Discover the technological choices made by United Silicon Carbide Inc. (UnitedSiC) for its most advanced SiC JFET and its associated features
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/unitedsic-ujn1205k-1200v-sic-jfet/
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
The BSM180D12P3C007 offers a higher operating temperature (up to 150°C) in a 45mm x 122mm x 21mm package.
The report goes into depth in its analysis of the packaging and the components, with images of the complex trench SiC structure.
It also includes production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module.
More information on that report at http://www.i-micronews.com/reports.html
1200V Silicon IGBT vs SiC MOSFET Comparison 2018system_plus
Technology and cost analysis of thirteen silicon IGBTs and eight SiC MOSFETs from eight different manufacturers shows their potential.
More information on that report at: http://www.systemplus.fr/fr/reverse-costing-reports/1200v-silicon-igbt-vs-sic-mosfet-comparison-2018/
Qorvo QPF4006 39GHz GaN MMIC Front End Modulesystem_plus
The first MMIC FEM targeting 5G base stations and terminals using a 0.15µm GaN-on-SiC process.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/qorvo-qpf4006-39ghz-gan-mmic-front-end-module/
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...Yole Developpement
GaN market growth is fed by Lidar, wireless charging and fast charging solutions.
More information on : https://www.i-micronews.com/category-listing/product/power-gan-2018-epitaxy-devices-applications-and-technology-trends.html
This document provides a summary of a report by System Plus Consulting on Wolfspeed's 900V SiC MOSFET family. The report includes a technical and cost analysis of Wolfspeed's third generation C3M0280090D 900V 11.5A SiC MOSFET device, an overview of the C3M0120090D and C3M0065090D, and a cost evolution analysis over five years. It also compares the C3M family to previous generations of Cree SiC MOSFETs and provides a cost comparison to Infineon Si MOSFETs and GaN Systems GaN HEMTs.
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...Yole Developpement
Dive deep into the technology and cost of GaN-on-silicon HEMTs from EPC, Transphorm, GaN Systems, Panasonic and Texas Instruments.
More information on that report at https://www.i-micronews.com/report/product/gan-on-silicon-transistor-comparison-2018.html
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...Yole Developpement
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The CAS120M12BM2 from CREE Semiconductor is a power module of 2 transistors with a breakdown voltage of 1200V for a current of 138A (90°C), an ultra low on-resistance (13mΩ), a fast switching speed and a fast reverse recovery.
The CAS120M12BM2 integrates 12 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET dies with a current of 23A (90°C) for 10 sq mm, and 24x Z-Rec diode of 4.8 sq mm are integrated in the power module. The Z-Rec diode is a mix between a Schottky and junction barrier diode....
The 1st generation 1200V SiC MOSFET device from STMicroelectronics has good current density at a very competitive cost
The STC30N120 is the first generation 1200V SiC MOSFET device from STMicroelectronics. The device has a planar structure and a design that allows good electrical performance, such as high current density. Moreover, the supply chain and manufacturing choices lead to a very competitive cost.
The device is suitable for high power applications like motor drives, inverters, DC-DC converters and power supplies.
The STC30N120 integrates first generation high-voltage SiC power MOSFET dies in a dedicated discrete package.
The device is assumed to operate at very high temperature, up to 200°C, and to have an on-resistance of 90mΩ, with generally standard SiC manufacturing technology.
The report goes into depth in its analysis of the packaging and the components, with images of the complex planar SiC structure.
It also includes production cost analysis and detailed comparison with Rohm and Wolfspeed’s SiC MOSFETs and with 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.
For more information, please visit our website: http://www.i-micronews.com/reports.html
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
The BSM180D12P3C007 offers a higher operating temperature (up to 150°C) in a 45mm x 122mm x 21mm package.
The report goes into depth in its analysis of the packaging and the components, with images of the complex trench SiC structure.
It also includes production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module.
More information on that report at http://www.i-micronews.com/reports.html
1200V Silicon IGBT vs SiC MOSFET Comparison 2018system_plus
Technology and cost analysis of thirteen silicon IGBTs and eight SiC MOSFETs from eight different manufacturers shows their potential.
More information on that report at: http://www.systemplus.fr/fr/reverse-costing-reports/1200v-silicon-igbt-vs-sic-mosfet-comparison-2018/
Qorvo QPF4006 39GHz GaN MMIC Front End Modulesystem_plus
The first MMIC FEM targeting 5G base stations and terminals using a 0.15µm GaN-on-SiC process.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/qorvo-qpf4006-39ghz-gan-mmic-front-end-module/
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...Yole Developpement
GaN market growth is fed by Lidar, wireless charging and fast charging solutions.
More information on : https://www.i-micronews.com/category-listing/product/power-gan-2018-epitaxy-devices-applications-and-technology-trends.html
This document provides a summary of a report by System Plus Consulting on Wolfspeed's 900V SiC MOSFET family. The report includes a technical and cost analysis of Wolfspeed's third generation C3M0280090D 900V 11.5A SiC MOSFET device, an overview of the C3M0120090D and C3M0065090D, and a cost evolution analysis over five years. It also compares the C3M family to previous generations of Cree SiC MOSFETs and provides a cost comparison to Infineon Si MOSFETs and GaN Systems GaN HEMTs.
