A cost-oriented overview of evolutionary trends in power discrete packages, from mW to kW.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/power-discrete-packaging-comparison-2018/
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...Yole Developpement
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The CAS120M12BM2 from CREE Semiconductor is a power module of 2 transistors with a breakdown voltage of 1200V for a current of 138A (90°C), an ultra low on-resistance (13mΩ), a fast switching speed and a fast reverse recovery.
The CAS120M12BM2 integrates 12 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET dies with a current of 23A (90°C) for 10 sq mm, and 24x Z-Rec diode of 4.8 sq mm are integrated in the power module. The Z-Rec diode is a mix between a Schottky and junction barrier diode....
The first 600V system-in-package half-bridge driver from STMicroelectronics integrating two GaN-based HEMTs.
More information: https://www.systemplus.fr/reverse-costing-reports/stmicroelectronics-mastergan1-half-bridge-driver/
This report analyzes Samsung's 12GB LPDDR5 mobile memory. It includes a full physical analysis of the memory package and die. High resolution images show the die, DRAM cells, and cross-sections. The manufacturing process flow and cost analysis are used to estimate production costs. The component cost includes die manufacturing, packaging, and testing. A comparison is made between LPDDR4 and LPDDR5 physical characteristics and manufacturing processes. This report provides a comprehensive technical and cost analysis of Samsung's latest low power DRAM technology.
Epson PrecisionCore Printhead with MicroTFP Inkjet Diessystem_plus
For the first time, Epson integrates thin film PZT MEMS into its office inkjet printer.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/epson-precisioncore-printhead-with-microtfp-inkjet-dies/
The Audi A8 zFAS ADAS Platform by Aptivsystem_plus
The first level 3 autonomous driving system, designed by Audi and manufactured by Aptiv (Delphi), integrates high-performance processors from Nvidia (Tegra K1), Altera (Cyclon V), Infineon (Aurix), and Mobileye (EyeQ3 image processor)
Reverse Costing - Structure, process and cost report - find more here: https://www.systemplus.fr/reverse-costing-reports/the-audi-a8-zfas-adas-platform-by-aptiv/
Discover Infineon‘s first double sided cooling power module for automotive.
More information on that report at https://www.i-micronews.com/category-listing/product/infineon-ff400r07a01e3-double-side-cooled-igbt-module.html
Take a look at the fifth generation of EPC’s low voltage transistor
The low voltage GaN device market is increasingly important, and Efficient Power Conversion Corporation (EPC) is a major player in low voltage GaN-on-silicon high-electron-mobility transistor (HEMT) devices. 100V GaN HEMTs are a very new technology but they already compete with silicon transistors, especially in the field of megahertz high frequency applications.
System Plus Consulting has investigated the company’s EPC2045 device, its latest driving 100V for applications such as single-stage 48V converters, USB-C data and power connectors, LiDAR sensors, point-of-load converters and loads in open rack server architectures.
With its new transistor and GaN epitaxy design, the EPC2045 achieves a breakdown voltage of 100V for a current of 16A at 25°C, and a very low RdsOn on-resistance of 7mΩ compared to the previous generation.
The chip-scale packaging of EPC products reduces the final device cost and decreases its inductance, bringing advantages not only with respect to competitors in GaN, but also silicon.
Compared to silicon transistors, GaN process developments have significantly lowered capacitance. This translates into lower gate drive losses and lower device switching losses at higher frequencies for the same on-resistance and voltage rating.
More information on that report at http://www.i-micronews.com/reports.html
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Invertersystem_plus
Multiple optimized packaging innovations for this automotive power module from Vitesco Technologies.
More : https://www.systemplus.fr/reverse-costing-reports/vitesco-technologies-power-module-in-jaguar-i-pace-inverter/
CREE 1200V SiC Module teardown reverse costing report published by Yole Devel...Yole Developpement
In 3 years, the performance/cost ratio of SiC MOSFET has been multiplied by 3.
The CAS120M12BM2 from CREE Semiconductor is a power module of 2 transistors with a breakdown voltage of 1200V for a current of 138A (90°C), an ultra low on-resistance (13mΩ), a fast switching speed and a fast reverse recovery.
The CAS120M12BM2 integrates 12 2nd generation high-voltage SiC (Silicon Carbide) power MOSFET dies with a current of 23A (90°C) for 10 sq mm, and 24x Z-Rec diode of 4.8 sq mm are integrated in the power module. The Z-Rec diode is a mix between a Schottky and junction barrier diode....
The first 600V system-in-package half-bridge driver from STMicroelectronics integrating two GaN-based HEMTs.
More information: https://www.systemplus.fr/reverse-costing-reports/stmicroelectronics-mastergan1-half-bridge-driver/
This report analyzes Samsung's 12GB LPDDR5 mobile memory. It includes a full physical analysis of the memory package and die. High resolution images show the die, DRAM cells, and cross-sections. The manufacturing process flow and cost analysis are used to estimate production costs. The component cost includes die manufacturing, packaging, and testing. A comparison is made between LPDDR4 and LPDDR5 physical characteristics and manufacturing processes. This report provides a comprehensive technical and cost analysis of Samsung's latest low power DRAM technology.
Epson PrecisionCore Printhead with MicroTFP Inkjet Diessystem_plus
For the first time, Epson integrates thin film PZT MEMS into its office inkjet printer.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/epson-precisioncore-printhead-with-microtfp-inkjet-dies/
The Audi A8 zFAS ADAS Platform by Aptivsystem_plus
The first level 3 autonomous driving system, designed by Audi and manufactured by Aptiv (Delphi), integrates high-performance processors from Nvidia (Tegra K1), Altera (Cyclon V), Infineon (Aurix), and Mobileye (EyeQ3 image processor)
Reverse Costing - Structure, process and cost report - find more here: https://www.systemplus.fr/reverse-costing-reports/the-audi-a8-zfas-adas-platform-by-aptiv/
Discover Infineon‘s first double sided cooling power module for automotive.
More information on that report at https://www.i-micronews.com/category-listing/product/infineon-ff400r07a01e3-double-side-cooled-igbt-module.html
Take a look at the fifth generation of EPC’s low voltage transistor
The low voltage GaN device market is increasingly important, and Efficient Power Conversion Corporation (EPC) is a major player in low voltage GaN-on-silicon high-electron-mobility transistor (HEMT) devices. 100V GaN HEMTs are a very new technology but they already compete with silicon transistors, especially in the field of megahertz high frequency applications.
