SlideShare a Scribd company logo
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 1
22 Bd Benoni Goullin
44200 NANTES - FRANCE +33 2 40 18 09 16 info@systemplus.fr www.systemplus.fr
Rohm SiC MOSFET Gen 3
Trench Design Family
POWER report by Amine ALLOUCHE & Elena BARBARINI
August 2018 – sample
REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 2
Table of Contents
Introduction 4
o Executive Summary
o Reverse Costing Methodology
o Glossary
o SiC Power Device Market
Company Profile 13
o Rohm
o Portfolio
o Supply Chain
Physical Analysis 20
o Summary of the Physical Analysis
650V MOSFETs : SCT3120AL
 MOSFET Die View & Dimensions
 MOSFET Delayering & main Blocs
 MOSFET Die Process
 MOSFET Die Cross-Section
 MOSFET Die Process Characteristic
o 1200V MOSFETs : BSM180D12P3C007
 MOSFET Die View & Dimensions
 MOSFET Delayering & main Blocs
 MOSFET Die Process
 MOSFET Die Cross-Section
 MOSFET Die Process Characteristic
Manufacturing Process 65
o MOSFET Die Front-End Process
o MOSFET Fabrication Unit
o Packaging Process & Fabrication unit
Cost Analysis 68
o Summary of the cost analysis
o Yields Explanation & Hypotheses
o 650V MOSFETs : SCT3120AL
 MOSFET Die Front-End Cost
 MOSFET Die Probe Test, Thinning & Dicing
 MOSFET Die Wafer Cost
 MOSFET Die Cost
 Assembled Components Cost
 Component Cost
o 1200V MOSFETs : BSM180D12P3C007
 MOSFET Die Front-End Cost
 MOSFET Die Probe Test, Thinning & Dicing
 MOSFET Die Wafer Cost
 MOSFET Die Cost
Selling Price SCT3120AL 86
Comparison 89
o ROHM’s 3G SiC Trench 650V and 1200V MOSFETs
o ROHM’s Gen3 vs Gen2 SiC MOSFET
o ROHM vs Infineon trench design
Feedback 95
System Plus Consulting services 97
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 3
Overview / Introduction
o Executive Summary
o Reverse Costing
Methodology
o Glossary
Company Profile & Supply
Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Executive Summary
The market of SiC devices is promising, with a compound annual growth rate (CAGR) of 31% from 2017 - 2021. This will increase to 44%
to 2022 due to growth among automotive and industrial applications. In total, the SiC market will exceed $1.5B in 2023.
Rohm is the second main actor in SiC MOSFET discrete and modules and it proposes a wide range of devices from 650V up to 1700V.
After just seven years form its first SiC commercial product, Rohm launched its first trench sic mosfet, being the first player to be in
production with this type of technology.
This product family is based on its specific double trench design, the gate trench and the source trench. This design allows a reduction of
almost 50% of the Rdson respect to a planar SiC device and an increase of current density of almost five times respect to Si IGBT with the
same voltage.
The Gen 3 design is proposed for devices with 650V and 1200V on discrete or module packaging.
The report goes into depth in its analysis of the Gen 3 trench Mosfets at 650V and 1200V and proposes optical and SEM images of the
complex trench SiC structure.
It also includes production cost analysis of the SCT3120AL discrete device and of the MOSFET die of the BSM180D12P3C007 module.
The report presents a comparison between 650V and 1200V Gen3 technology devices and Gen3 and Gen2 Rohm’s SiC MOSFETs.
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 4
Overview / Introduction
Company Profile & Supply
Chain
o ROHM
o SiC Portfolio
o Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
ROHM 3rd Generation SiC Trench MOSFETs
 Minimal reverse recovery behavior of the parasitic
diode
 Compared to 2nd generation SiC-MOSFET:
* ON resistance reduced by 50%
* For same-size chip, 35% lower input capacitance
(Ciss)
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 5
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Datasheet
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 6
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Package opening
Gate Wire Bonding:
o 1 Al wire.
o Diameter: xxx µm
o Medium length: xxx mm
Source Wire Bonding:
o 1 Al wire
o Diameter: xxx µm
o Medium length: xxx mm
Package opening
©2018 by System Plus Consulting
Wire bonding
©2018 by System Plus Consulting
Source pad
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 7
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Package Cross-Section
Package cross section
©2018 by System Plus Consulting
The packaging is standard plastic molding.
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 8
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
MOSFET die Dimensions
MOSFET : Optical view
xxxmm
o Die dimensions: xxx mm² (xxx x xxx)
o There is no marking on the die
xxx mm
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 9
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Guard ring
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 10
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Transistor – Delayering
Transistor after delayering – SEM View
Transistor after delayering – SEM View
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 11
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Die - Cross-Section
• Die thickness:xxx µm
Guard ring : Cross-Section SEM view
©2018 by System Plus Consulting
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 12
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Gate - Cross-Section
Gate : Cross-Section SEM view
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 13
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
BSM180D12P3C007 Characteristics
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 14
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
MOSFET Dimensions
• Die dimensions:xxxmm² (xxxmm x xxxmm)
• Thickness: xxxµm
• There is no marking on the die.
MOSFET : Optical view
xxxmm
xxx mm
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 15
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Gate - Cross-Section
Gate : Cross-Section SEM view
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 16
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
o Synthesis
o SCT3120AL
o MOSFET Wafer Cost
o MOSFET Die Cost
o Packaging Cost
o Component Cost
o BSM180D12P3C007
o MOSFET Wafer Cost
o MOSFET Die Cost
Selling Price Analysis
Comparison
Feedbacks
About System Plus
SCT3120AL (650V) MOSFET Front-End Cost
The front-end cost ranges from $xxx to $xxx according to
yield variations.
The main part of the wafer cost is due to the xxx (xxx%).
The xxx represent a large part of consumable and
equipment cost
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 17
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
o Synthesis
o SCT3120AL
o MOSFET Wafer Cost
o MOSFET Die Cost
o Packaging Cost
o Component Cost
o BSM180D12P3C007
o MOSFET Wafer Cost
o MOSFET Die Cost
Selling Price Analysis
Comparison
Feedbacks
About System Plus
SCT3120AL (650V) MOSFET Die Cost
The MOSFET die cost ranges from $xxx to $xxx according
to yield variations.
The xxxx represents xxx% of the component cost,
medium yield.
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 18
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
o Synthesis
o SCT3120AL
o MOSFET Wafer Cost
o MOSFET Die Cost
o Packaging Cost
o Component Cost
o BSM180D12P3C007
o MOSFET Wafer Cost
o MOSFET Die Cost
Selling Price Analysis
Comparison
Feedbacks
About System Plus
SCT3120AL (650V) Component Cost
The component cost ranges from $xxx to $xxx according
to yield variations.
The MOSFET die xxx represents xxx% of the component
cost.
The xxx represents xxxx% of the component cost.
Final test and yield losses account for xxx% of the
component cost.
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 19
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
o SCT3120AL
Comparison
Feedbacks
About System Plus
Estimated Manufacturer Price
The component manufacturing cost ranges
from $xx to $xxx according to yield variations.
With a gross margin estimated to 30%, the
component selling price ranges from $xxx to
$xxx according to yield variations.
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 20
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
o Rohm’s 650V and 1200V
o Rohm Gen3 vs Gen2
o Rohm vs Infineon trench
Feedbacks
About System Plus
Comparison between ROHM’s 650V and 1200V
Parameter 650 V
(SCT3120AL)
1200 V
(BSM180D12P3C007)
Die area (mm²) xxx xxx
Current (Amps at 25°C) xxx xxx
Current density (A/mm²) xxx xxx
Die thickness (µm) xxx xxx
Ring (mm) xxx xxx
Gate oxide thickness (µm) xxx xxx
Trench depth (µm) xxx xxx
Polysilicon gate thickness (µm) xxx xxx
Epitaxy (µm) xxx xxx
Polyimide (µm) xxx xxx
Pitch (µm) xxx xxx
Passivation xxx xxx
Al contact thickness (µm) xxx xxx
Polysilicon Gate width (µm) xxx xxx
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 21
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
o Rohm’s 650V and 1200V
o Rohm Gen3 vs Gen2
o Rohm vs Infineon trench
Feedbacks
About System Plus
Comparison between ROHM’s 650V and 1200V
MOSFET
Current
density
Pitch Wafer thickness Epitaxy Wafer cost A cost
650V Gen 3 xxx xxx xxx xxx xxx xxx
1200V gen 3 xxx xxx xxx xxx xxx xxx
1200V gen 3650V Gen 3
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 22
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
o Company services
o Related reports
o Contact
o Legal
REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING
Related Reports
REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING
POWER & COMPOUNDS
• Cree 1200V SiC MOSFET Module
• 1200V SiC MOSFET vs Silicon IGBT: Technology and cost comparison
• ROHM 1200V Trench SiC MOSFET
• Infineon CooliR²Die™ Power Module
• Toyota Prius Power Modules
• Littelfuse Silicon Carbide MOSFET LSIC1MO120E0080: 1200V 25A
80mOhms
• 1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from
Infineon
• Wolfspeed C2M 1200V SiC MOSFET C2M0025120D
• Tesla Model 3 Inverter with SiC Power Module from
STMicroelectronics
MARKET AND TECHNOLOGY REPORTS - YOLE DÉVELOPPEMENT
Power Electronics & Compound Semiconductors
• Power SiC 2018: Materials, Devices, and Applications
• Power Module Packaging 2018: Material Market and Technology
Trends
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 23
COMPANY
SERVICES
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 24
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
o Company services
o Related reports
o Contact
o Legal
Business Models Fields of Expertise
Custom Analyses
(>130 analyses per year)
Reports
(>40 reports per year)
Costing Tools
Trainings
©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 25
Overview / Introduction
Company Profile & Supply
Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
o Company services
o Related reports
o Contact
o Legal
Contact
www.systemplus.fr
NANTES
Headquarter
FRANKFURT/MAIN
Europe Sales Office
LYON
YOLE HQ
TOKYO
YOLE KK
GREATER CHINA
YOLE
PHOENIX
YOLE Inc.
KOREA
YOLE
Headquarters
22 Boulevard Benoni Goullin
44200 Nantes
FRANCE
+33 2 40 18 09 16
sales@systemplus.fr
Europe Sales Office
Lizzie LEVENEZ
Frankfurt am Main
GERMANY
+49 151 23 54 41 82
llevenez@systemplus.fr
Asia Sales Office
Takashi ONOZAWA
Tokyo
JAPAN
onozawa@yole.fr
Mavis WANG
GREATER CHINA
wang@yole.fr
America Sales Office
Steve LAFERRIERE
Eastern USA
laferriere@yole.fr
Troy BLANCHETTE
Western USA
blanchette@yole.fr
ORDER FORM
Please process my order for “Rohm SiC MOSFET Gen3 Trench Design
Family” Reverse Costing® – Structure, Process & Cost Report
Ref: SP18428
 Full Structure, Process & Cost Report : EUR 3,490*
 Annual Subscription offers possible from 3 reports, including this
report as the first of the year. Contact us for more information.
SHIP TO
Name (Mr/Ms/Dr/Pr): .............................................................
Job Title: …….............................................................................
Company: ….............................................................................
Address: …….............................................................................
City: ………………………………… State: ..........................................
Postcode/Zip: ..........................................................................
Country: ……............................................................................
VAT ID Number for EU members: ..........................................
Tel: ……………….........................................................................
Email: .....................................................................................
Date: ......................................................................................
Signature: ..............................................................................
BILLING CONTACT
First Name : ............................................................................
Last Name: …….......................................................................
Email: …..................................................................................
Phone: ……..............................................................................
PAYMENT
By credit card:
Number: |__|__|__|__| |__|__|__|__| |__|__|__|__|
|__|__|__|__|
Expiration date: |__|__|/|__|__|
Card Verification Value: |__|__|__|
By bank transfer:
HSBC - CAE- Le Terminal -2 rue du Charron - 44800 St Herblain France
BIC code: CCFRFRPP
• In EUR
Bank code : 30056 - Branch code : 00955 - Account :
09550003234
IBAN: FR76 3005 6009 5509 5500 0323 439
• In USD
Bank code : 30056 - Branch code : 00955 - Account :
09550003247
IBAN: FR76 3005 6009 5509 5500 0324 797
Return order by:
FAX: +33 2 53 55 10 59
MAIL: SYSTEM PLUS CONSULTING
22, bd Benoni Goullin
Nantes Biotech
44200 Nantes – France
EMAIL: sales@systemplus.fr
*For price in dollars please use the day’s
exchange rate
*All reports are delivered electronically in
pdf format
*For French customer, add 20 % for VAT
*Our prices are subject to change. Please
check our new releases and price
changes on www.systemplus.fr. The
present document is valid 6 months after
its publishing date: August 2018
REVERSE COSTING® – STRUCTURE, PROCESS & COST REPORTROHM SIC MOSFET GEN3 TRENCH DESIGN FAMILY
Each year System Plus Consulting
releases a comprehensive collection
of new reverse engineering and
costing analyses in various domains.
You can choose to buy over 12
months a set of 3, 4, 5, 7, 10 or 15
Reverse Costing® reports.
Up to 47% discount!
More than 60 reports released each
year on the following topics
(considered for 2018):
• MEMS & Sensors: Accelerometer
– Environment - Fingerprint - Gas -
Gyroscope - IMU/Combo -
Microphone - Optics - Oscillator -
Pressure
• Power: GaN - IGBT - MOSFET - Si
Diode - SiC
• Imaging: Camera - Spectrometer
• LED and Laser: UV LED – VCSEL -
White/blue LED
• Packaging: 3D Packaging -
Embedded - SIP - WLP
• Integrated Circuits: IPD –
Memories – PMIC - SoC
• RF: FEM - Duplexer
• Systems: Automotive - Consumer
- Energy - Telecom
ANNUAL SUBSCRIPTIONS
1. INTRODUCTION
The present terms and conditions apply to the offers, sales and deliveries of services managed by System Plus
Consulting except in the case of a particular written agreement.
Buyer must note that placing an order means an agreement without any restriction with these terms and conditions.
2. PRICES
Prices of the purchased services are those which are in force on the date the order is placed. Prices are in Euros and
worked out without taxes. Consequently, the taxes and possible added costs agreed when the order is placed will be
charged on these initial prices.
System Plus Consulting may change its prices whenever the company thinks it necessary. However, the company
commits itself in invoicing at the prices in force on the date the order is placed.
3. REBATES and DISCOUNTS
The quoted prices already include the rebates and discounts that System Plus Consulting could have granted according
to the number of orders placed by the Buyer, or other specific conditions. No discount is granted in case of early
payment.
4. TERMS OF PAYMENT
System Plus Consulting delivered services are to be paid within 30 days end of month by bank transfer except in the
case of a particular written agreement.
If the payment does not reach System Plus Consulting on the deadline, the Buyer has to pay System Plus Consulting a
penalty for late payment the amount of which is three times the legal interest rate. The legal interest rate is the
current one on the delivery date. This penalty is worked out on the unpaid invoice amount, starting from the invoice
deadline. This penalty is sent without previous notice.
When payment terms are over 30 days end of month, the Buyer has to pay a deposit which amount is 10% of the
total invoice amount when placing his order.
5. OWNERSHIP
System Plus Consulting remains sole owner of the delivered services until total payment of the invoice.
6. DELIVERIES
The delivery schedule on the purchase order is given for information only and cannot be strictly guaranteed.
Consequently any reasonable delay in the delivery of services will not allow the buyer to claim for damages or to
cancel the order.
7. ENTRUSTED GOODS SHIPMENT
The transport costs and risks are fully born by the Buyer. Should the customer wish to ensure the goods against lost or
damage on the base of their real value, he must imperatively point it out to System Plus Consulting when the
shipment takes place. Without any specific requirement, insurance terms for the return of goods will be the carrier
current ones (reimbursement based on good weight instead of the real value).
8. FORCE MAJEURE
System Plus Consulting responsibility will not be involved in non execution or late delivery of one of its duties
described in the current terms and conditions if these are the result of a force majeure case. Therefore, the force
majeure includes all external event unpredictable and irresistible as defined by the article 1148 of the French Code
Civil?
9. CONFIDENTIALITY
As a rule, all information handed by customers to system Plus Consulting are considered as strictly confidential.
A non-disclosure agreement can be signed on demand.
10. RESPONSABILITY LIMITATION
The Buyer is responsible for the use and interpretations he makes of the reports delivered by System Plus Consulting.
Consequently, System Plus Consulting responsibility can in no case be called into question for any direct or indirect
damage, financial or otherwise, that may result from the use of the results of our analysis or results obtained using
one of our costing tools.
11. APPLICABLE LAW
Any dispute that may arise about the interpretation or execution of the current terms and conditions shall be resolved
applying the French law.
It the dispute cannot be settled out-of-court, the competent Court will be the Tribunal de Commerce de Nantes.
TERMS AND CONDITIONS OF SALES

