Device Modeling Report




COMPONENTS : BIPOLAR JUNCTION TRANSISTOR
PART NUMBER : 2SA2004
MANUFACTURER : PANASONIC




                  Bee Technologies Inc.


    All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
Pspice model
                                           Model description
 parameter
      IS        Saturation Current
      BF        Ideal Maximum Forward Beta
      NF        Forward Current Emission Coefficient
    VAF         Forward Early Voltage
     IKF        Forward Beta Roll-off Knee Current
     ISE        Non-ideal Base-Emitter Diode Saturation Current
     NE         Non-ideal Base-Emitter Diode Emission Coefficient
     BR         Ideal Maximum Reverse Beta
     NR         Reverse Emission Coefficient
    VAR         Reverse Early Voltage
    IKR         Reverse Beta Roll-off Knee Current
    ISC         Non-ideal Base-Collector Diode Saturation Current
     NC         Non-ideal Base-Collector Diode Emission Coefficient
     NK         Forward Beta Roll-off Slope Exponent
     RE         Emitter Resistance
     RB         Base Resistance
     RC         Series Collector Resistance
    CJE         Zero-bias Emitter-Base Junction Capacitance
    VJE         Emitter-Base Junction Potential
    MJE         Emitter-Base Junction Grading Coefficient
    CJC         Zero-bias Collector-Base Junction Capacitance
    VJC         Collector-base Junction Potential
    MJC         Collector-base Junction Grading Coefficient
      FC        Coefficient for Onset of Forward-bias Depletion
                Capacitance
     TF         Forward Transit Time
    XTF         Coefficient for TF Dependency on Vce
    VTF         Voltage for TF Dependency on Vce
    ITF         Current for TF Dependency on Ic
    PTF         Excess Phase at f=1/2pi*TF
    TR          Reverse Transit Time
    EG          Activation Energy
    XTB         Forward Beta Temperature Coefficient
    XTI         Temperature Coefficient for IS




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
Reverse Characteristic

Reverse Early Voltage Characteristic




                                Ic   (X2,Y2)

            Y=aX+b                                            (X1,Y1)




                                                              Vce
                   VAR
                   VAF




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
Reverse DC Beta Characteristic (Ie vs. hFE)




                                                           Measurement
                                                           Simulation




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
Forward Characteristic

Forward Early Voltage Characteristic




                                 Ic   (X2,Y2)

             Y=aX+b                                           (X1,Y1)




                                                              Vce
                    VAF




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
C-B Capacitance Characteristic



                                                       Measurement
                                                       Simulation




E-B Capacitance Characteristic




                                                          Measurement
                                                          Simulation




           All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
BJT Ic-hFE Characteristics

Circuit simulation result


               1.0K




                                                                 Simulation
                100




                 10




                1.0
                 -1.0mA                                                   -10A
                      IC(Q1)/ IB(Q1)
                                               IC(Q1)




Evaluation circuit




                                           Q1
                                           Q2SA2004

                                                                   -1         V1



                  I1

                 -0.5




                                           0




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
Comparison graph




Comparison Table


                                            hFE
          IC(A)                                                          %Error
                           Measurement             Simulation
          0.001                 139.2                133.515              -4.084
          0.002                141.56                135.926              -3.980
          0.005                143.44                137.969              -3.814
          0.01                 143.88                139.058              -3.351
          0.02                 145.12                139.789              -3.674
          0.05                 145.42                140.199              -3.590
           0.1                 144.42                139.963              -3.086
           0.2                 144.06                138.957              -3.542
           0.5                 139.42                135.319              -2.941
            1                  133.44                128.923              -3.385
            2                   120.3                 115.79              -3.749
            8                  18.294                 19.179              4.838

                All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
BJT Vce(sat) voltage& Vbe(sat) voltage Characteristics

Circuit simulation result

               -1.0V




                                                            Vbe(sat)

               -0.5V                                        Vce(sat)




                     0V
                          0s                     0.5ms                       1.0ms
                               VC(Q1)   VB(Q1)
                                                     Time



Evaluation circuit

                                                                  I2


                                                                       -5




                                                     Q1
                                                     Q2SA2004



                 I1

                -0.25




                                                 0

Comparison Table

       IC=-5A,IB=-0.25A                 Measurement             Simulation           %Error
         VCE (sat) (V)                   -1.2 (max)               -0.275               0
         VBE (sat) (V)                   -1.7 (max)               -0.952               0
                All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
Switching Time

Circuit simulation result

                -5.0A             -500mA
            1               2



                                                                                IB
                -2.5A
                                        0A


                                                                                IC

                   0A
                      >>
                                   500mA
                                       18us            20us       22us               24us
                                         1        IC(Q1) 2    IB(Q1)
                                                               Time



