This document provides a summary of a report by System Plus Consulting on Wolfspeed's 900V SiC MOSFET family. The report includes a technical and cost analysis of Wolfspeed's third generation C3M0280090D 900V 11.5A SiC MOSFET device, an overview of the C3M0120090D and C3M0065090D, and a cost evolution analysis over five years. It also compares the C3M family to previous generations of Cree SiC MOSFETs and provides a cost comparison to Infineon Si MOSFETs and GaN Systems GaN HEMTs.
Rohm SiC MOSFET Gen3 Trench Design Familysystem_plus
Trench technology in Rohm 650V and 1200V SiC MOSFETs.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/rohm-sic-mosfet-gen3-trench-design-family/
The 1st generation 1200V SiC MOSFET device from STMicroelectronics has good current density at a very competitive cost
The STC30N120 is the first generation 1200V SiC MOSFET device from STMicroelectronics. The device has a planar structure and a design that allows good electrical performance, such as high current density. Moreover, the supply chain and manufacturing choices lead to a very competitive cost.
The device is suitable for high power applications like motor drives, inverters, DC-DC converters and power supplies.
The STC30N120 integrates first generation high-voltage SiC power MOSFET dies in a dedicated discrete package.
The device is assumed to operate at very high temperature, up to 200°C, and to have an on-resistance of 90mΩ, with generally standard SiC manufacturing technology.
The report goes into depth in its analysis of the packaging and the components, with images of the complex planar SiC structure.
It also includes production cost analysis and detailed comparison with Rohm and Wolfspeed’s SiC MOSFETs and with 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.
For more information, please visit our website: http://www.i-micronews.com/reports.html
1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...system_plus
The document provides a teardown analysis of Infineon's 1200V 50A CoolSiC MOSFET module, including a profile of Infineon, physical analysis of the module components, a description of the manufacturing processes, a cost analysis, and comparisons to other SiC MOSFET solutions. Through physical analysis, the report reveals Infineon's innovative SiC MOSFET and Schottky diode design assets. Manufacturing process details and a cost analysis estimate the costs to produce the module.
1200V Silicon IGBT vs SiC MOSFET Comparison 2018system_plus
Technology and cost analysis of thirteen silicon IGBTs and eight SiC MOSFETs from eight different manufacturers shows their potential.
More information on that report at: http://www.systemplus.fr/fr/reverse-costing-reports/1200v-silicon-igbt-vs-sic-mosfet-comparison-2018/
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
The BSM180D12P3C007 offers a higher operating temperature (up to 150°C) in a 45mm x 122mm x 21mm package.
The report goes into depth in its analysis of the packaging and the components, with images of the complex trench SiC structure.
It also includes production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module.
More information on that report at http://www.i-micronews.com/reports.html
Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...Yole Developpement
Rohm SCH2080KE SiC Transistor
2nd Generation SiC MOSFET with SiC-SBD
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The SCH2080KE from ROHM Semiconductor is a 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET. With a breakdown voltage of 1200V for a current of 28A (100°C), the SCH2080KE offers a very low on-resistance (80mΩ), a fast switching speed and a fast reverse recovery.
This MOSFET is already integrated in power modules by Danfoss for PV inverters and in train engine modules co-developed with Alstom. Rohm SiC MOSFET offers a second source to the CREE SiC MOSFET.
System Plus Consulting is publishing a reverse costing report on the SCH2080KE. Based on a complete teardown analysis, the report provides an estimation of the production cost of the SCH2080KE package, SiC MOSFET Transistor and Schottky Barrier Diode.
More information on that report at http://www.i-micronews.com/reports/Rohm-SCH2080KE-SiC-Transistor-2nd-Generation-SiC-MOSFET-SiC/12/432/
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Invertersystem_plus
Multiple optimized packaging innovations for this automotive power module from Vitesco Technologies.
More : https://www.systemplus.fr/reverse-costing-reports/vitesco-technologies-power-module-in-jaguar-i-pace-inverter/
Rohm SiC MOSFET Gen3 Trench Design Familysystem_plus
Trench technology in Rohm 650V and 1200V SiC MOSFETs.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/rohm-sic-mosfet-gen3-trench-design-family/
The 1st generation 1200V SiC MOSFET device from STMicroelectronics has good current density at a very competitive cost
The STC30N120 is the first generation 1200V SiC MOSFET device from STMicroelectronics. The device has a planar structure and a design that allows good electrical performance, such as high current density. Moreover, the supply chain and manufacturing choices lead to a very competitive cost.
The device is suitable for high power applications like motor drives, inverters, DC-DC converters and power supplies.
The STC30N120 integrates first generation high-voltage SiC power MOSFET dies in a dedicated discrete package.
The device is assumed to operate at very high temperature, up to 200°C, and to have an on-resistance of 90mΩ, with generally standard SiC manufacturing technology.
The report goes into depth in its analysis of the packaging and the components, with images of the complex planar SiC structure.
It also includes production cost analysis and detailed comparison with Rohm and Wolfspeed’s SiC MOSFETs and with 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.
For more information, please visit our website: http://www.i-micronews.com/reports.html
1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...system_plus
The document provides a teardown analysis of Infineon's 1200V 50A CoolSiC MOSFET module, including a profile of Infineon, physical analysis of the module components, a description of the manufacturing processes, a cost analysis, and comparisons to other SiC MOSFET solutions. Through physical analysis, the report reveals Infineon's innovative SiC MOSFET and Schottky diode design assets. Manufacturing process details and a cost analysis estimate the costs to produce the module.
1200V Silicon IGBT vs SiC MOSFET Comparison 2018system_plus
Technology and cost analysis of thirteen silicon IGBTs and eight SiC MOSFETs from eight different manufacturers shows their potential.
More information on that report at: http://www.systemplus.fr/fr/reverse-costing-reports/1200v-silicon-igbt-vs-sic-mosfet-comparison-2018/
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
The BSM180D12P3C007 offers a higher operating temperature (up to 150°C) in a 45mm x 122mm x 21mm package.
The report goes into depth in its analysis of the packaging and the components, with images of the complex trench SiC structure.
It also includes production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module.
More information on that report at http://www.i-micronews.com/reports.html
Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...Yole Developpement
Rohm SCH2080KE SiC Transistor
2nd Generation SiC MOSFET with SiC-SBD
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The SCH2080KE from ROHM Semiconductor is a 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET. With a breakdown voltage of 1200V for a current of 28A (100°C), the SCH2080KE offers a very low on-resistance (80mΩ), a fast switching speed and a fast reverse recovery.
This MOSFET is already integrated in power modules by Danfoss for PV inverters and in train engine modules co-developed with Alstom. Rohm SiC MOSFET offers a second source to the CREE SiC MOSFET.
System Plus Consulting is publishing a reverse costing report on the SCH2080KE. Based on a complete teardown analysis, the report provides an estimation of the production cost of the SCH2080KE package, SiC MOSFET Transistor and Schottky Barrier Diode.
More information on that report at http://www.i-micronews.com/reports/Rohm-SCH2080KE-SiC-Transistor-2nd-Generation-SiC-MOSFET-SiC/12/432/
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Invertersystem_plus
Multiple optimized packaging innovations for this automotive power module from Vitesco Technologies.
More : https://www.systemplus.fr/reverse-costing-reports/vitesco-technologies-power-module-in-jaguar-i-pace-inverter/
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...Yole Developpement
GaN market growth is fed by Lidar, wireless charging and fast charging solutions.
More information on : https://www.i-micronews.com/category-listing/product/power-gan-2018-epitaxy-devices-applications-and-technology-trends.html
Tesla Model 3 Inverter with SiC Power Module from STMicroelectronicssystem_plus
The first SiC power module in commercialized electric vehicles.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/tesla-model-3-inverter-with-sic-power-module-from-stmicroelectronics/
Discover Infineon‘s first double sided cooling power module for automotive.
More information on that report at https://www.i-micronews.com/category-listing/product/infineon-ff400r07a01e3-double-side-cooled-igbt-module.html
RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...Yole Developpement
GaN RF market growth is fed by military and 5G wireless infrastructure applications.
More information on https://www.i-micronews.com/products/rf-gan-market-applications-players-technology-and-substrates-2019/
Samsung Exynos 9110 with ePLP: First Generation of Samsung’s Fan-Out Panel Le...system_plus
This report provides a reverse cost analysis of Samsung's Exynos 9110 application processor module used in the Samsung Galaxy Watch. The module utilizes Samsung's innovative ePLP (embedded Panel-Level Packaging) technology, which enables a package-on-package configuration with an embedded DRAM die. The ePLP module is extremely small at less than 80mm2 and includes the Exynos 9110 application processor die and a Samsung power management die embedded on a fan-out substrate with four redistribution layers. The report includes physical analysis of the package and dies, comparison to other advanced packaging technologies, manufacturing process flow analysis, and cost analysis.
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...Yole Developpement
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The CAS120M12BM2 from CREE Semiconductor is a power module of 2 transistors with a breakdown voltage of 1200V for a current of 138A (90°C), an ultra low on-resistance (13mΩ), a fast switching speed and a fast reverse recovery.
The CAS120M12BM2 integrates 12 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET dies with a current of 23A (90°C) for 10 sq mm, and 24x Z-Rec diode of 4.8 sq mm are integrated in the power module. The Z-Rec diode is a mix between a Schottky and junction barrier diode....
