This document summarizes the modeling and simulation of a MOSFET transistor and its internal body diode. It includes: 1) Details of the MOSFET part number, manufacturer, and model parameters used in the simulation. 2) Results of simulations validating the MOSFET model, including transconductance, voltage-current characteristics, capacitances, switching times and more. 3) Similar validation simulations for the internal body diode model, including forward and reverse characteristics. 4) Comparisons of measurement data to simulation results, showing good agreement between the two.

1. Device Modeling Report
COMPONENTS: MOSFET (Model Parameters)
PART NUMBER: TK12A50D
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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3. Transconductance Characteristic
Circuit Simulation Result
10
Measurement
Simulation
Transconductance GFS (s)
8
6
4
2
0
0 2 4 6 8 10
Drain Current ID (A)
Comparison table
gfs
Id(A) Error (%)
Measurement Simulation
1 2.930 3.065 4.608
2 4.100 4.273 4.220
5 6.600 6.571 -0.455
10 9.300 9.013 -3.086
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4. Vgs-Id Characteristic
Circuit Simulation result
20A
15A
10A
5A
0A
0V 2V 4V 6V 8V 10V
I(V3)
V_VGS
Evaluation circuit
V3
U1
TK12A50D
VDS
20Vdc
VGS
0
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5. Comparison Graph
Circuit Simulation Result
20
Measurement
Simulation
16
DRAIN CURRENT ID (A)
12
8
4
0
0 2 4 6 8 10
GATE-SOURCE VOLTAGE VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
1 4.930 4.940 0.20
2 5.250 5.213 -0.70
5 5.800 5.765 -0.60
10 6.450 6.406 -0.68
20 7.400 7.347 -0.72
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6. Rds(on) Characteristic
Circuit Simulation result
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 0.45V 0.90V 1.35V 1.80V 2.25V 2.70V
I(Vsense)
V_VDS
Evaluation circuit
Vsense
U1
TK12A50D
VDS
0Vdc
VGS
10Vdc
0
Simulation Result
ID = 6A, VGS = 10V Measurement Simulation Error (%)
R DS (on)  0.450 0.449 -0.22
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7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 5n 10n 15n 20n 25n 30n 35n 40n
V(W1:3)
Time*1mA
Evaluation circuit
Vsense
I1
U1 D1
TK12A50D Dbreak 12Adc
W1
+
I2
-
TD = 0 W VD
ION = 0A 400Vdc
IOFF = 1mA
0
Simulation Result
VDD=400V, ID=12A,
Measurement Simulation Error (%)
VGS=10V
Qgs nC 8.00 7.96 -0.50
Qgd nC 9.20 9.19 -0.11
Qg nC 25.00 22.497 -10.01
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8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd (pF)
VDS (V) Error (%)
Measurement Simulation
10 206.000 205.500 -0.24
20 140.500 141.800 0.93
50 87.000 86.100 -1.03
100 59.000 58.900 -0.17
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9. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
-2V
4.81us 5.00us 5.20us 5.30us
V(2) V(3)/20
Time
Evaluation circuit
Vsense RL
3
50nH 33
R1 L3 U1
2 TK12A50D
V1 = 0 50 30nH VDD
V2 = 20 V1 200Vdc
TD = 5u R2
TR = 10n 50
TF = 10n
PW = 10u
PER = 10m
0
Simulation Result
ID=6A, VDD=200V
Measurement Simulation Error (%)
VGS=0/10V
ton ns 55.000 55.440 0.80
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10. Output Characteristic
Circuit Simulation result
20A
10 7.5
8
16A 7.0
6.75
12A
6.5
8A
6.0
5.5
4A
VGS=5V
0A
0V 10V 20V 30V 40V 50V
I(Vsense)
V_VD
Evaluation circuit
Vsense
U1
TK12A50D VD
20Vdc
VGS
0Vdc
0
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11. Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
0V 1.0V 2.0V 2.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U1
TK12A50D
V1
0Vdc
0
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12. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
Drain Reverse Current IDR (A)
10
1
0.1
0 0.4 0.8 1.2
Drain-Source Voltage VDS (V)
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.1 0.620 0.615 -0.81
0.2 0.640 0.641 0.16
0.5 0.680 0.682 0.29
1.0 0.715 0.719 0.56
2.0 0.770 0.768 -0.26
5.0 0.855 0.856 0.12
10.0 0.950 0.950 0.00
20.0 1.100 1.093 -0.64
30.0 1.210 1.214 0.33
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13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
15.2us 20.0us 25.0us 27.2us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.3V V1 U1
V2 = 10.7V TK12A50D
TD = 18ns
TR = 7.5ns
TF = 10ns
PW = 20us
PER = 100us
0
Compare Measurement vs. Simulation
Characteristic Unit Measurement Simulation Error (%)
trj ns 680.000 658.521 -3.16
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14. Reverse Recovery Characteristic Reference
Measurement
Trj= 680 (ns)
Trb= 660 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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