Noise performance of p-i-n and APD
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This document discusses the noise performance of p-i-n and avalanche photodiode (APD) devices. It defines key metrics like quantum efficiency, response speed, noise equivalent power, and signal-to-noise ratio. For p-i-n diodes, it examines the contributions of drift, diffusion, shot noise, and thermal noise currents. For APDs, it describes how the internal avalanche gain improves sensitivity but also increases excess noise. Formulas are provided for calculating noise performance metrics in both types of photodiodes.
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2) The I-V characteristics of a MESFET can be modeled as a voltage-controlled current source where the drain current is varied by small changes in the gate potential.
3) MESFETs have advantages over other transistors for RF applications due to their high electron mobility, low stray capacitance from the Schottky gate, and negative temperature coefficient.
Chapter 4.ppt
Modulation and demodulation schemes are discussed along with receiver design principles and performance metrics like signal-to-noise ratio and bit error rate. Digital modulation formats like on-off keying are described as well as analog modulation. Ideal and practical direct detection receivers are analyzed considering noise sources like thermal noise, shot noise, and their impact on bit error rate which can be calculated using the Gaussian Q-function. Optical amplification and its associated amplified spontaneous emission noise are also covered.
Fiber optic receiver
The document summarizes fundamental receiver operations in optical fiber communication systems. It discusses:
1) How the receiver converts received light signals into electrical signals using a photodiode, then amplifies and filters the signals.
2) Common sources of noise and distortion in received signals, such as intersymbol interference caused by pulse spreading over the fiber.
3) How the receiver quantizes the signals to determine the transmitted bits, and key parameters that affect the bit error rate such as the signal-to-noise ratio.
IJCER (www.ijceronline.com) International Journal of computational Engineerin...
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IJCER (www.ijceronline.com) International Journal of computational Engineerin...
The document presents a technique called Edge Oriented Denoising Technique (EODT) to remove impulse noise from images. EODT uses a 7-stage pipelined architecture and requires only low computational complexity and two line memory buffers. It detects noisy pixels using an extreme data detector and estimated corrected values using an edge-oriented noise filter. A VLSI implementation of EODT is also presented, which achieves better image quality than previous methods with lower hardware costs. Simulation results show the technique can correctly identify and remove impulse noise even when noise ratios are as high as 90%.
Varactor diode
1) The document discusses the electrical characteristics of a varactor diode, which is a diode with a variable capacitance that depends on the applied reverse bias voltage.
2) It explains the doping profile and Poisson's equation that governs the electric field and potential distribution in the diode.
3) Equations are derived for the junction capacitance as a function of the applied reverse bias voltage based on the doping profile and boundary conditions of the p-n junction.
ADC Conveter Performance and Limitations.ppt
1. The document discusses performance metrics and measurement techniques for analog-to-digital converters (ADCs). It provides high-level overviews of key ADC performance metrics like effective number of bits (ENOB), integral nonlinearity (INL), and differential nonlinearity (DNL).
2. Measurement techniques like the histogram method are explained, where a histogram of code bin occurrences is used to estimate parameters and characterize the ADC. Simple sine wave fitting using the outmost decision levels is presented as well.
3. An overview of ADC state-of-the-art is given, showing steady improvement in resolution over time but slower improvement in sampling rate. Progress in reducing power consumption and figures of merit has been more rapid.
Hall Effect
This document discusses the Hall effect and its analysis for determining properties of semiconductor materials. The Hall effect can be used to:
1) Distinguish whether a semiconductor is n-type or p-type based on the nature of doping.
2) Measure the majority carrier concentration.
3) Calculate the majority carrier mobility.
The document provides equations to analyze the Hall effect for both n-type and p-type semiconductors and determine values such as Hall voltage, drift velocity, current density, and Hall coefficient.
