All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: MO...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3
10
100
1000
0 50 100 150 200
gfs(S)
Drain current ID (A)
Me...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4
V_VGS
0V 2.0V 4.0V 6.0V 8.0V
-I(VDS)
0A
50A
100A
150A
200A
...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5
0
40
80
120
160
200
0.0 2.0 4.0 6.0 8.0
DraincurrentID(A)
G...
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6
VGS
10V
0
VDS
U1
TK80K04K3Z
V_VDS
0V 20mV 40mV 60mV
-I(VDS)...
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7
V_VDS
0V 1.0V 2.0V 3.0V 4.0V 5.0V
-I(VDS)
0A
40A
80A
120A
1...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8
Capacitance Characteristics
Simulation result
Comparison ta...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9
Time*1m
0s 80ns 160ns 240ns 320ns
V(W1:3)
0V
2V
4V
6V
8V
10...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
10
Time
1.68us 1.84us 2.00us 2.16us 2.32us 2.48us
V(G) V(D)/2...
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11
V_VDS
0V -0.4V -0.8V -1.2V
I(VDS)
1.0A
10A
100A
1.0KA
VDS
...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
12
1
10
100
1000
0.0 0.4 0.8 1.2
DrianreversecurrentIDR(A)
Dr...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
13
Time
8.8us 9.6us 10.4us 11.2us 12.0us 12.8us
I(R1)
-400mA
...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
14
Reverse Recovery Characteristics Reference
Trj = 24(ns)
Tr...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
15
V_VGS
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
-I(VGS)
0A...
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
16
Zener Voltage Characteristics Reference
IZ = 1(mA)
VZ = 24...
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SPICE MODEL of TK80K04K3Z (Professional+BDP Model) in SPICE PARK

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SPICE MODEL of TK80K04K3Z (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of TK80K04K3Z (Professional+BDP Model) in SPICE PARK