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...Yole Developpement
Dive deep into the technology and cost of GaN-on-silicon HEMTs from EPC, Transphorm, GaN Systems, Panasonic and Texas Instruments.
More information on that report at https://www.i-micronews.com/report/product/gan-on-silicon-transistor-comparison-2018.html
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...Yole Developpement
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The CAS120M12BM2 from CREE Semiconductor is a power module of 2 transistors with a breakdown voltage of 1200V for a current of 138A (90°C), an ultra low on-resistance (13mΩ), a fast switching speed and a fast reverse recovery.
The CAS120M12BM2 integrates 12 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET dies with a current of 23A (90°C) for 10 sq mm, and 24x Z-Rec diode of 4.8 sq mm are integrated in the power module. The Z-Rec diode is a mix between a Schottky and junction barrier diode....
The 1st generation 1200V SiC MOSFET device from STMicroelectronics has good current density at a very competitive cost
The STC30N120 is the first generation 1200V SiC MOSFET device from STMicroelectronics. The device has a planar structure and a design that allows good electrical performance, such as high current density. Moreover, the supply chain and manufacturing choices lead to a very competitive cost.
The device is suitable for high power applications like motor drives, inverters, DC-DC converters and power supplies.
The STC30N120 integrates first generation high-voltage SiC power MOSFET dies in a dedicated discrete package.
The device is assumed to operate at very high temperature, up to 200°C, and to have an on-resistance of 90mΩ, with generally standard SiC manufacturing technology.
The report goes into depth in its analysis of the packaging and the components, with images of the complex planar SiC structure.
It also includes production cost analysis and detailed comparison with Rohm and Wolfspeed’s SiC MOSFETs and with 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.
For more information, please visit our website: http://www.i-micronews.com/reports.html
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...system_plus
The document provides a teardown analysis of Infineon's 1200V 50A CoolSiC MOSFET module, including a profile of Infineon, physical analysis of the module components, a description of the manufacturing processes, a cost analysis, and comparisons to other SiC MOSFET solutions. Through physical analysis, the report reveals Infineon's innovative SiC MOSFET and Schottky diode design assets. Manufacturing process details and a cost analysis estimate the costs to produce the module.
2.5D heterogeneous and 3D wafer-level stacking are reshaping the packaging landscape.
More information on that report at https://www.i-micronews.com/advanced-packaging-report/product/p2-5d-3d-tsv-wafer-level-stacking-technology-market-updates-2019.html
Power GaN 2019: Epitaxy, Devices, Applications and Technology Trends - Yole D...Yole Developpement
First design-win for GaN HEMTs in the high-volume smartphone fast charging market.
More information on: https://www.i-micronews.com/products/power-gan-2019-epitaxy-devices-applications-technology-trends/
GaN and SiC for power electronics applications 2015 Report by Yole DeveloppementYole Developpement
The SiC market is expected to treble and GaN is expected to explode - if challenges are overcome
In 2014, the SiC chip business was worth more than $133M. As in previous years, power factor correction (PFC) and photovoltaics (PV) are still the leading applications.
SiC diodes represent more than 80% of the market. In 2020, diodes will remain the main contributor across various applications, including electric and hybrid electric vehicles (EV/HEV), PV, PFC, wind, Uninterruptible Power Supplies (UPS) and motor drives.
SiC transistors will grow in parallel with diodes, driven by PV inverters. Challenges must be overcome prior to the adoption of pure SiC solutions for EV power train inverters, which is nevertheless expected by 2020.
Including the growth in both diodes and transistors we expect the total SiC market to more than treble by 2020, reaching $436M...
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Invertersystem_plus
Multiple optimized packaging innovations for this automotive power module from Vitesco Technologies.
More : https://www.systemplus.fr/reverse-costing-reports/vitesco-technologies-power-module-in-jaguar-i-pace-inverter/
Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...Yole Developpement
Rohm SCH2080KE SiC Transistor
2nd Generation SiC MOSFET with SiC-SBD
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The SCH2080KE from ROHM Semiconductor is a 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET. With a breakdown voltage of 1200V for a current of 28A (100°C), the SCH2080KE offers a very low on-resistance (80mΩ), a fast switching speed and a fast reverse recovery.
This MOSFET is already integrated in power modules by Danfoss for PV inverters and in train engine modules co-developed with Alstom. Rohm SiC MOSFET offers a second source to the CREE SiC MOSFET.
System Plus Consulting is publishing a reverse costing report on the SCH2080KE. Based on a complete teardown analysis, the report provides an estimation of the production cost of the SCH2080KE package, SiC MOSFET Transistor and Schottky Barrier Diode.
More information on that report at http://www.i-micronews.com/reports/Rohm-SCH2080KE-SiC-Transistor-2nd-Generation-SiC-MOSFET-SiC/12/432/
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...system_plus
The first 80V half-bridge GaN power stage from TI, with innovative packaging.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/texas-instruments-lmg5200-gan-power-stage/
Power SiC 2018: Materials, Devices and Applications 2018 Report by Yole Devel...Yole Developpement
Automotive is putting SiC on the road. Is the supply chain ready?