More Related Content

What's hot

Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...
Yole Developpement
 
STMicroelectronics MASTERGAN1 Half-Bridge Driver
STMicroelectronics MASTERGAN1 Half-Bridge DriverSTMicroelectronics MASTERGAN1 Half-Bridge Driver
STMicroelectronics MASTERGAN1 Half-Bridge Driver
system_plus
 
ROHM 1200V Trench SiC MOSFET BSM180D12P3C007 - teardown reverse costing repor...
ROHM 1200V Trench SiC MOSFET BSM180D12P3C007 - teardown reverse costing repor...ROHM 1200V Trench SiC MOSFET BSM180D12P3C007 - teardown reverse costing repor...
ROHM 1200V Trench SiC MOSFET BSM180D12P3C007 - teardown reverse costing repor...
Yole Developpement
 
Power SiC 2018: Materials, Devices and Applications 2018 Report by Yole Devel...
Power SiC 2018: Materials, Devices and Applications 2018 Report by Yole Devel...Power SiC 2018: Materials, Devices and Applications 2018 Report by Yole Devel...
Power SiC 2018: Materials, Devices and Applications 2018 Report by Yole Devel...
Yole Developpement
 
1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...
1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...
1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...
system_plus
 
Qorvo QPF4006 39GHz GaN MMIC Front End Module
Qorvo QPF4006 39GHz GaN MMIC Front End ModuleQorvo QPF4006 39GHz GaN MMIC Front End Module
Qorvo QPF4006 39GHz GaN MMIC Front End Module
system_plus
 
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...
Yole Developpement
 
Status of the Power Module Packaging Industry 2019 - Yole Développement
Status of the Power Module Packaging Industry 2019 - Yole DéveloppementStatus of the Power Module Packaging Industry 2019 - Yole Développement
Status of the Power Module Packaging Industry 2019 - Yole Développement
Yole Developpement
 
Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...
Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...
Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...
Yole Developpement
 
2.5D / 3D TSV & Wafer-Level Stacking: Technology & Market Updates 2019 Report...
2.5D / 3D TSV & Wafer-Level Stacking: Technology & Market Updates 2019 Report...2.5D / 3D TSV & Wafer-Level Stacking: Technology & Market Updates 2019 Report...
2.5D / 3D TSV & Wafer-Level Stacking: Technology & Market Updates 2019 Report...
Yole Developpement
 
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...
Yole Developpement
 
3DIC & 2,5D TSV Interconnect trends 2014 Kinsale Presentation Yole Developpement
3DIC & 2,5D TSV Interconnect trends 2014 Kinsale Presentation Yole Developpement3DIC & 2,5D TSV Interconnect trends 2014 Kinsale Presentation Yole Developpement
3DIC & 2,5D TSV Interconnect trends 2014 Kinsale Presentation Yole Developpement
Yole Developpement
 