UnitedSiC UJN1205K 1200V SiC JFET report published by System Plus Consultingsystem_plus
Discover the technological choices made by United Silicon Carbide Inc. (UnitedSiC) for its most advanced SiC JFET and its associated features
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/unitedsic-ujn1205k-1200v-sic-jfet/
Transphorm TPH3002PS 600V GaN on Silicon HEMT 2015 teardown reverse costing r...Yole Developpement
High voltage GaN HEMT developed for the high frequency operation in a low-inductance source terminal TO220 package
The TPH3002PS is a 600V EZ-GaN™ HEMT for high frequency operations from Transphorm. Manufactured by Fujitsu and assembled in a TO220 package, it features the Quiet-TabTM scheme which increases switching speed by 200%. With a 7.5ns turn-on and a 10ns turn-off, the TPH3002PS has a higher switch frequency than the best CoolMOS.
The TPH3002PS is based on a cascode configuration of a GaN on Silicon HEMT transistor to hold the high voltage and a standard low voltage MOSFET to drive high frequency and to make a normally-off transistor from a normally-on GaN HEMT.
The device is assembled in a TO220 package for an easy integration in converter electronic system. Moreover, it integrates a Quiet-Tab™ and a Gate-Source-Drain (GSD) pin-out arrangement in order to reduce the parasitic inductance and capacitance in high frequency and to allow 200% increase in switching speed compared to traditional TO-220.
The report presents a deep technology analysis of the packaging and the components with TEM images of the complex GaN epitaxy layer stack and transistor structure.
It also includes production cost analysis and overall comparison with GaN Systems GS66508P 650V HEMT.
More information on that report at http://www.i-micronews.com/reports.html
Edge Emitting Lasers: Market and Technology Trends 2019 report by Yole Dévelo...Yole Developpement
This document provides an overview and table of contents for a report on edge emitting laser diode market and technology trends from 2019. It includes a 3-page executive summary that analyzes the global EEL market, key applications such as optical communication, sensing, material processing and displays. The report also examines the EEL technology, industry landscape and major players. It aims to give insights into driving forces for the EEL laser source market, technologies and industry in the short, medium and long term.
Mitsubishi J1- Series 650V High-Power Modules for Automotivesystem_plus
The first power module with 7th-gen CSTBT IGBT and an innovative integrated substrate.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/mitsubishi-j1-series-650v-high-power-modules-for-automotive/
Qorvo QPF4006 39GHz GaN MMIC Front End Modulesystem_plus
The first MMIC FEM targeting 5G base stations and terminals using a 0.15µm GaN-on-SiC process.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/qorvo-qpf4006-39ghz-gan-mmic-front-end-module/
Power GaN 2019: Epitaxy, Devices, Applications and Technology Trends - Yole D...Yole Developpement
First design-win for GaN HEMTs in the high-volume smartphone fast charging market.
More information on: https://www.i-micronews.com/products/power-gan-2019-epitaxy-devices-applications-technology-trends/
2.5D heterogeneous and 3D wafer-level stacking are reshaping the packaging landscape.
More information on that report at https://www.i-micronews.com/advanced-packaging-report/product/p2-5d-3d-tsv-wafer-level-stacking-technology-market-updates-2019.html
Status of the Advanced Packaging Industry 2018 Report by Yole Developpement Yole Developpement
In the era of a slowing Moore’s Law, advanced packaging has emerged as the savior of future semiconductor development.
More information on that report at https://www.i-micronews.com/report/product/status-of-the-advanced-packaging-industry-2018.html
GaN and SiC for power electronics applications 2015 Report by Yole DeveloppementYole Developpement
The SiC market is expected to treble and GaN is expected to explode - if challenges are overcome
In 2014, the SiC chip business was worth more than $133M. As in previous years, power factor correction (PFC) and photovoltaics (PV) are still the leading applications.
SiC diodes represent more than 80% of the market. In 2020, diodes will remain the main contributor across various applications, including electric and hybrid electric vehicles (EV/HEV), PV, PFC, wind, Uninterruptible Power Supplies (UPS) and motor drives.
SiC transistors will grow in parallel with diodes, driven by PV inverters. Challenges must be overcome prior to the adoption of pure SiC solutions for EV power train inverters, which is nevertheless expected by 2020.
Including the growth in both diodes and transistors we expect the total SiC market to more than treble by 2020, reaching $436M...
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...Yole Developpement
Dive deep into the technology and cost of GaN-on-silicon HEMTs from EPC, Transphorm, GaN Systems, Panasonic and Texas Instruments.
More information on that report at https://www.i-micronews.com/report/product/gan-on-silicon-transistor-comparison-2018.html
Status of Advanced Substrates 2019 report by Yole DéveloppementYole Developpement
Demands from the new digital age are waking up the sleeping substrate giants.
More information on https://www.i-micronews.com/products/status-of-advanced-substrates-2019/
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...system_plus
The first 80V half-bridge GaN power stage from TI, with innovative packaging.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/texas-instruments-lmg5200-gan-power-stage/
Status of Panel Level Packaging 2018 Report by Yole Developpement Yole Developpement
Panel level packaging players are ready for high volume production.
More information on that report at https://www.i-micronews.com/report/product/status-of-panel-level-packaging-2018.html
Sony IMX400 Tri-layer Stacked CMOS Image Sensor (CIS) with Integrated DRAM an...Yole Developpement
A closer look at the impressive, industry-first, tri-layer stacked CIS.
Sony leads the global CMOS Image Sensor (CIS) market, commanding more than a third share of the industry’s total revenue. And over the years, Sony has maintained its leadership by providing innovative CIS products for original equipment manufacturers like Samsung or Apple. In 2017, Sony as a smartphone designer decided to release in its flagship the latest and potentially the greatest innovation in the past decade of CIS manufacturing.
Inside the Sony Xperia™ XZs and the XZ Premium, the latest Motion Eye™ can be found, with the new IMX400 CIS. This three-layer stacked CIS is made with the traditional pixel array and logic circuit on the same die, but also a 1Gb DRAM memory allowing slow motion at almost 960 frames per second.
This innovative CIS is Sony’s next generation technology. The CIS includes a 22 Mpixel array, a 1Gb DRAM die and a digital signal processor (DSP) on the same die footprint. This is the first tri-layer stacked CIS on the market. In this configuration, Sony can provide a fast readout image sensor with no distortion when shooting fast-moving objects thanks to the high capacity DRAM between the pixel array circuit and the DSP circuit.
Using Sony’s Exmor-RS and Xperi’s Zibond technologies, Sony has managed to integrate the three dies in a single thin, small and cost-effective sensor die. Surprisingly, the die sensor uses a unique sort of TSV at different levels to interconnect the dies.
This report includes a complete analysis of the camera module from the Sony Xperia™ XZs, featuring camera module disassembly and die analyses, processes and cross-sections. It also includes a comparison with the Samsung Galaxy S7, Apple iPhone 7 Plus, and Huawei P9 telephoto camera modules. At the CIS level, it compares the IMX400 with the IMX260, the IMX286, and the latest custom CIS for Apple from Sony’s portfolio. Finally, it contains a complete cost analysis and a selling price estimation of the CIS die.
More information on that report at http://www.i-micronews.com/reports.html
- The document provides a full reverse costing analysis of the Transphorm TPH3206PS 600V GaN-on-silicon HEMT power transistor.
- The analysis includes detailed photos and SEM analysis of the epitaxial layers and transistor structure, as well as an examination of the Quiet-Tab packaging.
- The manufacturing process flows for the GaN HEMT, resistor, MOSFET, and packaging are presented, along with an in-depth cost breakdown analysis.
- Estimates of the manufacturing cost and suggested manufacturer price are provided, and comparisons are made to Transphorm's TPH3002 and GaN Systems' GS66504B.
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...Yole Developpement
Panasonic’s first 600V GaN HEMT has an innovative structure designed to integrate a normally-off transistor in a standard package, without a cascade structure
System Plus Consulting unveils Panasonic’s first GaN HEMT, assembled in a standard TO220 package. Thanks to its specific die design, the component is normally-off without using a cascade structure or special packaging.
Panasonic’s PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.
The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.
Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.
Moreover, this report offers a comparison with GaN Systems’ GS66504B and Transphorm’s GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.
For more information visite us at: http://www.i-micronews.com/reports.html
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...Yole Developpement
GaN market growth is fed by Lidar, wireless charging and fast charging solutions.
More information on : https://www.i-micronews.com/category-listing/product/power-gan-2018-epitaxy-devices-applications-and-technology-trends.html
Tesla Model 3 Inverter with SiC Power Module from STMicroelectronicssystem_plus
The first SiC power module in commercialized electric vehicles.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/tesla-model-3-inverter-with-sic-power-module-from-stmicroelectronics/
Discover Infineon‘s first double sided cooling power module for automotive.
More information on that report at https://www.i-micronews.com/category-listing/product/infineon-ff400r07a01e3-double-side-cooled-igbt-module.html
RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...Yole Developpement
GaN RF market growth is fed by military and 5G wireless infrastructure applications.
More information on https://www.i-micronews.com/products/rf-gan-market-applications-players-technology-and-substrates-2019/
Samsung Exynos 9110 with ePLP: First Generation of Samsung’s Fan-Out Panel Le...system_plus
This report provides a reverse cost analysis of Samsung's Exynos 9110 application processor module used in the Samsung Galaxy Watch. The module utilizes Samsung's innovative ePLP (embedded Panel-Level Packaging) technology, which enables a package-on-package configuration with an embedded DRAM die. The ePLP module is extremely small at less than 80mm2 and includes the Exynos 9110 application processor die and a Samsung power management die embedded on a fan-out substrate with four redistribution layers. The report includes physical analysis of the package and dies, comparison to other advanced packaging technologies, manufacturing process flow analysis, and cost analysis.