Solar cell
This document discusses solar cells and photovoltaic effect. It begins by explaining that the available solar radiation bandwidth is 0.124 to 3 eV due to absorption by the ozone layer. Semiconductors with a bandgap in this range are required to convert this solar energy. Solar cells are semiconductor devices that convert sunlight directly into electrical energy using the photovoltaic effect. The photovoltaic effect occurs when photons are absorbed, promoting electrons to leave their atomic orbitals and become conductive. Key solar cell parameters like open circuit voltage, short circuit current, fill factor, and conversion efficiency are also defined and formulas to calculate them are provided. Factors affecting solar cell performance such as resistances, temperature, and band
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Satellite Link Design: Basic Transmission Theory & Noise Temperature
Satellite Link Design: Basic Transmission Theory & Noise Temperature
Generation and Recombination related to Carrier Transport
Generation and Recombination related to Carrier Transport
IJCER (www.ijceronline.com) International Journal of computational Engineerin...
IJCER (www.ijceronline.com) International Journal of computational Engineerin...
IJCER (www.ijceronline.com) International Journal of computational Engineerin...
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Scaling in conventional MOSFET for constant electric field and constant voltage
Scaling in conventional MOSFET for constant electric field and constant voltageRCC Institute of Information Technology
Scaling in conventional MOSFETCarrier scattering and ballistic transport
The document discusses various types of carrier scattering that can occur in semiconductor devices. It describes scattering from ionized impurities, neutral impurities, dipoles, acoustic phonons via deformation potential and piezoelectric potential, optical phonons through polar and nonpolar interactions, and dislocations. It also defines ballistic transport as occurring when the carrier mean free path is longer than the device dimensions, resulting in phase coherent motion without scattering or heat generation.
Electromagnetic Wave Propagations
This document summarizes lecture notes on electromagnetic wave propagation in free space from a course on electromagnetic theory. It begins with an introduction and lists the course details. It then derives Maxwell's equations in free space and shows that they lead to wave equations for the electric and magnetic fields. It is shown that the electric and magnetic field vectors are perpendicular to each other and the propagation vector. Key concepts discussed include the Poynting vector, energy, impedance, phase velocity, wavelength, and the relation between the electric and magnetic fields. Several examples are worked through.
Biot-Savart law
This document contains lecture notes on electromagnetic theory from a course taught by Arpan Deyasi. It discusses the Biot-Savart law, which gives mathematical expressions for the magnetic field created by steady current-carrying wires and distributions of electric current. It also covers the Lorentz force law and how it relates to the combined electric and magnetic forces on a moving charged particle. Examples are presented on calculating magnetic fields and forces. The document concludes by deriving the solenoidal property of magnetic fields.
Ampere's circuital law
This document contains lecture notes on Ampere's circuital law from an Electromagnetic Theory course taught by Arpan Deyasi. It includes the integral and differential forms of Ampere's law, examples of using the law to determine magnetic fields and currents, and a case study of the magnetic field due to an infinite sheet of current. The key points covered are that the line integral of the magnetic field around a closed path equals the total current enclosed, and the curl of the magnetic field equals the current density.
Magnetic Potentials
This document contains lecture notes from a course on electromagnetic theory taught by Arpan Deyasi. It covers topics on magnetic scalar and vector potentials, including their definitions, properties, and applications to problems involving magnetic fields generated by currents. The notes provide the mathematical relationships between magnetic fields and potentials, and work through examples such as calculating the potentials for an infinite solenoid and current-carrying wire.
Reflection and Transmission coefficients in transmission line
Reflection and Transmission coefficients in transmission lineRCC Institute of Information Technology
This document discusses transmission line propagation coefficients including reflection coefficient and transmission coefficient. It defines the reflection coefficient as the ratio of reflected to incident voltage or current. Reflection and transmission coefficients are derived for a transmission line terminated by a load impedance. Standing wave patterns on transmission lines are also analyzed. Key properties of standing waves include maximum and minimum voltages occurring at intervals of half wavelength and voltages/currents being 90 degrees out of phase.Impedance in transmission line
The document discusses transmission line impedance and input impedance. It defines characteristic impedance as the ratio of voltage to current waves travelling along a transmission line. It provides expressions for characteristic impedance in terms of line parameters R, L, G, C. It then derives expressions for input impedance of open circuit, short circuit, matched and mismatched lossless transmission lines. It shows that input impedance is capacitive for a short open circuit line and inductive for a short circuit line.
