Rohm SiC MOSFET Gen3 Trench Design Family

©2018 by System Plus Consulting | Rohm SiC MOSFET Gen 3 1
22 Bd Benoni Goullin
44200 NANTES - FRANCE +33 2 40 18 09 16 info@systemplus.fr www.systemplus.fr
Rohm SiC MOSFET Gen 3
Trench Design Family
POWER report by Amine ALLOUCHE & Elena BARBARINI
August 2018 – sample
REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT

Table of Contents
Introduction 4
o Executive Summary
o Reverse Costing Methodology
o Glossary
o SiC Power Device Market
Company Profile 13
o Rohm
o Portfolio
o Supply Chain
Physical Analysis 20
o Summary of the Physical Analysis
650V MOSFETs : SCT3120AL
 MOSFET Die View & Dimensions
 MOSFET Delayering & main Blocs
 MOSFET Die Process
 MOSFET Die Cross-Section
 MOSFET Die Process Characteristic
o 1200V MOSFETs : BSM180D12P3C007
 MOSFET Die View & Dimensions
 MOSFET Delayering & main Blocs
 MOSFET Die Process
 MOSFET Die Cross-Section
 MOSFET Die Process Characteristic
Manufacturing Process 65
o MOSFET Die Front-End Process
o MOSFET Fabrication Unit
o Packaging Process & Fabrication unit
Cost Analysis 68
o Summary of the cost analysis
o Yields Explanation & Hypotheses
o 650V MOSFETs : SCT3120AL
 MOSFET Die Front-End Cost
 MOSFET Die Probe Test, Thinning & Dicing
 MOSFET Die Wafer Cost
 MOSFET Die Cost
 Assembled Components Cost
 Component Cost
o 1200V MOSFETs : BSM180D12P3C007
 MOSFET Die Front-End Cost
 MOSFET Die Probe Test, Thinning & Dicing
 MOSFET Die Wafer Cost
 MOSFET Die Cost
Selling Price SCT3120AL 86
Comparison 89
o ROHM’s 3G SiC Trench 650V and 1200V MOSFETs
o ROHM’s Gen3 vs Gen2 SiC MOSFET
o ROHM vs Infineon trench design
Feedback 95
System Plus Consulting services 97

Overview / Introduction
o Executive Summary
o Reverse Costing
Methodology
o Glossary
Company Profile & Supply
Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedbacks
About System Plus
Executive Summary
The market of SiC devices is promising, with a compound annual growth rate (CAGR) of 31% from 2017 - 2021. This will increase to 44%
to 2022 due to growth among automotive and industrial applications. In total, the SiC market will exceed $1.5B in 2023.
Rohm is the second main actor in SiC MOSFET discrete and modules and it proposes a wide range of devices from 650V up to 1700V.
After just seven years form its first SiC commercial product, Rohm launched its first trench sic mosfet, being the first player to be in
production with this type of technology.
This product family is based on its specific double trench design, the gate trench and the source trench. This design allows a reduction of
almost 50% of the Rdson respect to a planar SiC device and an increase of current density of almost five times respect to Si IGBT with the
same voltage.
The Gen 3 design is proposed for devices with 650V and 1200V on discrete or module packaging.
The report goes into depth in its analysis of the Gen 3 trench Mosfets at 650V and 1200V and proposes optical and SEM images of the
complex trench SiC structure.
It also includes production cost analysis of the SCT3120AL discrete device and of the MOSFET die of the BSM180D12P3C007 module.
The report presents a comparison between 650V and 1200V Gen3 technology devices and Gen3 and Gen2 Rohm’s SiC MOSFETs.

Chain
o ROHM
o SiC Portfolio
o Supply Chain
Physical Analysis
Cost Analysis
Comparison
Feedbacks
About System Plus
ROHM 3rd Generation SiC Trench MOSFETs
 Minimal reverse recovery behavior of the parasitic
diode
 Compared to 2nd generation SiC-MOSFET:
* ON resistance reduced by 50%
* For same-size chip, 35% lower input capacitance
(Ciss)

Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Cost Analysis
Comparison
Feedbacks
About System Plus
Datasheet

Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Cost Analysis
Comparison
Feedbacks
About System Plus
Package opening
Gate Wire Bonding:
o 1 Al wire.
o Diameter: xxx µm
o Medium length: xxx mm
Source Wire Bonding:
o 1 Al wire
o Diameter: xxx µm
o Medium length: xxx mm
Package opening
©2018 by System Plus Consulting
Wire bonding
Source pad

Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Cost Analysis
Comparison
Feedbacks
About System Plus
Package Cross-Section
Package cross section
The packaging is standard plastic molding.

Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Cost Analysis
Comparison
Feedbacks
About System Plus
MOSFET die Dimensions
MOSFET : Optical view
xxxmm
o Die dimensions: xxx mm² (xxx x xxx)
o There is no marking on the die
xxx mm

Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Cost Analysis
Comparison
Feedbacks
About System Plus
Guard ring

Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Cost Analysis
Comparison
Feedbacks
About System Plus
Transistor – Delayering
Transistor after delayering – SEM View
Transistor after delayering – SEM View

Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Cost Analysis
Comparison
Feedbacks
About System Plus
Die - Cross-Section
• Die thickness:xxx µm
Guard ring : Cross-Section SEM view

Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Cost Analysis
Comparison
Feedbacks
About System Plus
Gate - Cross-Section
Gate : Cross-Section SEM view

Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Cost Analysis
Comparison
Feedbacks
About System Plus
BSM180D12P3C007 Characteristics

Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Cost Analysis
Comparison
Feedbacks
About System Plus
MOSFET Dimensions
• Die dimensions:xxxmm² (xxxmm x xxxmm)
• Thickness: xxxµm
• There is no marking on the die.
MOSFET : Optical view
xxxmm
xxx mm

Chain
Physical Analysis
o SCT3120AL
o Package
o Die design
o Die Cross section
o BSM180D12P3C007
o Package
o Die design
o Die Cross section
Cost Analysis
Comparison
Feedbacks
About System Plus
Gate - Cross-Section
Gate : Cross-Section SEM view

Chain
Physical Analysis
Cost Analysis
o Synthesis
o SCT3120AL
o MOSFET Wafer Cost
o MOSFET Die Cost
o Packaging Cost
o Component Cost
o BSM180D12P3C007
o MOSFET Wafer Cost
o MOSFET Die Cost
Comparison
Feedbacks
About System Plus
SCT3120AL (650V) MOSFET Front-End Cost
The front-end cost ranges from $xxx to $xxx according to
yield variations.
The main part of the wafer cost is due to the xxx (xxx%).
The xxx represent a large part of consumable and
equipment cost

Chain
Physical Analysis
Cost Analysis
o Synthesis
o SCT3120AL
o MOSFET Wafer Cost
o MOSFET Die Cost
o Packaging Cost
o Component Cost
o BSM180D12P3C007
o MOSFET Wafer Cost
o MOSFET Die Cost
Comparison
Feedbacks
About System Plus
SCT3120AL (650V) MOSFET Die Cost
The MOSFET die cost ranges from $xxx to $xxx according
to yield variations.
The xxxx represents xxx% of the component cost,
medium yield.

Chain
Physical Analysis
Cost Analysis
o Synthesis
o SCT3120AL
o MOSFET Wafer Cost
o MOSFET Die Cost
o Packaging Cost
o Component Cost
o BSM180D12P3C007
o MOSFET Wafer Cost
o MOSFET Die Cost
Comparison
Feedbacks
About System Plus
SCT3120AL (650V) Component Cost
The component cost ranges from $xxx to $xxx according
to yield variations.
The MOSFET die xxx represents xxx% of the component
cost.
The xxx represents xxxx% of the component cost.
Final test and yield losses account for xxx% of the
component cost.

Chain
Physical Analysis
Cost Analysis
o SCT3120AL
Comparison
Feedbacks
About System Plus
Estimated Manufacturer Price
The component manufacturing cost ranges
from $xx to $xxx according to yield variations.
With a gross margin estimated to 30%, the
component selling price ranges from $xxx to
$xxx according to yield variations.

Chain
Physical Analysis
Cost Analysis
Comparison
o Rohm’s 650V and 1200V
o Rohm Gen3 vs Gen2
o Rohm vs Infineon trench
Feedbacks
About System Plus
Comparison between ROHM’s 650V and 1200V
Parameter 650 V
(SCT3120AL)
1200 V
(BSM180D12P3C007)
Die area (mm²) xxx xxx
Current (Amps at 25°C) xxx xxx
Current density (A/mm²) xxx xxx
Die thickness (µm) xxx xxx
Ring (mm) xxx xxx
Gate oxide thickness (µm) xxx xxx
Trench depth (µm) xxx xxx
Polysilicon gate thickness (µm) xxx xxx
Epitaxy (µm) xxx xxx
Polyimide (µm) xxx xxx
Pitch (µm) xxx xxx
Passivation xxx xxx
Al contact thickness (µm) xxx xxx
Polysilicon Gate width (µm) xxx xxx

Chain
Physical Analysis
Cost Analysis
Comparison
o Rohm’s 650V and 1200V
o Rohm Gen3 vs Gen2
o Rohm vs Infineon trench
Feedbacks
About System Plus
Comparison between ROHM’s 650V and 1200V
MOSFET
Current
density
Pitch Wafer thickness Epitaxy Wafer cost A cost
650V Gen 3 xxx xxx xxx xxx xxx xxx
1200V gen 3 xxx xxx xxx xxx xxx xxx
1200V gen 3650V Gen 3

Chain
Physical Analysis
Cost Analysis
Comparison
Feedbacks
About System Plus
o Company services
o Related reports
o Contact
o Legal
REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING
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Comparison
Feedbacks
About System Plus
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Feedbacks
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