System Plus Consulting has investigated the company’s EPC2045 device, its latest driving 100V for applications such as single-stage 48V converters, USB-C data and power connectors, LiDAR sensors, point-of-load converters and loads in open rack server architectures.
With its new transistor and GaN epitaxy design, the EPC2045 achieves a breakdown voltage of 100V for a current of 16A at 25°C, and a very low RdsOn on-resistance of 7mΩ compared to the previous generation.
The chip-scale packaging of EPC products reduces the final device cost and decreases its inductance, bringing advantages not only with respect to competitors in GaN, but also silicon.
Compared to silicon transistors, GaN process developments have significantly lowered capacitance. This translates into lower gate drive losses and lower device switching losses at higher frequencies for the same on-resistance and voltage rating.
More information on that report at http://www.i-micronews.com/reports.html
SPR21610 - Vitesco Technologies Power Module in Jaguar I-PACE Invertersystem_plus
Multiple optimized packaging innovations for this automotive power module from Vitesco Technologies.
More : https://www.systemplus.fr/reverse-costing-reports/vitesco-technologies-power-module-in-jaguar-i-pace-inverter/
UnitedSiC UJN1205K 1200V SiC JFET report published by System Plus Consultingsystem_plus
Discover the technological choices made by United Silicon Carbide Inc. (UnitedSiC) for its most advanced SiC JFET and its associated features
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/unitedsic-ujn1205k-1200v-sic-jfet/
The document provides a full reverse costing analysis of the Hamamatsu C12880MA microspectrometer. It includes a physical analysis of the package, reflective grating, image sensor, and die cross-section. The manufacturing process flow is examined, covering the front-end IC process, wafer fabrication, sensor layers process, grating process, and packaging. A cost analysis is presented for the front-end, image sensor die, grating, packaging, and total component cost. The report also provides a selling price analysis and compares the C12880MA to other spectrometer technologies.
Qorvo QPF4006 39GHz GaN MMIC Front End Modulesystem_plus
The first MMIC FEM targeting 5G base stations and terminals using a 0.15µm GaN-on-SiC process.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/qorvo-qpf4006-39ghz-gan-mmic-front-end-module/
Deep dive analysis of the fourth generation of mid/high band front-end module for 4G and 5G from Broadcom.
More information : https://www.systemplus.fr/reverse-costing-reports/broadcom-afem-8200-pamid-in-the-apple-iphone-12-series/
Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...Yole Developpement
Panasonic adopts a DFN 8x8 package for its normally-off GaN HEMT structure
System Plus Consulting unveils the first GaN HEMT from Panasonic assembled in a dual flat no-lead (DFN) 8x8 package. Panasonic decided to abandon the standard TO220 package, probably because of poor electrical performance. Thanks to its proprietary X-GaN transistor structure and new die design the company has managed to produce a very competitive normally-off component.
The new PGA26E19BA from Panasonic features a medium breakdown voltage of 600V for a current of 10A at 25°C, with very low on-resistance with respect to its competitors and the TO220 assembled component.The transistor is optimized to be used in power supplies and AC-DC, photovoltaic and motor inverters.
Toyota Prius 4 PCU Power Modules - teardown reverse costing report published ...Yole Developpement
Toyota Prius 4 PCU modules integrate IGBT and freewheeling diodes onto innovative double side cooling packaging for hybrid electric vehicles, allowing better thermal dissipation, modularity and scalability of the system.
For its latest Prius 4 Toyota has designed a new power control unit (PCU). The PCU has two types of power module, one for the motor inverter and the other for the boost converter and generator inverter.
PCU power module toyota prius 4 system plus consulting
The module integrates Toyota’s latest power card packaging, with double side cooling. It allows the modularity and scalability of the PCU’s inverters to be optimized and also enables better thermal dissipation thanks to the use of copper heatsinks and spacers. The power cards can be placed in parallel to have a single thermal dissipation circuit in a limited space.
This package includes two pairs of wire bonded IGBTs and freewheeling diodes and is plastic molded.
This report offers a deep technical analysis of the module structure, packaging, and of the IGBT and diode die.
Based on a complete teardown analysis, the report also provides an estimation of the production cost of the package, IGBT and diode.
Moreover, the report compares the Prius 4 PCU with the Chevrolet Volt power module, analyzing the technical choices of the packaging and the die. This comparison highlights the huge differences in design and manufacturing process and their impact on device size and production cost.
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...system_plus
The first 80V half-bridge GaN power stage from TI, with innovative packaging.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/texas-instruments-lmg5200-gan-power-stage/
This document provides an analysis of Tesla's UBQ01B0 chip used for full self-driving capabilities. It includes a physical analysis of the die and packaging, an overview of the manufacturing process, and a cost analysis. The chip is a system-on-chip designed and produced by Tesla to power its driver-assist and autonomous driving features. It utilizes quad-core ARM processors alongside a GPU and NPU for processing sensor data and neural network operations. The analysis examines the chip's design and architecture at the physical, manufacturing, and cost levels.
Broadcom AFEM-8072 – Mid and High Band LTE RF Front-End Module (FEM) - teardo...system_plus
The first mid/high band Long Term Evolution (LTE) Radio Frequency (RF) FEM in the Apple iPhone X integrates the latest generation of Film Bulk Acoustic Resonator (FBAR) technology with advanced and innovative packaging.
More information on that report at http://www.systemplus.fr/reverse-costing-reports/broadcom-afem-8072-mid-and-high-band-lte-rf-front-end-module-fem/
2-Axis Gyroscopes for Optical Image Stabilization: STMicroelectronics L2G2IS ...Yole Developpement
Complete reports and comparison of the latest generation products for smartphones from the leading optical image stabilization gyro players.
2-Axis Gyroscopes for Optical Image Stabilization (OIS) constitute a market where 123 million units were shipped in 2015, according to Yole Développement. This market originates only from high-end smartphones and two players share most of it: InvenSense, with 49%, and STMicroelectronics, with 39%.
The 2-axis gyroscopes are located inside the camera module of high-end smartphones. The main constraints are a small footprint and, more importantly, thinness.
Previously, thickness was the same as standard land grid array (LGA) or quad flat no-leads (QFN) package, close to 1mm. Now the standard is 0.65mm, which products from both InvenSense and STMicroelectronics attain.
InvenSense was first, with the IDG-2030, a 2.3x2.3x0.65mm gyroscope, which is still the smallest on the market. Since its introduction we found it in several smartphones from various manufacturers. The IDG-2030 uses the same Nasiri platform as other InvenSense inertial devices, with wafer-level integration of the MEMS sensor on top of the application specific integrated circuit (ASIC), thus providing only one die in the final LGA package.
