The 1st generation 1200V SiC MOSFET device from STMicroelectronics has good current density at a very competitive cost
The STC30N120 is the first generation 1200V SiC MOSFET device from STMicroelectronics. The device has a planar structure and a design that allows good electrical performance, such as high current density. Moreover, the supply chain and manufacturing choices lead to a very competitive cost.
The device is suitable for high power applications like motor drives, inverters, DC-DC converters and power supplies.
The STC30N120 integrates first generation high-voltage SiC power MOSFET dies in a dedicated discrete package.
The device is assumed to operate at very high temperature, up to 200°C, and to have an on-resistance of 90mΩ, with generally standard SiC manufacturing technology.
The report goes into depth in its analysis of the packaging and the components, with images of the complex planar SiC structure.
It also includes production cost analysis and detailed comparison with Rohm and Wolfspeed’s SiC MOSFETs and with 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.
For more information, please visit our website: http://www.i-micronews.com/reports.html
- The document provides a full reverse costing analysis of the Transphorm TPH3206PS 600V GaN-on-silicon HEMT power transistor.
- The analysis includes detailed photos and SEM analysis of the epitaxial layers and transistor structure, as well as an examination of the Quiet-Tab packaging.
- The manufacturing process flows for the GaN HEMT, resistor, MOSFET, and packaging are presented, along with an in-depth cost breakdown analysis.
- Estimates of the manufacturing cost and suggested manufacturer price are provided, and comparisons are made to Transphorm's TPH3002 and GaN Systems' GS66504B.
Rohm SiC MOSFET Gen3 Trench Design Familysystem_plus
Trench technology in Rohm 650V and 1200V SiC MOSFETs.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/rohm-sic-mosfet-gen3-trench-design-family/
Transphorm TPH3002PS 600V GaN on Silicon HEMT 2015 teardown reverse costing r...Yole Developpement
High voltage GaN HEMT developed for the high frequency operation in a low-inductance source terminal TO220 package
The TPH3002PS is a 600V EZ-GaN™ HEMT for high frequency operations from Transphorm. Manufactured by Fujitsu and assembled in a TO220 package, it features the Quiet-TabTM scheme which increases switching speed by 200%. With a 7.5ns turn-on and a 10ns turn-off, the TPH3002PS has a higher switch frequency than the best CoolMOS.
The TPH3002PS is based on a cascode configuration of a GaN on Silicon HEMT transistor to hold the high voltage and a standard low voltage MOSFET to drive high frequency and to make a normally-off transistor from a normally-on GaN HEMT.
The device is assembled in a TO220 package for an easy integration in converter electronic system. Moreover, it integrates a Quiet-Tab™ and a Gate-Source-Drain (GSD) pin-out arrangement in order to reduce the parasitic inductance and capacitance in high frequency and to allow 200% increase in switching speed compared to traditional TO-220.
The report presents a deep technology analysis of the packaging and the components with TEM images of the complex GaN epitaxy layer stack and transistor structure.
It also includes production cost analysis and overall comparison with GaN Systems GS66508P 650V HEMT.
More information on that report at http://www.i-micronews.com/reports.html
This document provides a summary of a report by System Plus Consulting on Wolfspeed's 900V SiC MOSFET family. The report includes a technical and cost analysis of Wolfspeed's third generation C3M0280090D 900V 11.5A SiC MOSFET device, an overview of the C3M0120090D and C3M0065090D, and a cost evolution analysis over five years. It also compares the C3M family to previous generations of Cree SiC MOSFETs and provides a cost comparison to Infineon Si MOSFETs and GaN Systems GaN HEMTs.
1200V Silicon IGBT vs SiC MOSFET Comparison 2018system_plus
Technology and cost analysis of thirteen silicon IGBTs and eight SiC MOSFETs from eight different manufacturers shows their potential.
More information on that report at: http://www.systemplus.fr/fr/reverse-costing-reports/1200v-silicon-igbt-vs-sic-mosfet-comparison-2018/
1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...system_plus
The document provides a teardown analysis of Infineon's 1200V 50A CoolSiC MOSFET module, including a profile of Infineon, physical analysis of the module components, a description of the manufacturing processes, a cost analysis, and comparisons to other SiC MOSFET solutions. Through physical analysis, the report reveals Infineon's innovative SiC MOSFET and Schottky diode design assets. Manufacturing process details and a cost analysis estimate the costs to produce the module.
Tesla Model 3 Inverter with SiC Power Module from STMicroelectronicssystem_plus
The first SiC power module in commercialized electric vehicles.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/tesla-model-3-inverter-with-sic-power-module-from-stmicroelectronics/
Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...Yole Developpement
Rohm SCH2080KE SiC Transistor
2nd Generation SiC MOSFET with SiC-SBD
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The SCH2080KE from ROHM Semiconductor is a 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET. With a breakdown voltage of 1200V for a current of 28A (100°C), the SCH2080KE offers a very low on-resistance (80mΩ), a fast switching speed and a fast reverse recovery.
This MOSFET is already integrated in power modules by Danfoss for PV inverters and in train engine modules co-developed with Alstom. Rohm SiC MOSFET offers a second source to the CREE SiC MOSFET.
System Plus Consulting is publishing a reverse costing report on the SCH2080KE. Based on a complete teardown analysis, the report provides an estimation of the production cost of the SCH2080KE package, SiC MOSFET Transistor and Schottky Barrier Diode.
More information on that report at http://www.i-micronews.com/reports/Rohm-SCH2080KE-SiC-Transistor-2nd-Generation-SiC-MOSFET-SiC/12/432/
- The document provides a full reverse costing analysis of the Transphorm TPH3206PS 600V GaN-on-silicon HEMT power transistor.
- The analysis includes detailed photos and SEM analysis of the epitaxial layers and transistor structure, as well as an examination of the Quiet-Tab packaging.
- The manufacturing process flows for the GaN HEMT, resistor, MOSFET, and packaging are presented, along with an in-depth cost breakdown analysis.
- Estimates of the manufacturing cost and suggested manufacturer price are provided, and comparisons are made to Transphorm's TPH3002 and GaN Systems' GS66504B.
Rohm SiC MOSFET Gen3 Trench Design Familysystem_plus
Trench technology in Rohm 650V and 1200V SiC MOSFETs.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/rohm-sic-mosfet-gen3-trench-design-family/
Transphorm TPH3002PS 600V GaN on Silicon HEMT 2015 teardown reverse costing r...Yole Developpement
High voltage GaN HEMT developed for the high frequency operation in a low-inductance source terminal TO220 package
The TPH3002PS is a 600V EZ-GaN™ HEMT for high frequency operations from Transphorm. Manufactured by Fujitsu and assembled in a TO220 package, it features the Quiet-TabTM scheme which increases switching speed by 200%. With a 7.5ns turn-on and a 10ns turn-off, the TPH3002PS has a higher switch frequency than the best CoolMOS.
The TPH3002PS is based on a cascode configuration of a GaN on Silicon HEMT transistor to hold the high voltage and a standard low voltage MOSFET to drive high frequency and to make a normally-off transistor from a normally-on GaN HEMT.
The device is assembled in a TO220 package for an easy integration in converter electronic system. Moreover, it integrates a Quiet-Tab™ and a Gate-Source-Drain (GSD) pin-out arrangement in order to reduce the parasitic inductance and capacitance in high frequency and to allow 200% increase in switching speed compared to traditional TO-220.
The report presents a deep technology analysis of the packaging and the components with TEM images of the complex GaN epitaxy layer stack and transistor structure.
It also includes production cost analysis and overall comparison with GaN Systems GS66508P 650V HEMT.
More information on that report at http://www.i-micronews.com/reports.html
This document provides a summary of a report by System Plus Consulting on Wolfspeed's 900V SiC MOSFET family. The report includes a technical and cost analysis of Wolfspeed's third generation C3M0280090D 900V 11.5A SiC MOSFET device, an overview of the C3M0120090D and C3M0065090D, and a cost evolution analysis over five years. It also compares the C3M family to previous generations of Cree SiC MOSFETs and provides a cost comparison to Infineon Si MOSFETs and GaN Systems GaN HEMTs.
1200V Silicon IGBT vs SiC MOSFET Comparison 2018system_plus
Technology and cost analysis of thirteen silicon IGBTs and eight SiC MOSFETs from eight different manufacturers shows their potential.
More information on that report at: http://www.systemplus.fr/fr/reverse-costing-reports/1200v-silicon-igbt-vs-sic-mosfet-comparison-2018/
1200V CoolSiCTM MOSFET Module DF11MR12W1M1_B11, from Infineon 2018 teardown r...system_plus
The document provides a teardown analysis of Infineon's 1200V 50A CoolSiC MOSFET module, including a profile of Infineon, physical analysis of the module components, a description of the manufacturing processes, a cost analysis, and comparisons to other SiC MOSFET solutions. Through physical analysis, the report reveals Infineon's innovative SiC MOSFET and Schottky diode design assets. Manufacturing process details and a cost analysis estimate the costs to produce the module.
