SPICE MODEL of IDT10S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDT10S60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDT10S60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
30A
20A
10A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDT10S60C
0
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5. Comparison Graph
Circuit Simulation result
30
Measurement
Simulation
Forword Current, IF (A)
20
10
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.5 0.936 0.942 0.63
1 0.979 0.983 0.48
2 1.034 1.049 1.47
5 1.221 1.216 -0.48
10 1.500 1.472 -1.89
20 1.993 1.966 -1.36
30 2.443 2.453 0.40
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6. Reverse Current Characteristic
Circuit Simulation result
100uA
10uA
1.0uA
100nA
10nA
1.0nA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
IDT10S60C
0
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7. Comparison Graph
Circuit Simulation result
100
Measurement
Simulation
10
Reverse Current, IR (A)
1
0.1
0.01
0.001
100 200 300 400 500 600
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 2.000E-03 2.024E-03 1.18
200 5.800E-03 5.640E-03 -2.76
500 7.400E-01 7.528E-01 1.73
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8. Junction Capacitance Characteristic
Circuit Simulation result
600p
500p
400p
300p
200p
100p
0
100mV 1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDT10S60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
600
Measurement
Simulation
500
Capacitance, C (pF)
400
300
200
100
0
0.1 1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
0.5 529.167 536.370 1.36
1 479.167 490.676 2.40
2 415.500 425.393 2.38
5 316.667 317.658 0.31
10 244.167 239.598 -1.87
20 183.330 177.700 -3.07
50 122.500 120.871 -1.33
100 91.667 93.852 2.38
200 72.833 76.366 4.85
500 65.500 62.492 -4.59
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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