SPICE MODEL of IDH15S120 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDH15S120
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDH15 S1 20
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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4. Forward Current Characteristics
Circuit Simulation result
30A
25A
20A
15A
10A
5A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDH15S120
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Comparison Graph
Circuit Simulation result
30
Measurement
Simulation
25
Forword Current, IF (A)
20
15
10
5
0
0 1 2 3 4 5
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
1 0.940 0.974 3.63
2 1.020 1.032 1.13
5 1.180 1.174 -0.54
10 1.400 1.389 -0.81
20 1.800 1.801 0.06
30 2.200 2.206 0.27
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6. Reverse Current Characteristic
Circuit Simulation result
1.0mA
100uA
10uA
1.0uA
100nA
10nA
1.0nA
0.2KV 0.4KV 0.6KV 0.8KV 1.0KV 1.2KV
I(U1:K)
V_V1
Evaluation circuit
R1
1m
V1 U1
IDH15S120
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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7. Comparison Graph
Circuit Simulation result
1000
Measurement
Simulation
100
Reverse Current, I R (A)
10
1
0.1
0.01
0.001
200 400 600 800 1000 1200
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
200 0.0250 0.0251 0.220
500 0.1700 0.1653 -2.760
1000 4.0000 4.0703 1.757
1200 15.0000 14.6220 -2.520
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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8. Junction Capacitance Characteristic
Circuit Simulation result
800p
700p
600p
500p
400p
300p
200p
100p
0
1.0V 10V 100V 1.0KV
I(V2)/(1200V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 1200 IDH15S120
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
800
Measurement
700 Simulation
600
Capacitance, C (pF)
500
400
300
200
100
0
1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
1 750.000 763.899 1.85
5 435.000 437.055 0.47
10 320.000 323.265 1.02
50 150.000 151.609 1.07
100 105.000 108.177 3.03
500 51.000 49.983 -1.99
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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