Tesla Model 3 Inverter with SiC Power Module from STMicroelectronicssystem_plus
The first SiC power module in commercialized electric vehicles.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/tesla-model-3-inverter-with-sic-power-module-from-stmicroelectronics/
Rohm SCH2080KE SiC Transistor teardown reverse costing report by published Yo...Yole Developpement
Rohm SCH2080KE SiC Transistor
2nd Generation SiC MOSFET with SiC-SBD
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The SCH2080KE from ROHM Semiconductor is a 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET. With a breakdown voltage of 1200V for a current of 28A (100°C), the SCH2080KE offers a very low on-resistance (80mΩ), a fast switching speed and a fast reverse recovery.
This MOSFET is already integrated in power modules by Danfoss for PV inverters and in train engine modules co-developed with Alstom. Rohm SiC MOSFET offers a second source to the CREE SiC MOSFET.
System Plus Consulting is publishing a reverse costing report on the SCH2080KE. Based on a complete teardown analysis, the report provides an estimation of the production cost of the SCH2080KE package, SiC MOSFET Transistor and Schottky Barrier Diode.
More information on that report at http://www.i-micronews.com/reports/Rohm-SCH2080KE-SiC-Transistor-2nd-Generation-SiC-MOSFET-SiC/12/432/
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Invertersystem_plus
Multiple optimized packaging innovations for this automotive power module from Vitesco Technologies.
More : https://www.systemplus.fr/reverse-costing-reports/vitesco-technologies-power-module-in-jaguar-i-pace-inverter/
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...Yole Developpement
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The CAS120M12BM2 from CREE Semiconductor is a power module of 2 transistors with a breakdown voltage of 1200V for a current of 138A (90°C), an ultra low on-resistance (13mΩ), a fast switching speed and a fast reverse recovery.
The CAS120M12BM2 integrates 12 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET dies with a current of 23A (90°C) for 10 sq mm, and 24x Z-Rec diode of 4.8 sq mm are integrated in the power module. The Z-Rec diode is a mix between a Schottky and junction barrier diode....
Discover Infineon‘s first double sided cooling power module for automotive.
More information on that report at https://www.i-micronews.com/category-listing/product/infineon-ff400r07a01e3-double-side-cooled-igbt-module.html
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...system_plus
The first 80V half-bridge GaN power stage from TI, with innovative packaging.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/texas-instruments-lmg5200-gan-power-stage/
Hybrid bonding methods for lower temperature 3 d integration 1SUSS MicroTec
* Overview of primary 3D bonding processes
* Mechanics of metal bonding options
* Mechanics for hybrid bond materials
* Process requirement comparisons
* Equipment requirements for hybrid bond processes
Mitsubishi J1- Series 650V High-Power Modules for Automotivesystem_plus
The first power module with 7th-gen CSTBT IGBT and an innovative integrated substrate.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/mitsubishi-j1-series-650v-high-power-modules-for-automotive/
Samsung Exynos 9110 with ePLP: First Generation of Samsung’s Fan-Out Panel Le...system_plus
This report provides a reverse cost analysis of Samsung's Exynos 9110 application processor module used in the Samsung Galaxy Watch. The module utilizes Samsung's innovative ePLP (embedded Panel-Level Packaging) technology, which enables a package-on-package configuration with an embedded DRAM die. The ePLP module is extremely small at less than 80mm2 and includes the Exynos 9110 application processor die and a Samsung power management die embedded on a fan-out substrate with four redistribution layers. The report includes physical analysis of the package and dies, comparison to other advanced packaging technologies, manufacturing process flow analysis, and cost analysis.
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...Yole Developpement
GaN market growth is fed by Lidar, wireless charging and fast charging solutions.
More information on : https://www.i-micronews.com/category-listing/product/power-gan-2018-epitaxy-devices-applications-and-technology-trends.html
RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...Yole Developpement
GaN RF market growth is fed by military and 5G wireless infrastructure applications.
More information on https://www.i-micronews.com/products/rf-gan-market-applications-players-technology-and-substrates-2019/
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
The BSM180D12P3C007 offers a higher operating temperature (up to 150°C) in a 45mm x 122mm x 21mm package.
The report goes into depth in its analysis of the packaging and the components, with images of the complex trench SiC structure.
It also includes production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module.
More information on that report at http://www.i-micronews.com/reports.html
Take a look at the fifth generation of EPC’s low voltage transistor
The low voltage GaN device market is increasingly important, and Efficient Power Conversion Corporation (EPC) is a major player in low voltage GaN-on-silicon high-electron-mobility transistor (HEMT) devices. 100V GaN HEMTs are a very new technology but they already compete with silicon transistors, especially in the field of megahertz high frequency applications.
System Plus Consulting has investigated the company’s EPC2045 device, its latest driving 100V for applications such as single-stage 48V converters, USB-C data and power connectors, LiDAR sensors, point-of-load converters and loads in open rack server architectures.
With its new transistor and GaN epitaxy design, the EPC2045 achieves a breakdown voltage of 100V for a current of 16A at 25°C, and a very low RdsOn on-resistance of 7mΩ compared to the previous generation.
The chip-scale packaging of EPC products reduces the final device cost and decreases its inductance, bringing advantages not only with respect to competitors in GaN, but also silicon.
Compared to silicon transistors, GaN process developments have significantly lowered capacitance. This translates into lower gate drive losses and lower device switching losses at higher frequencies for the same on-resistance and voltage rating.
More information on that report at http://www.i-micronews.com/reports.html
STMicroelectronics MEMS Microphone -- Reverse Engineering AnalysisMEMS Journal, Inc.
This is a reverse engineering report of the STMicroelectronics MP34DT01 omnidirectional digital microphone. Details include a full description, tear down analysis and 3D model of the MEMS microphone with cross-sections and SEM images. The reports also includes a full review of the packaging strategy and a description of the sensor assembly process. Furthermore the report has 40 descriptive images, background on the application, performance specifications, interconnect strategies, materials used, EMC strategy description, an electrical schematic, chip attachment means, strengths and weaknesses of the design and links to the patent, data sheets and more.
The report is extremely useful for engineers and business leaders looking to better understand MEMS microphone design, packaging and assemblies processes. It is also beneficial within the MEMS microphone community as a competitive analysis tool.
Qorvo QPF4006 39GHz GaN MMIC Front End Modulesystem_plus
The first MMIC FEM targeting 5G base stations and terminals using a 0.15µm GaN-on-SiC process.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/qorvo-qpf4006-39ghz-gan-mmic-front-end-module/
This document provides an overview of equivalent circuits and circuit analysis techniques including node-voltage analysis, mesh analysis, and dealing with dependent and independent sources. It defines equivalent circuits as circuits that can replace one another without changing the external behavior of the overall circuit. It also describes node-voltage and mesh analysis, specifying how to write equations for each method by applying Kirchhoff's laws. Techniques for handling dependent sources and circuits with no path to ground are discussed. Examples demonstrate transforming between delta-wye configurations and using the different analysis methods to solve for voltages and currents.
Discrete Power Device Packaging: Materials Market and Technology Trends 2019 ...Yole Developpement
Despite the transition to SiP, SoC, and power modules, discrete device packaging still represents a big opportunity especially for materials suppliers.
More information on https://www.i-micronews.com/products/discrete-power-device-packaging-materials-market-and-technology-trends-2019/
UnitedSiC UJN1205K 1200V SiC JFET report published by System Plus Consultingsystem_plus
Discover the technological choices made by United Silicon Carbide Inc. (UnitedSiC) for its most advanced SiC JFET and its associated features
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/unitedsic-ujn1205k-1200v-sic-jfet/
System-in-Package Technology and Market Trends 2021 - SampleYole Developpement
Through enabling design and supply chain agility, SiP will reach $19B by 2026, with IDMs, OSATs, and foundries taking advantage of it.
More information : https://www.i-micronews.com/products/system-in-package-technology-and-market-trends-2021/
System-in-Package Technology and Market Trends 2020 report by Yole DéveloppementYole Developpement
How is System-in-Package capably meeting the stringent requirements of consumer applications?
More info here: https://www.i-micronews.com/products/system-in-package-technology-and-market-trends-2020/
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...Yole Developpement
Panasonic’s first 600V GaN HEMT has an innovative structure designed to integrate a normally-off transistor in a standard package, without a cascade structure
System Plus Consulting unveils Panasonic’s first GaN HEMT, assembled in a standard TO220 package. Thanks to its specific die design, the component is normally-off without using a cascade structure or special packaging.
Panasonic’s PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.
The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.
Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.
Moreover, this report offers a comparison with GaN Systems’ GS66504B and Transphorm’s GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.
For more information visite us at: http://www.i-micronews.com/reports.html
SCiO Molecular Sensor from Consumer Physics: Mobile Spectrometer Dongle - tea...Yole Developpement
The world’s first pocket-sized molecular sensor that can be integrated into consumer smartphones
For a long time, spectral analysis of materials has been limited to academic research. Everyday application of this type of analysis could bring new interactions in areas including food, fitness and medication. Starting with a crowdfunding campaign, and following the path of companies like FLIR, Consumer Physics, which was formerly Verifood Ltd., has created the first dongle molecular sensor, the SCiO Spectrometer. Thanks to big data and cloud technology, the dongle spectrometer claims to take the spectral fingerprint of any substance and quantify or identify any compound.