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...
system_plus
 
Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...
Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...
Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...
Yole Developpement
 
Power Module Packaging 2018: Material Market and Technology Trends report by ...
Power Module Packaging 2018: Material Market and Technology Trends report by ...Power Module Packaging 2018: Material Market and Technology Trends report by ...
Power Module Packaging 2018: Material Market and Technology Trends report by ...
Yole Developpement
 
RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...
RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...
RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...
Yole Developpement
 
GaN and SiC for power electronics applications 2015 Report by Yole Developpement
GaN and SiC for power electronics applications 2015 Report by Yole DeveloppementGaN and SiC for power electronics applications 2015 Report by Yole Developpement
GaN and SiC for power electronics applications 2015 Report by Yole Developpement
Yole Developpement
 
Murata SCC2000 Series X or Z-Axis Gyro & 3-Axis Accelerometer 2015 teardown r...
Murata SCC2000 Series X or Z-Axis Gyro & 3-Axis Accelerometer 2015 teardown r...Murata SCC2000 Series X or Z-Axis Gyro & 3-Axis Accelerometer 2015 teardown r...
Murata SCC2000 Series X or Z-Axis Gyro & 3-Axis Accelerometer 2015 teardown r...
Yole Developpement
 
Status of the Power Electronics Industry 2017 Report by Yole Developpement
Status of the Power Electronics Industry 2017 Report by Yole Developpement	Status of the Power Electronics Industry 2017 Report by Yole Developpement
Status of the Power Electronics Industry 2017 Report by Yole Developpement
Yole Developpement
 
Transphorm GaN-on-Silicon HEMT TPH3206PS 2016 teardown reverse costing report...
Transphorm GaN-on-Silicon HEMT TPH3206PS 2016 teardown reverse costing report...Transphorm GaN-on-Silicon HEMT TPH3206PS 2016 teardown reverse costing report...
Transphorm GaN-on-Silicon HEMT TPH3206PS 2016 teardown reverse costing report...
Yole Developpement
 

What's hot (20)

Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...
 
STMicroelectronics MASTERGAN1 Half-Bridge Driver
STMicroelectronics MASTERGAN1 Half-Bridge DriverSTMicroelectronics MASTERGAN1 Half-Bridge Driver
STMicroelectronics MASTERGAN1 Half-Bridge Driver
 
ROHM 1200V Trench SiC MOSFET BSM180D12P3C007 - teardown reverse costing repor...
ROHM 1200V Trench SiC MOSFET BSM180D12P3C007 - teardown reverse costing repor...ROHM 1200V Trench SiC MOSFET BSM180D12P3C007 - teardown reverse costing repor...
ROHM 1200V Trench SiC MOSFET BSM180D12P3C007 - teardown reverse costing repor...
 
Power SiC 2018: Materials, Devices and Applications 2018 Report by Yole Devel...
Power SiC 2018: Materials, Devices and Applications 2018 Report by Yole Devel...Power SiC 2018: Materials, Devices and Applications 2018 Report by Yole Devel...
Power SiC 2018: Materials, Devices and Applications 2018 Report by Yole Devel...
 
1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...
1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...
1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...
 
Qorvo QPF4006 39GHz GaN MMIC Front End Module
Qorvo QPF4006 39GHz GaN MMIC Front End ModuleQorvo QPF4006 39GHz GaN MMIC Front End Module
Qorvo QPF4006 39GHz GaN MMIC Front End Module
 
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...
 
Status of the Power Module Packaging Industry 2019 - Yole Développement
Status of the Power Module Packaging Industry 2019 - Yole DéveloppementStatus of the Power Module Packaging Industry 2019 - Yole Développement
Status of the Power Module Packaging Industry 2019 - Yole Développement
 
Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...
Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...
Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...
 
2.5D / 3D TSV & Wafer-Level Stacking: Technology & Market Updates 2019 Report...
2.5D / 3D TSV & Wafer-Level Stacking: Technology & Market Updates 2019 Report...2.5D / 3D TSV & Wafer-Level Stacking: Technology & Market Updates 2019 Report...
2.5D / 3D TSV & Wafer-Level Stacking: Technology & Market Updates 2019 Report...
 
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...
 
3DIC & 2,5D TSV Interconnect trends 2014 Kinsale Presentation Yole Developpement
3DIC & 2,5D TSV Interconnect trends 2014 Kinsale Presentation Yole Developpement3DIC & 2,5D TSV Interconnect trends 2014 Kinsale Presentation Yole Developpement
3DIC & 2,5D TSV Interconnect trends 2014 Kinsale Presentation Yole Developpement
 
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...
 
Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...
Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...
Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...
 
Power Module Packaging 2018: Material Market and Technology Trends report by ...
Power Module Packaging 2018: Material Market and Technology Trends report by ...Power Module Packaging 2018: Material Market and Technology Trends report by ...
Power Module Packaging 2018: Material Market and Technology Trends report by ...
 
RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...
RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...
RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...
 
GaN and SiC for power electronics applications 2015 Report by Yole Developpement
GaN and SiC for power electronics applications 2015 Report by Yole DeveloppementGaN and SiC for power electronics applications 2015 Report by Yole Developpement
GaN and SiC for power electronics applications 2015 Report by Yole Developpement
 
Murata SCC2000 Series X or Z-Axis Gyro & 3-Axis Accelerometer 2015 teardown r...
Murata SCC2000 Series X or Z-Axis Gyro & 3-Axis Accelerometer 2015 teardown r...Murata SCC2000 Series X or Z-Axis Gyro & 3-Axis Accelerometer 2015 teardown r...
Murata SCC2000 Series X or Z-Axis Gyro & 3-Axis Accelerometer 2015 teardown r...
 
Status of the Power Electronics Industry 2017 Report by Yole Developpement
Status of the Power Electronics Industry 2017 Report by Yole Developpement	Status of the Power Electronics Industry 2017 Report by Yole Developpement
Status of the Power Electronics Industry 2017 Report by Yole Developpement
 
Transphorm GaN-on-Silicon HEMT TPH3206PS 2016 teardown reverse costing report...
Transphorm GaN-on-Silicon HEMT TPH3206PS 2016 teardown reverse costing report...Transphorm GaN-on-Silicon HEMT TPH3206PS 2016 teardown reverse costing report...
Transphorm GaN-on-Silicon HEMT TPH3206PS 2016 teardown reverse costing report...
 

Similar to Rohm SiC MOSFET Gen3 Trench Design Family

ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete 2017 teardown reverse costing re...
ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete 2017 teardown reverse costing re...ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete 2017 teardown reverse costing re...
ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete 2017 teardown reverse costing re...
Yole Developpement
 
Littelfuse Silicon Carbide MOSFET LCIS1MO120E0080: 1200V 25A 80mOhms 2018 tea...
Littelfuse Silicon Carbide MOSFET LCIS1MO120E0080: 1200V 25A 80mOhms 2018 tea...Littelfuse Silicon Carbide MOSFET LCIS1MO120E0080: 1200V 25A 80mOhms 2018 tea...
Littelfuse Silicon Carbide MOSFET LCIS1MO120E0080: 1200V 25A 80mOhms 2018 tea...
Yole Developpement
 
UnitedSiC UJN1205K 1200V SiC JFET report published by System Plus Consulting
UnitedSiC UJN1205K 1200V SiC JFET report published by System Plus ConsultingUnitedSiC UJN1205K 1200V SiC JFET report published by System Plus Consulting
UnitedSiC UJN1205K 1200V SiC JFET report published by System Plus Consulting
system_plus
 
Tesla Model 3 Inverter with SiC Power Module from STMicroelectronics
Tesla Model 3 Inverter with SiC Power Module from STMicroelectronicsTesla Model 3 Inverter with SiC Power Module from STMicroelectronics
Tesla Model 3 Inverter with SiC Power Module from STMicroelectronics
system_plus
 
Mitsubishi J1- Series 650V High-Power Modules for Automotive
Mitsubishi J1- Series 650V High-Power Modules for AutomotiveMitsubishi J1- Series 650V High-Power Modules for Automotive
Mitsubishi J1- Series 650V High-Power Modules for Automotive
system_plus
 
Tesla UBQ01B0 FSD Chip
Tesla UBQ01B0 FSD ChipTesla UBQ01B0 FSD Chip
Tesla UBQ01B0 FSD Chip
system_plus
 
Safran Colibrys VS1000 Series - teardown reverse costing report published by ...
Safran Colibrys VS1000 Series - teardown reverse costing report published by ...Safran Colibrys VS1000 Series - teardown reverse costing report published by ...
Safran Colibrys VS1000 Series - teardown reverse costing report published by ...
Yole Developpement
 
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Inverter
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE InverterSPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Inverter
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Inverter
system_plus
 
Qualcomm QCA9500 60 GHz Chipset - reverse costing report published by System ...
Qualcomm QCA9500 60 GHz Chipset - reverse costing report published by System ...Qualcomm QCA9500 60 GHz Chipset - reverse costing report published by System ...
Qualcomm QCA9500 60 GHz Chipset - reverse costing report published by System ...
system_plus
 
Bosch sensortec bmp380 barometric pressure sensor 2017 teardown reverse costi...
Bosch sensortec bmp380 barometric pressure sensor 2017 teardown reverse costi...Bosch sensortec bmp380 barometric pressure sensor 2017 teardown reverse costi...
Bosch sensortec bmp380 barometric pressure sensor 2017 teardown reverse costi...
system_plus
 
Broadcom AFEM8200 MBHB PAMiD
Broadcom AFEM8200 MBHB PAMiDBroadcom AFEM8200 MBHB PAMiD
Broadcom AFEM8200 MBHB PAMiD
system_plus
 