Months later, STMicroelectronics released the L2G2IS, which shares the same dimensions. The device is manufactured using the same THELMA process as all STMicroelectronics inertial devices. The THELMA platform involves a two-die approach that is challenging for very thin package integration. However, both players now offer very low-cost gyros thanks to die size reduction and process optimization.
Both gyroscopes analyzed are 2-axis X, Y (Pitch, Roll). The two reports can be purchased separately or together in order to compare the technology and pricing of the main smartphone OIS gyro players, including previous generation products.
More information on that report at http://www.i-micronews.com/reports.html
GaN Systems GS61004B GaN HEMT 2018 teardown reverse costing report published ...system_plus
There are only two main players in the low-voltage GaN HEMT market: EPC and GaN Systems. GaN Systems wants to compete with EPC, the market leader, by unveiling its latest device, the GS61004B. The GS61004B is a GaN-on-silicon HEMT transistor packaged in GaN Systems' unique GaNpx embedded die package. This package has no wire bonding and its design increases heat dissipation while simplifying the manufacturing process to reduce costs. A teardown analysis estimates the production costs for the epitaxy and package. The report also compares the GS61004B to standard 100V Si MOSFETs and the competition.
In its new series of SiC MOSFETs, Rohm uses trench structures for 650V and 1200V products, while 1700V products use planar structures
After more than five years since SiC MOSFETs were first released, they are gradually penetrating different industries for power conversion applications. The market outlook is promising with a compound annual growth rate of 42% from 2015 to 2021. The forecast for 2017 is expected to be even better than previous years with increasingly positive signals from the industry.
Against this backdrop, Rohm offers a series of new SiC products at different voltages. It appears that it uses trench structures for 650V and 1200V products, while 1700V products use planar structures.
The SCT2H12NZGC11 is a 1700V SiC MOSFET from Rohm for industrial and commercial power application such as power supplies. The device offers a quite low on-resistance but very high current density and integrates the second generation high-voltage SiC power MOSFET dies, which now achieve 3.7A current.
Thanks to the die design the device’s cost is very competitive. The gate structure is very simple and the packaging is optimized to save costs.
The report presents a deep technology analysis of the packaging and components with images of the planar SiC structure.
More information on that report at http://www.i-micronews.com/reports.html
SiGe based millimeter-wave chipset commercially available for
backhaul applications with beamforming capability.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/peraso-x710-chipset-60ghz-outdoor-wireless-broadband-solution/
The 1st generation 1200V SiC MOSFET device from STMicroelectronics has good current density at a very competitive cost
The STC30N120 is the first generation 1200V SiC MOSFET device from STMicroelectronics. The device has a planar structure and a design that allows good electrical performance, such as high current density. Moreover, the supply chain and manufacturing choices lead to a very competitive cost.
The device is suitable for high power applications like motor drives, inverters, DC-DC converters and power supplies.
The STC30N120 integrates first generation high-voltage SiC power MOSFET dies in a dedicated discrete package.
The device is assumed to operate at very high temperature, up to 200°C, and to have an on-resistance of 90mΩ, with generally standard SiC manufacturing technology.
The report goes into depth in its analysis of the packaging and the components, with images of the complex planar SiC structure.
It also includes production cost analysis and detailed comparison with Rohm and Wolfspeed’s SiC MOSFETs and with 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.
For more information, please visit our website: http://www.i-micronews.com/reports.html
LG Display Medianav ECU Available in the Dacia Dustersystem_plus
A competitive high resolution, high luminance and wide viewing angle automotive display.
Reverse Costing - Structure, process and cost report - find more here: https://www.systemplus.fr/reverse-costing-reports/lg-display-medianav-ecu-available-in-the-dacia-duster/
World’s first 76-81 GHz automotive single-chip radar in a System-on-Chip device with integrated Antenna-in-Package using Fan-Out packaging technology.
Reverse Costing - Structure, process and cost report by System Plus Consulting - find more here: https://www.systemplus.fr/reverse-costing-reports/mediatek-autus-r10-mt2706-77-79-ghz-ewlbaip-radar-chipset/
The first 3-Axis MEMS Gyroscope to meet Automotive AEC-Q100 qualification
MEMS are getting broadly adopted in the automotive industry and non-safety applications like in-dash navigation are now requiring low-cost and small footprint components.
The A3G4250D is a low power consumption MEMS gyroscope which is the first 3-axis gyroscope to have met the industry-standard qualification for automotive integrated circuits (AEC-Q100).
This 3-axis gyroscope for automotive applications measures angular rates up to ±245 dps. It has been designed and produced using the same manufacturing process (THELMA) than consumer products in order to get full benefit of STMicroelectronics 10 years of consumer electronic market.
Assembled in a 4.0 x 4.0 x 1.1mm package, it embeds an 8-bit temperature sensor and operates within an extended temperature range from -40 to 85°C.
It is suitable for applications including in-dash navigation, telematics and vehicle tolling systems, motion control with MMI (man-machine interface), appliances and robotics.
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...Yole Developpement
Panasonic’s first 600V GaN HEMT has an innovative structure designed to integrate a normally-off transistor in a standard package, without a cascade structure
System Plus Consulting unveils Panasonic’s first GaN HEMT, assembled in a standard TO220 package. Thanks to its specific die design, the component is normally-off without using a cascade structure or special packaging.
Panasonic’s PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.
The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.
Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.
Moreover, this report offers a comparison with GaN Systems’ GS66504B and Transphorm’s GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.
For more information visite us at: http://www.i-micronews.com/reports.html
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...Yole Developpement
Dive deep into the technology and cost of GaN-on-silicon HEMTs from EPC, Transphorm, GaN Systems, Panasonic and Texas Instruments.
More information on that report at https://www.i-micronews.com/report/product/gan-on-silicon-transistor-comparison-2018.html
Toshiba first GaN on Silicon LED teardown reverse costing report by Yole Deve...Yole Developpement
Toshiba has recently released its first GaN on Silicon LED in a 6450 standard package with several new features.
The TL1F1 LED of Toshiba are produced on a cheap 8” silicon substrate in a standard power silicon facility from Toshiba. The integration in a standard facility has been facilitated by a smart bonding process without gold.
Moreover, a significant work has been done to thin epitaxial layer in GaN. The GaN thickness approximates the one on Sapphire LED.