Consumer Physics is the first to bring spectrometry to consumers. Unlike other spectrometers, Consumer Physics produces a very simple package based on a tiny spectrometer head, with an area of 13 mm x 19 mm.
The SCiO Spectrometer integrates a 1.2 M pixel monochromatic CMOS image sensor from ON Semiconductor, a white LED from OSRAM and a bespoke filter/lens array. The LED is coupled to a reflector in the illumination module, which shines light on the analyzed substance, whose molecules absorb specific wavelengths. The received light in the spectrometer module is filtered and broken up into different wavelengths by the various lenses. Finally, the image sensor gives an instant response from the analyzed substance.
For more information please visit our website: http://www.i-micronews.com/reports.html
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Invertersystem_plus
Multiple optimized packaging innovations for this automotive power module from Vitesco Technologies.
More : https://www.systemplus.fr/reverse-costing-reports/vitesco-technologies-power-module-in-jaguar-i-pace-inverter/
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...Yole Developpement
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The CAS120M12BM2 from CREE Semiconductor is a power module of 2 transistors with a breakdown voltage of 1200V for a current of 138A (90°C), an ultra low on-resistance (13mΩ), a fast switching speed and a fast reverse recovery.
The CAS120M12BM2 integrates 12 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET dies with a current of 23A (90°C) for 10 sq mm, and 24x Z-Rec diode of 4.8 sq mm are integrated in the power module. The Z-Rec diode is a mix between a Schottky and junction barrier diode....
Discover Infineon‘s first double sided cooling power module for automotive.
More information on that report at https://www.i-micronews.com/category-listing/product/infineon-ff400r07a01e3-double-side-cooled-igbt-module.html
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...system_plus
The first 80V half-bridge GaN power stage from TI, with innovative packaging.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/texas-instruments-lmg5200-gan-power-stage/
Hybrid bonding methods for lower temperature 3 d integration 1SUSS MicroTec
* Overview of primary 3D bonding processes
* Mechanics of metal bonding options
* Mechanics for hybrid bond materials
* Process requirement comparisons
* Equipment requirements for hybrid bond processes
Mitsubishi J1- Series 650V High-Power Modules for Automotivesystem_plus
The first power module with 7th-gen CSTBT IGBT and an innovative integrated substrate.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/mitsubishi-j1-series-650v-high-power-modules-for-automotive/
Samsung Exynos 9110 with ePLP: First Generation of Samsung’s Fan-Out Panel Le...system_plus
This report provides a reverse cost analysis of Samsung's Exynos 9110 application processor module used in the Samsung Galaxy Watch. The module utilizes Samsung's innovative ePLP (embedded Panel-Level Packaging) technology, which enables a package-on-package configuration with an embedded DRAM die. The ePLP module is extremely small at less than 80mm2 and includes the Exynos 9110 application processor die and a Samsung power management die embedded on a fan-out substrate with four redistribution layers. The report includes physical analysis of the package and dies, comparison to other advanced packaging technologies, manufacturing process flow analysis, and cost analysis.
Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends report b...Yole Developpement
GaN market growth is fed by Lidar, wireless charging and fast charging solutions.
More information on : https://www.i-micronews.com/category-listing/product/power-gan-2018-epitaxy-devices-applications-and-technology-trends.html
RF GaN Market: Applications, Players, Technology and Substrates 2019 report b...Yole Developpement
GaN RF market growth is fed by military and 5G wireless infrastructure applications.
More information on https://www.i-micronews.com/products/rf-gan-market-applications-players-technology-and-substrates-2019/
The new 1200V MOSFET module from Rohm – with the first trench SiC MOSFET on the market – reduces power losses and has a higher performance/cost ratio than the previous generation
The BSM180D12P3C007 is a 1200V 180A SiC MOSFET module from Rohm for high power applications like motor drives, inverters, photovoltaics and induction heating equipment. In comparison with the previous generation of SiC MOSFETs, which have a planar structure, the trench structure halves on-resistance and reduces switching losses by 42%.
The BSM180D12P3C007 integrates the third generation high-voltage SiC power MOSFET dies with a current of 36A and the innovative trench structure. Ten SiC Schottky Barrier diodes are also integrated into the power module.
The BSM180D12P3C007 offers a higher operating temperature (up to 150°C) in a 45mm x 122mm x 21mm package.
The report goes into depth in its analysis of the packaging and the components, with images of the complex trench SiC structure.
It also includes production cost analysis and overall comparison with the planar SiC MOSFET from Rohm and the Cree CAS120M12BM2 module.
More information on that report at http://www.i-micronews.com/reports.html
Take a look at the fifth generation of EPC’s low voltage transistor
The low voltage GaN device market is increasingly important, and Efficient Power Conversion Corporation (EPC) is a major player in low voltage GaN-on-silicon high-electron-mobility transistor (HEMT) devices. 100V GaN HEMTs are a very new technology but they already compete with silicon transistors, especially in the field of megahertz high frequency applications.
System Plus Consulting has investigated the company’s EPC2045 device, its latest driving 100V for applications such as single-stage 48V converters, USB-C data and power connectors, LiDAR sensors, point-of-load converters and loads in open rack server architectures.
With its new transistor and GaN epitaxy design, the EPC2045 achieves a breakdown voltage of 100V for a current of 16A at 25°C, and a very low RdsOn on-resistance of 7mΩ compared to the previous generation.
The chip-scale packaging of EPC products reduces the final device cost and decreases its inductance, bringing advantages not only with respect to competitors in GaN, but also silicon.
Compared to silicon transistors, GaN process developments have significantly lowered capacitance. This translates into lower gate drive losses and lower device switching losses at higher frequencies for the same on-resistance and voltage rating.
More information on that report at http://www.i-micronews.com/reports.html
STMicroelectronics MEMS Microphone -- Reverse Engineering AnalysisMEMS Journal, Inc.
This is a reverse engineering report of the STMicroelectronics MP34DT01 omnidirectional digital microphone. Details include a full description, tear down analysis and 3D model of the MEMS microphone with cross-sections and SEM images. The reports also includes a full review of the packaging strategy and a description of the sensor assembly process. Furthermore the report has 40 descriptive images, background on the application, performance specifications, interconnect strategies, materials used, EMC strategy description, an electrical schematic, chip attachment means, strengths and weaknesses of the design and links to the patent, data sheets and more.
The report is extremely useful for engineers and business leaders looking to better understand MEMS microphone design, packaging and assemblies processes. It is also beneficial within the MEMS microphone community as a competitive analysis tool.
Qorvo QPF4006 39GHz GaN MMIC Front End Modulesystem_plus
The first MMIC FEM targeting 5G base stations and terminals using a 0.15µm GaN-on-SiC process.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/qorvo-qpf4006-39ghz-gan-mmic-front-end-module/
This document provides an overview of equivalent circuits and circuit analysis techniques including node-voltage analysis, mesh analysis, and dealing with dependent and independent sources. It defines equivalent circuits as circuits that can replace one another without changing the external behavior of the overall circuit. It also describes node-voltage and mesh analysis, specifying how to write equations for each method by applying Kirchhoff's laws. Techniques for handling dependent sources and circuits with no path to ground are discussed. Examples demonstrate transforming between delta-wye configurations and using the different analysis methods to solve for voltages and currents.
Discrete Power Device Packaging: Materials Market and Technology Trends 2019 ...Yole Developpement
Despite the transition to SiP, SoC, and power modules, discrete device packaging still represents a big opportunity especially for materials suppliers.
More information on https://www.i-micronews.com/products/discrete-power-device-packaging-materials-market-and-technology-trends-2019/
UnitedSiC UJN1205K 1200V SiC JFET report published by System Plus Consultingsystem_plus
Discover the technological choices made by United Silicon Carbide Inc. (UnitedSiC) for its most advanced SiC JFET and its associated features
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/unitedsic-ujn1205k-1200v-sic-jfet/
System-in-Package Technology and Market Trends 2021 - SampleYole Developpement
Through enabling design and supply chain agility, SiP will reach $19B by 2026, with IDMs, OSATs, and foundries taking advantage of it.
More information : https://www.i-micronews.com/products/system-in-package-technology-and-market-trends-2021/
System-in-Package Technology and Market Trends 2020 report by Yole DéveloppementYole Developpement
How is System-in-Package capably meeting the stringent requirements of consumer applications?
More info here: https://www.i-micronews.com/products/system-in-package-technology-and-market-trends-2020/
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...Yole Developpement
Panasonic’s first 600V GaN HEMT has an innovative structure designed to integrate a normally-off transistor in a standard package, without a cascade structure
System Plus Consulting unveils Panasonic’s first GaN HEMT, assembled in a standard TO220 package. Thanks to its specific die design, the component is normally-off without using a cascade structure or special packaging.
Panasonic’s PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.
The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.
Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.
Moreover, this report offers a comparison with GaN Systems’ GS66504B and Transphorm’s GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.
For more information visite us at: http://www.i-micronews.com/reports.html
SCiO Molecular Sensor from Consumer Physics: Mobile Spectrometer Dongle - tea...Yole Developpement
The world’s first pocket-sized molecular sensor that can be integrated into consumer smartphones
For a long time, spectral analysis of materials has been limited to academic research. Everyday application of this type of analysis could bring new interactions in areas including food, fitness and medication. Starting with a crowdfunding campaign, and following the path of companies like FLIR, Consumer Physics, which was formerly Verifood Ltd., has created the first dongle molecular sensor, the SCiO Spectrometer. Thanks to big data and cloud technology, the dongle spectrometer claims to take the spectral fingerprint of any substance and quantify or identify any compound.