More information on that report at : https://www.i-micronews.com/category-listing/product/power-sic-2018-materials-devices-and-applications.html
System-in-Package Technology and Market Trends 2020 report by Yole DéveloppementYole Developpement
How is System-in-Package capably meeting the stringent requirements of consumer applications?
More info here: https://www.i-micronews.com/products/system-in-package-technology-and-market-trends-2020/
Short Circuit Instabilities in Silicon IGBTs and SiC Power MOSFETsPaula Diaz Reigosa
One of the most typical stresses that the device must withstand
is related to short-circuit events, which occur randomly during the component’s life.
Silicon-based IGBTs are good candidates for limiting the external current in case of a
short-circuit event, however their robustness is frequently limited due to instabilities.
In this Ph.D. thesis, the short-circuit performance of silicon-based IGBTs has been extensively
evaluated, but since Wide-Band Gap (WBG) devices, such as SiC MOSFETs,
are rapidly growing as a potential substitute of silicon-based technologies, its robustness
with respect to short circuit is also addressed.
Discrete Power Device Packaging: Materials Market and Technology Trends 2019 ...Yole Developpement
Despite the transition to SiP, SoC, and power modules, discrete device packaging still represents a big opportunity especially for materials suppliers.
More information on https://www.i-micronews.com/products/discrete-power-device-packaging-materials-market-and-technology-trends-2019/
Real-Time 200Gbit/s PAM4 Transmission Over 80km SSMF Using Quantum-Dot Laser ...ADVA
Using 200Gbit/s four-channel transmitter and receiver optical subassemblies (TOSAs/ROSAs) combining quantum dot laser and silicon photonics technology from Ranovus, ADVA Optical Networking demonstrated how to build cost-effective 400Gbit/s transponder cards at OFC 2017.
Rohm SiC MOSFET Gen3 Trench Design Familysystem_plus
Trench technology in Rohm 650V and 1200V SiC MOSFETs.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/rohm-sic-mosfet-gen3-trench-design-family/
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...Yole Developpement
Panasonic’s first 600V GaN HEMT has an innovative structure designed to integrate a normally-off transistor in a standard package, without a cascade structure
System Plus Consulting unveils Panasonic’s first GaN HEMT, assembled in a standard TO220 package. Thanks to its specific die design, the component is normally-off without using a cascade structure or special packaging.
Panasonic’s PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.
The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.
Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.
Moreover, this report offers a comparison with GaN Systems’ GS66504B and Transphorm’s GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.
For more information visite us at: http://www.i-micronews.com/reports.html
Status of the Advanced Packaging Industry 2018 Report by Yole Developpement Yole Developpement
In the era of a slowing Moore’s Law, advanced packaging has emerged as the savior of future semiconductor development.
More information on that report at https://www.i-micronews.com/report/product/status-of-the-advanced-packaging-industry-2018.html
In the ultrasound module market, CMUT and PMUT are growing two times faster in medical and consumer applications.
More information: https://www.i-micronews.com/products/ultrasound-sensing-technologies-2020/
Power SiC 2019: Materials, Devices, and Applications by Yole DéveloppementYole Developpement
This document provides an overview of the types of reports that will be available in 2019 from Yole Développement and its partner companies, System Plus Consulting and KnowMade. A total of over 125 reports will cover 18 technology fields across 6 end markets, including mobile/consumer, automotive, medical, industrial, telecom/infrastructure, and defense/aerospace. The reports will provide market analysis, technology trends, reverse costing analyses, and patent landscape investigations. Custom consulting services are also available to provide more in-depth insights into specific topics.
Discover Infineon‘s first double sided cooling power module for automotive.
More information on that report at https://www.i-micronews.com/category-listing/product/infineon-ff400r07a01e3-double-side-cooled-igbt-module.html
Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...Yole Developpement
Panasonic adopts a DFN 8x8 package for its normally-off GaN HEMT structure
System Plus Consulting unveils the first GaN HEMT from Panasonic assembled in a dual flat no-lead (DFN) 8x8 package. Panasonic decided to abandon the standard TO220 package, probably because of poor electrical performance. Thanks to its proprietary X-GaN transistor structure and new die design the company has managed to produce a very competitive normally-off component.
The new PGA26E19BA from Panasonic features a medium breakdown voltage of 600V for a current of 10A at 25°C, with very low on-resistance with respect to its competitors and the TO220 assembled component.The transistor is optimized to be used in power supplies and AC-DC, photovoltaic and motor inverters.
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...system_plus
The document provides a teardown analysis of Infineon's 1200V 50A CoolSiC MOSFET module, including a profile of Infineon, physical analysis of the module components, a description of the manufacturing processes, a cost analysis, and comparisons to other SiC MOSFET solutions. Through physical analysis, the report reveals Infineon's innovative SiC MOSFET and Schottky diode design assets. Manufacturing process details and a cost analysis estimate the costs to produce the module.
2.5D heterogeneous and 3D wafer-level stacking are reshaping the packaging landscape.