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...Yole Developpement
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The CAS120M12BM2 from CREE Semiconductor is a power module of 2 transistors with a breakdown voltage of 1200V for a current of 138A (90°C), an ultra low on-resistance (13mΩ), a fast switching speed and a fast reverse recovery.
The CAS120M12BM2 integrates 12 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET dies with a current of 23A (90°C) for 10 sq mm, and 24x Z-Rec diode of 4.8 sq mm are integrated in the power module. The Z-Rec diode is a mix between a Schottky and junction barrier diode....
UnitedSiC UJN1205K 1200V SiC JFET report published by System Plus Consultingsystem_plus
Discover the technological choices made by United Silicon Carbide Inc. (UnitedSiC) for its most advanced SiC JFET and its associated features
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/unitedsic-ujn1205k-1200v-sic-jfet/
Transphorm TPH3002PS 600V GaN on Silicon HEMT 2015 teardown reverse costing r...Yole Developpement
High voltage GaN HEMT developed for the high frequency operation in a low-inductance source terminal TO220 package
The TPH3002PS is a 600V EZ-GaN™ HEMT for high frequency operations from Transphorm. Manufactured by Fujitsu and assembled in a TO220 package, it features the Quiet-TabTM scheme which increases switching speed by 200%. With a 7.5ns turn-on and a 10ns turn-off, the TPH3002PS has a higher switch frequency than the best CoolMOS.
The TPH3002PS is based on a cascode configuration of a GaN on Silicon HEMT transistor to hold the high voltage and a standard low voltage MOSFET to drive high frequency and to make a normally-off transistor from a normally-on GaN HEMT.
The device is assembled in a TO220 package for an easy integration in converter electronic system. Moreover, it integrates a Quiet-Tab™ and a Gate-Source-Drain (GSD) pin-out arrangement in order to reduce the parasitic inductance and capacitance in high frequency and to allow 200% increase in switching speed compared to traditional TO-220.
The report presents a deep technology analysis of the packaging and the components with TEM images of the complex GaN epitaxy layer stack and transistor structure.
It also includes production cost analysis and overall comparison with GaN Systems GS66508P 650V HEMT.
More information on that report at http://www.i-micronews.com/reports.html
Edge Emitting Lasers: Market and Technology Trends 2019 report by Yole Dévelo...Yole Developpement
This document provides an overview and table of contents for a report on edge emitting laser diode market and technology trends from 2019. It includes a 3-page executive summary that analyzes the global EEL market, key applications such as optical communication, sensing, material processing and displays. The report also examines the EEL technology, industry landscape and major players. It aims to give insights into driving forces for the EEL laser source market, technologies and industry in the short, medium and long term.
Mitsubishi J1- Series 650V High-Power Modules for Automotivesystem_plus
The first power module with 7th-gen CSTBT IGBT and an innovative integrated substrate.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/mitsubishi-j1-series-650v-high-power-modules-for-automotive/
Qorvo QPF4006 39GHz GaN MMIC Front End Modulesystem_plus
The first MMIC FEM targeting 5G base stations and terminals using a 0.15µm GaN-on-SiC process.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/qorvo-qpf4006-39ghz-gan-mmic-front-end-module/
Power GaN 2019: Epitaxy, Devices, Applications and Technology Trends - Yole D...Yole Developpement
First design-win for GaN HEMTs in the high-volume smartphone fast charging market.
More information on: https://www.i-micronews.com/products/power-gan-2019-epitaxy-devices-applications-technology-trends/
2.5D heterogeneous and 3D wafer-level stacking are reshaping the packaging landscape.
More information on that report at https://www.i-micronews.com/advanced-packaging-report/product/p2-5d-3d-tsv-wafer-level-stacking-technology-market-updates-2019.html
Status of the Advanced Packaging Industry 2018 Report by Yole Developpement Yole Developpement
In the era of a slowing Moore’s Law, advanced packaging has emerged as the savior of future semiconductor development.
More information on that report at https://www.i-micronews.com/report/product/status-of-the-advanced-packaging-industry-2018.html
GaN and SiC for power electronics applications 2015 Report by Yole DeveloppementYole Developpement
The SiC market is expected to treble and GaN is expected to explode - if challenges are overcome
In 2014, the SiC chip business was worth more than $133M. As in previous years, power factor correction (PFC) and photovoltaics (PV) are still the leading applications.
SiC diodes represent more than 80% of the market. In 2020, diodes will remain the main contributor across various applications, including electric and hybrid electric vehicles (EV/HEV), PV, PFC, wind, Uninterruptible Power Supplies (UPS) and motor drives.
SiC transistors will grow in parallel with diodes, driven by PV inverters. Challenges must be overcome prior to the adoption of pure SiC solutions for EV power train inverters, which is nevertheless expected by 2020.
Including the growth in both diodes and transistors we expect the total SiC market to more than treble by 2020, reaching $436M...
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...Yole Developpement
Dive deep into the technology and cost of GaN-on-silicon HEMTs from EPC, Transphorm, GaN Systems, Panasonic and Texas Instruments.
More information on that report at https://www.i-micronews.com/report/product/gan-on-silicon-transistor-comparison-2018.html
Status of Advanced Substrates 2019 report by Yole DéveloppementYole Developpement
Demands from the new digital age are waking up the sleeping substrate giants.
More information on https://www.i-micronews.com/products/status-of-advanced-substrates-2019/
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...system_plus
The first 80V half-bridge GaN power stage from TI, with innovative packaging.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/texas-instruments-lmg5200-gan-power-stage/
Status of Panel Level Packaging 2018 Report by Yole Developpement Yole Developpement
Panel level packaging players are ready for high volume production.
More information on that report at https://www.i-micronews.com/report/product/status-of-panel-level-packaging-2018.html
Sony IMX400 Tri-layer Stacked CMOS Image Sensor (CIS) with Integrated DRAM an...Yole Developpement
A closer look at the impressive, industry-first, tri-layer stacked CIS.
Sony leads the global CMOS Image Sensor (CIS) market, commanding more than a third share of the industry’s total revenue. And over the years, Sony has maintained its leadership by providing innovative CIS products for original equipment manufacturers like Samsung or Apple. In 2017, Sony as a smartphone designer decided to release in its flagship the latest and potentially the greatest innovation in the past decade of CIS manufacturing.
Inside the Sony Xperia™ XZs and the XZ Premium, the latest Motion Eye™ can be found, with the new IMX400 CIS. This three-layer stacked CIS is made with the traditional pixel array and logic circuit on the same die, but also a 1Gb DRAM memory allowing slow motion at almost 960 frames per second.
This innovative CIS is Sony’s next generation technology. The CIS includes a 22 Mpixel array, a 1Gb DRAM die and a digital signal processor (DSP) on the same die footprint. This is the first tri-layer stacked CIS on the market. In this configuration, Sony can provide a fast readout image sensor with no distortion when shooting fast-moving objects thanks to the high capacity DRAM between the pixel array circuit and the DSP circuit.
Using Sony’s Exmor-RS and Xperi’s Zibond technologies, Sony has managed to integrate the three dies in a single thin, small and cost-effective sensor die. Surprisingly, the die sensor uses a unique sort of TSV at different levels to interconnect the dies.
This report includes a complete analysis of the camera module from the Sony Xperia™ XZs, featuring camera module disassembly and die analyses, processes and cross-sections. It also includes a comparison with the Samsung Galaxy S7, Apple iPhone 7 Plus, and Huawei P9 telephoto camera modules. At the CIS level, it compares the IMX400 with the IMX260, the IMX286, and the latest custom CIS for Apple from Sony’s portfolio. Finally, it contains a complete cost analysis and a selling price estimation of the CIS die.
More information on that report at http://www.i-micronews.com/reports.html
- The document provides a full reverse costing analysis of the Transphorm TPH3206PS 600V GaN-on-silicon HEMT power transistor.
- The analysis includes detailed photos and SEM analysis of the epitaxial layers and transistor structure, as well as an examination of the Quiet-Tab packaging.
- The manufacturing process flows for the GaN HEMT, resistor, MOSFET, and packaging are presented, along with an in-depth cost breakdown analysis.
- Estimates of the manufacturing cost and suggested manufacturer price are provided, and comparisons are made to Transphorm's TPH3002 and GaN Systems' GS66504B.
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...Yole Developpement
Panasonic’s first 600V GaN HEMT has an innovative structure designed to integrate a normally-off transistor in a standard package, without a cascade structure
System Plus Consulting unveils Panasonic’s first GaN HEMT, assembled in a standard TO220 package. Thanks to its specific die design, the component is normally-off without using a cascade structure or special packaging.
Panasonic’s PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.
The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.
Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.
Moreover, this report offers a comparison with GaN Systems’ GS66504B and Transphorm’s GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.
For more information visite us at: http://www.i-micronews.com/reports.html
Power SiC 2016: Materials, Devices, Modules, and Applications - 2016 Report b...Yole Developpement
More confident and more prepared, power SiC is progressing at a 2015 - 2021 CAGR of 19%!
