SPICE MODEL of 2SK3911 (Standard+BDS Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SK3911
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters) / ESD Protection
Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Circuit Configuration


MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

20

18

16

14

12
gfs

10

8

6

4
Measurement
2 Simulation

0
1 3 5 7 9 11 13 15 17 19
ID - Drain Current - A

Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
1 4.800 4.882 1.708
2 6.150 6.250 1.626
5 10.500 10.638 1.314
10 13.700 13.889 1.380
20 17.500 17.544 0.251


Vgs-Id Characteristic

Circuit Simulation result

50A

40A

30A

20A

10A

0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V2

Evaluation circuit

V3

0Vdc

U27
Vv ariable

10Vdc 2SK3911
10Vdc

V2

0


Comparison Graph


19.00
Measurement
Simulation
17.00

15.00

13.00
ID - Drain Current - A

11.00

9.00

7.00

5.00

3.00

1.00
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
Simulation Result

VGS(V)
ID(A) Error (%)
1 4.800 4.876 1.583
2 5.000 5.048 0.960
5 5.350 5.413 1.178
10 5.750 5.838 1.530
20 6.400 6.464 1.000


Rds(on) Characteristic

12A

10A

8A

6A

4A

2A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
V_VDS
Evaluation circuit

V3

0Vdc

U27
VDS

10Vdc 2SK3911
0Vdc

VGS

0

Simulation Result

ID=10A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.220  0.220  0


Gate Charge Characteristic
20V

16V

12V

8V

4V

0V
0 20n 40n 60n 80n 100n
V(W1:3)
Time*1mS
Evaluation circuit

V2

0Vdc

U27 Dbreak
PER = 1000u
PW = 600u W1
TF = 10n + 2SK3911 D1
TR = 10n I2
-
TD = 0 20Adc
I2 = 1m W
I1 IOFF = 1mA
I1 = 0 ION = 0uA

V1
400Vdc

0

Simulation Result

VDD=400V,ID=20A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 25.000 25.451 1.804
Qgd(nC) 13.000 13.063 0.485
Qg 58.000 55.631 -4.084


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.1 5600 5610 0.179
0.2 5300 5291 -0.170
0.5 4430 4435 0.113
1 3600 3608 0.222
2 2840 2841 0.035
5 2000 1991 -0.450
10 1320 1332 0.909


Switching Time Characteristic


12V

10V

8V

6V

4V

2V

0V
0.921us 1.000us 1.100us 1.200us 1.299us
V(L2:1)/20 V(L1:2)
Time

Evaluation circuit

L2 R2

50nH
20

R1 L1 U30

30nH
V1 = 0 2SK3911 V1
V2 = 20 V2 4.7 200Vdc
TD = 1u R3
TR = 1n
TF = 1n 4.7
PW = 10u
PER = 200u

0

Simulation Result

ID=10 A, VDD=200V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 45.000 45.089 0.198


Output Characteristic


50A

40A

7V

30A

6.5V

20A

6.V

10A
5.5V

VGS=5V

0A
0V 4V 8V 12V 16V 20V
I(Vdsense)
V_Vvariable

Evaluation circuit

Vdsense

0Vdc

U30

Vv ariable
10Vdc 2SK3911

10Vdc

Vstep

0


BODY DIODE SPICE MODEL

Forward Current Characteristic

100A

10A

1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

2SK3911
V1
0Vdc
U27

0


Comparison Graph


100.00
Measurement
Simulation
Drain reverse current IDR(A)

10.00

1.00

0.10
0 0.4 0.8 1.2 1.6

Source-Drain voltage VSD(V)

Simulation Result

VSD(V)
IDR(A) Measuremen Simulation %Error
0.1 0.580 0.584 0.690
0.2 0.610 0.614 0.656
0.5 0.650 0.654 0.615
1 0.680 0.685 0.735
2 0.710 0.720 1.408
5 0.770 0.772 0.260
10 0.820 0.828 0.976
20 0.910 0.906 -0.440


Reverse Recovery Characteristic

400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
2us 4us 6us 8us 10us 12us 14us 16us 18us 20us
I(R1)
Time
Evaluation Circuit

R1

50

V1 = -9.4v V1 2SK3911
V2 = 10.7v
TD = 0.4u
TR = 10ns U30
TF = 19ns
PW = 8us
PER = 100us

0

Compare Measurement vs. Simulation

Trr(ns) Measurement Simulation Error (%)
Trj+Trb 3.500 3.598 2.800


Reverse Recovery Characteristic Reference

Trj=2.000(us)
Trb=1.500(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE SPICE MODEL

Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1
0Vdc
R2
2SK3911
100MEG
U28

0


Zener Voltage Characteristic Reference


SPICE MODEL of 2SK3911 (Standard+BDS Model) in SPICE PARK

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