A low current density per sq cm is obtained, estimated at 20A/sqcm, lower than sapphire LED. However, the 2nd generation of GaN on Si LED produces 30% more lumen.
More information on that report at http://www.i-micronews.com/reports/Toshiba-GaN-Silicon-LED/14/413/
SP20569 - IRay T3S Thermal Camera for Smartphonesystem_plus
Multiple optimized packaging innovations for this automotive power module from Vitesco Technologies.
More : https://www.systemplus.fr/reverse-costing-reports/iray-t3s-thermal-camera-for-smartphone/
Technical and cost overview of the evolution of radio frequency front-end module technologies integrated in 5G mmWave and Sub-6 GHz Phones.
More : https://www.systemplus.fr/reverse-costing-reports/rf-front-end-module-comparison-2021-vol-2-focus-on-5g-chipset/
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Discover the technological choices made by United Silicon Carbide Inc. (UnitedSiC) for its most advanced SiC JFET and its associated features
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The document provides a full reverse costing analysis of the Hamamatsu C12880MA microspectrometer. It includes a physical analysis of the package, reflective grating, image sensor, and die cross-section. The manufacturing process flow is examined, covering the front-end IC process, wafer fabrication, sensor layers process, grating process, and packaging. A cost analysis is presented for the front-end, image sensor die, grating, packaging, and total component cost. The report also provides a selling price analysis and compares the C12880MA to other spectrometer technologies.
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The first MMIC FEM targeting 5G base stations and terminals using a 0.15µm GaN-on-SiC process.
More information on that report at: https://www.systemplus.fr/reverse-costing-reports/qorvo-qpf4006-39ghz-gan-mmic-front-end-module/
Deep dive analysis of the fourth generation of mid/high band front-end module for 4G and 5G from Broadcom.
More information : https://www.systemplus.fr/reverse-costing-reports/broadcom-afem-8200-pamid-in-the-apple-iphone-12-series/
Panasonic 600 V GaN HEMT PGA26E19BA 2017 teardown reverse costing report publ...Yole Developpement
Panasonic adopts a DFN 8x8 package for its normally-off GaN HEMT structure
System Plus Consulting unveils the first GaN HEMT from Panasonic assembled in a dual flat no-lead (DFN) 8x8 package. Panasonic decided to abandon the standard TO220 package, probably because of poor electrical performance. Thanks to its proprietary X-GaN transistor structure and new die design the company has managed to produce a very competitive normally-off component.
The new PGA26E19BA from Panasonic features a medium breakdown voltage of 600V for a current of 10A at 25°C, with very low on-resistance with respect to its competitors and the TO220 assembled component.The transistor is optimized to be used in power supplies and AC-DC, photovoltaic and motor inverters.
Toyota Prius 4 PCU Power Modules - teardown reverse costing report published ...Yole Developpement
Toyota Prius 4 PCU modules integrate IGBT and freewheeling diodes onto innovative double side cooling packaging for hybrid electric vehicles, allowing better thermal dissipation, modularity and scalability of the system.
For its latest Prius 4 Toyota has designed a new power control unit (PCU). The PCU has two types of power module, one for the motor inverter and the other for the boost converter and generator inverter.
PCU power module toyota prius 4 system plus consulting
The module integrates Toyota’s latest power card packaging, with double side cooling. It allows the modularity and scalability of the PCU’s inverters to be optimized and also enables better thermal dissipation thanks to the use of copper heatsinks and spacers. The power cards can be placed in parallel to have a single thermal dissipation circuit in a limited space.
This package includes two pairs of wire bonded IGBTs and freewheeling diodes and is plastic molded.
This report offers a deep technical analysis of the module structure, packaging, and of the IGBT and diode die.
Based on a complete teardown analysis, the report also provides an estimation of the production cost of the package, IGBT and diode.
Moreover, the report compares the Prius 4 PCU with the Chevrolet Volt power module, analyzing the technical choices of the packaging and the die. This comparison highlights the huge differences in design and manufacturing process and their impact on device size and production cost.
Texas Instruments’ LMG5200 GaN Power Stage - 2018 teardown reverse costing re...system_plus
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More information on that report at http://www.systemplus.fr/reverse-costing-reports/texas-instruments-lmg5200-gan-power-stage/
This document provides an analysis of Tesla's UBQ01B0 chip used for full self-driving capabilities. It includes a physical analysis of the die and packaging, an overview of the manufacturing process, and a cost analysis. The chip is a system-on-chip designed and produced by Tesla to power its driver-assist and autonomous driving features. It utilizes quad-core ARM processors alongside a GPU and NPU for processing sensor data and neural network operations. The analysis examines the chip's design and architecture at the physical, manufacturing, and cost levels.
Broadcom AFEM-8072 – Mid and High Band LTE RF Front-End Module (FEM) - teardo...system_plus
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2-Axis Gyroscopes for Optical Image Stabilization: STMicroelectronics L2G2IS ...Yole Developpement
Complete reports and comparison of the latest generation products for smartphones from the leading optical image stabilization gyro players.
2-Axis Gyroscopes for Optical Image Stabilization (OIS) constitute a market where 123 million units were shipped in 2015, according to Yole Développement. This market originates only from high-end smartphones and two players share most of it: InvenSense, with 49%, and STMicroelectronics, with 39%.
The 2-axis gyroscopes are located inside the camera module of high-end smartphones. The main constraints are a small footprint and, more importantly, thinness.
Previously, thickness was the same as standard land grid array (LGA) or quad flat no-leads (QFN) package, close to 1mm. Now the standard is 0.65mm, which products from both InvenSense and STMicroelectronics attain.
InvenSense was first, with the IDG-2030, a 2.3x2.3x0.65mm gyroscope, which is still the smallest on the market. Since its introduction we found it in several smartphones from various manufacturers. The IDG-2030 uses the same Nasiri platform as other InvenSense inertial devices, with wafer-level integration of the MEMS sensor on top of the application specific integrated circuit (ASIC), thus providing only one die in the final LGA package.
Months later, STMicroelectronics released the L2G2IS, which shares the same dimensions. The device is manufactured using the same THELMA process as all STMicroelectronics inertial devices. The THELMA platform involves a two-die approach that is challenging for very thin package integration. However, both players now offer very low-cost gyros thanks to die size reduction and process optimization.
Both gyroscopes analyzed are 2-axis X, Y (Pitch, Roll). The two reports can be purchased separately or together in order to compare the technology and pricing of the main smartphone OIS gyro players, including previous generation products.