  1. 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: MOSFET (Professional Model) PART NUMBER: TK80K04K3Z MANUFACTURER: TOSHIBA REMARK: Body Diode (Professional Model)
  2. 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 2 MOSFET MODEL PSpice model parameter Model description LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility
  3. 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 3 10 100 1000 0 50 100 150 200 gfs(S) Drain current ID (A) Measurement Simulation Transconductance Characteristics Circuit Simulation result Comparison table ID (A) gfs (S) %Error Measurement Simulation 10 83.000 86.465 4.17 20 118.000 122.169 3.53 50 191.000 192.904 1.00 100 273.000 272.460 -0.20 200 384.000 384.485 0.13 VDS=10V
  4. 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 4 V_VGS 0V 2.0V 4.0V 6.0V 8.0V -I(VDS) 0A 50A 100A 150A 200A VGS 0 VDS 10V U1 TK80K04K3Z Vgs-Id Characteristics Circuit Simulation result Evaluation circuit
  5. 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 5 0 40 80 120 160 200 0.0 2.0 4.0 6.0 8.0 DraincurrentID(A) Gate-source voltage VGS (V) Measurement Simulation Comparison Graph Circuit Simulation result Comparison table ID (A) VGS (V) %Error Measurement Simulation 5 4.520 4.623 2.28 10 4.620 4.691 1.54 20 4.730 4.786 1.18 50 4.900 4.977 1.57 100 5.080 5.192 2.20 200 5.390 5.496 1.97 VDS=10V
  6. 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 6 VGS 10V 0 VDS U1 TK80K04K3Z V_VDS 0V 20mV 40mV 60mV -I(VDS) 0A 10A 20A 30A 40A Rds(on) Characteristics Circuit Simulation result Evaluation circuit Test condition: VGS=10(V), ID=40(A) Parameter Unit Measurement Simulation %Error RDS(on) mΩ 1.400 1.400 0.00
  7. 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 7 V_VDS 0V 1.0V 2.0V 3.0V 4.0V 5.0V -I(VDS) 0A 40A 80A 120A 160A 200A VGS 0 VDS U1 TK80K04K3Z Output Characteristics Circuit Simulation result Evaluation circuit VGS=5V 5.2V 5.5V 5.6V5.8V 10V 5.3V 5.4V 5.7V 6V 8V 6.5V
  8. 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 8 Capacitance Characteristics Simulation result Comparison table VDS (V) Cbd (pF) %Error Measurement Simulation 0.1 3570 3588 0.50 0.2 3350 3360 0.30 0.5 2900 2901 0.03 1 2450 2450 0.00 2 1890 1903 0.69 5 1300 1308 0.62 10 980 976 -0.41 20 670 676 0.90 Simulation Measurement
  9. 9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 9 Time*1m 0s 80ns 160ns 240ns 320ns V(W1:3) 0V 2V 4V 6V 8V 10V 12V 14V 0 D1 DMod U1 TK80K04K3Z - + W1 ION = 0 IOFF = 1mA W IGTD = 0 TF = 10n PW = 10m PER = 1 I1 = 0 I2 = 1m TR = 10n ID 80A VDD 32V Gate Charge Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=32(V), VGS=10(V), ID=80(A) Parameter Unit Measurement Simulation %Error Qgs nc 50.000 50.149 0.30 Qgd nc 95.000 94.925 -0.08 Qg nc 210.000 209.947 -0.03
  10. 10. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 10 Time 1.68us 1.84us 2.00us 2.16us 2.32us 2.48us V(G) V(D)/2 0V 5V 10V 15V V1TD = 2u TF = 1n PW = 10u PER = 1000u V1 = 0 TR = 1n V2 = 20V VDD 20V 0 RL 0.5 D L2 50nH 12 U1 TK80K04K3Z L1 30nH 1 2 R2 4.7 G R1 4.7 Switching Time Characteristics Circuit Simulation result Evaluation circuit Test condition: VDD=20(V), VGS=0/10(V), ID=40(A) Parameter Unit Measurement Simulation %Error ton ns 90.000 89.914 -0.10
  11. 11. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 11 V_VDS 0V -0.4V -0.8V -1.2V I(VDS) 1.0A 10A 100A 1.0KA VDS 0 U1 TK80K04K3Z Body Diode Forward Current Characteristics Circuit Simulation result Evaluation circuit
  12. 12. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 12 1 10 100 1000 0.0 0.4 0.8 1.2 DrianreversecurrentIDR(A) Drain - source voltage -VDS (V) Measurement Simulation Comparison Graph Simulation result Comparison table IDR (A) -VDS (V) %Error Measurement Simulation 1 0.650 0.649 -0.15 2 0.671 0.670 -0.15 5 0.700 0.700 0.00 10 0.723 0.725 0.28 20 0.752 0.755 0.40 50 0.810 0.809 -0.12 100 0.880 0.875 -0.57 200 0.985 0.987 0.20
  13. 13. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 13 Time 8.8us 9.6us 10.4us 11.2us 12.0us 12.8us I(R1) -400mA -300mA -200mA -100mA -0mA 100mA 200mA 300mA 400mA 0 V1TD = 390ns TF = 5ns PW = 10us PER = 1ms V1 = -9.4V TR = 5ns V2 = 10.6V R1 50 U1 DTK80K04K3Z_P Reverse Recovery Characteristics Circuit Simulation result Evaluation circuit Comparison Measurement vs. Simulation Parameter Unit Measurement Simulation %Error trj ns 24.000 23.862 -0.58 trb ns 366.000 365.848 -0.04 trr ns 390.000 389.710 -0.07
  14. 14. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 14 Reverse Recovery Characteristics Reference Trj = 24(ns) Trb = 366(ns) Conditions: Ifwd = lrev = 0.2(A), Rl = 50 Relation between trj and trb Example Measurement
  15. 15. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 15 V_VGS 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V -I(VGS) 0A 1mA 2mA 3mA 4mA 5mA 6mA 7mA 8mA 9mA 10mA VGS 0 R1 1G U1 TK80K04K3Z ESD PROTECTION DIODE Zener Voltage Characteristics Circuit Simulation result Evaluation circuit
  16. 16. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011 16 Zener Voltage Characteristics Reference IZ = 1(mA) VZ = 24.85(V) at IZ=1mA Measurement

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