MRAM stands for Magneto resistive Random Access Memory. It uses magnetic fields rather than electrical charges to store and randomly access data in a non-volatile manner, keeping information even when power is turned off. MRAM has the potential to replace SRAM, DRAM and Flash memory by offering read and write speeds that are faster than Flash but slower than SRAM and DRAM, while also being non-volatile like Flash. An MRAM bit cell consists of two ferromagnetic layers separated by an insulating tunnel barrier, and data is written and read via the magnetic orientation of the layers.

1. “ MRAM “
BY SYED HUZAIFA
STUDENT OF MEHRAN UNIVERSITY OF ENGINEERING AND TECHNOLOGY
JAMSHORO (SINDH)
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2. MRAM
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3. MRAM
Stands for Magneto resistive Random Access
Memory
MRAM uses magnetic fields rather electrical
charges to store and randomly access data
NON VOLATILE: information save when there is
power
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4. MRAMcapable of replacing SRAM,DRAMand FLASH memory.
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5. Comparison of expected MRAM features with other memory
technologies.
SRAM DRAM Flash MRAM
Read Time Fast Moderate Moderate Moderate
fast
Write time Fast Moderate Slow Moderate
fast
Non-volatile No No Yes Yes
Refresh N/A Yes N/A N/A
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6. Construction of
MRAM
• MRAM bit cell
consist of two
ferromagnetic
layers.
• Layers are
separated by an
insulating tunnel
barrier in a
sandwich like
structure.
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7. MRAM
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8. MRAM reading/writing process.
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10. Syedhuzaifa9090@gmail.com
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