SPICE MODEL of STPSC606 (Professional Model) in SPICE PARK
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SPICE MODEL of STPSC606 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of STPSC606 (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: STPSC606 MANUFACTURER: STMicroelectronics REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 3. Forward Current Characteristic Circuit Simulation Result 12A 10A 8A 6A 4A 2A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc STPSC606_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 4. Comparison Graph Circuit Simulation Result 12 Measurement Simulation 10 FORWARD CURRENT: IF(A) 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 FORWARD VOLTAGE: VF(V) Simulation Result VF(V) IF(A) Error (%) Measurement Simulation 0.5 0.9100 0.9091 -0.10 1 0.9850 0.9805 -0.46 2 1.0900 1.0876 -0.22 4 1.2600 1.2658 0.46 6 1.4200 1.4291 0.64 8 1.5800 1.5863 0.40 10 1.7400 1.7402 0.01 12 1.9000 1.8920 -0.42 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 5. Junction Capacitance Characteristic Circuit Simulation Result 300p 250p 200p 150p 100p 50p 0 1.0V 10V 100V 400V I(V2)/(400V/500n) V(N16610) Evaluation Circuit V2 0Vdc V2 = 400 V1 U1 V1 = 0 STPSC606_P TD = 0 TR = 500ns TF = 500ns PW = 100us PER = 500us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 6. Comparison Graph Circuit Simulation Result 300 Measurement Simulation 250 CAPACITANCE: C(pF) 200 150 100 50 0 1 10 100 1000 REVERSE VOLTAGE:VR(V) Simulation Result C (pF) VR(V) Error (%) Measurement Simulation 1 242.000 243.858 0.77 2 210.000 210.014 0.01 5 160.000 160.009 0.01 10 125.000 124.609 -0.31 20 94.000 94.929 0.99 50 64.000 64.942 1.47 100 47.000 48.408 3.00 200 36.000 35.976 -0.07 300 31.000 30.217 -2.53 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 7. Reverse Characteristic Circuit Simulation Result 10mA 1.0mA 100uA 10uA 1.0uA 100nA 0V 50V 100V 150V 200V 250V 300V 350V 400V 450V 500V 550V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc STPSC606_P 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 8. Comparison Graph Circuit Simulation Result 1.E+04 Measurement Simulation 1.E+03 REVERSE CURRENT:IR(uA ) 1.E+02 1.E+01 1.E+00 1.E-01 0 50 100 150 200 250 300 350 400 450 500 550 600 REVERSE VOLTAGE：VR(V) Simulation Result IR(uA) VR(V) Error (%) Measurement Simulation 50 0.430 0.430 -0.03 100 0.780 0.780 0.02 200 2.000 1.998 -0.10 300 4.900 4.900 0.00 400 11.000 10.999 -0.01 500 27.000 27.006 0.02 600 76.000 76.011 0.01 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010