Distortionless Transmission Line
This document discusses transmission lines and the conditions required for distortionless transmission. It notes that losses in transmission lines can occur due to I2R loss, skin effect, and crystallization. Distortion can arise from amplitude distortion, attenuation distortion, and phase distortion. The conditions for distortionless transmission are that the attenuation constant must be zero and the phase velocity must be independent of frequency. This requires that the line's inductance and capacitance per unit length satisfy LG/RC=1/2. The document also examines propagation constants and phase velocity for lossless transmission lines. It provides examples of calculating phase velocity, propagation constant, and phase wavelength for given line parameters.
Quantum Hall Effect
The document summarizes a lecture on the quantum Hall effect. It defines the quantum Hall effect as a phenomenon where the resistance of a quantum well system is quantized under low temperature and high magnetic field conditions. It then provides calculations to show that the quantum Hall resistance is quantized and equal to h/q^2, where h is Planck's constant and q is the elementary charge. Finally, it discusses how the quantization occurs due to the formation of discrete energy levels called Landau levels in the presence of a magnetic field.
Telegrapher's Equation
This document discusses transmission lines and the Telegrapher's equation. It begins by introducing transmission lines and their parameters such as resistance, inductance, conductance and capacitance per unit length. It then derives the Telegrapher's equation that describes voltage and current on a transmission line. It shows how the equation can be used to find the propagation constant and solve for voltage and current as a function of position and time. It also discusses phase velocity and provides examples of calculating attenuation constant, phase constant, and phase velocity for different transmission line scenarios.
Dielectrics
This document discusses the topic of electrostatics and dielectrics in the Electromagnetic Theory course. It defines a dielectric as a material where charge displacement occurs in an external electric field rather than free motion of charges. Dielectrics are classified as polar or nonpolar depending on whether they have a permanent dipole moment. The types of polarization in dielectrics are electronic, orientation, and ionic polarization. Key concepts discussed include polarization density, polarization charge density, the relationship between polarization and electric field through susceptibility and relative permittivity, atomic polarizability, and the relationship between polarization and electric displacement. An example problem calculates the polarization given the electric displacement.
Capacitor
1) The document discusses different types of capacitors including parallel plate, cylindrical, and spherical capacitors. Equations for electrostatic potential and electric field are derived for each type.
2) Examples problems are worked out on determining the capacitance of a parallel plate capacitor when a dielectric slab is inserted, and the capacitance of a coaxial cylindrical capacitor with dielectrics of different permittivities in each region.
3) Key equations presented include the capacitance of parallel plate, cylindrical, and spherical capacitors in terms of their geometric parameters and dielectric properties.
Electrical Properties of Dipole
1) An electric dipole is formed when two equal but opposite charges are separated by an infinitesimal distance. The dipole moment is defined as the product of the charge magnitude and the distance between them.
2) The electrostatic potential and electric field due to a dipole can be expressed in terms of the dipole moment. The potential and field decrease with increasing distance from the dipole.
3) A torque is experienced by a dipole when placed in an external electric field, with the torque being proportional to the cross product of the dipole moment and the electric field.
Application of Gauss' Law
This document contains lecture notes on electrostatics and the application of Gauss' law from a course on electromagnetic theory taught by Arpan Deyasi. It defines line charge density, surface charge density, and volume charge density. It then uses Gauss' law to derive expressions for the electric field and potential due to different charge distributions, including line charges, surface charges on a ring and plane, and volume charges in a cylinder and sphere. Example problems are worked through applying Gauss' law to find electric fields and potentials for these various charge distributions.
Fundamentals of Gauss' Law
This document discusses Gauss's law and related electromagnetic theory concepts taught in a course. It provides:
1) An overview of Gauss's law, which states that the total outward electric flux through a closed surface is equal to the total charge enclosed divided by the permittivity of the medium.
2) Derivations and proofs of Gauss's law using calculus theorems like divergence theorem.
3) Applications of Gauss's law to problems involving charge distributions and electric field calculations.
4) Discussions of related concepts like Gauss's law in polarized media, current continuity equation, relaxation time, and Poisson's equation.
5) Example problems demonstrating the application of these electromagnetic theory principles.
Fundamentals of Coulomb's Law
This document discusses Coulomb's law and some key concepts in electrostatics, including:
- Coulomb's law describes the electrostatic force between two point charges, being directly proportional to the product of the charges and inversely proportional to the square of the distance between them.