More information on that report at http://www.i-micronews.com/reports.html
GaN Systems GS61004B GaN HEMT 2018 teardown reverse costing report published ...system_plus
There are only two main players in the low-voltage GaN HEMT market: EPC and GaN Systems. GaN Systems wants to compete with EPC, the market leader, by unveiling its latest device, the GS61004B. The GS61004B is a GaN-on-silicon HEMT transistor packaged in GaN Systems' unique GaNpx embedded die package. This package has no wire bonding and its design increases heat dissipation while simplifying the manufacturing process to reduce costs. A teardown analysis estimates the production costs for the epitaxy and package. The report also compares the GS61004B to standard 100V Si MOSFETs and the competition.
In its new series of SiC MOSFETs, Rohm uses trench structures for 650V and 1200V products, while 1700V products use planar structures
After more than five years since SiC MOSFETs were first released, they are gradually penetrating different industries for power conversion applications. The market outlook is promising with a compound annual growth rate of 42% from 2015 to 2021. The forecast for 2017 is expected to be even better than previous years with increasingly positive signals from the industry.
Against this backdrop, Rohm offers a series of new SiC products at different voltages. It appears that it uses trench structures for 650V and 1200V products, while 1700V products use planar structures.
The SCT2H12NZGC11 is a 1700V SiC MOSFET from Rohm for industrial and commercial power application such as power supplies. The device offers a quite low on-resistance but very high current density and integrates the second generation high-voltage SiC power MOSFET dies, which now achieve 3.7A current.
Thanks to the die design the device’s cost is very competitive. The gate structure is very simple and the packaging is optimized to save costs.
The report presents a deep technology analysis of the packaging and components with images of the planar SiC structure.
More information on that report at http://www.i-micronews.com/reports.html
SiGe based millimeter-wave chipset commercially available for
backhaul applications with beamforming capability.
More information on that report at: http://www.systemplus.fr/reverse-costing-reports/peraso-x710-chipset-60ghz-outdoor-wireless-broadband-solution/
The 1st generation 1200V SiC MOSFET device from STMicroelectronics has good current density at a very competitive cost
The STC30N120 is the first generation 1200V SiC MOSFET device from STMicroelectronics. The device has a planar structure and a design that allows good electrical performance, such as high current density. Moreover, the supply chain and manufacturing choices lead to a very competitive cost.
The device is suitable for high power applications like motor drives, inverters, DC-DC converters and power supplies.
The STC30N120 integrates first generation high-voltage SiC power MOSFET dies in a dedicated discrete package.
The device is assumed to operate at very high temperature, up to 200°C, and to have an on-resistance of 90mΩ, with generally standard SiC manufacturing technology.
The report goes into depth in its analysis of the packaging and the components, with images of the complex planar SiC structure.
It also includes production cost analysis and detailed comparison with Rohm and Wolfspeed’s SiC MOSFETs and with 1200V silicon IGBTs. The comparison highlights differences in the electrical parameters, supply chain and production cost.
For more information, please visit our website: http://www.i-micronews.com/reports.html
LG Display Medianav ECU Available in the Dacia Dustersystem_plus
A competitive high resolution, high luminance and wide viewing angle automotive display.
Reverse Costing - Structure, process and cost report - find more here: https://www.systemplus.fr/reverse-costing-reports/lg-display-medianav-ecu-available-in-the-dacia-duster/
World’s first 76-81 GHz automotive single-chip radar in a System-on-Chip device with integrated Antenna-in-Package using Fan-Out packaging technology.
Reverse Costing - Structure, process and cost report by System Plus Consulting - find more here: https://www.systemplus.fr/reverse-costing-reports/mediatek-autus-r10-mt2706-77-79-ghz-ewlbaip-radar-chipset/
The first 3-Axis MEMS Gyroscope to meet Automotive AEC-Q100 qualification
MEMS are getting broadly adopted in the automotive industry and non-safety applications like in-dash navigation are now requiring low-cost and small footprint components.
The A3G4250D is a low power consumption MEMS gyroscope which is the first 3-axis gyroscope to have met the industry-standard qualification for automotive integrated circuits (AEC-Q100).
This 3-axis gyroscope for automotive applications measures angular rates up to ±245 dps. It has been designed and produced using the same manufacturing process (THELMA) than consumer products in order to get full benefit of STMicroelectronics 10 years of consumer electronic market.
Assembled in a 4.0 x 4.0 x 1.1mm package, it embeds an 8-bit temperature sensor and operates within an extended temperature range from -40 to 85°C.
It is suitable for applications including in-dash navigation, telematics and vehicle tolling systems, motion control with MMI (man-machine interface), appliances and robotics.
Panasonic PGA26C09DV 600V GaN HEMT teardown reverse costing report published ...Yole Developpement
Panasonic’s first 600V GaN HEMT has an innovative structure designed to integrate a normally-off transistor in a standard package, without a cascade structure
System Plus Consulting unveils Panasonic’s first GaN HEMT, assembled in a standard TO220 package. Thanks to its specific die design, the component is normally-off without using a cascade structure or special packaging.
Panasonic’s PGA26C09DV features a medium-voltage breakdown of 600V for a current of 15A (25°C), with very low RdsOn compared to its competitors. The transistor is optimized for AC-DC power supply, photovoltaic, and motor inverters.
The GaN and AlGaN layers are deposited by epitaxy on a silicon substrate. A complex buffer and template layer structure is used to reduce stress and dislocation. This is complemented by a thick superlattice structure clearly visible in the TEM analysis.
Based on a complete teardown analysis, this report also provides a production cost estimate for the epitaxy, HEMT, and package.
Moreover, this report offers a comparison with GaN Systems’ GS66504B and Transphorm’s GaN HEMT, highlighting the huge differences in design and manufacturing process and their impact on device size and production cost.
For more information visite us at: http://www.i-micronews.com/reports.html
GaN-on-Silicon Transistor Comparison 2018 Structural, Process & Costing Repor...Yole Developpement
Dive deep into the technology and cost of GaN-on-silicon HEMTs from EPC, Transphorm, GaN Systems, Panasonic and Texas Instruments.
More information on that report at https://www.i-micronews.com/report/product/gan-on-silicon-transistor-comparison-2018.html
Toshiba first GaN on Silicon LED teardown reverse costing report by Yole Deve...Yole Developpement
Toshiba has recently released its first GaN on Silicon LED in a 6450 standard package with several new features.
The TL1F1 LED of Toshiba are produced on a cheap 8” silicon substrate in a standard power silicon facility from Toshiba. The integration in a standard facility has been facilitated by a smart bonding process without gold.