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...
Yole Developpement
 
IRJET- Modeling & Analysis of a 100CC I.C. Engine Connecting ROD
IRJET-  	  Modeling & Analysis of a 100CC I.C. Engine Connecting RODIRJET-  	  Modeling & Analysis of a 100CC I.C. Engine Connecting ROD
IRJET- Modeling & Analysis of a 100CC I.C. Engine Connecting ROD
IRJET Journal
 
2-Axis Gyroscopes for Optical Image Stabilization: STMicroelectronics L2G2IS ...
2-Axis Gyroscopes for Optical Image Stabilization: STMicroelectronics L2G2IS ...2-Axis Gyroscopes for Optical Image Stabilization: STMicroelectronics L2G2IS ...
2-Axis Gyroscopes for Optical Image Stabilization: STMicroelectronics L2G2IS ...
Yole Developpement
 
CSIRO Additive Manufacturing - Aug 14
CSIRO Additive Manufacturing - Aug 14CSIRO Additive Manufacturing - Aug 14
CSIRO Additive Manufacturing - Aug 14
SME_Engagement
 
Tronics GYPRO3300 Angular Rate Sensor - reverse costing report published by S...
Tronics GYPRO3300 Angular Rate Sensor - reverse costing report published by S...Tronics GYPRO3300 Angular Rate Sensor - reverse costing report published by S...
Tronics GYPRO3300 Angular Rate Sensor - reverse costing report published by S...
system_plus
 
Qualcomm 60GHz WiGig/WiFi 802.11ad Chipset World’s First Smartphone Edition
Qualcomm 60GHz WiGig/WiFi 802.11ad Chipset World’s First Smartphone EditionQualcomm 60GHz WiGig/WiFi 802.11ad Chipset World’s First Smartphone Edition
Qualcomm 60GHz WiGig/WiFi 802.11ad Chipset World’s First Smartphone Edition
system_plus
 
Alguns aspectos sobre caracterização de materiais e de dispositivos semicondu...
Alguns aspectos sobre caracterização de materiais e de dispositivos semicondu...Alguns aspectos sobre caracterização de materiais e de dispositivos semicondu...
Alguns aspectos sobre caracterização de materiais e de dispositivos semicondu...
Roní Gonçalves
 
Bluetooth 5: System-on-Chip Comparison 2018
Bluetooth 5: System-on-Chip Comparison 2018Bluetooth 5: System-on-Chip Comparison 2018
Bluetooth 5: System-on-Chip Comparison 2018
system_plus
 
Fan-Out and Embedded Die: Technologies & Market Trends 2015 Report by Yole De...
Fan-Out and Embedded Die: Technologies & Market Trends 2015 Report by Yole De...Fan-Out and Embedded Die: Technologies & Market Trends 2015 Report by Yole De...
Fan-Out and Embedded Die: Technologies & Market Trends 2015 Report by Yole De...
Yole Developpement
 

Similar to Rohm SiC MOSFET Gen3 Trench Design Family (20)

ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete 2017 teardown reverse costing re...
ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete 2017 teardown reverse costing re...ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete 2017 teardown reverse costing re...
ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete 2017 teardown reverse costing re...
 
Littelfuse Silicon Carbide MOSFET LCIS1MO120E0080: 1200V 25A 80mOhms 2018 tea...
Littelfuse Silicon Carbide MOSFET LCIS1MO120E0080: 1200V 25A 80mOhms 2018 tea...Littelfuse Silicon Carbide MOSFET LCIS1MO120E0080: 1200V 25A 80mOhms 2018 tea...
Littelfuse Silicon Carbide MOSFET LCIS1MO120E0080: 1200V 25A 80mOhms 2018 tea...
 
UnitedSiC UJN1205K 1200V SiC JFET report published by System Plus Consulting
UnitedSiC UJN1205K 1200V SiC JFET report published by System Plus ConsultingUnitedSiC UJN1205K 1200V SiC JFET report published by System Plus Consulting
UnitedSiC UJN1205K 1200V SiC JFET report published by System Plus Consulting
 
Tesla Model 3 Inverter with SiC Power Module from STMicroelectronics
Tesla Model 3 Inverter with SiC Power Module from STMicroelectronicsTesla Model 3 Inverter with SiC Power Module from STMicroelectronics
Tesla Model 3 Inverter with SiC Power Module from STMicroelectronics
 
Mitsubishi J1- Series 650V High-Power Modules for Automotive
Mitsubishi J1- Series 650V High-Power Modules for AutomotiveMitsubishi J1- Series 650V High-Power Modules for Automotive
Mitsubishi J1- Series 650V High-Power Modules for Automotive
 
Tesla UBQ01B0 FSD Chip
Tesla UBQ01B0 FSD ChipTesla UBQ01B0 FSD Chip
Tesla UBQ01B0 FSD Chip
 
Safran Colibrys VS1000 Series - teardown reverse costing report published by ...
Safran Colibrys VS1000 Series - teardown reverse costing report published by ...Safran Colibrys VS1000 Series - teardown reverse costing report published by ...
Safran Colibrys VS1000 Series - teardown reverse costing report published by ...
 
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Inverter
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE InverterSPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Inverter
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Inverter
 
Qualcomm QCA9500 60 GHz Chipset - reverse costing report published by System ...
Qualcomm QCA9500 60 GHz Chipset - reverse costing report published by System ...Qualcomm QCA9500 60 GHz Chipset - reverse costing report published by System ...
Qualcomm QCA9500 60 GHz Chipset - reverse costing report published by System ...
 
Bosch sensortec bmp380 barometric pressure sensor 2017 teardown reverse costi...
Bosch sensortec bmp380 barometric pressure sensor 2017 teardown reverse costi...Bosch sensortec bmp380 barometric pressure sensor 2017 teardown reverse costi...
Bosch sensortec bmp380 barometric pressure sensor 2017 teardown reverse costi...
 
Broadcom AFEM8200 MBHB PAMiD
Broadcom AFEM8200 MBHB PAMiDBroadcom AFEM8200 MBHB PAMiD
Broadcom AFEM8200 MBHB PAMiD
 
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...
 
IRJET- Modeling & Analysis of a 100CC I.C. Engine Connecting ROD
IRJET-  	  Modeling & Analysis of a 100CC I.C. Engine Connecting RODIRJET-  	  Modeling & Analysis of a 100CC I.C. Engine Connecting ROD
IRJET- Modeling & Analysis of a 100CC I.C. Engine Connecting ROD
 
2-Axis Gyroscopes for Optical Image Stabilization: STMicroelectronics L2G2IS ...
2-Axis Gyroscopes for Optical Image Stabilization: STMicroelectronics L2G2IS ...2-Axis Gyroscopes for Optical Image Stabilization: STMicroelectronics L2G2IS ...
2-Axis Gyroscopes for Optical Image Stabilization: STMicroelectronics L2G2IS ...
 
CSIRO Additive Manufacturing - Aug 14
CSIRO Additive Manufacturing - Aug 14CSIRO Additive Manufacturing - Aug 14
CSIRO Additive Manufacturing - Aug 14
 
Tronics GYPRO3300 Angular Rate Sensor - reverse costing report published by S...
Tronics GYPRO3300 Angular Rate Sensor - reverse costing report published by S...Tronics GYPRO3300 Angular Rate Sensor - reverse costing report published by S...
Tronics GYPRO3300 Angular Rate Sensor - reverse costing report published by S...
 
Qualcomm 60GHz WiGig/WiFi 802.11ad Chipset World’s First Smartphone Edition
Qualcomm 60GHz WiGig/WiFi 802.11ad Chipset World’s First Smartphone EditionQualcomm 60GHz WiGig/WiFi 802.11ad Chipset World’s First Smartphone Edition
Qualcomm 60GHz WiGig/WiFi 802.11ad Chipset World’s First Smartphone Edition
 
Alguns aspectos sobre caracterização de materiais e de dispositivos semicondu...
Alguns aspectos sobre caracterização de materiais e de dispositivos semicondu...Alguns aspectos sobre caracterização de materiais e de dispositivos semicondu...
Alguns aspectos sobre caracterização de materiais e de dispositivos semicondu...
 
Bluetooth 5: System-on-Chip Comparison 2018
Bluetooth 5: System-on-Chip Comparison 2018Bluetooth 5: System-on-Chip Comparison 2018
Bluetooth 5: System-on-Chip Comparison 2018
 
Fan-Out and Embedded Die: Technologies & Market Trends 2015 Report by Yole De...
Fan-Out and Embedded Die: Technologies & Market Trends 2015 Report by Yole De...Fan-Out and Embedded Die: Technologies & Market Trends 2015 Report by Yole De...
Fan-Out and Embedded Die: Technologies & Market Trends 2015 Report by Yole De...
 

