This document provides a summary of simulation results for the modeling and characterization of a MOSFET transistor and its internal body diode. It includes simulation data tables and graphs comparing measurement results to circuit simulations for various transistor parameters and operating conditions, such as transconductance, drain current, gate charge, switching time, output characteristics, and reverse recovery characteristics. The document also provides a SPICE model for the internal protection diode and its zener voltage characteristics.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TPCA8022-H
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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1
21
41
61
81
0 10 20 30 40
Gfs(S)
Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristics
Circuit Simulation Result
Comparison table
Id(A)
gfs (s)
%Error
Measurement Simulation
2 15.150 15.869 4.75
5 24.500 24.851 1.43
10 35.500 34.770 -2.06
20 50.000 48.442 -3.12
50 77.000 74.401 -3.38

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
4
V1
0Vdc
V2
10
0
V3
0Vdc
U1
TPCA8022-H
V_V1
0V 2V 4V 6V 8V 10V
I(V3)
0A
10A
20A
30A
40A
Vgs-Id Characteristics
Circuit Simulation result
Evaluation circuit

5. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
5
0
10
20
30
40
0.0 2.0 4.0 6.0 8.0 10.0
DrainCurrentID(A)
Gate - Source Voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
ID(A)
VGS(V)
%Error
Measurement Simulation
1 4.000 4.055 1.36
2 4.100 4.128 0.69
5 4.250 4.275 0.60
10 4.400 4.443 0.98
20 4.650 4.683 0.71
40 4.975 5.029 1.08

6. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
6
0
V3
0Vdc
VDS
0Vdc
V1
10
U1
TPCA8022-H
V_VDS
0V 47.5mV 95.0mV 142.5mV 190.0mV
I(V3)
0A
1A
2A
3A
4A
5A
6A
7A
8A
9A
10A
11A
Rds(on) Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = 11A, VGS = 10V Measurement Simulation %Error
RDS (on) m 17.000 17.000 0.00

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I1
TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
U1
TPCA8022-H
VDD
80
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
22
0
D2
Dbreak
Time*1mA
0 10n 20n 30n 40n
V(W1:2)
0V
4V
8V
12V
16V
20V
Gate Charge Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=80V, ID=22A,
VGS=10V
Measurement Simulation %Error
Qgs nC 9.800 9.792 -0.08
Qgd nC 10.000 10.035 0.35
Qg nC 38.000 31.838 -16.22

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Capacitance Characteristics
Simulation Result
VDS (V)
Cbd (pF)
%Error
Measurement Simulation
0.1 1150.000 1170.000 1.74
0.2 1060.000 1080.000 1.89
0.5 860.000 870.000 1.16
1 730.000 735.000 0.68
2 595.000 584.000 -1.85
5 400.000 395.000 -1.25
10 295.000 292.000 -1.02
20 212.500 215.500 1.41
50 135.500 139.000 2.58
100 97.000 100.000 3.09
Simulation
Measurement

9. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
9
0
VDD
50
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
U1
TPCA8022-H
L2
50nH
R2
4.7
R1
4.7
L1
30nH
RL
4.5
Time
0.90us 0.94us 0.98us 1.02us 1.06us 1.10us
V(U1:4) V(U1:5)/5
0V
10V
14V
Switching Time Characteristics
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=11A, VDD=50V
VGS=10/0V
Measurement Simulation %Error
ton ns 14.000 14.074 0.53

10. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
10
0
V1
0
V2
10
V3
0Vdc
U1
TPCA8022-H
V_V2
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
4A
8A
12A
16A
20A
Output Characteristics
Circuit Simulation result
Evaluation circuit
VGS=4.2V
4.5
10
6
4.4
4.6
4.7
4.8
5
8

11. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
11
VDS
0
U1
TPCA8022-H
Vsense
V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(Vsense)
100mA
1.0A
10A
100A
Forward Current Characteristics
Circuit Simulation Result
Evaluation Circuit

12. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
12
0.100
1.000
10.000
100.000
0 0.2 0.4 0.6 0.8 1
DrainreversecurrentIDR(A)
Drain - Source voltage -VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
-VDS(V)
%Error
Measurement Simulation
0.1 0.620 0.620 -0.08
0.2 0.639 0.639 0.06
0.5 0.665 0.666 0.13
1 0.688 0.686 -0.18
2 0.706 0.707 0.20
5 0.738 0.738 -0.04
10 0.765 0.764 -0.08
20 0.797 0.797 0.04
60 0.870 0.870 -0.01

13. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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V1
TD = 60ns
TF = 20ns
PW = 1us
PER = 100us
V1 = -9.44v
TR = 10ns
V2 = 10.65v
R1
50
0
U1
TPCA8022-H
Time
0.2us 0.4us 0.8us 1.2us 1.4us 1.8us 2.2us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trj ns 36.000 35.821 -0.50

14. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
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Reverse Recovery Characteristics Reference
Trj= 36 (ns)
Trb= 72 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

15. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
15
V1
0Vdc
R1
0.001m
0
U1
TPCA8022-H
R2
100MEG
V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
0A
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristics
Circuit Simulation Result
Evaluation Circuit

16. All Rights Reserved Copyright (c) Bee Technologies Inc. 2010
16
Zener Voltage Characteristics Reference