Moreover, a significant work has been done to thin epitaxial layer in GaN. The GaN thickness approximates the one on Sapphire LED.
A low current density per sq cm is obtained, estimated at 20A/sqcm, lower than sapphire LED. However, the 2nd generation of GaN on Si LED produces 30% more lumen.
More information on that report at http://www.i-micronews.com/reports/Toshiba-GaN-Silicon-LED/14/413/
Similar to Power Discrete Packaging Comparison 2018 report published by System Plus Consulting (20)
SP20569 - IRay T3S Thermal Camera for Smartphonesystem_plus
Multiple optimized packaging innovations for this automotive power module from Vitesco Technologies.
More : https://www.systemplus.fr/reverse-costing-reports/iray-t3s-thermal-camera-for-smartphone/
Technical and cost overview of the evolution of radio frequency front-end module technologies integrated in 5G mmWave and Sub-6 GHz Phones.
More : https://www.systemplus.fr/reverse-costing-reports/rf-front-end-module-comparison-2021-vol-2-focus-on-5g-chipset/
Technical and cost overview of the evolution of the radio frequency front-end module technologies integrated in the Apple iPhone series from 2016 - 2020.
More : https://www.systemplus.fr/reverse-costing-reports/rf-front-end-module-comparison-2021-vol-1-focus-on-apple/
Apple iPhone 12 series mmWave 5G Chipset and Antennasystem_plus
A study of the complete first generation of the 5G millimeter-wave chipset for Apple’s phones including custom antenna, front-end module and antenna-on-package.
More information : https://www.systemplus.fr/reverse-costing-reports/apple-iphone-12-series-mmwave-5g-chipset-and-antenna/
This document provides an overview of NVIDIA's new A100 Ampere GPU. Some key points:
- It uses TSMC's 7nm process and CoWoS packaging to integrate over 6,000mm2 of silicon onto a single 55mm x 55mm package.
- It features a 7nm GPU die with 54 billion transistors and 40/80GB of HBM2 memory in a 3D stacked configuration connected via microbumps and TSVs.
- The report includes a physical analysis of the package, dies, and assembly, as well as a cost analysis and estimated price. It finds the A100 provides significantly higher performance than previous generations like the V100.
Deep analysis of the 400Gb optical transceiver from a leading Chinese company.
More information: https://www.systemplus.fr/reverse-costing-reports/innolights-400g-qsfp-dd-optical-transceiver/
EPC’s 70 V ePower stage with separate and independent high and low side control inputs.
More information: https://www.systemplus.fr/reverse-costing-reports/epc2152-half-bridge-monolithic-gan-ic/
Microsoft - Holographic Lens from Hololens 2system_plus
See-through holographic display for mixed reality smartglasses.
More on : https://www.systemplus.fr/reverse-costing-reports/microsoft-holographic-lens-from-hololens-2/
Cost-effective 1 mm2 miniature camera with customizable wafer-level optics for endoscopy and novel medical imaging devices.
More information : https://www.systemplus.fr/reverse-costing-reports/ams-naneye-mini-camera/
Discover Axis’s high-end product integrating its latest ARTPEC-7 in-house system-on-chip dedicated to network video and machine learning capabilities.
More information : https://www.systemplus.fr/reverse-costing-reports/axis-p1375-e-network-camera/
Hikvision Intelligent Thermal Network Camera (DS-2TD2166-15 V1)system_plus
Dig deep into Hikvision’s AI-powered thermal network camera for security applications.
More information: https://www.systemplus.fr/reverse-costing-reports/hikvision-intelligent-thermal-network-camera-ds-2td2166-15-v1/
Physical and cost analysis of Micron’s fifth-generation low-power DRAM memory.
More information: https://www.systemplus.fr/reverse-costing-reports/micron-lpddr5-12gb-mobile-memory/
Safran Colibrys MS1010 and MEMSIC MXA2500M High-End Accelerometerssystem_plus
Detailed technology and cost analysis of the high-end single-axis and dual-axis accelerometers integrated in the STIM318 IMU.
More information: https://www.systemplus.fr/reverse-costing-reports/safran-colibrys-ms1010-and-memsic-mxa2500m-high-end-accelerometers/
Sensonor STIM318 Inertial Measurement Unit (IMU)system_plus
Newest IMU with 9-axis detection and gyro bias instability of 0.3°/h from Sensonor.
More information: https://www.systemplus.fr/reverse-costing-reports/sensonor-stim318-inertial-measurement-unit-imu/
Hamamatsu Photodiode and Laser in Livox’s Horizon LiDARsystem_plus
Analysis of the six channels and 905nm pulsed laser and photodiode from Hamamatsu, in Livox’s LiDAR for automotive ADAS.
More information: https://www.systemplus.fr/reverse-costing-reports/hamamatsu-photodiode-and-laser-in-livox-horizon-lidar/
Everspin’s Spin Transfer Torque MRAM with perpendicular magnetic tunnel junction.
More information: https://www.systemplus.fr/reverse-costing-reports/everspin-emd3d256m-sttmram-memory/
MEMS Fabry-Perot interferometer in a very tiny NIR spectrometer.
More information: https://www.systemplus.fr/reverse-costing-reports/spectral-engines-nirone-sensor-x/
Deep analysis of the latest generation of under-display optical fingerprint sensors using micro-optics.
Reverse Costing - Structure, process and cost report by System Plus Consulting - find more here: https://www.systemplus.fr/reverse-costing-reports/goodixs-ultra-thin-optical-in-display-fingerprint/
Broadcom AFEM-8100 System-in-Package in the Apple iPhone 11 Seriessystem_plus
This document provides a reverse costing analysis of the Broadcom AFEM-8100 SiP used in the Apple iPhone 11 series. It includes a physical analysis of the module and its dies, as well as a manufacturing process flow and cost analysis. Broadcom remains the sole supplier of the multi-die module, which features power amplifier, switch, filter and other dies. The analysis finds innovations that reduce the package size and cost, including a new EMI shielding integration method.
Advanced System-in-Package Technology in Apple’s AirPods Prosystem_plus
Analysis of Apple’s first SiP found in the latest AirPods, featuring a fully integrated SiP for audio codec and Bluetooth connectivity.