More from system_plus

SP20569 - IRay T3S Thermal Camera for Smartphone
SP20569 - IRay T3S Thermal Camera for SmartphoneSP20569 - IRay T3S Thermal Camera for Smartphone
SP20569 - IRay T3S Thermal Camera for Smartphone
system_plus
 
RF Front-End Module Comparison 2021 – Vol. 2 – Focus on 5G Chipset
RF Front-End Module Comparison 2021 – Vol. 2 – Focus on 5G ChipsetRF Front-End Module Comparison 2021 – Vol. 2 – Focus on 5G Chipset
RF Front-End Module Comparison 2021 – Vol. 2 – Focus on 5G Chipset
system_plus
 
RF Front-End Module Comparison 2021 – Vol. 1 – Focus on Apple
RF Front-End Module Comparison 2021 – Vol. 1 – Focus on AppleRF Front-End Module Comparison 2021 – Vol. 1 – Focus on Apple
RF Front-End Module Comparison 2021 – Vol. 1 – Focus on Apple
system_plus
 
Apple iPhone 12 series mmWave 5G Chipset and Antenna
Apple iPhone 12 series mmWave 5G Chipset and AntennaApple iPhone 12 series mmWave 5G Chipset and Antenna
Apple iPhone 12 series mmWave 5G Chipset and Antenna
system_plus
 
NVIDIA A100 ampere GPU
NVIDIA A100 ampere GPUNVIDIA A100 ampere GPU
NVIDIA A100 ampere GPU
system_plus
 
InnoLight’s 400G QSFP-DD Optical Transceiver
InnoLight’s 400G QSFP-DD Optical TransceiverInnoLight’s 400G QSFP-DD Optical Transceiver
InnoLight’s 400G QSFP-DD Optical Transceiver
system_plus
 
EPC2152 half bridge Monolithic GaN IC
EPC2152 half bridge Monolithic GaN ICEPC2152 half bridge Monolithic GaN IC
EPC2152 half bridge Monolithic GaN IC
system_plus
 
Microsoft - Holographic Lens from Hololens 2
Microsoft - Holographic Lens from Hololens 2Microsoft - Holographic Lens from Hololens 2
Microsoft - Holographic Lens from Hololens 2
system_plus
 
ams’ NanEye Mini Camera
ams’ NanEye Mini Cameraams’ NanEye Mini Camera
ams’ NanEye Mini Camera
system_plus
 
Axis P1375-E Network Camera
Axis P1375-E Network CameraAxis P1375-E Network Camera
Axis P1375-E Network Camera
system_plus
 
Hikvision Intelligent Thermal Network Camera (DS-2TD2166-15 V1)
Hikvision Intelligent Thermal Network Camera (DS-2TD2166-15 V1)Hikvision Intelligent Thermal Network Camera (DS-2TD2166-15 V1)
Hikvision Intelligent Thermal Network Camera (DS-2TD2166-15 V1)
system_plus
 
Micron LPDDR5 12GB Mobile Memory
Micron LPDDR5 12GB Mobile MemoryMicron LPDDR5 12GB Mobile Memory
Micron LPDDR5 12GB Mobile Memory
system_plus
 
Samsung LPDDR5 12GB Mobile Memory
Samsung LPDDR5 12GB Mobile MemorySamsung LPDDR5 12GB Mobile Memory
Samsung LPDDR5 12GB Mobile Memory
system_plus
 
Safran Colibrys MS1010 and MEMSIC MXA2500M High-End Accelerometers
Safran Colibrys MS1010 and MEMSIC MXA2500M High-End AccelerometersSafran Colibrys MS1010 and MEMSIC MXA2500M High-End Accelerometers
Safran Colibrys MS1010 and MEMSIC MXA2500M High-End Accelerometers
system_plus
 
Sensonor STIM318 Inertial Measurement Unit (IMU)
Sensonor STIM318 Inertial Measurement Unit (IMU)Sensonor STIM318 Inertial Measurement Unit (IMU)
Sensonor STIM318 Inertial Measurement Unit (IMU)
system_plus
 
Hamamatsu Photodiode and Laser in Livox’s Horizon LiDAR
Hamamatsu Photodiode and Laser in Livox’s Horizon LiDARHamamatsu Photodiode and Laser in Livox’s Horizon LiDAR
Hamamatsu Photodiode and Laser in Livox’s Horizon LiDAR
system_plus
 
Everspin EMD3D256M STTMRAM Memory
Everspin EMD3D256M STTMRAM MemoryEverspin EMD3D256M STTMRAM Memory
Everspin EMD3D256M STTMRAM Memory
system_plus
 
Spectral Engines Nirone Sensor X
Spectral Engines Nirone Sensor XSpectral Engines Nirone Sensor X
Spectral Engines Nirone Sensor X
system_plus
 
Mediatek Autus R10 (MT2706) 77/79 GHz eWLB/AiP Radar Chipset
Mediatek Autus R10 (MT2706) 77/79 GHz eWLB/AiP Radar ChipsetMediatek Autus R10 (MT2706) 77/79 GHz eWLB/AiP Radar Chipset
Mediatek Autus R10 (MT2706) 77/79 GHz eWLB/AiP Radar Chipset
system_plus
 
Goodix’s Ultra-Thin Optical In-Display Fingerprint
Goodix’s Ultra-Thin Optical In-Display FingerprintGoodix’s Ultra-Thin Optical In-Display Fingerprint
Goodix’s Ultra-Thin Optical In-Display Fingerprint
system_plus
 

More from system_plus (20)

SP20569 - IRay T3S Thermal Camera for Smartphone
SP20569 - IRay T3S Thermal Camera for SmartphoneSP20569 - IRay T3S Thermal Camera for Smartphone
SP20569 - IRay T3S Thermal Camera for Smartphone
 
RF Front-End Module Comparison 2021 – Vol. 2 – Focus on 5G Chipset
RF Front-End Module Comparison 2021 – Vol. 2 – Focus on 5G ChipsetRF Front-End Module Comparison 2021 – Vol. 2 – Focus on 5G Chipset
RF Front-End Module Comparison 2021 – Vol. 2 – Focus on 5G Chipset
 
RF Front-End Module Comparison 2021 – Vol. 1 – Focus on Apple
RF Front-End Module Comparison 2021 – Vol. 1 – Focus on AppleRF Front-End Module Comparison 2021 – Vol. 1 – Focus on Apple
RF Front-End Module Comparison 2021 – Vol. 1 – Focus on Apple
 
Apple iPhone 12 series mmWave 5G Chipset and Antenna
Apple iPhone 12 series mmWave 5G Chipset and AntennaApple iPhone 12 series mmWave 5G Chipset and Antenna
Apple iPhone 12 series mmWave 5G Chipset and Antenna
 
NVIDIA A100 ampere GPU
NVIDIA A100 ampere GPUNVIDIA A100 ampere GPU
NVIDIA A100 ampere GPU
 
InnoLight’s 400G QSFP-DD Optical Transceiver
InnoLight’s 400G QSFP-DD Optical TransceiverInnoLight’s 400G QSFP-DD Optical Transceiver
InnoLight’s 400G QSFP-DD Optical Transceiver
 
EPC2152 half bridge Monolithic GaN IC
EPC2152 half bridge Monolithic GaN ICEPC2152 half bridge Monolithic GaN IC
EPC2152 half bridge Monolithic GaN IC
 
Microsoft - Holographic Lens from Hololens 2
Microsoft - Holographic Lens from Hololens 2Microsoft - Holographic Lens from Hololens 2
Microsoft - Holographic Lens from Hololens 2
 
ams’ NanEye Mini Camera
ams’ NanEye Mini Cameraams’ NanEye Mini Camera
ams’ NanEye Mini Camera
 
Axis P1375-E Network Camera
Axis P1375-E Network CameraAxis P1375-E Network Camera
Axis P1375-E Network Camera
 
Hikvision Intelligent Thermal Network Camera (DS-2TD2166-15 V1)
Hikvision Intelligent Thermal Network Camera (DS-2TD2166-15 V1)Hikvision Intelligent Thermal Network Camera (DS-2TD2166-15 V1)
Hikvision Intelligent Thermal Network Camera (DS-2TD2166-15 V1)
 
Micron LPDDR5 12GB Mobile Memory
Micron LPDDR5 12GB Mobile MemoryMicron LPDDR5 12GB Mobile Memory
Micron LPDDR5 12GB Mobile Memory
 
Samsung LPDDR5 12GB Mobile Memory
Samsung LPDDR5 12GB Mobile MemorySamsung LPDDR5 12GB Mobile Memory
Samsung LPDDR5 12GB Mobile Memory
 
Safran Colibrys MS1010 and MEMSIC MXA2500M High-End Accelerometers
Safran Colibrys MS1010 and MEMSIC MXA2500M High-End AccelerometersSafran Colibrys MS1010 and MEMSIC MXA2500M High-End Accelerometers
Safran Colibrys MS1010 and MEMSIC MXA2500M High-End Accelerometers
 
Sensonor STIM318 Inertial Measurement Unit (IMU)
Sensonor STIM318 Inertial Measurement Unit (IMU)Sensonor STIM318 Inertial Measurement Unit (IMU)
Sensonor STIM318 Inertial Measurement Unit (IMU)
 
Hamamatsu Photodiode and Laser in Livox’s Horizon LiDAR
Hamamatsu Photodiode and Laser in Livox’s Horizon LiDARHamamatsu Photodiode and Laser in Livox’s Horizon LiDAR
Hamamatsu Photodiode and Laser in Livox’s Horizon LiDAR
 
Everspin EMD3D256M STTMRAM Memory
Everspin EMD3D256M STTMRAM MemoryEverspin EMD3D256M STTMRAM Memory
Everspin EMD3D256M STTMRAM Memory
 
Spectral Engines Nirone Sensor X
Spectral Engines Nirone Sensor XSpectral Engines Nirone Sensor X
Spectral Engines Nirone Sensor X
 
Mediatek Autus R10 (MT2706) 77/79 GHz eWLB/AiP Radar Chipset
Mediatek Autus R10 (MT2706) 77/79 GHz eWLB/AiP Radar ChipsetMediatek Autus R10 (MT2706) 77/79 GHz eWLB/AiP Radar Chipset
Mediatek Autus R10 (MT2706) 77/79 GHz eWLB/AiP Radar Chipset
 
Goodix’s Ultra-Thin Optical In-Display Fingerprint
Goodix’s Ultra-Thin Optical In-Display FingerprintGoodix’s Ultra-Thin Optical In-Display Fingerprint
Goodix’s Ultra-Thin Optical In-Display Fingerprint
 

Recently uploaded

Christine's Supplier Sourcing Presentaion.pptx
Christine's Supplier Sourcing Presentaion.pptxChristine's Supplier Sourcing Presentaion.pptx
Christine's Supplier Sourcing Presentaion.pptx
christinelarrosa
 
Dandelion Hashtable: beyond billion requests per second on a commodity server
Dandelion Hashtable: beyond billion requests per second on a commodity serverDandelion Hashtable: beyond billion requests per second on a commodity server
Dandelion Hashtable: beyond billion requests per second on a commodity server
Antonios Katsarakis
 
