SPICE MODEL of TPC8109 (Professional+BDP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Power MOSFET (Professional Model)
PART NUMBER: TPC8109
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Professional Model) /
ESD Protection Diode

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2
MOSFET MODEL
PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3
0
10
20
30
40
50
0 10 20 30 40
TransconductanceGFS(s)
- Drain Current ID (A)
Measurement
Simulation
Transconductance Characteristic
Circuit Simulation Result
Comparison table
-Id(A)
gfs
Error (%)
Measurement Simulation
1 11.200 10.746 -4.05
2 15.000 14.549 -3.01
5 21.800 21.209 -2.71
10 27.900 27.566 -1.20
20 35.500 34.990 -1.44
40 42.000 43.221 2.91

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V_V1
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
0A
-10A
-20A
-30A
-40A
Vgs-Id Characteristic
Circuit Simulation result
Evaluation circuit
V1
0Vdc
V2
-10
0
V3
0Vdc
U1
TPC8109

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5
0
10
20
30
40
0 1 2 3 4 5
-DraincurrentID(A)
- Gate−source voltage VGS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
-ID(A)
- VGS(V)
Error (%)
Measurement Simulation
1 1.950 2.004 2.75
2 2.070 2.082 0.60
5 2.230 2.249 0.85
10 2.450 2.453 0.11
20 2.750 2.771 0.75
40 3.300 3.278 -0.66

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U1
TPC8109
0
V3
0Vdc
VDS
0Vdc
V1
-10
V_VDS
0V -20mV -40mV -60mV -75mV
I(V3)
0A
-1.0A
-2.0A
-3.0A
-4.0A
-5.0A
Rds(on) Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID = -5A, VGS = -10V Measurement Simulation Error (%)
RDS (on) m 14.00 14.07 0.48

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Time*1mA
0 10n 20n 30n 40n 50n
V(W1:4)
0V
-5V
-10V
-15V
-20V
I1TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
VDD
-24
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
10
0
D2
Dbreak
0
U1
TPC8109
Gate Charge Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
VDD=-24V, ID=-10A,
VGS=-10V
Measurement Simulation Error (%)
Qgs nC 6.90 6.89 -0.20
Qgd nC 10.10 10.09 -0.12
Qg nC 46.00 45.88 -0.26

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Capacitance Characteristic
Simulation Result
VSD (V)
Cbd (pF)
Error (%)
Measurement Simulation
0.1 290.000 286.500 -1.207
0.2 270.000 270.400 0.148
0.5 230.000 228.800 -0.522
1 190.000 190.600 0.316
2 150.000 150.030 0.020
5 105.000 103.500 -1.429
10 75.000 75.840 1.120
20 55.000 55.062 0.113
30 45.000 45.517 1.149
Simulation
Measurement

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Time
0.90us 0.95us 1.00us 1.05us 1.10us
V(U1:4) V(U1:5)/1.53
2V
0V
-2V
-4V
-6V
-8V
-10V
-12V
-14V
Switching Time Characteristic
Circuit Simulation result
Evaluation circuit
Simulation Result
ID=-5A, VDD=-15V
VGS=0/10V
Measurement Simulation Error(%)
ton ns 13.00 12.94 -0.48
U1
TPC8109
0
VDD
-15.3Vdc
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
L2
50nH
R2
4.7
R1
4.7
L1
30nH
RL
3

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V2
-5
V1
0
0
V3
0Vdc
U1
TPC8109
V_V2
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
0A
-10A
-20A
-30A
-40A
Output Characteristic
Circuit Simulation result
Evaluation circuit
VGS=-2V
-3.5
-2.25
-2.5
-3.75
-2.75
-3
-3.25
-4
-5
-6
-10,-8

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VDS
0
Vsense
0Vdc
U1
TPC8109
V_VDS
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
100mA
1.0A
10A
100A
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

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0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
DrainreversecurrentIDR(A)
Drain−source voltage VDS (V)
Measurement
Simulation
Comparison Graph
Circuit Simulation Result
Simulation Result
IDR(A)
VDS(V)
%Error
Measurement Simulation
0.1 0.6000 0.6017 0.28
0.2 0.6250 0.6259 0.14
0.5 0.6600 0.6587 -0.20
1 0.6850 0.6848 -0.03
2 0.7150 0.7133 -0.24
5 0.7600 0.7590 -0.14
10 0.8100 0.8065 -0.43
20 0.8750 0.8779 0.34
50 1.0550 1.0524 -0.25

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V1
TD = 90ns
TF = 10ns
PW = 1us
PER = 100us
V1 = -9.4v
TR = 10ns
V2 = 10.6v
U1
DTPC8109_P
R1
50
0
Time
0.6us 0.8us 1.0us 1.2us 1.4us 1.6us
I(R1)
-400mA
-200mA
0A
200mA
400mA
Reverse Recovery Characteristics
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Parameter Unit Measurement Simulation Error (%)
trj ns 16.000 15.809 -1.194
trb ns 36.000 35.953 -0.131
trr ns 52.000 51.762 -0.458

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Reverse Recovery Characteristic Reference
Trj=16.000(ns)
Trb=36.000(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Relation between trj and trb
Example
Measurement

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15
V1
0Vdc
R1
0.001m
0
U1
TPC8109
R2
100MEG
V_V1
0V -10V -20V -30V -40V -50V
I(R1)
0A
-2mA
-4mA
-6mA
-8mA
-10mA
ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
Evaluation Circuit

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16
Zener Voltage Characteristic Reference