Reverse Costing - Structure, process and cost report - find more here: https://www.systemplus.fr/reverse-costing-reports/advanced-system-in-package-technology-in-apples-airpods-pro/
Ivanti’s Patch Tuesday breakdown goes beyond patching your applications and brings you the intelligence and guidance needed to prioritize where to focus your attention first. Catch early analysis on our Ivanti blog, then join industry expert Chris Goettl for the Patch Tuesday Webinar Event. There we’ll do a deep dive into each of the bulletins and give guidance on the risks associated with the newly-identified vulnerabilities.
zkStudyClub - LatticeFold: A Lattice-based Folding Scheme and its Application...Alex Pruden
Folding is a recent technique for building efficient recursive SNARKs. Several elegant folding protocols have been proposed, such as Nova, Supernova, Hypernova, Protostar, and others. However, all of them rely on an additively homomorphic commitment scheme based on discrete log, and are therefore not post-quantum secure. In this work we present LatticeFold, the first lattice-based folding protocol based on the Module SIS problem. This folding protocol naturally leads to an efficient recursive lattice-based SNARK and an efficient PCD scheme. LatticeFold supports folding low-degree relations, such as R1CS, as well as high-degree relations, such as CCS. The key challenge is to construct a secure folding protocol that works with the Ajtai commitment scheme. The difficulty, is ensuring that extracted witnesses are low norm through many rounds of folding. We present a novel technique using the sumcheck protocol to ensure that extracted witnesses are always low norm no matter how many rounds of folding are used. Our evaluation of the final proof system suggests that it is as performant as Hypernova, while providing post-quantum security.
Paper Link: https://eprint.iacr.org/2024/257
Monitoring and Managing Anomaly Detection on OpenShift.pdfTosin Akinosho
Monitoring and Managing Anomaly Detection on OpenShift
Overview
Dive into the world of anomaly detection on edge devices with our comprehensive hands-on tutorial. This SlideShare presentation will guide you through the entire process, from data collection and model training to edge deployment and real-time monitoring. Perfect for those looking to implement robust anomaly detection systems on resource-constrained IoT/edge devices.
Key Topics Covered
1. Introduction to Anomaly Detection
- Understand the fundamentals of anomaly detection and its importance in identifying unusual behavior or failures in systems.
2. Understanding Edge (IoT)
- Learn about edge computing and IoT, and how they enable real-time data processing and decision-making at the source.
3. What is ArgoCD?
- Discover ArgoCD, a declarative, GitOps continuous delivery tool for Kubernetes, and its role in deploying applications on edge devices.
4. Deployment Using ArgoCD for Edge Devices
- Step-by-step guide on deploying anomaly detection models on edge devices using ArgoCD.
5. Introduction to Apache Kafka and S3
- Explore Apache Kafka for real-time data streaming and Amazon S3 for scalable storage solutions.
6. Viewing Kafka Messages in the Data Lake
- Learn how to view and analyze Kafka messages stored in a data lake for better insights.
7. What is Prometheus?
- Get to know Prometheus, an open-source monitoring and alerting toolkit, and its application in monitoring edge devices.
8. Monitoring Application Metrics with Prometheus
- Detailed instructions on setting up Prometheus to monitor the performance and health of your anomaly detection system.
9. What is Camel K?
- Introduction to Camel K, a lightweight integration framework built on Apache Camel, designed for Kubernetes.
10. Configuring Camel K Integrations for Data Pipelines
- Learn how to configure Camel K for seamless data pipeline integrations in your anomaly detection workflow.
11. What is a Jupyter Notebook?
- Overview of Jupyter Notebooks, an open-source web application for creating and sharing documents with live code, equations, visualizations, and narrative text.
12. Jupyter Notebooks with Code Examples
- Hands-on examples and code snippets in Jupyter Notebooks to help you implement and test anomaly detection models.
FREE A4 Cyber Security Awareness Posters-Social Engineering part 3Data Hops
Free A4 downloadable and printable Cyber Security, Social Engineering Safety and security Training Posters . Promote security awareness in the home or workplace. Lock them Out From training providers datahops.com
Dandelion Hashtable: beyond billion requests per second on a commodity serverAntonios Katsarakis
This slide deck presents DLHT, a concurrent in-memory hashtable. Despite efforts to optimize hashtables, that go as far as sacrificing core functionality, state-of-the-art designs still incur multiple memory accesses per request and block request processing in three cases. First, most hashtables block while waiting for data to be retrieved from memory. Second, open-addressing designs, which represent the current state-of-the-art, either cannot free index slots on deletes or must block all requests to do so. Third, index resizes block every request until all objects are copied to the new index. Defying folklore wisdom, DLHT forgoes open-addressing and adopts a fully-featured and memory-aware closed-addressing design based on bounded cache-line-chaining. This design offers lock-free index operations and deletes that free slots instantly, (2) completes most requests with a single memory access, (3) utilizes software prefetching to hide memory latencies, and (4) employs a novel non-blocking and parallel resizing. In a commodity server and a memory-resident workload, DLHT surpasses 1.6B requests per second and provides 3.5x (12x) the throughput of the state-of-the-art closed-addressing (open-addressing) resizable hashtable on Gets (Deletes).
A Comprehensive Guide to DeFi Development Services in 2024Intelisync
DeFi represents a paradigm shift in the financial industry. Instead of relying on traditional, centralized institutions like banks, DeFi leverages blockchain technology to create a decentralized network of financial services. This means that financial transactions can occur directly between parties, without intermediaries, using smart contracts on platforms like Ethereum.
In 2024, we are witnessing an explosion of new DeFi projects and protocols, each pushing the boundaries of what’s possible in finance.
In summary, DeFi in 2024 is not just a trend; it’s a revolution that democratizes finance, enhances security and transparency, and fosters continuous innovation. As we proceed through this presentation, we'll explore the various components and services of DeFi in detail, shedding light on how they are transforming the financial landscape.
At Intelisync, we specialize in providing comprehensive DeFi development services tailored to meet the unique needs of our clients. From smart contract development to dApp creation and security audits, we ensure that your DeFi project is built with innovation, security, and scalability in mind. Trust Intelisync to guide you through the intricate landscape of decentralized finance and unlock the full potential of blockchain technology.
Ready to take your DeFi project to the next level? Partner with Intelisync for expert DeFi development services today!
TrustArc Webinar - 2024 Global Privacy SurveyTrustArc
How does your privacy program stack up against your peers? What challenges are privacy teams tackling and prioritizing in 2024?
In the fifth annual Global Privacy Benchmarks Survey, we asked over 1,800 global privacy professionals and business executives to share their perspectives on the current state of privacy inside and outside of their organizations. This year’s report focused on emerging areas of importance for privacy and compliance professionals, including considerations and implications of Artificial Intelligence (AI) technologies, building brand trust, and different approaches for achieving higher privacy competence scores.