A Deep Dive into ScyllaDB's Architecture
A Deep Dive into ScyllaDB's ArchitectureA Deep Dive into ScyllaDB's Architecture
A Deep Dive into ScyllaDB's Architecture
ScyllaDB
 
Mutation Testing for Task-Oriented Chatbots
Mutation Testing for Task-Oriented ChatbotsMutation Testing for Task-Oriented Chatbots
Mutation Testing for Task-Oriented Chatbots
Pablo Gómez Abajo
 
"NATO Hackathon Winner: AI-Powered Drug Search", Taras Kloba
"NATO Hackathon Winner: AI-Powered Drug Search",  Taras Kloba"NATO Hackathon Winner: AI-Powered Drug Search",  Taras Kloba
"NATO Hackathon Winner: AI-Powered Drug Search", Taras Kloba
Fwdays
 
Astute Business Solutions | Oracle Cloud Partner |
Astute Business Solutions | Oracle Cloud Partner |Astute Business Solutions | Oracle Cloud Partner |
Astute Business Solutions | Oracle Cloud Partner |
AstuteBusiness
 
[OReilly Superstream] Occupy the Space: A grassroots guide to engineering (an...
[OReilly Superstream] Occupy the Space: A grassroots guide to engineering (an...[OReilly Superstream] Occupy the Space: A grassroots guide to engineering (an...
[OReilly Superstream] Occupy the Space: A grassroots guide to engineering (an...
Jason Yip
 
"Scaling RAG Applications to serve millions of users", Kevin Goedecke
"Scaling RAG Applications to serve millions of users",  Kevin Goedecke"Scaling RAG Applications to serve millions of users",  Kevin Goedecke
"Scaling RAG Applications to serve millions of users", Kevin Goedecke
Fwdays
 
Northern Engraving | Nameplate Manufacturing Process - 2024
Northern Engraving | Nameplate Manufacturing Process - 2024Northern Engraving | Nameplate Manufacturing Process - 2024
Northern Engraving | Nameplate Manufacturing Process - 2024
Northern Engraving
 
Introducing BoxLang : A new JVM language for productivity and modularity!
Introducing BoxLang : A new JVM language for productivity and modularity!Introducing BoxLang : A new JVM language for productivity and modularity!
Introducing BoxLang : A new JVM language for productivity and modularity!
Ortus Solutions, Corp
 
Essentials of Automations: Exploring Attributes & Automation Parameters
Essentials of Automations: Exploring Attributes & Automation ParametersEssentials of Automations: Exploring Attributes & Automation Parameters
Essentials of Automations: Exploring Attributes & Automation Parameters
Safe Software
 
The Microsoft 365 Migration Tutorial For Beginner.pptx
The Microsoft 365 Migration Tutorial For Beginner.pptxThe Microsoft 365 Migration Tutorial For Beginner.pptx
The Microsoft 365 Migration Tutorial For Beginner.pptx
operationspcvita
 
Containers & AI - Beauty and the Beast!?!
Containers & AI - Beauty and the Beast!?!Containers & AI - Beauty and the Beast!?!
Containers & AI - Beauty and the Beast!?!
Tobias Schneck
 
Lee Barnes - Path to Becoming an Effective Test Automation Engineer.pdf
Lee Barnes - Path to Becoming an Effective Test Automation Engineer.pdfLee Barnes - Path to Becoming an Effective Test Automation Engineer.pdf
Lee Barnes - Path to Becoming an Effective Test Automation Engineer.pdf
leebarnesutopia
 
Demystifying Knowledge Management through Storytelling
Demystifying Knowledge Management through StorytellingDemystifying Knowledge Management through Storytelling
Demystifying Knowledge Management through Storytelling
Enterprise Knowledge
 
MySQL InnoDB Storage Engine: Deep Dive - Mydbops
MySQL InnoDB Storage Engine: Deep Dive - MydbopsMySQL InnoDB Storage Engine: Deep Dive - Mydbops
MySQL InnoDB Storage Engine: Deep Dive - Mydbops
Mydbops
 
GraphRAG for LifeSciences Hands-On with the Clinical Knowledge Graph
GraphRAG for LifeSciences Hands-On with the Clinical Knowledge GraphGraphRAG for LifeSciences Hands-On with the Clinical Knowledge Graph
GraphRAG for LifeSciences Hands-On with the Clinical Knowledge Graph
Neo4j
 
What is an RPA CoE? Session 1 – CoE Vision
What is an RPA CoE?  Session 1 – CoE VisionWhat is an RPA CoE?  Session 1 – CoE Vision
What is an RPA CoE? Session 1 – CoE Vision
DianaGray10
 
PRODUCT LISTING OPTIMIZATION PRESENTATION.pptx
PRODUCT LISTING OPTIMIZATION PRESENTATION.pptxPRODUCT LISTING OPTIMIZATION PRESENTATION.pptx
PRODUCT LISTING OPTIMIZATION PRESENTATION.pptx
christinelarrosa
 
Apps Break Data
Apps Break DataApps Break Data
Apps Break Data
Ivo Velitchkov
 

Recently uploaded (20)

Christine's Supplier Sourcing Presentaion.pptx
Christine's Supplier Sourcing Presentaion.pptxChristine's Supplier Sourcing Presentaion.pptx
Christine's Supplier Sourcing Presentaion.pptx
 
Dandelion Hashtable: beyond billion requests per second on a commodity server
Dandelion Hashtable: beyond billion requests per second on a commodity serverDandelion Hashtable: beyond billion requests per second on a commodity server
Dandelion Hashtable: beyond billion requests per second on a commodity server
 
A Deep Dive into ScyllaDB's Architecture
A Deep Dive into ScyllaDB's ArchitectureA Deep Dive into ScyllaDB's Architecture
A Deep Dive into ScyllaDB's Architecture
 
Mutation Testing for Task-Oriented Chatbots
Mutation Testing for Task-Oriented ChatbotsMutation Testing for Task-Oriented Chatbots
Mutation Testing for Task-Oriented Chatbots
 
"NATO Hackathon Winner: AI-Powered Drug Search", Taras Kloba
"NATO Hackathon Winner: AI-Powered Drug Search",  Taras Kloba"NATO Hackathon Winner: AI-Powered Drug Search",  Taras Kloba
"NATO Hackathon Winner: AI-Powered Drug Search", Taras Kloba
 
Astute Business Solutions | Oracle Cloud Partner |
Astute Business Solutions | Oracle Cloud Partner |Astute Business Solutions | Oracle Cloud Partner |
Astute Business Solutions | Oracle Cloud Partner |
 
[OReilly Superstream] Occupy the Space: A grassroots guide to engineering (an...
[OReilly Superstream] Occupy the Space: A grassroots guide to engineering (an...[OReilly Superstream] Occupy the Space: A grassroots guide to engineering (an...
[OReilly Superstream] Occupy the Space: A grassroots guide to engineering (an...
 
"Scaling RAG Applications to serve millions of users", Kevin Goedecke
"Scaling RAG Applications to serve millions of users",  Kevin Goedecke"Scaling RAG Applications to serve millions of users",  Kevin Goedecke
"Scaling RAG Applications to serve millions of users", Kevin Goedecke
 
Northern Engraving | Nameplate Manufacturing Process - 2024
Northern Engraving | Nameplate Manufacturing Process - 2024Northern Engraving | Nameplate Manufacturing Process - 2024
Northern Engraving | Nameplate Manufacturing Process - 2024
 
Introducing BoxLang : A new JVM language for productivity and modularity!
Introducing BoxLang : A new JVM language for productivity and modularity!Introducing BoxLang : A new JVM language for productivity and modularity!
Introducing BoxLang : A new JVM language for productivity and modularity!
 
Essentials of Automations: Exploring Attributes & Automation Parameters
Essentials of Automations: Exploring Attributes & Automation ParametersEssentials of Automations: Exploring Attributes & Automation Parameters
Essentials of Automations: Exploring Attributes & Automation Parameters
 
The Microsoft 365 Migration Tutorial For Beginner.pptx
The Microsoft 365 Migration Tutorial For Beginner.pptxThe Microsoft 365 Migration Tutorial For Beginner.pptx
The Microsoft 365 Migration Tutorial For Beginner.pptx
 
Containers & AI - Beauty and the Beast!?!
Containers & AI - Beauty and the Beast!?!Containers & AI - Beauty and the Beast!?!
Containers & AI - Beauty and the Beast!?!
 
Lee Barnes - Path to Becoming an Effective Test Automation Engineer.pdf
Lee Barnes - Path to Becoming an Effective Test Automation Engineer.pdfLee Barnes - Path to Becoming an Effective Test Automation Engineer.pdf
Lee Barnes - Path to Becoming an Effective Test Automation Engineer.pdf
 
Demystifying Knowledge Management through Storytelling
Demystifying Knowledge Management through StorytellingDemystifying Knowledge Management through Storytelling
Demystifying Knowledge Management through Storytelling
 
MySQL InnoDB Storage Engine: Deep Dive - Mydbops
MySQL InnoDB Storage Engine: Deep Dive - MydbopsMySQL InnoDB Storage Engine: Deep Dive - Mydbops
MySQL InnoDB Storage Engine: Deep Dive - Mydbops
 
GraphRAG for LifeSciences Hands-On with the Clinical Knowledge Graph
GraphRAG for LifeSciences Hands-On with the Clinical Knowledge GraphGraphRAG for LifeSciences Hands-On with the Clinical Knowledge Graph
GraphRAG for LifeSciences Hands-On with the Clinical Knowledge Graph
 
What is an RPA CoE? Session 1 – CoE Vision
What is an RPA CoE?  Session 1 – CoE VisionWhat is an RPA CoE?  Session 1 – CoE Vision
What is an RPA CoE? Session 1 – CoE Vision
 