SiC power is diffusing into multiple application segments
When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? 15 years later, in 2016, people don’t ask these questions anymore. The SiC power business is concrete and real, with a promising outlook. The SiC power market (diode and transistor included) is estimated to be more than $200M in 2015 and forecasted to be more than $550M in 2021, with a 2015 - 2021 CAGR of 19%. Not surprisingly, the power factor correction (PFC) power supply market is still the leading application, consuming a large volume of diodes.
Photovoltaics (PV) inverters are close behind. SiC diodes and MOSFETs are now used by various PV inverter manufacturers in their products. It has been confirmed that SiC implementation provides several performance benefits: increased efficiency, reduced size and weight. In addition, it allows to low cost at the system level in certain power range. Yole Développement has received increasingly positive feedback from the market, and we expect other manufacturers to follow in the footsteps of the early adopters, leading to a rapid expansion of the PV segment in the coming years.
Gate Driver Unit Market for Power Transistors 2014 Report by Yole DeveloppementYole Developpement
This document provides an overview and market analysis of gate driver units (GDUs) for power transistors from 2010 to 2020:
- GDUs are an integral part of power module "brains" and will integrate more features over the next five years to improve performance. The total GDU market is forecast to reach $250 million by 2020, growing at 10% annually.
- The market includes both integrated GDUs inside power modules and standalone plug-and-play units. Multiple business models exist among pure-play, integrated device manufacturer, and systems company suppliers.
- Key applications driving GDU demand include electric vehicles, renewable energy, and smart grids. However, price pressures in consumer markets may
Intel® Curie™ Module High Density System-in-Package for IoT 2016 teardown rev...Yole Developpement
Ultra-small, low-power hardware module for wearables
Intel®, whose microprocessors can be found in almost every computer worldwide, has commenced the 2016 “wearables race” by introducing the Intel® Curie™ module. This tiny system-in-package (SiP) can be found in the latest Arduino® Board: the Genuino 101 for the European version and the Arduino 101 for the US version. The module includes the Intel Quark chip, Bluetooth low-energy radio, sensors, and battery charging, all in a single package of less than 150mm3.
This complete, low-power solution comes with computing, motion sensing, Bluetooth low energy, battery charging, and pattern matching capabilities for optimal sensor data analysis, enabling quick and easy identification of actions and motions. The module is packaged in a tiny form factor and runs a new software platform created especially for the Intel Curie module.
Located on the main board, the system uses non-conventional packaging developed by Intel. The main microcontroller is located at the bottom of the package, with features like Bluetooth and sensors placed on top.
More information on that report at http://www.i-micronews.com/reports.html
Heart-Rate Monitor and Pulse Oximeter Sensor in LED Reflective Solution in the Samsung Galaxy S7
Maxim Integrated is a respected supplier for Samsung’s mobile phone flagships. From the 5th generation Galaxy S5 to the latest Galaxy S7, Maxim’s heart-rate sensor has always been found in the back of the smartphone. The Galaxy S7 uses the latest version of the heart-rate sensor, designed for both smartphone and wearables but very different to previous versions: the MAX30102.
The Samsung Galaxy S7 heart-rate sensor is located on the main board of the smartphone under the camera. The sensor is an optical heart-rate module and a pulse oximeter sensor in an LED reflective solution.
The main die features a photodiode area and an analysis part, with an integrated ambient light cancellation system comprising a photodetector and a wavelength cut-off filter based on Maxim’s proprietary technology. The component features two LEDs: one infra-red (IR) and one red. The LEDs are bonded on silicon substrates, the IR led is manufactured from AlInGaP material and the red LED from GaAs material.
The component is assembled with multiple devices in the package. Compared to the previous generation the design footprint and packaging are totally different. This has made the component more reliable.
Thanks to all these innovations, the MAX30102 is very cost effective, enforcing Maxim’s leadership in this domain.
Complete chip fabrication processes and cost estimation are presented in the report. It also includes comparison with the previous generation of the sensor that can be found in the Samsung Galaxy S6, highlighting and measuring all the differences.
More information on that report at http://www.i-micronews.com/reports.html
Growth, supply chain, new applications: inverter industry is about to redefine itself.
The inverter market is heavily application dependent. However, there are some cross-fertilization trends — companies with a good position within one inverter market segment are researching entry into other segments. Companies like Alstom, ABB, Ingeteam, Siemens, and General Electric already offer products in two or more inverter segments.
Some players have chosen vertical integration to optimize their internal cost structure to better target commodity-like markets, as well as to meet the severe cost requirements of the automotive industry. Other players have bet on horizontal integration to offer complete solutions to customers.
Industry’s first Custom-Programmable System-in-Package 9-Axis Motion Sensor
Like its competitor InvenSense, BOSCH Sensortec has unveiled a programmable all-in-one motion sensor for robotics, gaming, and household IoT devices, touted as the industry’s first custom-programmable 9-axis motion sensor.
The BMF055 is a new version of the BOSCH Sensortec 9-axis device (3-axis Gyroscope + 3-axis Accelerometer + 3-axis Magnetometer), with a MCU included in the package. Compared to the stand-alone sensor hub, this new approach eliminates a package and reduces system-level power. This device integrates six-chip in a complex System-in-Package.
The sensor hub combines a 14-bit accelerometer, a 16-bit gyroscope, and a geomagnetic sensor with a 32-bit ARM Cortex M0+ core. Compared to rivals, BOSCH Sensortec targets a broader range of customer applications with a high precision-sensor and dedicated MCU.
With BOSCH Sensortec’s approach, the MEMS sensor and the ASIC are fabricated separately. Final assembly entails wire bonding of all parts . The BMF055 is shipped in a 5.8x3.2x1.15mm LGA package, a footprint that’s larger than the competition.
This report features a detailed technology and cost comparison with the leading-edge sensor hub from InvenSense, highlighting the different choices from the two different designers.
More information on that report at http://www.i-micronews.com/reports.html
InvenSense MP67B 6-Axis MEMS IMU in iPhone 6 & 6 Plus 2015 teardown reverse c...Yole Developpement
InvenSense MP67B
6-Axis MEMS IMU in iPhone 6 & 6 Plus
InvenSense's first design win in Apple iPhone
InvenSense's Second Generation 6-Axis Devices for Consumer Applications
With 74.5 million units of iPhone sold during the last quarter 2014, InvenSense made a very good deal by replacing STMicroelectronics as the supplier of the gyroscope for the iPhone 6 and 6 Plus.
The MP67B is a custom version of InvenSense 6-Axis device (3-Axis gyroscope + 3-Axis accelerometer) made for Apple. Compared to InvenSense’s standard 6-Axis device MPU-6500, specific modifications have been realized. The main ones consist in the package modification with the use of a LGA substrate compared to a QFN leadframe, and in the ASIC which has been redesigned.
The MP67B uses a different design than InvenSense’s first generation 6-axis device with a new design of the 3-axis gyroscope which now uses a single structure vibratory compared to three different structures for the previous generation of gyros. This new design results in a shrink of 40% of the 3-axis gyro area. The second benefit of this new design is that Nasiri process has been changed: cavities which were traditionally etched in the ASIC to allow MEMS structures moving are no longer used, thus resulting in cost reduction.
The report includes a complete comparison with InvenSense standard 6-Axis (MPU-6500) and with InvenSense first generation 6-Axis device.
More information on that report at http://www.i-micronews.com/reports.html
Thermal Expert Infrared Camera for Smartphones and I3system I3BOL384_17A Micr...Yole Developpement
The highest resolution thermal camera for smartphones at 384 x 288 pixels, using a microbolometer with 17µm pixels from the South Korea’s I3 System.
Based on a high definition microbolometer from I3system, the Thermal Expert infrared camera is a high-end product for smartphones. A more conservative technological choice, the microbolometer is more expensive but offers better performance. The camera also embraces the quality approach with interchangeable lenses for different uses. I3system targets the professional market and competes more in standard IR cameras than IR cameras for smartphones.
The Thermal Expert camera is very compact and compatible with Android smartphones via its micro-USB-OTG connector. The camera does not use a battery, with power being supplied by the smartphone. The camera is shutterless.
The thermal camera uses a new 17µm pixel design from I3system. The I3BOL384_17A microbolometer features 384 x 288 pixel resolution, 24 times the resolution of the FLIR Lepton. The sensor technology in the I3system component is a titanium oxide microbolometer, technology which is not covered by Honeywell patents. The I3BOL384_17A is the consumer version of a military microbolometer.
This report presents a complete teardown analysis of the Thermal Expert camera and its microbolometer. Based on this, it provides the bill-of-material (BOM) and manufacturing cost of the infrared camera. The report also offers a complete physical analysis and manufacturing cost estimate of the infrared module, including the lens module and the microbolometer itself.
The report’s final component is a comparison between the characteristics of the FLIR One, Seek Thermal, Therm-App and Thermal Expert cameras and Lepton, EXC001, PICO384P and I3BOL384_17A microbolometers. The comparison highlights differences in technical choices made by the companies.
More information on that report at http://www.i-micronews.com/reports.html
This 150-page report provides a full reverse costing analysis of Freescale's FXTH87 Tire Pressure Monitoring Sensor (TPMS). The report includes a detailed teardown analysis of the package, ASIC die, MEMS pressure sensor die, and MEMS accelerometer die. Manufacturing process flows are established for the ASIC front-end, MEMS pressure sensor, and MEMS accelerometer. Cost analyses are conducted for the various components and manufacturing steps. The report also provides a cost comparison with Infineon's competing SP37 TPMS solution and analyzes the evolution of Freescale's previous-generation TPMS devices.
