SPICE MODEL of TPCP8203 (Standard+BDS Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: TPCP8203
MANUFACTURER: TOSHIBA
Body Diode (Standard Model) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

Circuit Configuration

8 7 6 5

1 2 3 4

MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

20
Measurement
TRANSCONDUCTANCE GFS(s)

18 Simulation

16

14

12

10

8

6
0 2 4 6 8 10 12 14 16 18

DRIAN CURRENT ID (A)
Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
2 7.355 7.407 0.719
4 10.186 10.127 -0.583
5 11.255 11.186 -0.615
8 13.756 13.722 -0.250
10 15.050 14.933 -0.777
12 16.345 16.282 -0.387
16 18.555 18.349 -1.112


Vgs-Id Characteristic

Circuit Simulation result

16A

14A

12A

10A

8A

6A

4A

2A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V
I(V2)
V_VGS

Evaluation circuit

U1 TPCP8203
V3
0Vdc
open

open open
open V1 R1
open
VGS
100MEG
10Vdc
0Vdc

0

0


Comparison Graph


18
Measurement
16
Simulation
14
Drain Current ID (A)

12

10

8

6

4

2

0
2.5 2.75 3 3.25 3.5 3.75 4 4.25

Gate - Source Voltage VGS (V)
Simulation Result

VGS(V)
ID(A) Error (%)
1 2.750 2.760 0.378
2 2.930 2.921 -0.311
4 3.150 3.154 0.121
5 3.245 3.250 0.145
8 3.502 3.495 -0.191
10 3.640 3.636 -0.110
12 3.770 3.767 -0.082
16 3.988 4.002 0.361


Rds(on) Characteristic


2.40A

1.92A

1.44A

0.96A

0.48A

0A
0V 20.6mV 41.3mV 61.9mV 82.6mV 103.0mV
I(V3)
V_Vds
Evaluation circuit

U1 TPCP8203
V3
0Vdc
open

open open
open VDS R1
open
VGS
100MEG
10Vdc
10Vdc

0

0

Simulation Result

ID=2.4A, VGS=4.5V Measurement Simulation Error (%)

R DS (on) m 43.00 43.00 0.000


Gate Charge Characteristic
16V

14V

12V

10V

8V

6V

4V

2V

0V
0 2n 4n 6n 8n 10n 12n 14n 16n 18n 20n
V(W1:3)
Time*1mA
Evaluation circuit

Vsense

open
open open
W1
+ I1
open open
D1
-
Dbreak 4.7Adc Ropen
I2 W U1 TPCP8203
TD = 0 ION = 0A 100MEG
IOFF = 1mA

VD
32Vdc 0

0

Simulation Result

VDD=32V,ID=4.7A,
VGS=10V Measurement Simulation Error (%)

Qgs ns 2.500 2.492 -0.320
Qgd ns 4.000 3.938 -1.550
Qg ns 16.000 12.308 -23.075


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd (pF)
VDS(V) Error(%)
1 70.000 69.890 -0.157
2 65.000 66.549 2.382
5 55.000 54.586 -0.753
10 45.000 44.026 -2.165
20 32.000 33.124 3.511
40 22.000 21.998 -0.009


Switching Time Characteristic


12V

10V

8V

6V

4V

2V

0V

-2V
0.96us 0.98us 1.00us 1.02us 1.04us 1.06us 1.08us
V(2)*1 V(3)/2
Time

Evaluation circuit

RL
3
R1 L3
2 8.33 open
30nH
4.7
open open
V1 = 0
V2 = 20 R2 Ropen
open open
TD = 1u V1
TR = 10n 4.7 VD 100MEG
TF = 10n U1 TPCP8203 20Vdc
PW = 10u
PER = 10m 0

0

Simulation Result

ID=2.4A, VDD=20V
Measurement Simulation Error(%)
VGS=0/10V
td (on) ns 15.00 14.98 -0.13


Output Characteristic


20A
4.5V
10V
18A
8.0V 5V
16A 4.0V
6.0V
14A

12A 3.8V

10A
3.6V
8A

3.4V
6A

3.2V
4A
VGS=3V
2A

0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V
I(V3)
V_V1

Evaluation circuit

U1 TPCP8203
V3
0Vdc
open

open open
open V1 R1
open
VGS
100MEG
10Vdc
0Vdc

0

0


BODY DIODE
Forward Current Characteristic


100A

10A

1.0A

100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(X_U1.D_D1)
V_V1

Evaluation Circuit

R1

0.01m openopen
open

U1 TPCP8203
V1
Ropen

0Vdc 100MEG

openopenopen
0

0


Comparison Graph


100
Measurement
Simulation
Drain reverse Current - IDR (A)

10

1

0.1
0 0.2 0.4 0.6 0.8 1 1.2
Drain - Source Voltage VDS (V)

Simulation Result

VDS(V)
IDR(A) %Error
0.1 0.640 0.636 -0.644
0.2 0.660 0.664 0.561
0.5 0.700 0.702 0.286
1 0.735 0.735 0.054
2 0.780 0.774 -0.756
5 0.845 0.846 0.071
10 0.930 0.932 0.258
20 1.080 1.079 -0.083


Reverse Recovery Characteristic


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.94us 0.98us 1.02us 1.06us 1.10us 1.14us
I(R1)
Time

Evaluation Circuit

R1 50

openopen open

V1 = -9.5V V1 U1 TPCP8203
V2 = 10.6V Ropen
TD = 6n
TR = 10ns 1G
TF = 5.7ns
PW = 1us
PER = 50us

openopenopen 0

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj ns 13.60 13.58 -0.147


Reverse Recovery Characteristic Reference

Measurement

Trj=13.60(ns)
Trb=12.80(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE
Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

U1 TPCP8203 open1 open2 open3
0.01m
open3
V1 Ropen1 Ropen2 Ropen3
open3
0Vdc
100MEG 100MEG 100MEG
open1 open3

open2 open3 0 0 0

0


Zener Voltage Characteristic Reference


SPICE MODEL of TPCP8203 (Standard+BDS Model) in SPICE PARK

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