- The electric field intensity and electric flux density are introduced.
- Properties of the electric field such as it being irrotational are examined.
- The electrostatic potential is defined and its relationship to the electric field is explored.
Vector Integration
This document discusses vector calculus theorems including Stokes' theorem and the divergence theorem. Stokes' theorem relates the line integral of a vector field around a closed curve to the surface integral of the curl of the vector field over any surface bounded by the curve. The divergence theorem relates the volume integral of the divergence of a vector field over a volume to the surface integral of the vector field over the boundary surface of that volume. The document provides proofs of these theorems and examples of their applications to problems involving conservative vector fields and evaluating integrals.
Scalar and vector differentiation
This document discusses a course on electromagnetic theory taught by Arpan Deyasi. It covers topics related to vector differentiation, including the vector differential operator in Cartesian, cylindrical and spherical coordinates. It also covers differentiation of scalar functions, including calculating gradients, directional derivatives and finding normals to surfaces. Finally, it discusses differentiation of vector functions, specifically divergence, which represents the volume density of the net outward flux from a vector field.
Coordinate transformation
The document discusses various coordinate transformations between Cartesian, cylindrical, and spherical coordinate systems. It provides the transformation equations for scalar and vector variables between these coordinate systems. Examples are included to demonstrate transforming between Cartesian and cylindrical coordinates for points in both scalar and vector form. The key topics covered are the four types of coordinate transformations, the transformation equations, and examples to illustrate the transformations.
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#Abstract:
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#Prerequisites:
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3:国家专业人才认证中心颁发入库证书
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本公司拥有海外各大学样板无数，能完美还原海外各大学 Bachelor Diploma degree, Master Degree Diploma
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留信网认证的作用:
1:该专业认证可证明留学生真实身份
2:同时对留学生所学专业登记给予评定
3:国家专业人才认证中心颁发入库证书
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5:凡事获得留信网入网的信息将会逐步更新到个人身份内，将在公安局网内查询个人身份证信息后，同步读取人才网入库信息
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Noise performance of p-i-n and APD
- 1. Course: Semiconductor Optoelectronic Devices: Noise performance of p-i-n & APD Course Coordinator: Arpan Deyasi 1/22/2021 1 Arpan Deyasi, RCCIIT, India
- 2. p-i-n Diode: Quantum Efficiency Drift current ( ) 0 1 exp drift J q W φ α = − − − incident photon flux width of ‘i’ layer 1/22/2021 2 Arpan Deyasi, RCCIIT, India
- 3. p-i-n Diode: Quantum Efficiency Diffusion current ( ) 0 0 exp 1 h diffusion N h h h D J qp L L q W L α φ α α = − − − + α: absorption coefficient pN0: hole concentration at the bulk 1/22/2021 3 Arpan Deyasi, RCCIIT, India
- 4. p-i-n Diode: Quantum Efficiency Total current total drift diffusion J J J = + ( ) ( ) 0 0 1 exp exp 1 h total N h h h W D J q qp L W L L α φ α α α − − + = − − − + 1/22/2021 4 Arpan Deyasi, RCCIIT, India
- 5. p-i-n Diode: Quantum Efficiency External quantum efficiency total ext inc J q P Ah η ν = 1/22/2021 5 Arpan Deyasi, RCCIIT, India
- 6. p-i-n Diode: Response Speed External quantum efficiency 3 2 d dB r f t π Γ = ( ) 3 1 2 dB f FWHM = tr: impulse response time 1/22/2021 6 Arpan Deyasi, RCCIIT, India
