SPICE MODEL of 2SA1202(Y) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS : BIPOLAR JUNCTION TRANSISTOR
PART NUMBER : 2SA1202(Y)
MANUFACTURER : TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

2. Pspice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

3. Reverse Characteristic
Reverse Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAR
VAF
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

5. Forward Characteristic
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

6. Forward DC Beta Characteristic
Measurement
Simulation
Vbe(sat) Voltage Characteristic
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

7. Vce(sat) Voltage Characteristic
Measurement
Simulation
C-B Capacitance Characteristic
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

8. E-B Capacitance Characteristic
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

9. BJT Ic-hFE Characteristics
Circuit simulation result
1.0K
Simulation
100
10
-1.0mA -500mA
IC(Q1)/ IB(Q1)
IC(Q1)
Evaluation circuit
Q1
Q2SA1202_Y
-2 V1
I1
-6m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

10. Comparison graph
Comparison Table
hFE
IC(mA) %Error
Measurement Simulation
-1 135 138.180 2.356
-2 140 142.726 1.947
-5 145 146.399 0.965
-10 144 147.266 2.268
-20 142 145.930 2.768
-50 135 138.692 2.735
-100 125 126.328 1.062
-200 103 105.437 2.366
-300 85 89.151 4.884
-400 75 76.329 1.772
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

11. BJT Vce(sat) voltage& Vbe(sat) voltage Characteristics
Circuit simulation result
0V
Vbe(sat)
-0.5V Vce(sat)
-1.0V
0s 0.5ms 1.0ms
VC(Q1) VB(Q1)
Time
Evaluation circuit
I2
-200m
Q1
Q2SA1202_Y
I1
-20m
0
Comparison Table
IC=-200mA,IB=-20mA Measurement Simulation %Error
VCE (sat) (V) 0.4 0.397841 -0.540
VBE (sat) (V) 0.82 0.823480 0.424
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

12. BJT Output Characteristic
Circuit simulation result
-400mA
-300mA
-200mA
-100mA
0A
0V -2V -4V -6V -8V -10V -12V
IC(Q1)
V_V1
Evaluation circuit
Q1 V1
Q2SA1202_Y -10
I1
-5m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2005