Murata SCC2000 Series X or Z-Axis Gyro & 3-Axis Accelerometer 2015 teardown r...Yole Developpement
Murata SCC2000 Series X or Z-Axis Gyro & 3-Axis Accelerometer
Automotive MEMS Combo
Murata’s Second Generation Combo Sensors for Automotive & Harsh Environments
Murata SCC2000 series sensors are combined accelerometer and gyroscope devices aimed at use in tough environments such as those encountered in automotive and industrial applications. The SCC2000 series has best in class temperature dependency, shock sensitivity and bias stability characteristics and consists of a low-g 3-axis accelerometer with two angular rate sensor options of either X or Z-axis detection.
The SCC2000 series features independent acceleration and angular rate sensing elements manufactured with Murata proprietary High Aspect Ratio (HAR) 3D-MEMS process and using SOI and cavity-SOI (c-SOI) substrates. A single ASIC produced with an advanced BCD process is used.
The acceleration sensing element consists of four acceleration sensitive masses and the angular rate sensing element consists of moving masses that are purposely exited to in-plane drive motion.
The SCC2000 devices are packaged in a SOIC 24-pin premolded plastic housing measuring 15.0x8.5x4.1mm. The combo sensor is compliant to the ISO26262 automotive safety standard and the AEC-Q100 stress test qualification requirements for electronic components used in automotive applications.
SCC2000 series is targeted for applications demanding high stability with tough environmental requirements. Typical applications include: IMUs for highly demanding environments, platform stabilization and control, machine control systems, Electronic Stability Control (ESC), Hill Start Assist (HSA), roll over detection and Navigation systems.
The report includes the analysis of all combo sensors in the SCC2000 series: the SCC2230-E02, SCC2230-D08 and SCC2130-D08. Also a comparison with previous generation SCC1300 series is included.
More information on that report at http://www.i-micronews.com/reports.html
The first MEMS IMU (3-Axis Gyro + 3-Axis Accelero on the same die) from Maxim Integrated (Maxim) in industry thinnest 3x3x0.83mm package
With the same process used for their 3-Axis gyro and acquired from the purchasing of SensorDynamics in 2011, the MAX21100 combines on only one MEMS die a 3-Axis gyroscope and a 3-Axis accelerometer.
The PSM-X2 technology platform used to build the sensor includes a proprietary surface micromachining process and a gold silicon eutectic wafer bonding allowing an hermetic encapsulation and a dual pressure wafer-level capping of the sensors.
Assembled in a LGA 3.0x3.0x0.83mm package, the MAX21100 is a low power consumption (3.45mA) 3-Axis gyroscope plus 3-Axis accelerometer IMU with integrated 9-axis sensor fusion (6+3 DoF) targeted for consumer applications.
The report is including a detailed technical and cost comparison with state of the art 6-Axis MEMS IMUs (3-Axis gyroscope + 3-Axis accelerometer) from STMicroelectronics, Bosch Sensortec and InvenSense. Surprisingly, Maxim is able to provide a very competitive component due to an important silicon area reduction.
Discover all the details in the report!
This document provides a reverse costing analysis of the Bosch BMX055 9-Axis MEMS IMU. It includes a physical analysis of the package and dies, manufacturing process flows for the ASIC, MEMS, and magnetometer dies, a cost analysis, and estimated selling price. The package is a 4.5x3.0x0.95mm LGA with 3 dies - a gyro/accel ASIC, MEMS gyro/accel dies, and a magnetometer die fabricated using CMOS and MEMS processes. The analysis estimates manufacturing costs and provides a price within a +/- 10% range given available data and industry expertise.
This reverse costing study analyzes the manufacturing cost and estimated selling price of the STMicroelectronics LSM9DS0 9-axis MEMS IMU component. The LSM9DS0 integrates a 3-axis gyroscope, 3-axis accelerometer, and 3-axis magnetometer. It is produced in a 4x4x1mm LGA 24-pin package. The report details the physical analysis of the device and its dies, the manufacturing processes, and provides a cost analysis that estimates the total cost to be $4.28.
Wolfson WM7121 & WM7132 Top & Bottom Port MEMS Microphones teardown reverse c...Yole Developpement
Wolfson WM7121 & WM7132 Top & Bottom Port MEMS Microphones
Discover two innovative silicon microphones of Wolfson integrated in Motorola products
Before its acquisition by Cirrus Logic for $467M in April 2014, Wolfson Microelectronics released a series of analog and digital MEMS microphones with revenues growing 70% from 2012 to 2013.
Teardowns of Motorola moto X smartphone and moto 360 smartwatch revealed that microphone solutions integrate two Wolfson Microelectronics silicon microphones. Wolfson’s WM7121 and WM7132 are respectively top and bottom port analog MEMS microphones.
Assembled in specific LGA cavity packages, the microphones use a capacitive sensing principle based on Wolfson proprietary MEMS technology. This set of 2 reports highlight MEMS and Packaging technologies of Wolfson microphones with a comparison between the two references.
One of the main interest of Wolfson’s MEMS technology is the use of silicon nitride (SiN) instead of polysilicon for the transducer element. According to Wolfson, silicon nitride delivers lower stress and strain coefficients, leading to higher reliability. Discover the impact of this material choice on the manufacturing cost and a comparison with technologies from Knowles and Infineon.
More information on that report at
Qorvo TQF6405 High Band FEM SMR-BAW Filter iPhone 6s Plus 2016 teardown reve...Yole Developpement
The document provides a reverse costing analysis of the Qorvo TQF-6405 front-end module used in the Apple iPhone 6s Plus. It includes a physical analysis of the component and its packaging. The report focuses on the manufacturing cost analysis of the SMR BAW filter die. It estimates the cost of materials and manufacturing steps to determine the total cost of the MEMS wafer and die. This cost is then used to estimate the potential selling price based on the company's financial ratios.
THE SMALLEST MEMS OSCILLATOR ON THE MARKET ASSEMBLED IN AN INNOVATIVE WAFER LEVEL CHIP SIZE PACKAGE
SiTime presents its first MEMS oscillator assembled in Wafer Level Chip Scale package to get the word smallest (1.2mm2) ultra-low power oscillator for consumer and industrial applications.
SiTime is taking fully benefit of all semiconductor manufacturing processes and infrastructures in order to develop a really compact device and compete with quarts solutions for the same application.
This full Reverse Costing analysis has been conducted to provide insight on technology data, manufacturing cost and selling price of the SiTime SiT1552 low-power 32kHz Temperature Compensated Crystal Oscillator.
The report includes comparisons with SiT8002 Oscillator and with the Dicera DSC8002 and Silicon Lab Si504 Oscillators.
SiTime SiT1552 uses an innovative 1.55x0.85 mm Wafer Level Chip Scale Packaging containing two stacked dies: a MEMS oscillator and an ASIC for signal conditioning. The MEMS oscillator is flipped and connected to the ASIC by solder bumps. The component is protected by a polymeric coating and electrically connected by solder balls. For this new generation oscillator, SiTime has integrated many new technologies in order to be competitive to quartz devices.
The MEMS oscillator is manufactured on SOI wafer using MEMSFirstTM and EpiSealTM processes licensed by Robert Bosch GmbH.
Littelfuse and Monolith Semiconductors, in collaboration with X-Fab, have released a 1st-generation, high-reliability MOSFET with the hope of making this silicon carbide product mainstream.
The market outlook for SiC devices is promising, with a compound annual growth rate (CAGR) of 28% from 2016 – 2020. This will increase to 40% from 2020 – 2022 due to growth among automotive and industrial applications. In total, the SiC market will exceed $1B in 2022. In the energy conversion sector, SiC devices have an actual value of $250M, which will increase by around 28% in 2022. The reason for this relates to market forces pushing for loss reduction, not only for the sake of improved efficiency but also for smaller packages.
More information on that report a http://www.systemplus.fr/reverse-costing-reports/littelfuse-silicon-carbide-mosfet-lcis1mo120e0080-1200v-25a-80mohms/
Safran Colibrys VS1000 Series - teardown reverse costing report published by ...Yole Developpement
Safran Colibrys is the leading European supplier of high-performance silicon-based MEMS providing long-term bias stability under harsh environments. In a global market worth around $100M in 2016, high-performance silicon-based MEMS accelerometers address a wide range of applications, from commercial aerospace applications to the defense market. Amongst these, the industrial market remains attractive and the most dynamic. Thanks to performance improvements and reduced size and cost, more opportunities are appearing.
The VS1000 series consists of vibration sensors based on Colibrys’ MEMS accelerometer. They offer the best match for low- to medium-frequency sensing, as well as the best performance stability, with shock resistance and the lowest non-linearity and noise available on the market. The VS1000 is available in various acceleration ranges, from ±2g to ±200g.
The VS1000 features an innovative low-noise application specific integrated circuit (ASIC) developed by HMT microelectronic AG and manufactured in a European foundry with a bipolar CMOS-DMOS process using Deep Trench Isolation (DTI). The ASIC is highly integrated in order to use only one die compared to four dies in the previous versions.
The MEMS die uses a capacitive detection principle and is manufactured by Colibrys using its mature 3-stack bulk micromachining process, providing a very stable MEMS device. The ASIC and MEMS dies are hermetically sealed in a ceramic package to ensure robustness and durability.