See how organizational priorities and strategic approaches to data security and privacy are evolving around the globe.
This webinar will review:
- The top 10 privacy insights from the fifth annual Global Privacy Benchmarks Survey
- The top challenges for privacy leaders, practitioners, and organizations in 2024
- Key themes to consider in developing and maintaining your privacy program
Programming Foundation Models with DSPy - Meetup SlidesZilliz
Prompting language models is hard, while programming language models is easy. In this talk, I will discuss the state-of-the-art framework DSPy for programming foundation models with its powerful optimizers and runtime constraint system.
Salesforce Integration for Bonterra Impact Management (fka Social Solutions A...Jeffrey Haguewood
Sidekick Solutions uses Bonterra Impact Management (fka Social Solutions Apricot) and automation solutions to integrate data for business workflows.
We believe integration and automation are essential to user experience and the promise of efficient work through technology. Automation is the critical ingredient to realizing that full vision. We develop integration products and services for Bonterra Case Management software to support the deployment of automations for a variety of use cases.
This video focuses on integration of Salesforce with Bonterra Impact Management.
Interested in deploying an integration with Salesforce for Bonterra Impact Management? Contact us at sales@sidekicksolutionsllc.com to discuss next steps.
Skybuffer AI: Advanced Conversational and Generative AI Solution on SAP Busin...Tatiana Kojar
Skybuffer AI, built on the robust SAP Business Technology Platform (SAP BTP), is the latest and most advanced version of our AI development, reaffirming our commitment to delivering top-tier AI solutions. Skybuffer AI harnesses all the innovative capabilities of the SAP BTP in the AI domain, from Conversational AI to cutting-edge Generative AI and Retrieval-Augmented Generation (RAG). It also helps SAP customers safeguard their investments into SAP Conversational AI and ensure a seamless, one-click transition to SAP Business AI.
With Skybuffer AI, various AI models can be integrated into a single communication channel such as Microsoft Teams. This integration empowers business users with insights drawn from SAP backend systems, enterprise documents, and the expansive knowledge of Generative AI. And the best part of it is that it is all managed through our intuitive no-code Action Server interface, requiring no extensive coding knowledge and making the advanced AI accessible to more users.
HCL Notes und Domino Lizenzkostenreduzierung in der Welt von DLAUpanagenda
Webinar Recording: https://www.panagenda.com/webinars/hcl-notes-und-domino-lizenzkostenreduzierung-in-der-welt-von-dlau/
DLAU und die Lizenzen nach dem CCB- und CCX-Modell sind für viele in der HCL-Community seit letztem Jahr ein heißes Thema. Als Notes- oder Domino-Kunde haben Sie vielleicht mit unerwartet hohen Benutzerzahlen und Lizenzgebühren zu kämpfen. Sie fragen sich vielleicht, wie diese neue Art der Lizenzierung funktioniert und welchen Nutzen sie Ihnen bringt. Vor allem wollen Sie sicherlich Ihr Budget einhalten und Kosten sparen, wo immer möglich. Das verstehen wir und wir möchten Ihnen dabei helfen!
Wir erklären Ihnen, wie Sie häufige Konfigurationsprobleme lösen können, die dazu führen können, dass mehr Benutzer gezählt werden als nötig, und wie Sie überflüssige oder ungenutzte Konten identifizieren und entfernen können, um Geld zu sparen. Es gibt auch einige Ansätze, die zu unnötigen Ausgaben führen können, z. B. wenn ein Personendokument anstelle eines Mail-Ins für geteilte Mailboxen verwendet wird. Wir zeigen Ihnen solche Fälle und deren Lösungen. Und natürlich erklären wir Ihnen das neue Lizenzmodell.
Nehmen Sie an diesem Webinar teil, bei dem HCL-Ambassador Marc Thomas und Gastredner Franz Walder Ihnen diese neue Welt näherbringen. Es vermittelt Ihnen die Tools und das Know-how, um den Überblick zu bewahren. Sie werden in der Lage sein, Ihre Kosten durch eine optimierte Domino-Konfiguration zu reduzieren und auch in Zukunft gering zu halten.
Diese Themen werden behandelt
- Reduzierung der Lizenzkosten durch Auffinden und Beheben von Fehlkonfigurationen und überflüssigen Konten
- Wie funktionieren CCB- und CCX-Lizenzen wirklich?
- Verstehen des DLAU-Tools und wie man es am besten nutzt
- Tipps für häufige Problembereiche, wie z. B. Team-Postfächer, Funktions-/Testbenutzer usw.
- Praxisbeispiele und Best Practices zum sofortigen Umsetzen
Have you ever been confused by the myriad of choices offered by AWS for hosting a website or an API?
Lambda, Elastic Beanstalk, Lightsail, Amplify, S3 (and more!) can each host websites + APIs. But which one should we choose?
Which one is cheapest? Which one is fastest? Which one will scale to meet our needs?
Join me in this session as we dive into each AWS hosting service to determine which one is best for your scenario and explain why!
In the realm of cybersecurity, offensive security practices act as a critical shield. By simulating real-world attacks in a controlled environment, these techniques expose vulnerabilities before malicious actors can exploit them. This proactive approach allows manufacturers to identify and fix weaknesses, significantly enhancing system security.
This presentation delves into the development of a system designed to mimic Galileo's Open Service signal using software-defined radio (SDR) technology. We'll begin with a foundational overview of both Global Navigation Satellite Systems (GNSS) and the intricacies of digital signal processing.
The presentation culminates in a live demonstration. We'll showcase the manipulation of Galileo's Open Service pilot signal, simulating an attack on various software and hardware systems. This practical demonstration serves to highlight the potential consequences of unaddressed vulnerabilities, emphasizing the importance of offensive security practices in safeguarding critical infrastructure.
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10.RESPONSABILITY LIMITATION
The Buyer is responsible for the use and interpretations he makes of the reports delivered by System Plus Consulting.
Consequently, System Plus Consulting responsibility can in no case be called into question for any direct or indirect damage,
financial or otherwise, that may result from the use of the results of our analysis or results obtained using one of our costing
tools.
11.APPLICABLE LAW
Any dispute that may arise about the interpretation or execution of the current terms and conditions shall be resolved
applying the French law.
It the dispute cannot be settled out-of-court, the competent Court will be the Tribunal de Commerce de Nantes.
Performed by