More information on that report at https://www.i-micronews.com/advanced-packaging-report/product/p2-5d-3d-tsv-wafer-level-stacking-technology-market-updates-2019.html
Power GaN 2019: Epitaxy, Devices, Applications and Technology Trends - Yole D...Yole Developpement
First design-win for GaN HEMTs in the high-volume smartphone fast charging market.
More information on: https://www.i-micronews.com/products/power-gan-2019-epitaxy-devices-applications-technology-trends/
GaN and SiC for power electronics applications 2015 Report by Yole DeveloppementYole Developpement
The SiC market is expected to treble and GaN is expected to explode - if challenges are overcome
In 2014, the SiC chip business was worth more than $133M. As in previous years, power factor correction (PFC) and photovoltaics (PV) are still the leading applications.
SiC diodes represent more than 80% of the market. In 2020, diodes will remain the main contributor across various applications, including electric and hybrid electric vehicles (EV/HEV), PV, PFC, wind, Uninterruptible Power Supplies (UPS) and motor drives.
SiC transistors will grow in parallel with diodes, driven by PV inverters. Challenges must be overcome prior to the adoption of pure SiC solutions for EV power train inverters, which is nevertheless expected by 2020.
Including the growth in both diodes and transistors we expect the total SiC market to more than treble by 2020, reaching $436M...
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Invertersystem_plus
Multiple optimized packaging innovations for this automotive power module from Vitesco Technologies.
More : https://www.systemplus.fr/reverse-costing-reports/vitesco-technologies-power-module-in-jaguar-i-pace-inverter/
Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...Yole Developpement
Rohm SCH2080KE SiC Transistor
2nd Generation SiC MOSFET with SiC-SBD
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The SCH2080KE from ROHM Semiconductor is a 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET. With a breakdown voltage of 1200V for a current of 28A (100°C), the SCH2080KE offers a very low on-resistance (80mΩ), a fast switching speed and a fast reverse recovery.
This MOSFET is already integrated in power modules by Danfoss for PV inverters and in train engine modules co-developed with Alstom. Rohm SiC MOSFET offers a second source to the CREE SiC MOSFET.
System Plus Consulting is publishing a reverse costing report on the SCH2080KE. Based on a complete teardown analysis, the report provides an estimation of the production cost of the SCH2080KE package, SiC MOSFET Transistor and Schottky Barrier Diode.
More information on that report at http://www.i-micronews.com/reports/Rohm-SCH2080KE-SiC-Transistor-2nd-Generation-SiC-MOSFET-SiC/12/432/
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...system_plus
The first 80V half-bridge GaN power stage from TI, with innovative packaging.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/texas-instruments-lmg5200-gan-power-stage/
Power SiC 2018: Materials, Devices and Applications 2018 Report by Yole Devel...Yole Developpement
Automotive is putting SiC on the road. Is the supply chain ready?
More information on that report at : https://www.i-micronews.com/category-listing/product/power-sic-2018-materials-devices-and-applications.html
System-in-Package Technology and Market Trends 2020 report by Yole DéveloppementYole Developpement
How is System-in-Package capably meeting the stringent requirements of consumer applications?
More info here: https://www.i-micronews.com/products/system-in-package-technology-and-market-trends-2020/
Short Circuit Instabilities in Silicon IGBTs and SiC Power MOSFETsPaula Diaz Reigosa
One of the most typical stresses that the device must withstand
is related to short-circuit events, which occur randomly during the component’s life.
Silicon-based IGBTs are good candidates for limiting the external current in case of a
short-circuit event, however their robustness is frequently limited due to instabilities.
In this Ph.D. thesis, the short-circuit performance of silicon-based IGBTs has been extensively
evaluated, but since Wide-Band Gap (WBG) devices, such as SiC MOSFETs,
are rapidly growing as a potential substitute of silicon-based technologies, its robustness
with respect to short circuit is also addressed.
Discrete Power Device Packaging: Materials Market and Technology Trends 2019 ...Yole Developpement
Despite the transition to SiP, SoC, and power modules, discrete device packaging still represents a big opportunity especially for materials suppliers.
More information on https://www.i-micronews.com/products/discrete-power-device-packaging-materials-market-and-technology-trends-2019/
Real-Time 200Gbit/s PAM4 Transmission Over 80km SSMF Using Quantum-Dot Laser ...ADVA
Using 200Gbit/s four-channel transmitter and receiver optical subassemblies (TOSAs/ROSAs) combining quantum dot laser and silicon photonics technology from Ranovus, ADVA Optical Networking demonstrated how to build cost-effective 400Gbit/s transponder cards at OFC 2017.
Rohm SiC MOSFET Gen3 Trench Design Familysystem_plus
Trench technology in Rohm 650V and 1200V SiC MOSFETs.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/rohm-sic-mosfet-gen3-trench-design-family/
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...Yole Developpement
Panasonic’s first 600V GaN HEMT has an innovative structure designed to integrate a normally-off transistor in a standard package, without a cascade structure
System Plus Consulting unveils Panasonic’s first GaN HEMT, assembled in a standard TO220 package. Thanks to its specific die design, the component is normally-off without using a cascade structure or special packaging.