PRODUCT LISTING OPTIMIZATION PRESENTATION.pptx
PRODUCT LISTING OPTIMIZATION PRESENTATION.pptxPRODUCT LISTING OPTIMIZATION PRESENTATION.pptx
PRODUCT LISTING OPTIMIZATION PRESENTATION.pptx
 
Apps Break Data
Apps Break DataApps Break Data
Apps Break Data
 

Rohm SiC MOSFET Gen3 Trench Design Family

  • 1. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 1 22 Bd Benoni Goullin 44200 NANTES - FRANCE +33 2 40 18 09 16 info@systemplus.fr www.systemplus.fr Rohm SiC MOSFET Gen 3 Trench Design Family POWER report by Amine ALLOUCHE & Elena BARBARINI August 2018 – sample REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT
  • 2. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 2 Table of Contents Introduction 4 o Executive Summary o Reverse Costing Methodology o Glossary o SiC Power Device Market Company Profile 13 o Rohm o Portfolio o Supply Chain Physical Analysis 20 o Summary of the Physical Analysis 650V MOSFETs : SCT3120AL  MOSFET Die View & Dimensions  MOSFET Delayering & main Blocs  MOSFET Die Process  MOSFET Die Cross-Section  MOSFET Die Process Characteristic o 1200V MOSFETs : BSM180D12P3C007  MOSFET Die View & Dimensions  MOSFET Delayering & main Blocs  MOSFET Die Process  MOSFET Die Cross-Section  MOSFET Die Process Characteristic Manufacturing Process 65 o MOSFET Die Front-End Process o MOSFET Fabrication Unit o Packaging Process & Fabrication unit Cost Analysis 68 o Summary of the cost analysis o Yields Explanation & Hypotheses o 650V MOSFETs : SCT3120AL  MOSFET Die Front-End Cost  MOSFET Die Probe Test, Thinning & Dicing  MOSFET Die Wafer Cost  MOSFET Die Cost  Assembled Components Cost  Component Cost o 1200V MOSFETs : BSM180D12P3C007  MOSFET Die Front-End Cost  MOSFET Die Probe Test, Thinning & Dicing  MOSFET Die Wafer Cost  MOSFET Die Cost Selling Price SCT3120AL 86 Comparison 89 o ROHM’s 3G SiC Trench 650V and 1200V MOSFETs o ROHM’s Gen3 vs Gen2 SiC MOSFET o ROHM vs Infineon trench design Feedback 95 System Plus Consulting services 97
  • 3. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 3 Overview / Introduction o Executive Summary o Reverse Costing Methodology o Glossary Company Profile & Supply Chain Physical Analysis Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus Executive Summary The market of SiC devices is promising, with a compound annual growth rate (CAGR) of 31% from 2017 - 2021. This will increase to 44% to 2022 due to growth among automotive and industrial applications. In total, the SiC market will exceed $1.5B in 2023. Rohm is the second main actor in SiC MOSFET discrete and modules and it proposes a wide range of devices from 650V up to 1700V. After just seven years form its first SiC commercial product, Rohm launched its first trench sic mosfet, being the first player to be in production with this type of technology. This product family is based on its specific double trench design, the gate trench and the source trench. This design allows a reduction of almost 50% of the Rdson respect to a planar SiC device and an increase of current density of almost five times respect to Si IGBT with the same voltage. The Gen 3 design is proposed for devices with 650V and 1200V on discrete or module packaging. The report goes into depth in its analysis of the Gen 3 trench Mosfets at 650V and 1200V and proposes optical and SEM images of the complex trench SiC structure. It also includes production cost analysis of the SCT3120AL discrete device and of the MOSFET die of the BSM180D12P3C007 module. The report presents a comparison between 650V and 1200V Gen3 technology devices and Gen3 and Gen2 Rohm’s SiC MOSFETs.
  • 4. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 4 Overview / Introduction Company Profile & Supply Chain o ROHM o SiC Portfolio o Supply Chain Physical Analysis Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus ROHM 3rd Generation SiC Trench MOSFETs  Minimal reverse recovery behavior of the parasitic diode  Compared to 2nd generation SiC-MOSFET: * ON resistance reduced by 50% * For same-size chip, 35% lower input capacitance (Ciss)
  • 5. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 5 Overview / Introduction Company Profile & Supply Chain Physical Analysis o SCT3120AL o Package o Die design o Die Cross section o BSM180D12P3C007 o Package o Die design o Die Cross section Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus Datasheet
  • 6. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 6 Overview / Introduction Company Profile & Supply Chain Physical Analysis o SCT3120AL o Package o Die design o Die Cross section o BSM180D12P3C007 o Package o Die design o Die Cross section Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus Package opening Gate Wire Bonding: o 1 Al wire. o Diameter: xxx µm o Medium length: xxx mm Source Wire Bonding: o 1 Al wire o Diameter: xxx µm o Medium length: xxx mm Package opening ©2018 by System Plus Consulting Wire bonding ©2018 by System Plus Consulting Source pad
  • 7. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 7 Overview / Introduction Company Profile & Supply Chain Physical Analysis o SCT3120AL o Package o Die design o Die Cross section o BSM180D12P3C007 o Package o Die design o Die Cross section Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus Package Cross-Section Package cross section ©2018 by System Plus Consulting The packaging is standard plastic molding.
  • 8. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 8 Overview / Introduction Company Profile & Supply Chain Physical Analysis o SCT3120AL o Package o Die design o Die Cross section o BSM180D12P3C007 o Package o Die design o Die Cross section Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus MOSFET die Dimensions MOSFET : Optical view xxxmm o Die dimensions: xxx mm² (xxx x xxx) o There is no marking on the die xxx mm
  • 9. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 9 Overview / Introduction Company Profile & Supply Chain Physical Analysis o SCT3120AL o Package o Die design o Die Cross section o BSM180D12P3C007 o Package o Die design o Die Cross section Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus Guard ring
  • 10. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 10 Overview / Introduction Company Profile & Supply Chain Physical Analysis o SCT3120AL o Package o Die design o Die Cross section o BSM180D12P3C007 o Package o Die design o Die Cross section Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus Transistor – Delayering Transistor after delayering – SEM View Transistor after delayering – SEM View
  • 11. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 11 Overview / Introduction Company Profile & Supply Chain Physical Analysis o SCT3120AL o Package o Die design o Die Cross section o BSM180D12P3C007 o Package o Die design o Die Cross section Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus Die - Cross-Section • Die thickness:xxx µm Guard ring : Cross-Section SEM view ©2018 by System Plus Consulting
  • 12. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 12 Overview / Introduction Company Profile & Supply Chain Physical Analysis o SCT3120AL o Package o Die design o Die Cross section o BSM180D12P3C007 o Package o Die design o Die Cross section Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus Gate - Cross-Section Gate : Cross-Section SEM view
  • 13. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 13 Overview / Introduction Company Profile & Supply Chain Physical Analysis o SCT3120AL o Package o Die design o Die Cross section o BSM180D12P3C007 o Package o Die design o Die Cross section Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus BSM180D12P3C007 Characteristics
  • 14. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 14 Overview / Introduction Company Profile & Supply Chain Physical Analysis o SCT3120AL o Package o Die design o Die Cross section o BSM180D12P3C007 o Package o Die design o Die Cross section Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus MOSFET Dimensions • Die dimensions:xxxmm² (xxxmm x xxxmm) • Thickness: xxxµm • There is no marking on the die. MOSFET : Optical view xxxmm xxx mm
  • 15. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 15 Overview / Introduction Company Profile & Supply Chain Physical Analysis o SCT3120AL o Package o Die design o Die Cross section o BSM180D12P3C007 o Package o Die design o Die Cross section Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus Gate - Cross-Section Gate : Cross-Section SEM view
  • 16. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 16 Overview / Introduction Company Profile & Supply Chain Physical Analysis Manufacturing Process Flow Cost Analysis o Synthesis o SCT3120AL o MOSFET Wafer Cost o MOSFET Die Cost o Packaging Cost o Component Cost o BSM180D12P3C007 o MOSFET Wafer Cost o MOSFET Die Cost Selling Price Analysis Comparison Feedbacks About System Plus SCT3120AL (650V) MOSFET Front-End Cost The front-end cost ranges from $xxx to $xxx according to yield variations. The main part of the wafer cost is due to the xxx (xxx%). The xxx represent a large part of consumable and equipment cost
  • 17. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 17 Overview / Introduction Company Profile & Supply Chain Physical Analysis Manufacturing Process Flow Cost Analysis o Synthesis o SCT3120AL o MOSFET Wafer Cost o MOSFET Die Cost o Packaging Cost o Component Cost o BSM180D12P3C007 o MOSFET Wafer Cost o MOSFET Die Cost Selling Price Analysis Comparison Feedbacks About System Plus SCT3120AL (650V) MOSFET Die Cost The MOSFET die cost ranges from $xxx to $xxx according to yield variations. The xxxx represents xxx% of the component cost, medium yield.
  • 18. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 18 Overview / Introduction Company Profile & Supply Chain Physical Analysis Manufacturing Process Flow Cost Analysis o Synthesis o SCT3120AL o MOSFET Wafer Cost o MOSFET Die Cost o Packaging Cost o Component Cost o BSM180D12P3C007 o MOSFET Wafer Cost o MOSFET Die Cost Selling Price Analysis Comparison Feedbacks About System Plus SCT3120AL (650V) Component Cost The component cost ranges from $xxx to $xxx according to yield variations. The MOSFET die xxx represents xxx% of the component cost. The xxx represents xxxx% of the component cost. Final test and yield losses account for xxx% of the component cost.
  • 19. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 19 Overview / Introduction Company Profile & Supply Chain Physical Analysis Manufacturing Process Flow Cost Analysis Selling Price Analysis o SCT3120AL Comparison Feedbacks About System Plus Estimated Manufacturer Price The component manufacturing cost ranges from $xx to $xxx according to yield variations. With a gross margin estimated to 30%, the component selling price ranges from $xxx to $xxx according to yield variations.