Consumer Physics is the first to bring spectrometry to consumers. Unlike other spectrometers, Consumer Physics produces a very simple package based on a tiny spectrometer head, with an area of 13 mm x 19 mm.
The SCiO Spectrometer integrates a 1.2 M pixel monochromatic CMOS image sensor from ON Semiconductor, a white LED from OSRAM and a bespoke filter/lens array. The LED is coupled to a reflector in the illumination module, which shines light on the analyzed substance, whose molecules absorb specific wavelengths. The received light in the spectrometer module is filtered and broken up into different wavelengths by the various lenses. Finally, the image sensor gives an instant response from the analyzed substance.
For more information please visit our website: http://www.i-micronews.com/reports.html
Advanced Substrates Overview: From IC Package to Board - 2017 Report by Yole ...Yole Developpement
How can advanced substrates and boards bridge the gap created by front-end scaling?
Advanced substrates as a key enabler of future products and markets
In an uncertain, transformative semiconductor market, advanced packaging is one of the key technologies offering stability and a long-term solution. On one hand it can adapt to product diversification, offering more functionality, system integration, and performance, as well as potentially lower manufacturing cost; and on the other hand it can adhere to future scaling requirements. Advanced substrates are the key interconnect component of advanced packaging architectures and are critical in enabling future products and markets. For this reason, Yole has established this stand-alone dedicated advanced substrate activity, focused on exploring the market and technologies of PCBs, package substrates and RDLs. This first report will serve as an overview of advanced substrate technologies, markets, and supply chain, to be supported by subsequent in-depth reports.
Today’s advanced substrates in volume are Flip Chip (FC) substrates, 2.5D/3D TSV assemblies, and thin-film RDLs (Fan-Out WLP, or “FOWLP”) below an L/S resolution of 15/15 um and with transition below L/S < 10/10 um. These advanced substrates are traditionally linked to higher-end logic (CPUs/GPUs, DSPs, etc.) driven by ICs in the latest technology nodes in the computing, networking, mobile, and high-end consumer market segments (gaming, HD/Smart TV). However, due to additional form factor and low power demands, WLP and advanced FC substrates are also widespread in majority of smartphone functions: application processors, baseband, transceivers, filters, amplifiers, WiFi modules, drivers, codecs, power management, etc.
For more information, please visit our website: http://www.i-micronews.com/reports.html
Status of the Power Electronics Industry - 2016 Report by Yole DeveloppementYole Developpement
With strong price pressure and a very strong leader, how will the power electronics market and landscape evolve in the future?
Vehicle hybridization is pulling the power electronics market
The 21st century is full of challenges to overcome, including population growth, reducing CO2 emissions and developing energy sources to replace liquid fuel. Power electronics will play a key part in solving these problems. Among the applications Yole Développement follows, motor drives are helping increase motor efficiency, photovoltaics and wind turbines continue expand their role in energy supply, and rail networks are moving more people. But one application stands out thanks to the huge volumes involved: electric vehicles. In the 2000s MOSFETs drove growth, and in the early 2010s it was renewable energy. The late 2010s and 2020s could be the golden era for electric vehicles, if customers adopt it and governments keep on subsidizing the field.
2015 has been a difficult year for the power electronics market, with the global value of power ICs, power modules and discrete components decreasing from $15.7 billion to $15.2 billion, a 3% drop. This fall is explained mainly by strong Average Selling Price (ASP) decreases at IGBT module level. We expect this ASP trend to continue, mainly because of price pressure from the automotive market. But overall IGBT module and global power electronics market value should increase, as volume growth outweighs this ASP fall. The automotive market will strengthen its position, as we expect electric and hybrid electric vehicles (EV/HEV) to represent a major part of the IGBT module market by 2021. Over this time the power MOSFET market is expected to grow slightly for all applications, going from $1 billion to $1.2 billion value.
Tiny MEMS digital barometer for smartphones and wearables
The first barometric sensor from Infineon for the consumer market is targeting altitude, GPS, indoor and weather forecasting applications in portable devices. This MEMS sensor positions Infineon to compete with STMicroelectronics and Bosch Sensortec.
Infineon’s DPS310 pressure-sensing device is manufactured using a proprietary MEMS technology developed for and already sold for several years in the automotive market. The sensing element in the DPS310 is based on a flexible silicon membrane formed above an air cavity with a controlled gap and defined internal pressure. The membrane is very small compared to traditional silicon micro-machined membranes. Moreover, Infineon has developed a capacitive sensor to be more accurate and less sensitive to temperature change compared to piezoresistive solutions.
For the DPS310, Infineon has introduced two important innovations. The first is a two-die solution more scalable than the monolithic solution used for some automotive pressure sensors.
The second innovation is a plastic metallized lid to replace the classic metal lid. The device comes in a tiny 2x2.5x0.9mm HLGA molded package.
The report presents a detailed analysis of the sensor’s structure and cost. Comparison with the characteristics of the STMicroelectronics pressure sensor LPS22HB and the Bosch Sensortec BMP280 highlights differences in technical choices made by the companies.
More information on that report at http://www.i-micronews.com/reports.html
Safran Colibrys VS1000 Series - teardown reverse costing report published by ...Yole Developpement
Safran Colibrys is the leading European supplier of high-performance silicon-based MEMS providing long-term bias stability under harsh environments. In a global market worth around $100M in 2016, high-performance silicon-based MEMS accelerometers address a wide range of applications, from commercial aerospace applications to the defense market. Amongst these, the industrial market remains attractive and the most dynamic. Thanks to performance improvements and reduced size and cost, more opportunities are appearing.
The VS1000 series consists of vibration sensors based on Colibrys’ MEMS accelerometer. They offer the best match for low- to medium-frequency sensing, as well as the best performance stability, with shock resistance and the lowest non-linearity and noise available on the market. The VS1000 is available in various acceleration ranges, from ±2g to ±200g.
The VS1000 features an innovative low-noise application specific integrated circuit (ASIC) developed by HMT microelectronic AG and manufactured in a European foundry with a bipolar CMOS-DMOS process using Deep Trench Isolation (DTI). The ASIC is highly integrated in order to use only one die compared to four dies in the previous versions.
The MEMS die uses a capacitive detection principle and is manufactured by Colibrys using its mature 3-stack bulk micromachining process, providing a very stable MEMS device. The ASIC and MEMS dies are hermetically sealed in a ceramic package to ensure robustness and durability.
More information on: http://www.i-micronews.com/reports.html
Inverter Technology Trends and Market Expectations 2016 Report by Yole Develo...Yole Developpement
Growing at 6% per year from 2015-2021 and with increased presence from Chinese players, the inverter industry is heading towards higher power density converters.
2015 was a historic year for solar inverter and wind turbine installations.
The inverter market that Yole Développement covers in this report is continuing its growth, reaching $48B in 2015. Applications span electric and hybrid electric vehicles (EV/HEV), wind turbines, photovoltaic (PV) inverters, rail traction, uninterruptible power supplies (UPS) and industrial motor drives. The market is driven by three macroeconomic factors: electrification trends in transportation, the need for power conversion optimization for CO2 emission reduction, and the development of clean electricity sources. Governmental incentives and especially the Chinese government’s control of their local market drives an expanding inverter market, which is now largely oriented towards the Asian giant...
Power SiC 2016: Materials, Devices, Modules, and Applications - 2016 Report b...Yole Developpement
More confident and more prepared, power SiC is progressing at a 2015 - 2021 CAGR of 19%!
SiC power is diffusing into multiple application segments
When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? 15 years later, in 2016, people don’t ask these questions anymore. The SiC power business is concrete and real, with a promising outlook. The SiC power market (diode and transistor included) is estimated to be more than $200M in 2015 and forecasted to be more than $550M in 2021, with a 2015 - 2021 CAGR of 19%. Not surprisingly, the power factor correction (PFC) power supply market is still the leading application, consuming a large volume of diodes.
Photovoltaics (PV) inverters are close behind. SiC diodes and MOSFETs are now used by various PV inverter manufacturers in their products. It has been confirmed that SiC implementation provides several performance benefits: increased efficiency, reduced size and weight. In addition, it allows to low cost at the system level in certain power range. Yole Développement has received increasingly positive feedback from the market, and we expect other manufacturers to follow in the footsteps of the early adopters, leading to a rapid expansion of the PV segment in the coming years.
Power GaN 2016: Epitaxy and Devices, Applications, and Technology Trends - 20...Yole Developpement
GaN power devices: a promising, fast-growing market
A GROWING MARKET WITH LOTS OF EXCITING NEWS IN 2015 - 2016
2015 - 2016 has been an exciting year for the gallium nitride (GaN) power business. Up until late 2014, 600V/650V GaN HEMTs’ commercial availability was still questionable, despite some announcements from different players. Fast-forward to 2016 end users can now buy not only low-voltage GaN (<200V) devices from Efficient Power Conversion (EPC), but also high-voltage (600V/650V) components from several players, including Transphorm, GaN Systems, and Panasonic.