Panasonic’s PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.
The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.
Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.
Moreover, this report offers a comparison with GaN Systems’ GS66504B and Transphorm’s GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.
For more information visite us at: http://www.i-micronews.com/reports.html
Status of the Advanced Packaging Industry 2018 Report by Yole Developpement Yole Developpement
In the era of a slowing Moore’s Law, advanced packaging has emerged as the savior of future semiconductor development.
More information on that report at https://www.i-micronews.com/report/product/status-of-the-advanced-packaging-industry-2018.html
In the ultrasound module market, CMUT and PMUT are growing two times faster in medical and consumer applications.
More information: https://www.i-micronews.com/products/ultrasound-sensing-technologies-2020/
Power SiC 2019: Materials, Devices, and Applications by Yole DéveloppementYole Developpement
This document provides an overview of the types of reports that will be available in 2019 from Yole Développement and its partner companies, System Plus Consulting and KnowMade. A total of over 125 reports will cover 18 technology fields across 6 end markets, including mobile/consumer, automotive, medical, industrial, telecom/infrastructure, and defense/aerospace. The reports will provide market analysis, technology trends, reverse costing analyses, and patent landscape investigations. Custom consulting services are also available to provide more in-depth insights into specific topics.
Discover Infineon‘s first double sided cooling power module for automotive.
More information on that report at https://www.i-micronews.com/category-listing/product/infineon-ff400r07a01e3-double-side-cooled-igbt-module.html
Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...Yole Developpement
Panasonic adopts a DFN 8x8 package for its normally-off GaN HEMT structure
System Plus Consulting unveils the first GaN HEMT from Panasonic assembled in a dual flat no-lead (DFN) 8x8 package. Panasonic decided to abandon the standard TO220 package, probably because of poor electrical performance. Thanks to its proprietary X-GaN transistor structure and new die design the company has managed to produce a very competitive normally-off component.
The new PGA26E19BA from Panasonic features a medium breakdown voltage of 600V for a current of 10A at 25°C, with very low on-resistance with respect to its competitors and the TO220 assembled component.The transistor is optimized to be used in power supplies and AC-DC, photovoltaic and motor inverters.
Take a look at the fifth generation of EPC’s low voltage transistor
The low voltage GaN device market is increasingly important, and Efficient Power Conversion Corporation (EPC) is a major player in low voltage GaN-on-silicon high-electron-mobility transistor (HEMT) devices. 100V GaN HEMTs are a very new technology but they already compete with silicon transistors, especially in the field of megahertz high frequency applications.
System Plus Consulting has investigated the company’s EPC2045 device, its latest driving 100V for applications such as single-stage 48V converters, USB-C data and power connectors, LiDAR sensors, point-of-load converters and loads in open rack server architectures.
With its new transistor and GaN epitaxy design, the EPC2045 achieves a breakdown voltage of 100V for a current of 16A at 25°C, and a very low RdsOn on-resistance of 7mΩ compared to the previous generation.
The chip-scale packaging of EPC products reduces the final device cost and decreases its inductance, bringing advantages not only with respect to competitors in GaN, but also silicon.
Compared to silicon transistors, GaN process developments have significantly lowered capacitance. This translates into lower gate drive losses and lower device switching losses at higher frequencies for the same on-resistance and voltage rating.
More information on that report at http://www.i-micronews.com/reports.html
In its new series of SiC MOSFETs, Rohm uses trench structures for 650V and 1200V products, while 1700V products use planar structures
After more than five years since SiC MOSFETs were first released, they are gradually penetrating different industries for power conversion applications. The market outlook is promising with a compound annual growth rate of 42% from 2015 to 2021. The forecast for 2017 is expected to be even better than previous years with increasingly positive signals from the industry.
Against this backdrop, Rohm offers a series of new SiC products at different voltages. It appears that it uses trench structures for 650V and 1200V products, while 1700V products use planar structures.
The SCT2H12NZGC11 is a 1700V SiC MOSFET from Rohm for industrial and commercial power application such as power supplies. The device offers a quite low on-resistance but very high current density and integrates the second generation high-voltage SiC power MOSFET dies, which now achieve 3.7A current.
Thanks to the die design the device’s cost is very competitive. The gate structure is very simple and the packaging is optimized to save costs.
The report presents a deep technology analysis of the packaging and components with images of the planar SiC structure.
More information on that report at http://www.i-micronews.com/reports.html
This document provides an analysis of Tesla's UBQ01B0 chip used for full self-driving capabilities. It includes a physical analysis of the die and packaging, an overview of the manufacturing process, and a cost analysis. The chip is a system-on-chip designed and produced by Tesla to power its driver-assist and autonomous driving features. It utilizes quad-core ARM processors alongside a GPU and NPU for processing sensor data and neural network operations. The analysis examines the chip's design and architecture at the physical, manufacturing, and cost levels.
Littelfuse and Monolith Semiconductors, in collaboration with X-Fab, have released a 1st-generation, high-reliability MOSFET with the hope of making this silicon carbide product mainstream.
