At a time when the end of Moore's Law is imminent, the quest for a suitable alternative finds a possible destination at Spintronicsl trlying on the spin of an electron instead of its charge. Magnetoresistive RAM uses electron spin and associated magnetic moment for memory purposes.
MRAM promises to be the Holy Grail of the memory world, promising features like amazingly high endurance, low power, non volatility, reduced read and write times, among many others.
for presenting students only:)
a clear concept and useful for 10 minute presentation.
images that helps you to discribe the slides.
have fun:) keep remember that this is basic concepts so i preffer it for MCA andCE students only. thank you.
In this presentation file, i have briefly explained about Spintronics. it is a really new and a good concept for pressentation purpose. Hope it is helpful to you.
At a time when the end of Moore's Law is imminent, the quest for a suitable alternative finds a possible destination at Spintronicsl trlying on the spin of an electron instead of its charge. Magnetoresistive RAM uses electron spin and associated magnetic moment for memory purposes.
MRAM promises to be the Holy Grail of the memory world, promising features like amazingly high endurance, low power, non volatility, reduced read and write times, among many others.
for presenting students only:)
a clear concept and useful for 10 minute presentation.
images that helps you to discribe the slides.
have fun:) keep remember that this is basic concepts so i preffer it for MCA andCE students only. thank you.
In this presentation file, i have briefly explained about Spintronics. it is a really new and a good concept for pressentation purpose. Hope it is helpful to you.
Spintronics is a NANO technology which deals with spin dependent properties of an electron instead of charge dependent properties.
One of the main advantage of spintronics over electronics is the magnets tend to stay magnetize which is sparking in the industry an interest for replacing computer’s semiconductor based components with magnetic ones, starting with the RAM.
With an all-magnetic RAM, it is now possible to have a computer that retains all the information put into it. Most importantly, there will be no ‘boot-up’ waiting period when power is turned on.
Another promising feature of spintronics is that it doesn’t require the use of unique and specialized semiconductor, there by allowing it to work with common metals like Cu, Al, Ag.
Spintronics will use less power than conventional electronics, because the energy needed to change spin is a minute fraction of what is needed to push charge around.
Conventional electronic devices ignore the spin property and rely strictly on the transport of the electrical charge of electrons.
Adding the spin degree of freedom provides new effects, new capabilities and new functionalities.
very basic introduction of newly emerging technology in electronics called SPINTRONICS.
Quantum mechanics property called SPIN based electronics technology using both quantum mechanical and electronics property of electron i.e "SPIN+ELECTRONICS=SPINTRONICS"
IEEE presentation based on Spintronics & its semiconductor application specifically.
In the conclusion there is a hyperlink of a video which i'm unable to put here and hence i will give you the address of the video so that you can use the video and make the same hyperlink as i had made here.
TEDxCaltech-David Awschalom - Spintronics ( On YouTube)
video : 6:21- 7:13 (in video)
a branch of nano electronics that will improve technology by adding new freedom degrees to electronic for transfer and store information better than electronic devices :)
Very basic introduction to latest emerging technology in electronics called SPINTRONICS.
Quantum Mechanics property of electron called SPIN combine with the electronic property of electron .i.e SPIN+ELECTRONICS=SPINTRONICS
The developing technology, the future, a tech that can replace the electronics era itself.
Few information about the tech and the fundamentals of Spintronics.
Spintronics is a NANO technology which deals with spin dependent properties of an electron instead of charge dependent properties.
One of the main advantage of spintronics over electronics is the magnets tend to stay magnetize which is sparking in the industry an interest for replacing computer’s semiconductor based components with magnetic ones, starting with the RAM.
With an all-magnetic RAM, it is now possible to have a computer that retains all the information put into it. Most importantly, there will be no ‘boot-up’ waiting period when power is turned on.
Another promising feature of spintronics is that it doesn’t require the use of unique and specialized semiconductor, there by allowing it to work with common metals like Cu, Al, Ag.
Spintronics will use less power than conventional electronics, because the energy needed to change spin is a minute fraction of what is needed to push charge around.
Conventional electronic devices ignore the spin property and rely strictly on the transport of the electrical charge of electrons.
Adding the spin degree of freedom provides new effects, new capabilities and new functionalities.
very basic introduction of newly emerging technology in electronics called SPINTRONICS.
Quantum mechanics property called SPIN based electronics technology using both quantum mechanical and electronics property of electron i.e "SPIN+ELECTRONICS=SPINTRONICS"
IEEE presentation based on Spintronics & its semiconductor application specifically.
In the conclusion there is a hyperlink of a video which i'm unable to put here and hence i will give you the address of the video so that you can use the video and make the same hyperlink as i had made here.
TEDxCaltech-David Awschalom - Spintronics ( On YouTube)
video : 6:21- 7:13 (in video)
a branch of nano electronics that will improve technology by adding new freedom degrees to electronic for transfer and store information better than electronic devices :)
Very basic introduction to latest emerging technology in electronics called SPINTRONICS.