Also, a new start-up, Navitas Semiconductor, announced their GaN power IC in March 2016, followed by Dialog Semiconductors revealing their GaN power IC in August 2016. The idea
of bringing GaN from the power semiconductor market to the much bigger analog IC market is of interest to several other players too. For example, EPC and GaN Systems are both working on a more integrated solution, and Texas Instruments, a well-established analog IC player, has also been engaged in GaN activities, releasing an 80V power stage and 600V power stage in 2015 and 2016, respectively.
Despite these exciting developments, the GaN power market remains small compared to the gigantic $335B silicon semiconductor market. In fact, according to Yole Développement (Yole) investigation the GaN power business was less than $10M in 2015. But before you think twice about GaN, remember that a small market size is not unusual for products just appearing on the market.
The first GaN devices were not commercially available until 2010, so we are talking about an industry that is only six years old. What is most important is the GaN market’s future potential – and Yole expects the GaN power business to grow, reaching a market size of around $300M in 2021 at a 2016 – 2021 CAGR of 86%.
This report provides a structured vision of the GaN power device market in terms of uses, applications, and potential trends.
RF Front End modules and components for cellphones 2017 - Report by Yole Deve...Yole Developpement
A dynamic market with high responsivity to technical innovation, the RF front end industry is set to grow at 14% CAGR to reach $22.7B in 2022.
A market that will more than double in six years!
The radio-frequency (RF) front end and components market for cellphones is highly dynamic. From being worth $10.1B last year, it is expected to reach $22.7B in 2022. Such high growth is definitely something that players in other semiconductor markets would envy. However, the growth is not evenly distributed.
Filters represent the biggest business in the RF front end industry, and the value of this business will more than triple from 2016 to 2022. Most of this growth will derive from additional filtering needs from new antennas as well as the need for more filtering functionality due to multiple carrier aggregation (CA).
Power amplifiers (PAs) and low noise amplifiers (LNAs), the second biggest business, will be almost flat over the same period. High-end LTE PA market growth will be balanced by a shrinking 2G/3G market. The LNA market will grow steadily, especially thanks to the addition of new antennas.
Switches, the third biggest business, will double. This market will mainly be driven by antenna switches.
Lastly, antenna tuners, a small business today with an estimated $36M market value, will expand 7.5-fold to reach $272M in 2022. This growth is mainly due to tuning being added to both the main and the diversity antennas.
For more discussion, please visit our website: http://www.i-micronews.com/reports.html
Toyota Prius 4 PCU Power Modules - teardown reverse costing report published ...Yole Developpement
Toyota Prius 4 PCU modules integrate IGBT and freewheeling diodes onto innovative double side cooling packaging for hybrid electric vehicles, allowing better thermal dissipation, modularity and scalability of the system.
For its latest Prius 4 Toyota has designed a new power control unit (PCU). The PCU has two types of power module, one for the motor inverter and the other for the boost converter and generator inverter.
PCU power module toyota prius 4 system plus consulting
The module integrates Toyota’s latest power card packaging, with double side cooling. It allows the modularity and scalability of the PCU’s inverters to be optimized and also enables better thermal dissipation thanks to the use of copper heatsinks and spacers. The power cards can be placed in parallel to have a single thermal dissipation circuit in a limited space.
This package includes two pairs of wire bonded IGBTs and freewheeling diodes and is plastic molded.
This report offers a deep technical analysis of the module structure, packaging, and of the IGBT and diode die.
Based on a complete teardown analysis, the report also provides an estimation of the production cost of the package, IGBT and diode.
Moreover, the report compares the Prius 4 PCU with the Chevrolet Volt power module, analyzing the technical choices of the packaging and the die. This comparison highlights the huge differences in design and manufacturing process and their impact on device size and production cost.
2-Axis Gyroscopes for Optical Image Stabilization: STMicroelectronics L2G2IS ...Yole Developpement
Complete reports and comparison of the latest generation products for smartphones from the leading optical image stabilization gyro players.
2-Axis Gyroscopes for Optical Image Stabilization (OIS) constitute a market where 123 million units were shipped in 2015, according to Yole Développement. This market originates only from high-end smartphones and two players share most of it: InvenSense, with 49%, and STMicroelectronics, with 39%.
The 2-axis gyroscopes are located inside the camera module of high-end smartphones. The main constraints are a small footprint and, more importantly, thinness.
Previously, thickness was the same as standard land grid array (LGA) or quad flat no-leads (QFN) package, close to 1mm. Now the standard is 0.65mm, which products from both InvenSense and STMicroelectronics attain.
InvenSense was first, with the IDG-2030, a 2.3x2.3x0.65mm gyroscope, which is still the smallest on the market. Since its introduction we found it in several smartphones from various manufacturers. The IDG-2030 uses the same Nasiri platform as other InvenSense inertial devices, with wafer-level integration of the MEMS sensor on top of the application specific integrated circuit (ASIC), thus providing only one die in the final LGA package.
Months later, STMicroelectronics released the L2G2IS, which shares the same dimensions. The device is manufactured using the same THELMA process as all STMicroelectronics inertial devices. The THELMA platform involves a two-die approach that is challenging for very thin package integration. However, both players now offer very low-cost gyros thanks to die size reduction and process optimization.
Both gyroscopes analyzed are 2-axis X, Y (Pitch, Roll). The two reports can be purchased separately or together in order to compare the technology and pricing of the main smartphone OIS gyro players, including previous generation products.
More information on that report at http://www.i-micronews.com/reports.html
Comparison of main players AP: Apple A10 with inFO vs. Qualcomm Snapdragon 820 with MCeP packaging technology vs. HiSilicon Kirin 955 & Samsung Exynos 8 with standard Package-on-Package
Five major players are sharing the smartphone application processors (AP) market. Among them, Qualcomm, Apple, Samsung and HiSilicon propose the most powerful AP. They use almost the same technology node for the die, and the innovation is now at the packaging level. During this year, we observed different technologies inside the four main smartphone flagships: classic Package-on-Package (PoP) developed by Amkor for the Kirin 955 and for the Exynos 8, Molded Core Embedded Package (MCeP) technology developed by Shinko for the Snapdragon 820 and integrated Fan-Out packaging (inFO) developed by TSMC for the A10.
Located under the DRAM chip on the main board, the AP are packaged using PoP technology. The Apple A10 can be found in the iPhone 7 series. The HiSilicon Kirin 955 can be found in the Huawei P9 and the Samsung Exynos 8 as the Qualcomm Snapdragon 820 can be found in the Samsung Galaxy S7 series depending on the world version (US and Asia for the Snapdragon and International for the Exynos).
In this report, we highlight the differences and the innovations of the packages chosen by the end-user OEMs. Whereas some AP providers like for HiSilicon or Samsung choose to consider conventional PoP with embedded land-side capacitor (LSC), others like Apple or Qualcomm use innovative technologies like Fan-Out PoP and silicon based Deep Trench LSC or embedded die packaging with advanced PCB substrate. The detailed comparison between the four players will give the pros and the cons of the packaging technologies.
This report also compares the costs of the different approaches and includes a detailed technical comparison between the packaging structure of the Qualcomm Snapdragon 820, the Samsung Exynos 8, the HiSilicon Kirin 955 and the Apple A10.
More information on: http://www.i-micronews.com/reports.html
Point-of-Need Testing: Application of Microfluidic Technologies - 2016 Report...Yole Developpement
Decentralized testing for both human and non-human in-vitro diagnostics is increasingly taking advantage of innovative microfluidic technologies
PLENTY OF APPLICATIONS HAVE STARTED TO BENEFIT FROM MICROFLUIDICS FOR DECENTRALIZED TESTING, BUT HAVE NOT REALIZED THEIR FULL POTENTIAL – YET
Point-of-Care (PoC) testing is not a new concept - the first applications arose in the 1990s. Since then, microfluidic technologies have been increasingly used to solve technical problems and bring economic benefits to the healthcare industry. In the past few years, other applications have benefited from recent technological improvements: veterinary testing, environmental testing, agro-food and industrial testing are also part of the scope of the report. Decentralized testing brings significant operational benefits to various players across these applications.
Microfluidics is part of the diagnostics revolution, with an explosion in the number of products on the market. However, with many applications but few solutions existing today, these markets have not yet reached their full potential.
In the report, Yole Développement (Yole)’s analysts explain why the human healthcare market still looks much more attractive to technology developers. However, in the near future the greatest opportunities will be in all the other markets. The report also explores which barriers still need to be taken down for decentralized, or “point-of-need” (PoN), testing to flourish.
Microfluidics-based point-of-need testing will grow from a $2.6B market in 2015 to $10.3B in 2021, which is a 26% compound annual growth rate (CAGR). This value represents more than 500 million tests in 2021, but only 61 million will be outside human diagnostics. In the report, Yole’s analysts detail the evolution of each application in terms of microfluidic technology’s use.
Bulk GaN Substrate Market 2017 Report by Yole DeveloppementYole Developpement
Optoelectronics applications are driving the bulk GaN substrate market
Optoelectronics applications, particularly GaN-based laser diodes and GaN-on-GaN LEDs, are expected to drive the bulk GaN susbtrate market from 2016 - 2022.
