Copyright (c) Bee Technologies Inc. 20095048120 2 4 6 8 10 12DrainCurrentID(A)Gate - Source Voltage VGS (V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation ResultID(A)VGS(V)Error (%)Measurement Simulation1 6.000 6.021 0.352 6.450 6.453 0.054 7.100 7.071 -0.416 7.587 7.549 -0.508 7.970 7.956 -0.1810 8.335 8.316 -0.2312 8.625 8.644 0.2214 8.925 8.947 0.25
  6. 6. All Rights Reserved Copyright (c) Bee Technologies Inc. 200960V30VdcVDS0VdcV110U1TK8A50DV_VDS0V 1.0V 2.0V 2.8VI(V3)0A1.0A2.0A3.0A4.0ARds(on) CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID = 4A, VGS = 10V Measurement Simulation Error (%)RDS (on)  0.700 0.7002 0.03
  7. 7. All Rights Reserved Copyright (c) Bee Technologies Inc. 20097VDD400I1TD = 0TF = 5nPW = 600uPER = 1000uI1 = 0I2 = 1mTR = 5n -+W1ION = 0uAIOFF = 1mAWI280D2DbreakU1TK8A50DTime*1mA0 5n 10n 15n 20n 25n 30nV(W1:3)0V4V8V12V16V20VGate Charge CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultVDD=400V, ID=8A,VGS=10VMeasurement Simulation Error (%)Qgs nC 6.500 6.513 0.20Qgd nC 6.000 6.076 1.27Qg nC 16.000 15.980 -0.12
  8. 8. All Rights Reserved Copyright (c) Bee Technologies Inc. 20098Capacitance CharacteristicSimulation ResultVDS (V)Cbd (pF)Error (%)Measurement Simulation20 95.600 95.500 -0.1040 63.800 63.900 0.1660 50.200 50.050 -0.3080 42.400 42.200 -0.47100 37.000 37.200 0.54SimulationMeasurement
  9. 9. All Rights Reserved Copyright (c) Bee Technologies Inc. 200990VDD203VdcV2TD = 1uTF = 5nPW = 10uPER = 20uV1 = 0TR = 5nV2 = 20U1TK8A50DL250nHR250R150L130nHRL50Time0.9us 1.0us 1.1us 1.2us1 V(U1:G) 2 V(U1:D)0V2V4V6V8V10V12V10V40V80V120V160V200V240V2>>Switching Time CharacteristicCircuit Simulation resultEvaluation circuitSimulation ResultID=4A, VDD=200VVGS=0/10VMeasurement Simulation Error(%)ton ns 40.000 39.999 0.00
  10. 10. All Rights Reserved Copyright (c) Bee Technologies Inc. 200910V250V100V30VdcU1TK8A50DV_V20V 2V 4V 6V 8V 10VI(V3)0A2A4A6A8A10AOutput CharacteristicCircuit Simulation resultEvaluation circuitVGS=6V7.56.57.751087.257
  11. 11. All Rights Reserved Copyright (c) Bee Technologies Inc. 200911U1TK8A50DVDS0Vsense0VdcV_VDS0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2VI(Vsense)100mA1.0A10AForward Current CharacteristicCircuit Simulation ResultEvaluation Circuit
  12. 12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2009120.11.010.00 0.2 0.4 0.6 0.8 1 1.2DrainreversecurrentIDR(A)Source - Drain voltage VSD (V)MeasurementSimulationComparison GraphCircuit Simulation ResultSimulation ResultIDR(A)VSD(V)%ErrorMeasurement Simulation0.1 0.645 0.644 -0.160.2 0.677 0.676 -0.150.5 0.725 0.725 0.061.0 0.770 0.773 0.392.0 0.835 0.836 0.105.0 0.957 0.953 -0.4410.0 1.085 1.086 0.09
  13. 13. All Rights Reserved Copyright (c) Bee Technologies Inc. 200913V1TD = 1.8usTF = 10nsPW = 10usPER = 100usV1 = -9.45vTR = 10nsV2 = 10.65v0R150U1DTK8A50D_PTime4us 6us 8us 10us 12us 14us 16us 18us 20us 22usI(R1)-400mA-300mA-200mA-100mA-0mA100mA200mA300mA400mAReverse Recovery CharacteristicsCircuit Simulation ResultEvaluation CircuitCompare Measurement vs. SimulationMeasurement Simulation Error (%)trj us 0.500 0.495 -1.00trb us 1.520 1.531 0.72trr us 2.020 2.026 0.30
  14. 14. All Rights Reserved Copyright (c) Bee Technologies Inc. 200914Reverse Recovery Characteristic ReferenceTrj= 0.5 (us)Trb= 1.52 (us)Conditions:Ifwd=lrev=0.2(A),Rl=50Relation between trj and trbExampleMeasurement

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