More information on: http://www.i-micronews.com/reports.html
This document provides a reverse costing analysis of the Bosch SMI130 6-Axis MEMS IMU. It begins with an executive summary describing the SMI130's key characteristics. The physical analysis identifies the package and die details. Manufacturing process flow is then examined, including the ASIC front-end, MEMS front-end, and packaging back-end stages. A cost analysis is conducted to estimate production costs. Finally, estimated selling prices are provided based on manufacturer financial ratios. The analysis aims to provide technology and cost insights into this MEMS inertial sensor.
This report analyzes the Fairchild FIS1100 6-axis MEMS IMU through reverse costing analysis. The device contains one ASIC die and one MEMS die stacked on a 2-layer PCB package measuring 3.3x3.3x1mm. The MEMS die uses through-silicon vias for electrical connections, allowing for a larger sensing area than previous designs. Manufacturing process steps are estimated for the ASIC, MEMS dies, and packaging. Total estimated manufacturing costs are provided along with comparisons to other leading 6-axis IMUs and an estimated selling price. The analysis is intended to provide insight into the device's technology and costs.
2-Axis Gyroscopes for Optical Image Stabilization: STMicroelectronics L2G2IS ...Yole Developpement
Complete reports and comparison of the latest generation products for smartphones from the leading optical image stabilization gyro players.
2-Axis Gyroscopes for Optical Image Stabilization (OIS) constitute a market where 123 million units were shipped in 2015, according to Yole Développement. This market originates only from high-end smartphones and two players share most of it: InvenSense, with 49%, and STMicroelectronics, with 39%.
The 2-axis gyroscopes are located inside the camera module of high-end smartphones. The main constraints are a small footprint and, more importantly, thinness.
Previously, thickness was the same as standard land grid array (LGA) or quad flat no-leads (QFN) package, close to 1mm. Now the standard is 0.65mm, which products from both InvenSense and STMicroelectronics attain.
InvenSense was first, with the IDG-2030, a 2.3x2.3x0.65mm gyroscope, which is still the smallest on the market. Since its introduction we found it in several smartphones from various manufacturers. The IDG-2030 uses the same Nasiri platform as other InvenSense inertial devices, with wafer-level integration of the MEMS sensor on top of the application specific integrated circuit (ASIC), thus providing only one die in the final LGA package.
Months later, STMicroelectronics released the L2G2IS, which shares the same dimensions. The device is manufactured using the same THELMA process as all STMicroelectronics inertial devices. The THELMA platform involves a two-die approach that is challenging for very thin package integration. However, both players now offer very low-cost gyros thanks to die size reduction and process optimization.
Both gyroscopes analyzed are 2-axis X, Y (Pitch, Roll). The two reports can be purchased separately or together in order to compare the technology and pricing of the main smartphone OIS gyro players, including previous generation products.
More information on that report at http://www.i-micronews.com/reports.html
Silicon Carbide transistors allow a weight reduction and performance improvement
Peak efficiency ratings of up to 98.7% on a wide input voltage range
REFUsol 020K-SCI model has enabled REFUsol to receive Plus X Award for this inverter using Silicon Carbide technology.
With a nominal power of 20KW AC, the transformerless inverter, which provides one MPPT and a peak efficiency of 98.7%, has been distinguished for innovation, high quality, functionality and ecology. The system uses specific power modules from Danfoss. One of the modules uses Silicon Carbide MOSFET Transistors from Rohm and Silicon Carbide Diodes from another manufacturer.
System Plus Consulting is publishing the reverse costing report of the REFUsol 020K-SCI.
Based on a complete teardown analysis, the report provides the bill-of-material of the product, an estimation of the production cost of the inverter as well as physical and economical analysis of Danfoss power modules.
More information at http://www.i-micronews.com/reports/REFUsol-020K-SCI-20-KW-Commercial-PV-Inverter/12/428/
The first UVA/UVB light sensor using innovative resin and very compact package from Capella, Samsung’s top light sensor supplier.
Historically known for its technological capabilities in optoelectronics and recently acquired by Vishay Intertechnology ($205M), Capella releases its integrated UV Sensor based on Filtron™ technology to provide accurate UVA/UVB light sensing.
Apple and Samsung are the first customer of this type of device.
The CM3512 is an UV sensor equipped with photodiode, amplifiers, and analog/digital circuits into a single chip. It is designed by CMOS process and has I2C protocol interface. The use of PCB substrate enables a very compact package.
Compared with state of the art UV Sensors supplied by Rohm Semiconductor and Silicon Labs, the new design developed by Capella is based on patented Filtron™ Technology resin which offers reliable light-filtering capabilities into a variety of polymeric substrates.
Assembled in a OPLGA 2.35 x 1.8 x 1.0mm package, the CM3512 is an advanced sensitivity UV sensor targeted for consumers applications.
More information on that report athttp://www.i-micronews.com/reports/Capella-Microsystems-CM3512-Ultraviolet-Light-Sensor/1/453/
Analog Devices ADIS16460 6-axis MEMS Inertial Sensorsystem_plus
High precision 6-Axis Inertial Measurement Unit for industrial and harsh environments.
More information on that report at: http://www.systemplus.fr/fr/reverse-costing-reports/analog-devices-adis16460-6-axis-mems-inertial-sensor/
A compact, cost-effective and high-performance driving assistance system.
The Mid Range Radar Sensor, with its three Transmitter and four Receiver channels, operates in the 76-77 GHz frequency band that is standard for automotive radar applications. The front version works with an aperture angle of up to +/- 45 degrees and can detect objects up to 160 meters away. With a compact design (using fan-out RF components from Infineon), the system is easy to integrate into a vehicle’s body.
The system integrates two electronic boards including Bosch, Freescale and STMicroelectronics circuits. The RF board is manufactured with an asymmetric structure using Hybrid PTFE/FR4 substrate and is equipped with planar antennas.
Infineon 77GHZ SiGe Monolithic Microwave Integrated Circuits (MMIC) are used as High-Freqency transmitter and receiver.. The two RF dies are packaged is the last version of the eWLB, the Fan-Out Wafer level Package developed and manufactured by Infineon.
Safran Colibrys MS1010 and MEMSIC MXA2500M High-End Accelerometerssystem_plus
Detailed technology and cost analysis of the high-end single-axis and dual-axis accelerometers integrated in the STIM318 IMU.
More information: https://www.systemplus.fr/reverse-costing-reports/safran-colibrys-ms1010-and-memsic-mxa2500m-high-end-accelerometers/
An ultrasonic sensor in a compact housing, with 20-450cm detection range.
Ultrasonic transducers are used in vehicles as parking assistance. The ultrasonic transducer sends out short ultrasonic impulses which are reflected by barriers. The echo signals are registered by the sensor and are evaluated by a central control unit.
This ultrasonic parking sensor from Bosch is very compact with its very few components meaning it is manufactured at low cost. The sensor is made with one electronic board, including a Bosch transceiver integrated circuit (IC) that drives the output of the Epcos/TDK transformer and evaluates the reflected signal. The transducer itself is made of a lead zirconate titanate (PZT) membrane and silver electrodes.
More information on that report at http://www.i-micronews.com/reports.html
The first 3-Axis MEMS Gyroscope to meet Automotive AEC-Q100 qualification
MEMS are getting broadly adopted in the automotive industry and non-safety applications like in-dash navigation are now requiring low-cost and small footprint components.
The A3G4250D is a low power consumption MEMS gyroscope which is the first 3-axis gyroscope to have met the industry-standard qualification for automotive integrated circuits (AEC-Q100).
This 3-axis gyroscope for automotive applications measures angular rates up to ±245 dps. It has been designed and produced using the same manufacturing process (THELMA) than consumer products in order to get full benefit of STMicroelectronics 10 years of consumer electronic market.
Assembled in a 4.0 x 4.0 x 1.1mm package, it embeds an 8-bit temperature sensor and operates within an extended temperature range from -40 to 85°C.
It is suitable for applications including in-dash navigation, telematics and vehicle tolling systems, motion control with MMI (man-machine interface), appliances and robotics.
SETi - UVTOP270TO39HS and SS35DF227513 UVC LEDs for Disinfection and Chemical...Yole Developpement
Deep ultraviolet LEDs with 275nm peak emission in 0.1mm² and 1mm² dies.
This report combines the analysis of two components in order to offer a broad vision of the technologies used by UVC LEDs in terms of applications and power output. The UVTOP270TO39HS and SS35DF227513 are two 275nm UVC LEDs from Sensor Electronic Technology Inc. (SETi). The UVTOP270TO39HS, with its hemispherical lens and 0.1mm² LED, is adapted for fluorescent spectroscopy and chemical /
biological analysis. The SS35DF227513, with its flat window, is designed for disinfection.
The two LED dies are based on the same technology: an AlN template layer deposited on a sapphire substrate. The AlGaN active layers are epitaxied on the AlN layer, but the thickness is very different between the two dies. The SS35DF227513 is manufactured using the latest SETi technological evolution. The new AlN and AlGaN structure reduces the defect density to enhance external quantum efficiency. At 1mm², the SS35DF227513 is 9x taller than SETi’s first UVC LED and boasts 15x more power.
The TO39 with a hemispherical lens is an expensive package, but it is destined for instrumentation. The new SMD3535 package in the SS35DF227513’s ceramic is cheaper and designed for disinfection with a large viewing angle and better thermal resistance that allows continuous use of the 1mm² LED.
This report delivers a deep technology analysis of the packaging and the components, with images of the complex AlN and AlGaN epitaxy layer stack and electrode structure. Also included are a production cost analysis and an overall comparison with the first SETi UVC LED.