Evaluation circuit

                                                                    L2          R3

                                                                    50n         12.445



                           D1            R1        L1
                                                               Q1
                                                   50n         Q2SA2004
                           DTR          11.05
                           D2            R2                                                 V1
                                                                                      -50
                                         22.15
                 V2               DTR
                      V1 = -4
                      V2 = 10
                      TD = 1u
                      TR = 50n
                      TF = 50n
                      PW = 20u
                      PER = 50u


                                                               0


Comparison Table

   IC=-4A,-IB1= IB2= 400 mA                      Measurement              Simulation             %Error
            tstg (us)                                0.1                   0.101457              1.457
             tf (us)                                 0.5                   0.505049              1.010
                  All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
BJT Output Characteristic

Circuit simulation result


               -1.0A
               -0.9A
               -0.8A
               -0.7A
               -0.6A
               -0.5A
               -0.4A
               -0.3A
               -0.2A
               -0.1A
                     0A
                          0V -0.1V    -0.3V       -0.5V   -0.7V    -0.9V
                             IC(Q1)
                                                  V_V1




Evaluation circuit




                                              Q1                           V1
                                              Q2SA2004             -10




                  I1

                 -5m




                                              0




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
Reference




            All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

SPICE MODEL of 2SA2004 in SPICE PARK

  • 1.
    Device Modeling Report COMPONENTS: BIPOLAR JUNCTION TRANSISTOR PART NUMBER : 2SA2004 MANUFACTURER : PANASONIC Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
  • 2.
    Pspice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
  • 3.
    Reverse Characteristic Reverse EarlyVoltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAR VAF All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
  • 4.
    Reverse DC BetaCharacteristic (Ie vs. hFE) Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
  • 5.
    Forward Characteristic Forward EarlyVoltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAF All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
  • 6.
    C-B Capacitance Characteristic Measurement Simulation E-B Capacitance Characteristic Measurement Simulation All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
  • 7.
    BJT Ic-hFE Characteristics Circuitsimulation result 1.0K Simulation 100 10 1.0 -1.0mA -10A IC(Q1)/ IB(Q1) IC(Q1) Evaluation circuit Q1 Q2SA2004 -1 V1 I1 -0.5 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
  • 8.
    Comparison graph Comparison Table hFE IC(A) %Error Measurement Simulation 0.001 139.2 133.515 -4.084 0.002 141.56 135.926 -3.980 0.005 143.44 137.969 -3.814 0.01 143.88 139.058 -3.351 0.02 145.12 139.789 -3.674 0.05 145.42 140.199 -3.590 0.1 144.42 139.963 -3.086 0.2 144.06 138.957 -3.542 0.5 139.42 135.319 -2.941 1 133.44 128.923 -3.385 2 120.3 115.79 -3.749 8 18.294 19.179 4.838 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
  • 9.
    BJT Vce(sat) voltage&Vbe(sat) voltage Characteristics Circuit simulation result -1.0V Vbe(sat) -0.5V Vce(sat) 0V 0s 0.5ms 1.0ms VC(Q1) VB(Q1) Time Evaluation circuit I2 -5 Q1 Q2SA2004 I1 -0.25 0 Comparison Table IC=-5A,IB=-0.25A Measurement Simulation %Error VCE (sat) (V) -1.2 (max) -0.275 0 VBE (sat) (V) -1.7 (max) -0.952 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
  • 10.
    Switching Time Circuit simulationresult -5.0A -500mA 1 2 IB -2.5A 0A IC 0A >> 500mA 18us 20us 22us 24us 1 IC(Q1) 2 IB(Q1) Time Evaluation circuit L2 R3 50n 12.445 D1 R1 L1 Q1 50n Q2SA2004 DTR 11.05 D2 R2 V1 -50 22.15 V2 DTR V1 = -4 V2 = 10 TD = 1u TR = 50n TF = 50n PW = 20u PER = 50u 0 Comparison Table IC=-4A,-IB1= IB2= 400 mA Measurement Simulation %Error tstg (us) 0.1 0.101457 1.457 tf (us) 0.5 0.505049 1.010 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
  • 11.
    BJT Output Characteristic Circuitsimulation result -1.0A -0.9A -0.8A -0.7A -0.6A -0.5A -0.4A -0.3A -0.2A -0.1A 0A 0V -0.1V -0.3V -0.5V -0.7V -0.9V IC(Q1) V_V1 Evaluation circuit Q1 V1 Q2SA2004 -10 I1 -5m 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2006
  • 12.
    Reference All Rights Reserved Copyright (C) Bee Technologies Inc. 2006