Specific to the laser diode market, the Blu-ray segment, which in the past was the GaN-based laser industry’s main driver, continues to decline. In recent years, a much greater percentage of movies were viewed via streaming than on optical discs, and in many cases flash memory is replacing optical discs and magnetic storage. The current crop of mobile phones, netbooks, tablets, and even laptops lack a Blu-ray/DVD/CD drive. UHD Blu-ray’s recent development is expected to have only a novelty effect on sales - not enough to reverse the general downward trend we will see in the coming years. However, decreasing Blu-ray demand is expected to be offset by nascent, growing segments like projectors (office projector, mobile pico projector, head-up display (HUD), etc.) and automotive lighting, leading to new growth opportunities for bulk GaN substrates.
In the LED market, improvements in GaN substrate manufacturing have lowered substrate prices enough for various niche LED applications. In addition to Soraa (US) and Panasonic (JP), this seems to have revived the interest of other LED manufacturers which are beginning to seriously consider using GaN substrates for either spotlighting or automotive lighting. New GaN-on-GaN LED players are expected in the market in the coming years.
For more information, please visit our website: http://www.i-micronews.com/reports.html
From almost zero to a multi-billion dollar market in three years!
Apple introduced the iPhone 5s in 2013, after acquiring Authentec a year earlier. Since then, fingerprint sensors have been massively adopted, and the volumes of sensors shipped into the consumer market have grown incredibly. At first, the sensors were a convenience and protection feature for unlocking phones. However, they are now shifting into a security feature for online identification and mobile payment in an increasing number of smartphones.
From 23 million units in 2013, 689 million fingerprint sensors for smartphones were sold in 2016. This is an incredible 210% compound annual growth rate (CAGR) between 2013 and 2016! The 2016-2022 timeframe will see a more reasonable, but still impressive, 19% CAGR.
Fingerprint sensing is becoming a mandatory feature on every smartphone, adding a lot of value. However such an increase in volume is always followed by strong cost pressure, and this is what has happened over the last three years. The average cost of a fingerprint sensor has decreased from around $5 in 2013 to $3 in 2016, and even less for low-end technologies. And the pressure hasn’t gone away. Current technologies have now reached maturity, and are threatened by new technologies, which need lower cost to gain momentum. This is the case for ultrasonic detection, for instance.
For more information please visit our website: http://www.i-micronews.com/reports.html
In its new series of SiC MOSFETs, Rohm uses trench structures for 650V and 1200V products, while 1700V products use planar structures
After more than five years since SiC MOSFETs were first released, they are gradually penetrating different industries for power conversion applications. The market outlook is promising with a compound annual growth rate of 42% from 2015 to 2021. The forecast for 2017 is expected to be even better than previous years with increasingly positive signals from the industry.
Against this backdrop, Rohm offers a series of new SiC products at different voltages. It appears that it uses trench structures for 650V and 1200V products, while 1700V products use planar structures.
The SCT2H12NZGC11 is a 1700V SiC MOSFET from Rohm for industrial and commercial power application such as power supplies. The device offers a quite low on-resistance but very high current density and integrates the second generation high-voltage SiC power MOSFET dies, which now achieve 3.7A current.
Thanks to the die design the device’s cost is very competitive. The gate structure is very simple and the packaging is optimized to save costs.
The report presents a deep technology analysis of the packaging and components with images of the planar SiC structure.
More information on that report at http://www.i-micronews.com/reports.html
Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...Yole Developpement
Panasonic adopts a DFN 8x8 package for its normally-off GaN HEMT structure
System Plus Consulting unveils the first GaN HEMT from Panasonic assembled in a dual flat no-lead (DFN) 8x8 package. Panasonic decided to abandon the standard TO220 package, probably because of poor electrical performance. Thanks to its proprietary X-GaN transistor structure and new die design the company has managed to produce a very competitive normally-off component.
The new PGA26E19BA from Panasonic features a medium breakdown voltage of 600V for a current of 10A at 25°C, with very low on-resistance with respect to its competitors and the TO220 assembled component.The transistor is optimized to be used in power supplies and AC-DC, photovoltaic and motor inverters.
Littelfuse and Monolith Semiconductors, in collaboration with X-Fab, have released a 1st-generation, high-reliability MOSFET with the hope of making this silicon carbide product mainstream.
The market outlook for SiC devices is promising, with a compound annual growth rate (CAGR) of 28% from 2016 – 2020. This will increase to 40% from 2020 – 2022 due to growth among automotive and industrial applications. In total, the SiC market will exceed $1B in 2022. In the energy conversion sector, SiC devices have an actual value of $250M, which will increase by around 28% in 2022. The reason for this relates to market forces pushing for loss reduction, not only for the sake of improved efficiency but also for smaller packages.
More information on that report a http://www.systemplus.fr/reverse-costing-reports/littelfuse-silicon-carbide-mosfet-lcis1mo120e0080-1200v-25a-80mohms/
This document provides an analysis of Tesla's UBQ01B0 chip used for full self-driving capabilities. It includes a physical analysis of the die and packaging, an overview of the manufacturing process, and a cost analysis. The chip is a system-on-chip designed and produced by Tesla to power its driver-assist and autonomous driving features. It utilizes quad-core ARM processors alongside a GPU and NPU for processing sensor data and neural network operations. The analysis examines the chip's design and architecture at the physical, manufacturing, and cost levels.
Sensirion SGP30 Gas Sensor 2018 - teardown reverse costing report published b...system_plus
The first monolithic multi-gas sensor from Sensirion, with a unique and innovative design using metal oxide technology.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/sgp30-gas-sensor-from-sensirion/
Sensirion, a leading manufacturer of digital microsensors and systems, recently released a gas sensor designed for consumer and appliance applications: the SGP30 Multi-Pixel. The SGP30 gas sensor is a new kind of sensor which measures different gas types in any environment. With a DFN package volume under 5.5 mm3, this gas sensor can be embedded in a variety of low-power systems, including smartphones, tablets, and laptops.
The first 600V system-in-package half-bridge driver from STMicroelectronics integrating two GaN-based HEMTs.
More information: https://www.systemplus.fr/reverse-costing-reports/stmicroelectronics-mastergan1-half-bridge-driver/
Hikvision Intelligent Thermal Network Camera (DS-2TD2166-15 V1)system_plus
Dig deep into Hikvision’s AI-powered thermal network camera for security applications.
More information: https://www.systemplus.fr/reverse-costing-reports/hikvision-intelligent-thermal-network-camera-ds-2td2166-15-v1/
GaN Systems GS61004B GaN HEMT 2018 teardown reverse costing report published ...system_plus
There are only two main players in the low-voltage GaN HEMT market: EPC and GaN Systems. GaN Systems wants to compete with EPC, the market leader, by unveiling its latest device, the GS61004B. The GS61004B is a GaN-on-silicon HEMT transistor packaged in GaN Systems' unique GaNpx embedded die package. This package has no wire bonding and its design increases heat dissipation while simplifying the manufacturing process to reduce costs. A teardown analysis estimates the production costs for the epitaxy and package. The report also compares the GS61004B to standard 100V Si MOSFETs and the competition.
Safran Colibrys MS1010 and MEMSIC MXA2500M High-End Accelerometerssystem_plus
Detailed technology and cost analysis of the high-end single-axis and dual-axis accelerometers integrated in the STIM318 IMU.
More information: https://www.systemplus.fr/reverse-costing-reports/safran-colibrys-ms1010-and-memsic-mxa2500m-high-end-accelerometers/
IRJET- Modeling & Analysis of a 100CC I.C. Engine Connecting RODIRJET Journal
1) The document describes modeling and static structural analysis of a 100cc internal combustion engine connecting rod using SOLIDWORKS and ANSYS.
2) Various materials were analyzed including aluminum alloys, steel, and a metal matrix composite. The connecting rod was subjected to a 400N force.
3) Analysis found the metal matrix composite had the least deformation but higher cost, while an aluminum alloy provided good results at lower cost for connecting rods.
Sensonor STIM318 Inertial Measurement Unit (IMU)system_plus
Newest IMU with 9-axis detection and gyro bias instability of 0.3°/h from Sensonor.
More information: https://www.systemplus.fr/reverse-costing-reports/sensonor-stim318-inertial-measurement-unit-imu/
Deep dive analysis of the fourth generation of mid/high band front-end module for 4G and 5G from Broadcom.
More information : https://www.systemplus.fr/reverse-costing-reports/broadcom-afem-8200-pamid-in-the-apple-iphone-12-series/
Experimental Stress Analysis and Optimization of Connecting RodIRJET Journal
The document discusses experimental stress analysis and topology optimization of a connecting rod. It begins with modeling the existing connecting rod using CAD software and performing finite element analysis to determine stresses and deformation. Topology optimization is then used to remove material from low-stress regions to reduce weight without compromising strength. The optimized model is again analyzed using FEA. Finally, the optimization results are implemented on the physical connecting rod using EDM machining. Strain gauges are mounted and experimental testing is conducted to correlate results with the FEA analysis. The optimization reduced the connecting rod weight from 2.351kg to 2.240kg while von Mises stresses and deflections remained within acceptable limits.
EPC’s 70 V ePower stage with separate and independent high and low side control inputs.