More information on that report at http://www.i-micronews.com/reports.html
Similar to Wolfspeed C3M™ Platform SiC 900V MOSFET - teardown reverse costing report published by Yole Developpement (20)
Computing and AI technologies for mobile and consumer applications 2021 - SampleYole Developpement
Penetrating everyday products will see the market for AI technologies for the consumer market reach $5.6B in 2026.
More information : https://www.i-micronews.com/products/computing-and-ai-technologies-for-mobile-and-consumer-applications-2021/
For the first time, the processor monitor is including FPGA, CPU, GPU, and APU including all the IDMs, fabless companies, and foundries in the business.
More information : https://www.i-micronews.com/products/application-processor-quarterly-market-monitor/
For the first time in its history, the automotive industry must face new industrial and technological
challenges while undergoing dramatic changes in its value chain.
More information: https://www.i-micronews.com/products/automotive-semiconductor-trends-2021/
MicroLED Displays - Market, Industry and Technology Trends 2021Yole Developpement
Strong momentum for MicroLED with progress on all fronts. Cost is the biggest challenge, but Apple and Samsung are carving paths toward the consumer.
More information; https://www.i-micronews.com/products/microled-displays-market-industry-and-technology-trends-2021/
System-in-Package Technology and Market Trends 2021 - SampleYole Developpement
Through enabling design and supply chain agility, SiP will reach $19B by 2026, with IDMs, OSATs, and foundries taking advantage of it.
More information : https://www.i-micronews.com/products/system-in-package-technology-and-market-trends-2021/
Industrial, consumer, and automotive applications are driving the adoption of neuromorphic computing and sensing technologies. The first products are now hitting the market.
More information: https://www.i-micronews.com/products/neuromorphic-computing-and-sensing-2021/
Beyond communication, silicon photonics is penetrating consumer and automotive – heading to $1.1B in 2026.
More information: https://www.i-micronews.com/products/silicon-photonics-2021/
Semiconductor technologies will enable increased mobility and communication for the soldier of the future. This market will reach $17.5B in 2030+.
More information: https://www.i-micronews.com/products/future-soldier-technologies-2021/
This report from Yole Développement analyzes the high-end performance packaging market. It defines high-end performance packaging as technologies that provide high IO density (≥16/mm2) and fine IO pitch (≤130μm). The report aims to identify relevant technologies, analyze market drivers and challenges, describe technology trends and roadmaps, examine the supply chain landscape, and provide market forecasts. It evaluates the market by technology, end application, and region. The report also profiles key players' technology roadmaps and analyzes intellectual property in the 3D SoC hybrid bonding space.
5G’s Impact on RF Front-End and Connectivity for Cellphones 2020Yole Developpement
An intensifying US-China competition for RF technology supremacy.
More information on: https://www.i-micronews.com/products/5gs-impact-on-rf-front-end-and-connectivity-for-cellphones-2020/
In the ultrasound module market, CMUT and PMUT are growing two times faster in medical and consumer applications.
More information: https://www.i-micronews.com/products/ultrasound-sensing-technologies-2020/
The entrance of Chinese players and the rise of new technical solutions are poised to trigger profound changes in the memory business.
More information on: https://www.i-micronews.com/products/status-of-the-memory-industry-2020/
GaAs Wafer and Epiwafer Market: RF, Photonics, LED, Display and PV Applicatio...Yole Developpement
The report provides a market analysis of the GaAs wafer and epiwafer markets from 2019 to 2025. It forecasts that the GaAs wafer market will increase from $200 million in 2019 to $348 million in 2025, with the largest application segments being RF, photonics, and LED. The open epiwafer market is also analyzed, with IQE and VPEC together comprising almost 80% of the $262 million total market in 2019. Key drivers of growth are discussed for various applications such as 5G adoption for RF and increasing use of VCSELs for 3D sensing and LiDAR.
Status of the Radar Industry: Players, Applications and Technology Trends 2020Yole Developpement
Worth more than $20B in 2019, the radar industry is experiencing a major transformation prior to entering the commercial era.
Learn more about the report here: https://www.i-micronews.com/products/status-of-the-radar-industry-players-applications-and-technology-trends-2020/
GaN RF Market: Applications, Players, Technology and Substrates 2020Yole Developpement
Driven by military applications and 5G telecom infrastructure, the GaN RF market continues growing.
Learn more about the report here: https://www.i-micronews.com/products/gan-rf-market-applications-players-technology-and-substrates-2020/
Pressure, inertial, MEMS ultrasound, microfluidic chips and other sensors are driving the growth of the life sciences and healthcare market.
More information: https://www.i-micronews.com/products/biomems-market-and-technology-2020/
Market will more than double by 2025 driven by heavy investments in data centers.
More information: https://www.i-micronews.com/products/optical-transceivers-for-datacom-telecom-2020/
COVID-19 is shaking up the diagnostics industry and will have both short- and long-term impact.
More information: https://www.i-micronews.com/products/point-of-need-2020-including-pcr-based-testing/
Pluggable transceivers in high volume production. Co-packaged optics in line of sight.
More information on: https://www.i-micronews.com/products/silicon-photonics-2020/
GraphSummit Singapore | The Art of the Possible with Graph - Q2 2024Neo4j
Neha Bajwa, Vice President of Product Marketing, Neo4j
Join us as we explore breakthrough innovations enabled by interconnected data and AI. Discover firsthand how organizations use relationships in data to uncover contextual insights and solve our most pressing challenges – from optimizing supply chains, detecting fraud, and improving customer experiences to accelerating drug discoveries.
HCL Notes und Domino Lizenzkostenreduzierung in der Welt von DLAUpanagenda
Webinar Recording: https://www.panagenda.com/webinars/hcl-notes-und-domino-lizenzkostenreduzierung-in-der-welt-von-dlau/
DLAU und die Lizenzen nach dem CCB- und CCX-Modell sind für viele in der HCL-Community seit letztem Jahr ein heißes Thema. Als Notes- oder Domino-Kunde haben Sie vielleicht mit unerwartet hohen Benutzerzahlen und Lizenzgebühren zu kämpfen. Sie fragen sich vielleicht, wie diese neue Art der Lizenzierung funktioniert und welchen Nutzen sie Ihnen bringt. Vor allem wollen Sie sicherlich Ihr Budget einhalten und Kosten sparen, wo immer möglich. Das verstehen wir und wir möchten Ihnen dabei helfen!
Wir erklären Ihnen, wie Sie häufige Konfigurationsprobleme lösen können, die dazu führen können, dass mehr Benutzer gezählt werden als nötig, und wie Sie überflüssige oder ungenutzte Konten identifizieren und entfernen können, um Geld zu sparen. Es gibt auch einige Ansätze, die zu unnötigen Ausgaben führen können, z. B. wenn ein Personendokument anstelle eines Mail-Ins für geteilte Mailboxen verwendet wird. Wir zeigen Ihnen solche Fälle und deren Lösungen. Und natürlich erklären wir Ihnen das neue Lizenzmodell.
Nehmen Sie an diesem Webinar teil, bei dem HCL-Ambassador Marc Thomas und Gastredner Franz Walder Ihnen diese neue Welt näherbringen. Es vermittelt Ihnen die Tools und das Know-how, um den Überblick zu bewahren. Sie werden in der Lage sein, Ihre Kosten durch eine optimierte Domino-Konfiguration zu reduzieren und auch in Zukunft gering zu halten.
Diese Themen werden behandelt
- Reduzierung der Lizenzkosten durch Auffinden und Beheben von Fehlkonfigurationen und überflüssigen Konten
- Wie funktionieren CCB- und CCX-Lizenzen wirklich?
- Verstehen des DLAU-Tools und wie man es am besten nutzt
- Tipps für häufige Problembereiche, wie z. B. Team-Postfächer, Funktions-/Testbenutzer usw.
- Praxisbeispiele und Best Practices zum sofortigen Umsetzen
For the full video of this presentation, please visit: https://www.edge-ai-vision.com/2024/06/building-and-scaling-ai-applications-with-the-nx-ai-manager-a-presentation-from-network-optix/
Robin van Emden, Senior Director of Data Science at Network Optix, presents the “Building and Scaling AI Applications with the Nx AI Manager,” tutorial at the May 2024 Embedded Vision Summit.
In this presentation, van Emden covers the basics of scaling edge AI solutions using the Nx tool kit. He emphasizes the process of developing AI models and deploying them globally. He also showcases the conversion of AI models and the creation of effective edge AI pipelines, with a focus on pre-processing, model conversion, selecting the appropriate inference engine for the target hardware and post-processing.
van Emden shows how Nx can simplify the developer’s life and facilitate a rapid transition from concept to production-ready applications.He provides valuable insights into developing scalable and efficient edge AI solutions, with a strong focus on practical implementation.
Best 20 SEO Techniques To Improve Website Visibility In SERPPixlogix Infotech
Boost your website's visibility with proven SEO techniques! Our latest blog dives into essential strategies to enhance your online presence, increase traffic, and rank higher on search engines. From keyword optimization to quality content creation, learn how to make your site stand out in the crowded digital landscape. Discover actionable tips and expert insights to elevate your SEO game.