  • 20. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 20 Overview / Introduction Company Profile & Supply Chain Physical Analysis Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison o Rohm’s 650V and 1200V o Rohm Gen3 vs Gen2 o Rohm vs Infineon trench Feedbacks About System Plus Comparison between ROHM’s 650V and 1200V Parameter 650 V (SCT3120AL) 1200 V (BSM180D12P3C007) Die area (mm²) xxx xxx Current (Amps at 25°C) xxx xxx Current density (A/mm²) xxx xxx Die thickness (µm) xxx xxx Ring (mm) xxx xxx Gate oxide thickness (µm) xxx xxx Trench depth (µm) xxx xxx Polysilicon gate thickness (µm) xxx xxx Epitaxy (µm) xxx xxx Polyimide (µm) xxx xxx Pitch (µm) xxx xxx Passivation xxx xxx Al contact thickness (µm) xxx xxx Polysilicon Gate width (µm) xxx xxx
  • 21. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 21 Overview / Introduction Company Profile & Supply Chain Physical Analysis Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison o Rohm’s 650V and 1200V o Rohm Gen3 vs Gen2 o Rohm vs Infineon trench Feedbacks About System Plus Comparison between ROHM’s 650V and 1200V MOSFET Current density Pitch Wafer thickness Epitaxy Wafer cost A cost 650V Gen 3 xxx xxx xxx xxx xxx xxx 1200V gen 3 xxx xxx xxx xxx xxx xxx 1200V gen 3650V Gen 3
  • 22. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 22 Overview / Introduction Company Profile & Supply Chain Physical Analysis Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus o Company services o Related reports o Contact o Legal REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING Related Reports REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING POWER & COMPOUNDS • Cree 1200V SiC MOSFET Module • 1200V SiC MOSFET vs Silicon IGBT: Technology and cost comparison • ROHM 1200V Trench SiC MOSFET • Infineon CooliR²Die™ Power Module • Toyota Prius Power Modules • Littelfuse Silicon Carbide MOSFET LSIC1MO120E0080: 1200V 25A 80mOhms • 1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon • Wolfspeed C2M 1200V SiC MOSFET C2M0025120D • Tesla Model 3 Inverter with SiC Power Module from STMicroelectronics MARKET AND TECHNOLOGY REPORTS - YOLE DÉVELOPPEMENT Power Electronics & Compound Semiconductors • Power SiC 2018: Materials, Devices, and Applications • Power Module Packaging 2018: Material Market and Technology Trends
  • 23. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 23 COMPANY SERVICES
  • 24. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 24 Overview / Introduction Company Profile & Supply Chain Physical Analysis Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus o Company services o Related reports o Contact o Legal Business Models Fields of Expertise Custom Analyses (>130 analyses per year) Reports (>40 reports per year) Costing Tools Trainings
  • 25. ©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 25 Overview / Introduction Company Profile & Supply Chain Physical Analysis Manufacturing Process Flow Cost Analysis Selling Price Analysis Comparison Feedbacks About System Plus o Company services o Related reports o Contact o Legal Contact www.systemplus.fr NANTES Headquarter FRANKFURT/MAIN Europe Sales Office LYON YOLE HQ TOKYO YOLE KK GREATER CHINA YOLE PHOENIX YOLE Inc. KOREA YOLE Headquarters 22 Boulevard Benoni Goullin 44200 Nantes FRANCE +33 2 40 18 09 16 sales@systemplus.fr Europe Sales Office Lizzie LEVENEZ Frankfurt am Main GERMANY +49 151 23 54 41 82 llevenez@systemplus.fr Asia Sales Office Takashi ONOZAWA Tokyo JAPAN onozawa@yole.fr Mavis WANG GREATER CHINA wang@yole.fr America Sales Office Steve LAFERRIERE Eastern USA laferriere@yole.fr Troy BLANCHETTE Western USA blanchette@yole.fr
  • 26. ORDER FORM Please process my order for “Rohm SiC MOSFET Gen3 Trench Design Family” Reverse Costing® – Structure, Process & Cost Report Ref: SP18428  Full Structure, Process & Cost Report : EUR 3,490*  Annual Subscription offers possible from 3 reports, including this report as the first of the year. Contact us for more information. SHIP TO Name (Mr/Ms/Dr/Pr): ............................................................. Job Title: ……............................................................................. Company: …............................................................................. Address: ……............................................................................. City: ………………………………… State: .......................................... Postcode/Zip: .......................................................................... Country: ……............................................................................ VAT ID Number for EU members: .......................................... Tel: ………………......................................................................... Email: ..................................................................................... Date: ...................................................................................... Signature: .............................................................................. BILLING CONTACT First Name : ............................................................................ Last Name: ……....................................................................... Email: ….................................................................................. Phone: …….............................................................................. PAYMENT By credit card: Number: |__|__|__|__| |__|__|__|__| |__|__|__|__| |__|__|__|__| Expiration date: |__|__|/|__|__| Card Verification Value: |__|__|__| By bank transfer: HSBC - CAE- Le Terminal -2 rue du Charron - 44800 St Herblain France BIC code: CCFRFRPP • In EUR Bank code : 30056 - Branch code : 00955 - Account : 09550003234 IBAN: FR76 3005 6009 5509 5500 0323 439 • In USD Bank code : 30056 - Branch code : 00955 - Account : 09550003247 IBAN: FR76 3005 6009 5509 5500 0324 797 Return order by: FAX: +33 2 53 55 10 59 MAIL: SYSTEM PLUS CONSULTING 22, bd Benoni Goullin Nantes Biotech 44200 Nantes – France EMAIL: sales@systemplus.fr *For price in dollars please use the day’s exchange rate *All reports are delivered electronically in pdf format *For French customer, add 20 % for VAT *Our prices are subject to change. Please check our new releases and price changes on www.systemplus.fr. The present document is valid 6 months after its publishing date: August 2018 REVERSE COSTING® – STRUCTURE, PROCESS & COST REPORTROHM SIC MOSFET GEN3 TRENCH DESIGN FAMILY Each year System Plus Consulting releases a comprehensive collection of new reverse engineering and costing analyses in various domains. You can choose to buy over 12 months a set of 3, 4, 5, 7, 10 or 15 Reverse Costing® reports. Up to 47% discount! More than 60 reports released each year on the following topics (considered for 2018): • MEMS & Sensors: Accelerometer – Environment - Fingerprint - Gas - Gyroscope - IMU/Combo - Microphone - Optics - Oscillator - Pressure • Power: GaN - IGBT - MOSFET - Si Diode - SiC • Imaging: Camera - Spectrometer • LED and Laser: UV LED – VCSEL - White/blue LED • Packaging: 3D Packaging - Embedded - SIP - WLP • Integrated Circuits: IPD – Memories – PMIC - SoC • RF: FEM - Duplexer • Systems: Automotive - Consumer - Energy - Telecom ANNUAL SUBSCRIPTIONS
  • 27. 1. INTRODUCTION The present terms and conditions apply to the offers, sales and deliveries of services managed by System Plus Consulting except in the case of a particular written agreement. Buyer must note that placing an order means an agreement without any restriction with these terms and conditions. 2. PRICES Prices of the purchased services are those which are in force on the date the order is placed. Prices are in Euros and worked out without taxes. Consequently, the taxes and possible added costs agreed when the order is placed will be charged on these initial prices. System Plus Consulting may change its prices whenever the company thinks it necessary. However, the company commits itself in invoicing at the prices in force on the date the order is placed. 3. REBATES and DISCOUNTS The quoted prices already include the rebates and discounts that System Plus Consulting could have granted according to the number of orders placed by the Buyer, or other specific conditions. No discount is granted in case of early payment. 4. TERMS OF PAYMENT System Plus Consulting delivered services are to be paid within 30 days end of month by bank transfer except in the case of a particular written agreement. If the payment does not reach System Plus Consulting on the deadline, the Buyer has to pay System Plus Consulting a penalty for late payment the amount of which is three times the legal interest rate. The legal interest rate is the current one on the delivery date. This penalty is worked out on the unpaid invoice amount, starting from the invoice deadline. This penalty is sent without previous notice. When payment terms are over 30 days end of month, the Buyer has to pay a deposit which amount is 10% of the total invoice amount when placing his order. 5. OWNERSHIP System Plus Consulting remains sole owner of the delivered services until total payment of the invoice. 6. DELIVERIES The delivery schedule on the purchase order is given for information only and cannot be strictly guaranteed. Consequently any reasonable delay in the delivery of services will not allow the buyer to claim for damages or to cancel the order. 7. ENTRUSTED GOODS SHIPMENT The transport costs and risks are fully born by the Buyer. Should the customer wish to ensure the goods against lost or damage on the base of their real value, he must imperatively point it out to System Plus Consulting when the shipment takes place. Without any specific requirement, insurance terms for the return of goods will be the carrier current ones (reimbursement based on good weight instead of the real value). 8. FORCE MAJEURE System Plus Consulting responsibility will not be involved in non execution or late delivery of one of its duties described in the current terms and conditions if these are the result of a force majeure case. Therefore, the force majeure includes all external event unpredictable and irresistible as defined by the article 1148 of the French Code Civil? 9. CONFIDENTIALITY As a rule, all information handed by customers to system Plus Consulting are considered as strictly confidential. A non-disclosure agreement can be signed on demand. 10. RESPONSABILITY LIMITATION The Buyer is responsible for the use and interpretations he makes of the reports delivered by System Plus Consulting. Consequently, System Plus Consulting responsibility can in no case be called into question for any direct or indirect damage, financial or otherwise, that may result from the use of the results of our analysis or results obtained using one of our costing tools. 11. APPLICABLE LAW Any dispute that may arise about the interpretation or execution of the current terms and conditions shall be resolved applying the French law. It the dispute cannot be settled out-of-court, the competent Court will be the Tribunal de Commerce de Nantes. TERMS AND CONDITIONS OF SALES