SPICE MODEL of IDV06S60C (Professional Model) in SPICE PARK
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SPICE MODEL of IDV06S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of IDV06S60C (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: IDV06S60C MANUFACTURER: Infineon REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 3. Forward Current Characteristic Circuit Simulation Result 20A 18A 16A 14A 12A 10A 8A 6A 4A 2A 0A 0V 1.0V 2.0V 3.0V 4.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc IDV06S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 4. Comparison Graph Circuit Simulation Result 20 Measurement 18 Simulation 16 FORWARD CURRENT: IF(A) 14 12 10 8 6 4 2 0 0 1 2 3 4 FORWARD VOLTAGE: VF(V) Simulation Result VF(V) IF(A) Error (%) Measurement Simulation 1 0.980 0.986 0.58 2 1.100 1.098 -0.15 5 1.380 1.376 -0.26 10 1.800 1.797 -0.18 15 2.200 2.198 -0.07 20 2.600 2.601 0.05 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 5. Junction Capacitance Characteristic Circuit Simulation Result 350p 300p 250p 200p 150p 100p 50p 0 100mV 1.0V 10V 100V 1.0KV I(V2)/(600V/1u) V(N16610) Evaluation Circuit V2 0Vdc V2 = 600 V1 U1 V1 = 0 IDV06S60C TD = 0 TR = 1us TF = 500ns PW = 100us PER = 500us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 6. Comparison Graph Circuit Simulation Result 350 Measurement Simulation 300 250 CAPACITANCE: C(pF) 200 150 100 50 0 0.1 1 10 100 1000 REVERSE VOLTAGE:VR(V) Simulation Result C (pF) VR(V) Error (%) Measurement Simulation 0.1 327.000 328.885 0.58 0.2 319.000 320.359 0.43 0.5 297.000 298.227 0.41 1 268.000 269.864 0.70 2 230.000 231.672 0.73 5 173.220 174.678 0.84 10 134.000 135.225 0.91 20 102.000 102.879 0.86 50 71.733 71.982 0.35 100 56.000 55.860 -0.25 200 42.500 44.464 4.62 600 36.250 34.461 -4.94 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 7. Reverse Characteristic Circuit Simulation Result 10uA 1.0uA 100nA 10nA 1.0nA 100V 200V 300V 400V 500V 600V I(R1) V_V1 Evaluation Circuit R1 100m V1 U1 0Vdc IDV06S60C 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 8. Comparison Graph Circuit Simulation Result 1.E-05 Measurement Simulation REVERSE CURRENT:IR(A) 1.E-06 1.E-07 1.E-08 1.E-09 100 200 300 400 500 600 REVERSE VOLTAGE：VR(V) Simulation Result IR(A) VR(V) Error (%) Measurement Simulation 100 1.600E-09 1.600E-09 0.00 200 4.500E-09 4.488E-09 -0.28 300 1.880E-08 1.884E-08 0.23 400 9.300E-08 9.361E-08 0.66 500 4.850E-07 4.866E-07 0.32 600 2.550E-06 2.555E-06 0.20 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010