The market outlook for SiC devices is promising, with a compound annual growth rate (CAGR) of 28% from 2016 – 2020. This will increase to 40% from 2020 – 2022 due to growth among automotive and industrial applications. In total, the SiC market will exceed $1B in 2022. In the energy conversion sector, SiC devices have an actual value of $250M, which will increase by around 28% in 2022. The reason for this relates to market forces pushing for loss reduction, not only for the sake of improved efficiency but also for smaller packages.
More information on that report a http://www.systemplus.fr/reverse-costing-reports/littelfuse-silicon-carbide-mosfet-lcis1mo120e0080-1200v-25a-80mohms/
GaN Systems GS61004B GaN HEMT 2018 teardown reverse costing report published ...system_plus
There are only two main players in the low-voltage GaN HEMT market: EPC and GaN Systems. GaN Systems wants to compete with EPC, the market leader, by unveiling its latest device, the GS61004B. The GS61004B is a GaN-on-silicon HEMT transistor packaged in GaN Systems' unique GaNpx embedded die package. This package has no wire bonding and its design increases heat dissipation while simplifying the manufacturing process to reduce costs. A teardown analysis estimates the production costs for the epitaxy and package. The report also compares the GS61004B to standard 100V Si MOSFETs and the competition.
Power Discrete Packaging Comparison 2018 report published by System Plus Cons...system_plus
A cost-oriented overview of evolutionary trends in power discrete packages, from mW to kW.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/power-discrete-packaging-comparison-2018/
The first 600V system-in-package half-bridge driver from STMicroelectronics integrating two GaN-based HEMTs.
More information: https://www.systemplus.fr/reverse-costing-reports/stmicroelectronics-mastergan1-half-bridge-driver/
Sensirion SGP30 Gas Sensor 2018 - teardown reverse costing report published b...system_plus
The first monolithic multi-gas sensor from Sensirion, with a unique and innovative design using metal oxide technology.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/sgp30-gas-sensor-from-sensirion/
Sensirion, a leading manufacturer of digital microsensors and systems, recently released a gas sensor designed for consumer and appliance applications: the SGP30 Multi-Pixel. The SGP30 gas sensor is a new kind of sensor which measures different gas types in any environment. With a DFN package volume under 5.5 mm3, this gas sensor can be embedded in a variety of low-power systems, including smartphones, tablets, and laptops.
SiGe based millimeter-wave chipset commercially available for
backhaul applications with beamforming capability.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/peraso-x710-chipset-60ghz-outdoor-wireless-broadband-solution/
EPC’s 70 V ePower stage with separate and independent high and low side control inputs.
More information: https://www.systemplus.fr/reverse-costing-reports/epc2152-half-bridge-monolithic-gan-ic/
Mitsubishi J1- Series 650V High-Power Modules for Automotivesystem_plus
The first power module with 7th-gen CSTBT IGBT and an innovative integrated substrate.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/mitsubishi-j1-series-650v-high-power-modules-for-automotive/
Taiyo Yuden SAW and BAW Band 7 Duplexer integrated into Skyworks’ System in P...Yole Developpement
Taiyo Yuden’s Well-Proven Metal Seal Packaging and SAW/BAW technology in LTE Band 7 high isolation duplexer used in Skyworks’ PAMiD
In the last five years, Skyworks has been the largest radio-frequency (RF) component supplier for Huawei. In Huawei’s last flagship, the Mate 9 Pro, and the P10 series, Skyworks supplies entire Long-Term Evolution (LTE) front-end solutions based on its SkyOne® Technology. The solutions comprise Low-, Mid- and High-Band front end modules (FEMs) featuring Surface Acoustic Wave (SAW) and Bulk Acoustic Wave (BAW) filters. Skyworks is known to produce its own SAW filter and to outsource the BAW filter. In its High-Band PA Module integrated Duplexer (PAMiD), Skyworks integrates a duplexer supplied by Taiyo Yuden in metal seal packaging featuring a SAW and a Thin Film Bulk Acoustic Resonator (FBAR)-BAW filter based on Taiyo Yuden Technology.
The filters are located in a System In Package (SiP) with a power amplifier, switch and a RF integrated circuit. The device is a custom version of a Taiyo Yuden commercial device. The duplexer’s SAW filter uses sapphire and lithium tantalate substrates and its BAW filter has an original FBAR design using an air gap cavity on a silicon substrate.
In this report, the complete duplexer is analyzed, from the filters to the packaging developed by Fujitsu Media Limited, which was bought by Taiyo Yuden. The report includes a complete analysis of the package, the SAW filter and the BAW filter, featuring a cost analysis and price estimation for the device. A schematic of the BAW filter is also provided to understand the difference between shunt and series cells.
Finally, the report includes complete performance and technology comparisons with the previous generation of the band 7 duplexer from Taiyo Yuden and a technology comparison with BAW filters and packaging solutions from Qorvo and Broadcom.