More information: https://www.systemplus.fr/reverse-costing-reports/epc2152-half-bridge-monolithic-gan-ic/
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...Yole Developpement
Dive deep into the technology and cost of GaN-on-silicon HEMTs from EPC, Transphorm, GaN Systems, Panasonic and Texas Instruments.
More information on that report at https://www.i-micronews.com/report/product/gan-on-silicon-transistor-comparison-2018.html
Power Discrete Packaging Comparison 2018 report published by System Plus Cons...system_plus
A cost-oriented overview of evolutionary trends in power discrete packages, from mW to kW.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/power-discrete-packaging-comparison-2018/
Broadcom AFEM-8072 – Mid and High Band LTE RF Front-End Module (FEM) - teardo...system_plus
The first mid/high band Long Term Evolution (LTE) Radio Frequency (RF) FEM in the Apple iPhone X integrates the latest generation of Film Bulk Acoustic Resonator (FBAR) technology with advanced and innovative packaging.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/broadcom-afem-8072-mid-and-high-band-lte-rf-front-end-module-fem/
Optimization in Piston Design for High-Speed EngineIRJET Journal
This document summarizes research on optimizing piston design for high-speed engines. It describes designing a piston and components using the advanced material Ti-6Al-4V that can withstand the high temperatures and pressures of a high-speed engine. The piston and components were modeled in Autodesk Fusion 360 and analyzed for von Mises stress, safety factors, strain, and displacements under simulated high-speed engine conditions. The results showed safety factors above 3, indicating the optimized piston design would be suitable for use in a high-speed engine.
Bluetooth 5: System-on-Chip Comparison 2018system_plus
A cost-oriented report on cutting edge components from NXP, Qualcomm, Dialog and Nordic, all dedicated to the fifth generation Bluetooth protocol.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/bluetooth-5-system-on-chip-comparison-2018/
This document summarizes the design, static analysis, and modal analysis of a connecting rod for a four-stroke spark ignition engine using three different materials: structural steel, titanium alloy, and aluminum alloy. The connecting rod was modeled in SolidWorks and analyzed in ANSYS to determine von Mises stresses, shear stresses, deformation, natural frequencies, and safety factors. The results showed that titanium alloy had the highest safety factor and was therefore the best material for withstanding the loads on the connecting rod, though it was heavier than aluminum alloy. Aluminum alloy was the second best choice. Structural steel performed the poorest with the highest weight.
Similar to STMicroelectronics 1200V SiC MOSFET STC30N120 - teardown reverse costing report published by Yole Developpement (20)
Computing and AI technologies for mobile and consumer applications 2021 - SampleYole Developpement
Penetrating everyday products will see the market for AI technologies for the consumer market reach $5.6B in 2026.
More information : https://www.i-micronews.com/products/computing-and-ai-technologies-for-mobile-and-consumer-applications-2021/
For the first time, the processor monitor is including FPGA, CPU, GPU, and APU including all the IDMs, fabless companies, and foundries in the business.
More information : https://www.i-micronews.com/products/application-processor-quarterly-market-monitor/
For the first time in its history, the automotive industry must face new industrial and technological
challenges while undergoing dramatic changes in its value chain.
More information: https://www.i-micronews.com/products/automotive-semiconductor-trends-2021/
MicroLED Displays - Market, Industry and Technology Trends 2021Yole Developpement
Strong momentum for MicroLED with progress on all fronts. Cost is the biggest challenge, but Apple and Samsung are carving paths toward the consumer.
More information; https://www.i-micronews.com/products/microled-displays-market-industry-and-technology-trends-2021/
Industrial, consumer, and automotive applications are driving the adoption of neuromorphic computing and sensing technologies. The first products are now hitting the market.
More information: https://www.i-micronews.com/products/neuromorphic-computing-and-sensing-2021/
Beyond communication, silicon photonics is penetrating consumer and automotive – heading to $1.1B in 2026.
More information: https://www.i-micronews.com/products/silicon-photonics-2021/
Semiconductor technologies will enable increased mobility and communication for the soldier of the future. This market will reach $17.5B in 2030+.
More information: https://www.i-micronews.com/products/future-soldier-technologies-2021/
This report from Yole Développement analyzes the high-end performance packaging market. It defines high-end performance packaging as technologies that provide high IO density (≥16/mm2) and fine IO pitch (≤130μm). The report aims to identify relevant technologies, analyze market drivers and challenges, describe technology trends and roadmaps, examine the supply chain landscape, and provide market forecasts. It evaluates the market by technology, end application, and region. The report also profiles key players' technology roadmaps and analyzes intellectual property in the 3D SoC hybrid bonding space.
5G’s Impact on RF Front-End and Connectivity for Cellphones 2020Yole Developpement
An intensifying US-China competition for RF technology supremacy.
More information on: https://www.i-micronews.com/products/5gs-impact-on-rf-front-end-and-connectivity-for-cellphones-2020/
In the ultrasound module market, CMUT and PMUT are growing two times faster in medical and consumer applications.
More information: https://www.i-micronews.com/products/ultrasound-sensing-technologies-2020/
The entrance of Chinese players and the rise of new technical solutions are poised to trigger profound changes in the memory business.
More information on: https://www.i-micronews.com/products/status-of-the-memory-industry-2020/
GaAs Wafer and Epiwafer Market: RF, Photonics, LED, Display and PV Applicatio...Yole Developpement
The report provides a market analysis of the GaAs wafer and epiwafer markets from 2019 to 2025. It forecasts that the GaAs wafer market will increase from $200 million in 2019 to $348 million in 2025, with the largest application segments being RF, photonics, and LED. The open epiwafer market is also analyzed, with IQE and VPEC together comprising almost 80% of the $262 million total market in 2019. Key drivers of growth are discussed for various applications such as 5G adoption for RF and increasing use of VCSELs for 3D sensing and LiDAR.
Status of the Radar Industry: Players, Applications and Technology Trends 2020Yole Developpement
Worth more than $20B in 2019, the radar industry is experiencing a major transformation prior to entering the commercial era.
Learn more about the report here: https://www.i-micronews.com/products/status-of-the-radar-industry-players-applications-and-technology-trends-2020/
GaN RF Market: Applications, Players, Technology and Substrates 2020Yole Developpement
Driven by military applications and 5G telecom infrastructure, the GaN RF market continues growing.
Learn more about the report here: https://www.i-micronews.com/products/gan-rf-market-applications-players-technology-and-substrates-2020/
Pressure, inertial, MEMS ultrasound, microfluidic chips and other sensors are driving the growth of the life sciences and healthcare market.
More information: https://www.i-micronews.com/products/biomems-market-and-technology-2020/
Market will more than double by 2025 driven by heavy investments in data centers.
More information: https://www.i-micronews.com/products/optical-transceivers-for-datacom-telecom-2020/
COVID-19 is shaking up the diagnostics industry and will have both short- and long-term impact.
More information: https://www.i-micronews.com/products/point-of-need-2020-including-pcr-based-testing/
Pluggable transceivers in high volume production. Co-packaged optics in line of sight.
More information on: https://www.i-micronews.com/products/silicon-photonics-2020/
The one million robotic vehicle milestone will be reached by end of the decade: The industrial phase has been launched.
More information on: https://www.i-micronews.com/products/sensors-for-robotic-mobility-2020/
Generating privacy-protected synthetic data using Secludy and MilvusZilliz
During this demo, the founders of Secludy will demonstrate how their system utilizes Milvus to store and manipulate embeddings for generating privacy-protected synthetic data. Their approach not only maintains the confidentiality of the original data but also enhances the utility and scalability of LLMs under privacy constraints. Attendees, including machine learning engineers, data scientists, and data managers, will witness first-hand how Secludy's integration with Milvus empowers organizations to harness the power of LLMs securely and efficiently.
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Simplify your search for a reliable Python development partner! This list presents the top 10 trusted US providers offering comprehensive Python development services, ensuring your project's success from conception to completion.
The Microsoft 365 Migration Tutorial For Beginner.pptxoperationspcvita
This presentation will help you understand the power of Microsoft 365. However, we have mentioned every productivity app included in Office 365. Additionally, we have suggested the migration situation related to Office 365 and how we can help you.
You can also read: https://www.systoolsgroup.com/updates/office-365-tenant-to-tenant-migration-step-by-step-complete-guide/
Northern Engraving | Nameplate Manufacturing Process - 2024Northern Engraving
Manufacturing custom quality metal nameplates and badges involves several standard operations. Processes include sheet prep, lithography, screening, coating, punch press and inspection. All decoration is completed in the flat sheet with adhesive and tooling operations following. The possibilities for creating unique durable nameplates are endless. How will you create your brand identity? We can help!
How to Interpret Trends in the Kalyan Rajdhani Mix Chart.pdfChart Kalyan
A Mix Chart displays historical data of numbers in a graphical or tabular form. The Kalyan Rajdhani Mix Chart specifically shows the results of a sequence of numbers over different periods.
Discover top-tier mobile app development services, offering innovative solutions for iOS and Android. Enhance your business with custom, user-friendly mobile applications.
What is an RPA CoE? Session 1 – CoE VisionDianaGray10
In the first session, we will review the organization's vision and how this has an impact on the COE Structure.