Climate Impact of Software Testing at Nordic Testing DaysKari Kakkonen
My slides at Nordic Testing Days 6.6.2024
Climate impact / sustainability of software testing discussed on the talk. ICT and testing must carry their part of global responsibility to help with the climat warming. We can minimize the carbon footprint but we can also have a carbon handprint, a positive impact on the climate. Quality characteristics can be added with sustainability, and then measured continuously. Test environments can be used less, and in smaller scale and on demand. Test techniques can be used in optimizing or minimizing number of tests. Test automation can be used to speed up testing.
GraphSummit Singapore | The Future of Agility: Supercharging Digital Transfor...Neo4j
Leonard Jayamohan, Partner & Generative AI Lead, Deloitte
This keynote will reveal how Deloitte leverages Neo4j’s graph power for groundbreaking digital twin solutions, achieving a staggering 100x performance boost. Discover the essential role knowledge graphs play in successful generative AI implementations. Plus, get an exclusive look at an innovative Neo4j + Generative AI solution Deloitte is developing in-house.
In his public lecture, Christian Timmerer provides insights into the fascinating history of video streaming, starting from its humble beginnings before YouTube to the groundbreaking technologies that now dominate platforms like Netflix and ORF ON. Timmerer also presents provocative contributions of his own that have significantly influenced the industry. He concludes by looking at future challenges and invites the audience to join in a discussion.
Infrastructure Challenges in Scaling RAG with Custom AI modelsZilliz
Building Retrieval-Augmented Generation (RAG) systems with open-source and custom AI models is a complex task. This talk explores the challenges in productionizing RAG systems, including retrieval performance, response synthesis, and evaluation. We’ll discuss how to leverage open-source models like text embeddings, language models, and custom fine-tuned models to enhance RAG performance. Additionally, we’ll cover how BentoML can help orchestrate and scale these AI components efficiently, ensuring seamless deployment and management of RAG systems in the cloud.
Full-RAG: A modern architecture for hyper-personalizationZilliz
Mike Del Balso, CEO & Co-Founder at Tecton, presents "Full RAG," a novel approach to AI recommendation systems, aiming to push beyond the limitations of traditional models through a deep integration of contextual insights and real-time data, leveraging the Retrieval-Augmented Generation architecture. This talk will outline Full RAG's potential to significantly enhance personalization, address engineering challenges such as data management and model training, and introduce data enrichment with reranking as a key solution. Attendees will gain crucial insights into the importance of hyperpersonalization in AI, the capabilities of Full RAG for advanced personalization, and strategies for managing complex data integrations for deploying cutting-edge AI solutions.
Goodbye Windows 11: Make Way for Nitrux Linux 3.5.0!SOFTTECHHUB
As the digital landscape continually evolves, operating systems play a critical role in shaping user experiences and productivity. The launch of Nitrux Linux 3.5.0 marks a significant milestone, offering a robust alternative to traditional systems such as Windows 11. This article delves into the essence of Nitrux Linux 3.5.0, exploring its unique features, advantages, and how it stands as a compelling choice for both casual users and tech enthusiasts.
Dr. Sean Tan, Head of Data Science, Changi Airport Group
Discover how Changi Airport Group (CAG) leverages graph technologies and generative AI to revolutionize their search capabilities. This session delves into the unique search needs of CAG’s diverse passengers and customers, showcasing how graph data structures enhance the accuracy and relevance of AI-generated search results, mitigating the risk of “hallucinations” and improving the overall customer journey.
Driving Business Innovation: Latest Generative AI Advancements & Success StorySafe Software
Are you ready to revolutionize how you handle data? Join us for a webinar where we’ll bring you up to speed with the latest advancements in Generative AI technology and discover how leveraging FME with tools from giants like Google Gemini, Amazon, and Microsoft OpenAI can supercharge your workflow efficiency.
During the hour, we’ll take you through:
Guest Speaker Segment with Hannah Barrington: Dive into the world of dynamic real estate marketing with Hannah, the Marketing Manager at Workspace Group. Hear firsthand how their team generates engaging descriptions for thousands of office units by integrating diverse data sources—from PDF floorplans to web pages—using FME transformers, like OpenAIVisionConnector and AnthropicVisionConnector. This use case will show you how GenAI can streamline content creation for marketing across the board.
Ollama Use Case: Learn how Scenario Specialist Dmitri Bagh has utilized Ollama within FME to input data, create custom models, and enhance security protocols. This segment will include demos to illustrate the full capabilities of FME in AI-driven processes.
Custom AI Models: Discover how to leverage FME to build personalized AI models using your data. Whether it’s populating a model with local data for added security or integrating public AI tools, find out how FME facilitates a versatile and secure approach to AI.
We’ll wrap up with a live Q&A session where you can engage with our experts on your specific use cases, and learn more about optimizing your data workflows with AI.
This webinar is ideal for professionals seeking to harness the power of AI within their data management systems while ensuring high levels of customization and security. Whether you're a novice or an expert, gain actionable insights and strategies to elevate your data processes. Join us to see how FME and AI can revolutionize how you work with data!
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liability of the Seller, provided that the Seller ensures the substituted Product is similar to the Product initially ordered.
4.6 In the case where, after inspection, it is acknowledged that the Products contain defects, the Seller undertakes to replace the defective products as far as the supplies allow and without indemnities or compensation of
any kind for labor costs, delays, loss caused or any other reason. The replacement is guaranteed for a maximum of two months starting from the delivery date. Any replacement is excluded for any event as set out in
article 5 below.
4.7 The deadlines that the Seller is asked to state for the mailing of the Products are given for information only and are not guaranteed. If such deadlines are not met, it shall not lead to any damages or cancellation of the
orders, except for non acceptable delays exceeding [4] months from the stated deadline, without information from the Seller. In such case only, the Buyer shall be entitled to ask for a reimbursement of its first down
payment to the exclusion of any further damages.
4.8 The Seller does not make any warranties, express or implied, including, without limitation, those of sale ability and fitness for a particular purpose, with respect to the Products. Although the Seller shall take
reasonable steps to screen Products for infection of viruses, worms, Trojan horses or other codes containing contaminating or destructive properties before making the Products available, the Seller cannot guarantee that
any Product will be free from infection.
5. Force majeure
The Seller shall not be liable for any delay in performance directly or indirectly caused by or resulting from acts of nature, fire, flood, accident, riot, war, government intervention, embargoes, strikes, labor difficulties,
equipment failure, late deliveries by suppliers or other difficulties which are beyond the control, and not the fault of the Seller.
6. Protection of the Seller’s IPR
6.1 All the IPR attached to the Products are and remain the property of the Seller and are protected under French and international copyright law and conventions.
6.2 The Buyer agreed not to disclose, copy, reproduce, redistribute, resell or publish the Product, or any part of it to any other party other than employees of its company. The Buyer shall have the right to use the
Products solely for its own internal information purposes. In particular, the Buyer shall therefore not use the Product for purposes such as:
- Information storage and retrieval systems;
- Recordings and re-transmittals over any network (including any local area network);
- Use in any timesharing, service bureau, bulletin board or similar arrangement or public display;
- Posting any Product to any other online service (including bulletin boards or the Internet);
- Licensing, leasing, selling, offering for sale or assigning the Product.
6.3 The Buyer shall be solely responsible towards the Seller of all infringements of this obligation, whether this infringement comes from its employees or any person to whom the Buyer has sent the Products and shall
personally take care of any related proceedings, and the Buyer shall bear related financial consequences in their entirety.
6.4 The Buyer shall define within its company point of contact for the needs of the contract. This person will be the recipient of each new report in PDF format. This person shall also be responsible for respect of the
copyrights and will guaranty that the Products are not disseminated out of the company.
6.5 In the context of annual subscriptions, the person of contact shall decide who within the Buyer, shall be entitled to access on line the reports on I-micronews.com. In this respect, the Seller will give the Buyer a
maximum of 10 password, unless the multiple sites organization of the Buyer requires more passwords. The Seller reserves the right to check from time to time the correct use of this password.
6.6 In the case of a multisite, multi license, only the employee of the buyer can access the report or the employee of the companies in which the buyer have 100% shares. As a matter of fact the investor of a company,
the joint venture done with a third party etc..cannot access the report and should pay a full license price.
7. Termination
7.1 If the Buyer cancels the order in whole or in part or postpones the date of mailing, the Buyer shall indemnify the Seller for the entire costs that have been incurred as at the date of notification by the Buyer of such
delay or cancellation. This may also apply for any other direct or indirect consequential loss that may be borne by the Seller, following this decision.
7.2 In the event of breach by one Party under these conditions or the order, the non-breaching Party may send a notification to the other by recorded delivery letter upon which, after a period of thirty (30) days without
solving the problem, the non-breaching Party shall be entitled to terminate all the pending orders, without being liable for any compensation.
8. Miscellaneous
All the provisions of these Terms and Conditions are for the benefit of the Seller itself, but also for its licensors, employees and agents. Each of them is entitled to assert and enforce those provisions against the Buyer.
Any notices under these Terms and Conditions shall be given in writing. They shall be effective upon receipt by the other Party.
The Seller may, from time to time, update these Terms and Conditions and the Buyer, is deemed to have accepted the latest version of these terms and conditions, provided they have been communicated to him in due
time.
9. Governing law and jurisdiction
9.1 Any dispute arising out or linked to these Terms and Conditions or to any contract (orders) entered into in application of these Terms and Conditions shall be settled by the French Commercial Courts of Lyon, which
shall have exclusive jurisdiction upon such issues.
9.2 French law shall govern the relation between the Buyer and the Seller, in accordance with these Terms and Conditions.
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