- 7. p-i-n Diode: Noise performance Pinc: optical power incident on p-i-n diode rms optical power = Pinc/√2 rms photocurrent 2 ext inc ph q P i h η ν = 1/22/2021 7 Arpan Deyasi, RCCIIT, India
- 8. p-i-n Diode: Noise performance shot noise current 2 2 ( ) s ph B D i q i I I B = + + IB: current due to background radiation ID: dark current due to thermally generated EHP’s in depletion region 1/22/2021 8 Arpan Deyasi, RCCIIT, India
- 9. p-i-n Diode: Noise performance mean-square noise current 2 e 4 R B j q k TB i = ( ) 1 1 1 1 e R q D L i R R R − − − − = + + RD: shunt resistance RL: load resistance Ri: input resistance 1/22/2021 9 Arpan Deyasi, RCCIIT, India
- 10. p-i-n Diode: Noise performance total signal power 2 e R ph q S i = total noise power ( ) 2 2 e R s j q N i i = + 1/22/2021 10 Arpan Deyasi, RCCIIT, India
- 11. p-i-n Diode: Noise performance SNR = total signal power total noise power ( ) 2 e 2 2 e R R ph q s j q i SNR i i = + 1/22/2021 11 Arpan Deyasi, RCCIIT, India
- 12. p-i-n Diode: Noise performance 2 e 0.5 4 2 ( ) R ext inc B ph B D q q P h SNR k TB q i I I B η ν = + + + 1/22/2021 12 Arpan Deyasi, RCCIIT, India
- 13. p-i-n Diode: Noise performance Sensitivity of a photodiode is an important characteristic It is defined as minimum input optical power needed to achieve SNR greater than a given value A convenient measure of sensitivity is Noise equivalent Power (NEP) 1/22/2021 13 Arpan Deyasi, RCCIIT, India
- 14. p-i-n Diode: Noise performance When rms signal power becomes equal to NEP photocurrent = noise current NEP is calculated at unit frequency 1/22/2021 14 Arpan Deyasi, RCCIIT, India
- 15. p-i-n Diode: Noise performance 2 e 4 0.5 2 ( ) R ext inc B ph B D q q P k T q i I I h η ν = + + + 0.5 e 4 2 ( ) R 2 inc B ph B D ext q P h k T q i I I q ν η + + + 1/22/2021 15 Arpan Deyasi, RCCIIT, India
- 16. Avalanche photodiode 1/22/2021 16 Arpan Deyasi, RCCIIT, India
- 17. Avalanche photodiode higher level of sensitivity as a result of avalanche gain . Much higher operating voltage may be required . Avalanche photodiode produces a much higher level of noise than a PN photodiode . Avalanche process means that the output is not linear Advantage Disadvantage 1/22/2021 17 Arpan Deyasi, RCCIIT, India
- 18. APD: Noise performance Pinc: optical power incident on p-i-n diode rms optical power = Pinc/√2 rms photocurrent 2 ext inc ph G q P i h η ν = Γ ΓG: internal gain 1/22/2021 18 Arpan Deyasi, RCCIIT, India
- 19. APD: Noise performance shot noise current 2 2 2 ( ) s ph B D G i q i I I B F = + + Γ IB: current due to background radiation ID: dark current due to thermally generated EHP’s in depletion region F: excess noise factor 1/22/2021 19 Arpan Deyasi, RCCIIT, India
- 20. APD: Noise performance mean-square noise current 2 e 4 R B j q k TB i = ( ) 1 1 1 1 e R q D L i R R R − − − − = + + RD: shunt resistance RL: load resistance Ri: input resistance 1/22/2021 20 Arpan Deyasi, RCCIIT, India
- 21. APD: Noise performance total signal power 2 e R ph q S i = total noise power ( ) 2 2 e R s j q N i i = + 1/22/2021 21 Arpan Deyasi, RCCIIT, India
- 22. APD: Noise performance SNR = total signal power total noise power ( ) 2 e 2 2 e R R ph q s j q i SNR i i = + 1/22/2021 22 Arpan Deyasi, RCCIIT, India
- 23. APD: Noise performance 2 2 e 0.5 4 2 ( ) R ext inc G B ph B D G q q P h SNR k TB q i I I B F η ν Γ = + + Γ + 1/22/2021 23 Arpan Deyasi, RCCIIT, India
- 24. APD: Noise performance 2 2 e 4 0.5 2 ( ) R ext inc B G ph B D G q q P k T q i I I F h η ν Γ = + + Γ + 0.5 2 e 2 4 2 ( ) R inc ext G B ph B D G q P h q k T q i I I F ν η = × Γ + + Γ + 1/22/2021 24 Arpan Deyasi, RCCIIT, India