More information on that report at http://www.i-micronews.com/reports.html
Broadcom AFEM-8072 – Mid and High Band LTE RF Front-End Module (FEM) - teardo...system_plus
The first mid/high band Long Term Evolution (LTE) Radio Frequency (RF) FEM in the Apple iPhone X integrates the latest generation of Film Bulk Acoustic Resonator (FBAR) technology with advanced and innovative packaging.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/broadcom-afem-8072-mid-and-high-band-lte-rf-front-end-module-fem/
Qualcomm QCA9500 60 GHz Chipset - reverse costing report published by System ...system_plus
Disruptive double side molded system-in-package-based chipset for millimeter-wave applications targeting consumer devices, including integrated antennae.
2018 will be a key milestone in the journey towards 5G communication. Several areas, from semiconductor to packaging, will improve their technologies to be suitable for 5G deployment. We now know that the 5G frequency will be in the millimeter wave (mmWave) range.
More information on that report at http://www.i-micronews.com/reports.html
Deep analysis of the latest generation of under-display optical fingerprint sensors using micro-optics.
Reverse Costing - Structure, process and cost report by System Plus Consulting - find more here: https://www.systemplus.fr/reverse-costing-reports/goodixs-ultra-thin-optical-in-display-fingerprint/
Deep dive analysis of the fourth generation of mid/high band front-end module for 4G and 5G from Broadcom.
More information : https://www.systemplus.fr/reverse-costing-reports/broadcom-afem-8200-pamid-in-the-apple-iphone-12-series/
The document provides a full reverse costing analysis of the Hamamatsu C12880MA microspectrometer. It includes a physical analysis of the package, reflective grating, image sensor, and die cross-section. The manufacturing process flow is examined, covering the front-end IC process, wafer fabrication, sensor layers process, grating process, and packaging. A cost analysis is presented for the front-end, image sensor die, grating, packaging, and total component cost. The report also provides a selling price analysis and compares the C12880MA to other spectrometer technologies.
Comparison of main players AP: Apple A10 with inFO vs. Qualcomm Snapdragon 820 with MCeP packaging technology vs. HiSilicon Kirin 955 & Samsung Exynos 8 with standard Package-on-Package
Five major players are sharing the smartphone application processors (AP) market. Among them, Qualcomm, Apple, Samsung and HiSilicon propose the most powerful AP. They use almost the same technology node for the die, and the innovation is now at the packaging level. During this year, we observed different technologies inside the four main smartphone flagships: classic Package-on-Package (PoP) developed by Amkor for the Kirin 955 and for the Exynos 8, Molded Core Embedded Package (MCeP) technology developed by Shinko for the Snapdragon 820 and integrated Fan-Out packaging (inFO) developed by TSMC for the A10.
Located under the DRAM chip on the main board, the AP are packaged using PoP technology. The Apple A10 can be found in the iPhone 7 series. The HiSilicon Kirin 955 can be found in the Huawei P9 and the Samsung Exynos 8 as the Qualcomm Snapdragon 820 can be found in the Samsung Galaxy S7 series depending on the world version (US and Asia for the Snapdragon and International for the Exynos).
In this report, we highlight the differences and the innovations of the packages chosen by the end-user OEMs. Whereas some AP providers like for HiSilicon or Samsung choose to consider conventional PoP with embedded land-side capacitor (LSC), others like Apple or Qualcomm use innovative technologies like Fan-Out PoP and silicon based Deep Trench LSC or embedded die packaging with advanced PCB substrate. The detailed comparison between the four players will give the pros and the cons of the packaging technologies.
This report also compares the costs of the different approaches and includes a detailed technical comparison between the packaging structure of the Qualcomm Snapdragon 820, the Samsung Exynos 8, the HiSilicon Kirin 955 and the Apple A10.
More information on: http://www.i-micronews.com/reports.html
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Multiple optimized packaging innovations for this automotive power module from Vitesco Technologies.
More : https://www.systemplus.fr/reverse-costing-reports/iray-t3s-thermal-camera-for-smartphone/
Technical and cost overview of the evolution of radio frequency front-end module technologies integrated in 5G mmWave and Sub-6 GHz Phones.
More : https://www.systemplus.fr/reverse-costing-reports/rf-front-end-module-comparison-2021-vol-2-focus-on-5g-chipset/
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More information : https://www.systemplus.fr/reverse-costing-reports/apple-iphone-12-series-mmwave-5g-chipset-and-antenna/
This document provides an overview of NVIDIA's new A100 Ampere GPU. Some key points:
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- It features a 7nm GPU die with 54 billion transistors and 40/80GB of HBM2 memory in a 3D stacked configuration connected via microbumps and TSVs.
- The report includes a physical analysis of the package, dies, and assembly, as well as a cost analysis and estimated price. It finds the A100 provides significantly higher performance than previous generations like the V100.
Deep analysis of the 400Gb optical transceiver from a leading Chinese company.
More information: https://www.systemplus.fr/reverse-costing-reports/innolights-400g-qsfp-dd-optical-transceiver/
Microsoft - Holographic Lens from Hololens 2system_plus
See-through holographic display for mixed reality smartglasses.
More on : https://www.systemplus.fr/reverse-costing-reports/microsoft-holographic-lens-from-hololens-2/
Cost-effective 1 mm2 miniature camera with customizable wafer-level optics for endoscopy and novel medical imaging devices.