Topics covered:
• The role of a steering committee
• How do the organization’s priorities determine CoE Structure?
Speaker:
Chris Bolin, Senior Intelligent Automation Architect Anika Systems
HCL Notes und Domino Lizenzkostenreduzierung in der Welt von DLAUpanagenda
Webinar Recording: https://www.panagenda.com/webinars/hcl-notes-und-domino-lizenzkostenreduzierung-in-der-welt-von-dlau/
DLAU und die Lizenzen nach dem CCB- und CCX-Modell sind für viele in der HCL-Community seit letztem Jahr ein heißes Thema. Als Notes- oder Domino-Kunde haben Sie vielleicht mit unerwartet hohen Benutzerzahlen und Lizenzgebühren zu kämpfen. Sie fragen sich vielleicht, wie diese neue Art der Lizenzierung funktioniert und welchen Nutzen sie Ihnen bringt. Vor allem wollen Sie sicherlich Ihr Budget einhalten und Kosten sparen, wo immer möglich. Das verstehen wir und wir möchten Ihnen dabei helfen!
Wir erklären Ihnen, wie Sie häufige Konfigurationsprobleme lösen können, die dazu führen können, dass mehr Benutzer gezählt werden als nötig, und wie Sie überflüssige oder ungenutzte Konten identifizieren und entfernen können, um Geld zu sparen. Es gibt auch einige Ansätze, die zu unnötigen Ausgaben führen können, z. B. wenn ein Personendokument anstelle eines Mail-Ins für geteilte Mailboxen verwendet wird. Wir zeigen Ihnen solche Fälle und deren Lösungen. Und natürlich erklären wir Ihnen das neue Lizenzmodell.
Nehmen Sie an diesem Webinar teil, bei dem HCL-Ambassador Marc Thomas und Gastredner Franz Walder Ihnen diese neue Welt näherbringen. Es vermittelt Ihnen die Tools und das Know-how, um den Überblick zu bewahren. Sie werden in der Lage sein, Ihre Kosten durch eine optimierte Domino-Konfiguration zu reduzieren und auch in Zukunft gering zu halten.
Diese Themen werden behandelt
- Reduzierung der Lizenzkosten durch Auffinden und Beheben von Fehlkonfigurationen und überflüssigen Konten
- Wie funktionieren CCB- und CCX-Lizenzen wirklich?
- Verstehen des DLAU-Tools und wie man es am besten nutzt
- Tipps für häufige Problembereiche, wie z. B. Team-Postfächer, Funktions-/Testbenutzer usw.
- Praxisbeispiele und Best Practices zum sofortigen Umsetzen
Connector Corner: Seamlessly power UiPath Apps, GenAI with prebuilt connectorsDianaGray10
Join us to learn how UiPath Apps can directly and easily interact with prebuilt connectors via Integration Service--including Salesforce, ServiceNow, Open GenAI, and more.
The best part is you can achieve this without building a custom workflow! Say goodbye to the hassle of using separate automations to call APIs. By seamlessly integrating within App Studio, you can now easily streamline your workflow, while gaining direct access to our Connector Catalog of popular applications.
We’ll discuss and demo the benefits of UiPath Apps and connectors including:
Creating a compelling user experience for any software, without the limitations of APIs.
Accelerating the app creation process, saving time and effort
Enjoying high-performance CRUD (create, read, update, delete) operations, for
seamless data management.
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Russell Alfeche, Technology Leader, RPA at qBotic and UiPath MVP
Charlie Greenberg, host
Programming Foundation Models with DSPy - Meetup SlidesZilliz
Prompting language models is hard, while programming language models is easy. In this talk, I will discuss the state-of-the-art framework DSPy for programming foundation models with its powerful optimizers and runtime constraint system.
AppSec PNW: Android and iOS Application Security with MobSFAjin Abraham
Mobile Security Framework - MobSF is a free and open source automated mobile application security testing environment designed to help security engineers, researchers, developers, and penetration testers to identify security vulnerabilities, malicious behaviours and privacy concerns in mobile applications using static and dynamic analysis. It supports all the popular mobile application binaries and source code formats built for Android and iOS devices. In addition to automated security assessment, it also offers an interactive testing environment to build and execute scenario based test/fuzz cases against the application.
This talk covers:
Using MobSF for static analysis of mobile applications.
Interactive dynamic security assessment of Android and iOS applications.
Solving Mobile app CTF challenges.
Reverse engineering and runtime analysis of Mobile malware.
How to shift left and integrate MobSF/mobsfscan SAST and DAST in your build pipeline.
For the full video of this presentation, please visit: https://www.edge-ai-vision.com/2024/06/temporal-event-neural-networks-a-more-efficient-alternative-to-the-transformer-a-presentation-from-brainchip/
Chris Jones, Director of Product Management at BrainChip , presents the “Temporal Event Neural Networks: A More Efficient Alternative to the Transformer” tutorial at the May 2024 Embedded Vision Summit.
The expansion of AI services necessitates enhanced computational capabilities on edge devices. Temporal Event Neural Networks (TENNs), developed by BrainChip, represent a novel and highly efficient state-space network. TENNs demonstrate exceptional proficiency in handling multi-dimensional streaming data, facilitating advancements in object detection, action recognition, speech enhancement and language model/sequence generation. Through the utilization of polynomial-based continuous convolutions, TENNs streamline models, expedite training processes and significantly diminish memory requirements, achieving notable reductions of up to 50x in parameters and 5,000x in energy consumption compared to prevailing methodologies like transformers.
Integration with BrainChip’s Akida neuromorphic hardware IP further enhances TENNs’ capabilities, enabling the realization of highly capable, portable and passively cooled edge devices. This presentation delves into the technical innovations underlying TENNs, presents real-world benchmarks, and elucidates how this cutting-edge approach is positioned to revolutionize edge AI across diverse applications.
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The Seller shall not be liable for any delay in performance directly or indirectly caused by or resulting from acts of nature, fire, flood, accident, riot, war, government intervention, embargoes, strikes, labor difficulties,
equipment failure, late deliveries by suppliers or other difficulties which are beyond the control, and not the fault of the Seller.
6. Protection of the Seller’s IPR
6.1 All the IPR attached to the Products are and remain the property of the Seller and are protected under French and international copyright law and conventions.
6.2 The Buyer agreed not to disclose, copy, reproduce, redistribute, resell or publish the Product, or any part of it to any other party other than employees of its company. The Buyer shall have the right to use the
Products solely for its own internal information purposes. In particular, the Buyer shall therefore not use the Product for purposes such as:
- Information storage and retrieval systems;
- Recordings and re-transmittals over any network (including any local area network);
- Use in any timesharing, service bureau, bulletin board or similar arrangement or public display;
- Posting any Product to any other online service (including bulletin boards or the Internet);
- Licensing, leasing, selling, offering for sale or assigning the Product.
6.3 The Buyer shall be solely responsible towards the Seller of all infringements of this obligation, whether this infringement comes from its employees or any person to whom the Buyer has sent the Products and shall
personally take care of any related proceedings, and the Buyer shall bear related financial consequences in their entirety.
6.4 The Buyer shall define within its company point of contact for the needs of the contract. This person will be the recipient of each new report in PDF format. This person shall also be responsible for respect of the
copyrights and will guaranty that the Products are not disseminated out of the company.
6.5 In the context of annual subscriptions, the person of contact shall decide who within the Buyer, shall be entitled to access on line the reports on I-micronews.com. In this respect, the Seller will give the Buyer a
maximum of 10 password, unless the multiple sites organization of the Buyer requires more passwords. The Seller reserves the right to check from time to time the correct use of this password.
6.6 In the case of a multisite, multi license, only the employee of the buyer can access the report or the employee of the companies in which the buyer have 100% shares. As a matter of fact the investor of a company,
the joint venture done with a third party etc..cannot access the report and should pay a full license price.
7. Termination
7.1 If the Buyer cancels the order in whole or in part or postpones the date of mailing, the Buyer shall indemnify the Seller for the entire costs that have been incurred as at the date of notification by the Buyer of such
delay or cancellation. This may also apply for any other direct or indirect consequential loss that may be borne by the Seller, following this decision.
7.2 In the event of breach by one Party under these conditions or the order, the non-breaching Party may send a notification to the other by recorded delivery letter upon which, after a period of thirty (30) days without
solving the problem, the non-breaching Party shall be entitled to terminate all the pending orders, without being liable for any compensation.
8. Miscellaneous
All the provisions of these Terms and Conditions are for the benefit of the Seller itself, but also for its licensors, employees and agents. Each of them is entitled to assert and enforce those provisions against the Buyer.
Any notices under these Terms and Conditions shall be given in writing. They shall be effective upon receipt by the other Party.
The Seller may, from time to time, update these Terms and Conditions and the Buyer, is deemed to have accepted the latest version of these terms and conditions, provided they have been communicated to him in due
time.
9. Governing law and jurisdiction
9.1 Any dispute arising out or linked to these Terms and Conditions or to any contract (orders) entered into in application of these Terms and Conditions shall be settled by the French Commercial Courts of Lyon, which
shall have exclusive jurisdiction upon such issues.
9.2 French law shall govern the relation between the Buyer and the Seller, in accordance with these Terms and Conditions.
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