More information : https://www.systemplus.fr/reverse-costing-reports/ams-naneye-mini-camera/
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More information : https://www.systemplus.fr/reverse-costing-reports/axis-p1375-e-network-camera/
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Dig deep into Hikvision’s AI-powered thermal network camera for security applications.
More information: https://www.systemplus.fr/reverse-costing-reports/hikvision-intelligent-thermal-network-camera-ds-2td2166-15-v1/
Physical and cost analysis of Micron’s fifth-generation low-power DRAM memory.
More information: https://www.systemplus.fr/reverse-costing-reports/micron-lpddr5-12gb-mobile-memory/
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More information: https://www.systemplus.fr/reverse-costing-reports/safran-colibrys-ms1010-and-memsic-mxa2500m-high-end-accelerometers/
Sensonor STIM318 Inertial Measurement Unit (IMU)system_plus
Newest IMU with 9-axis detection and gyro bias instability of 0.3°/h from Sensonor.
More information: https://www.systemplus.fr/reverse-costing-reports/sensonor-stim318-inertial-measurement-unit-imu/
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More information: https://www.systemplus.fr/reverse-costing-reports/hamamatsu-photodiode-and-laser-in-livox-horizon-lidar/
Everspin’s Spin Transfer Torque MRAM with perpendicular magnetic tunnel junction.
More information: https://www.systemplus.fr/reverse-costing-reports/everspin-emd3d256m-sttmram-memory/
MEMS Fabry-Perot interferometer in a very tiny NIR spectrometer.
More information: https://www.systemplus.fr/reverse-costing-reports/spectral-engines-nirone-sensor-x/
World’s first 76-81 GHz automotive single-chip radar in a System-on-Chip device with integrated Antenna-in-Package using Fan-Out packaging technology.
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Broadcom AFEM-8100 System-in-Package in the Apple iPhone 11 Seriessystem_plus
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Reverse Costing - Structure, process and cost report - find more here: https://www.systemplus.fr/reverse-costing-reports/advanced-system-in-package-technology-in-apples-airpods-pro/
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The choice of an operating system plays a pivotal role in shaping our computing experience. For decades, Microsoft's Windows has dominated the market, offering a familiar and widely adopted platform for personal and professional use. However, as technological advancements continue to push the boundaries of innovation, alternative operating systems have emerged, challenging the status quo and offering users a fresh perspective on computing.
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While the dev and ops silo continues to crumble….many organizations still relegate monitoring & observability as the purview of ops, infra and SRE teams. This is a mistake - achieving a highly observable system requires collaboration up and down the stack.
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3.REBATES and DISCOUNTS
The quoted prices already include the rebates and discounts that System Plus Consulting could have granted according
to the number of orders placed by the Buyer, or other specific conditions. No discount is granted in case of early
payment.
4.TERMS OF PAYMENT
System Plus Consulting delivered services are to be paid within 30 days end of month by bank transfer except in the
case of a particular written agreement.
If the payment does not reach System Plus Consulting on the deadline, the Buyer has to pay System Plus Consulting a
penalty for late payment the amount of which is three times the legal interest rate. The legal interest rate is the
current one on the delivery date. This penalty is worked out on the unpaid invoice amount, starting from the invoice
deadline. This penalty is sent without previous notice.
When payment terms are over 30 days end of month, the Buyer has to pay a deposit which amount is 10% of the
total invoice amount when placing his order.
5. OWNERSHIP
System Plus Consulting remains sole owner of the delivered services until total payment of the invoice.
6.DELIVERIES
The delivery schedule on the purchase order is given for information only and cannot be strictly guaranteed.
Consequently any reasonable delay in the delivery of services will not allow the buyer to claim for damages or to
cancel the order.
7.ENTRUSTED GOODS SHIPMENT
The transport costs and risks are fully born by the Buyer. Should the customer wish to ensure the goods against lost or
damage on the base of their real value, he must imperatively point it out to System Plus Consulting when the
shipment takes place. Without any specific requirement, insurance terms for the return of goods will be the carrier
current ones (reimbursement based on good weight instead of the real value).
8.FORCE MAJEURE
System Plus Consulting responsibility will not be involved in non execution or late delivery of one of its duties
described in the current terms and conditions if these are the result of a force majeure case. Therefore, the force
majeure includes all external event unpredictable and irresistible as defined by the article 1148 of the French Code
Civil?
9.CONFIDENTIALITY
As a rule, all information handed by customers to system Plus Consulting are considered as strictly confidential.
A non-disclosure agreement can be signed on demand.
10.RESPONSABILITY LIMITATION
The Buyer is responsible for the use and interpretations he makes of the reports delivered by System Plus Consulting.
Consequently, System Plus Consulting responsibility can in no case be called into question for any direct or indirect
damage, financial or otherwise, that may result from the use of the results of our analysis or results obtained using
one of our costing tools.
11.APPLICABLE LAW
Any dispute that may arise about the interpretation or execution of the current terms and conditions shall be resolved
applying the French law.
It the dispute cannot be settled out-of-court, the competent Court will be the Tribunal de Commerce de Nantes.
TERMS AND CONDITIONS OF SALES