Quantum Mechanics property of electron called SPIN combine with the electronic property of electron .i.e SPIN+ELECTRONICS=SPINTRONICS
The developing technology, the future, a tech that can replace the electronics era itself.
Few information about the tech and the fundamentals of Spintronics.
The future memory device which is currently under development by IBM. Race track memory overcomes both the limitations of hard disk and solid state memory by giving high storage density than solid state drive and high transfer speed than hard disk at low price .
Conventional electronic devices
ignore the spin property and
rely strictly on the transport
of the electrical charge of
electrons
*Adding the spin degree of
freedom provides new effects,
new capabilities and new
functionalities.
Advantages of Spin
Information is stored into spin as one of two possible orientations
Spin lifetime is relatively long, on the order of nanoseconds
Spin currents can be manipulated
Spin devices may combine logic and storage functionality eliminating the need for separate components
Magnetic storage is nonvolatile
Binary spin polarization offers the possibility of applications as qubits in quantum computers
Resistive RAMs are non-volatile RAMs and with the help of Nanomaterials we can make them faster in switching speed,smaller in size and store information in "Terabit" scale or more.In a nutshell "a revolution in the market of memory devices".
What is greenhouse gasses and how many gasses are there to affect the Earth.moosaasad1975
What are greenhouse gasses how they affect the earth and its environment what is the future of the environment and earth how the weather and the climate effects.
Earliest Galaxies in the JADES Origins Field: Luminosity Function and Cosmic ...Sérgio Sacani
We characterize the earliest galaxy population in the JADES Origins Field (JOF), the deepest
imaging field observed with JWST. We make use of the ancillary Hubble optical images (5 filters
spanning 0.4−0.9µm) and novel JWST images with 14 filters spanning 0.8−5µm, including 7 mediumband filters, and reaching total exposure times of up to 46 hours per filter. We combine all our data
at > 2.3µm to construct an ultradeep image, reaching as deep as ≈ 31.4 AB mag in the stack and
30.3-31.0 AB mag (5σ, r = 0.1” circular aperture) in individual filters. We measure photometric
redshifts and use robust selection criteria to identify a sample of eight galaxy candidates at redshifts
z = 11.5 − 15. These objects show compact half-light radii of R1/2 ∼ 50 − 200pc, stellar masses of
M⋆ ∼ 107−108M⊙, and star-formation rates of SFR ∼ 0.1−1 M⊙ yr−1
. Our search finds no candidates
at 15 < z < 20, placing upper limits at these redshifts. We develop a forward modeling approach to
infer the properties of the evolving luminosity function without binning in redshift or luminosity that
marginalizes over the photometric redshift uncertainty of our candidate galaxies and incorporates the
impact of non-detections. We find a z = 12 luminosity function in good agreement with prior results,
and that the luminosity function normalization and UV luminosity density decline by a factor of ∼ 2.5
from z = 12 to z = 14. We discuss the possible implications of our results in the context of theoretical
models for evolution of the dark matter halo mass function.
This presentation explores a brief idea about the structural and functional attributes of nucleotides, the structure and function of genetic materials along with the impact of UV rays and pH upon them.
Comparing Evolved Extractive Text Summary Scores of Bidirectional Encoder Rep...University of Maribor
Slides from:
11th International Conference on Electrical, Electronics and Computer Engineering (IcETRAN), Niš, 3-6 June 2024
Track: Artificial Intelligence
https://www.etran.rs/2024/en/home-english/
Deep Behavioral Phenotyping in Systems Neuroscience for Functional Atlasing a...Ana Luísa Pinho
Functional Magnetic Resonance Imaging (fMRI) provides means to characterize brain activations in response to behavior. However, cognitive neuroscience has been limited to group-level effects referring to the performance of specific tasks. To obtain the functional profile of elementary cognitive mechanisms, the combination of brain responses to many tasks is required. Yet, to date, both structural atlases and parcellation-based activations do not fully account for cognitive function and still present several limitations. Further, they do not adapt overall to individual characteristics. In this talk, I will give an account of deep-behavioral phenotyping strategies, namely data-driven methods in large task-fMRI datasets, to optimize functional brain-data collection and improve inference of effects-of-interest related to mental processes. Key to this approach is the employment of fast multi-functional paradigms rich on features that can be well parametrized and, consequently, facilitate the creation of psycho-physiological constructs to be modelled with imaging data. Particular emphasis will be given to music stimuli when studying high-order cognitive mechanisms, due to their ecological nature and quality to enable complex behavior compounded by discrete entities. I will also discuss how deep-behavioral phenotyping and individualized models applied to neuroimaging data can better account for the subject-specific organization of domain-general cognitive systems in the human brain. Finally, the accumulation of functional brain signatures brings the possibility to clarify relationships among tasks and create a univocal link between brain systems and mental functions through: (1) the development of ontologies proposing an organization of cognitive processes; and (2) brain-network taxonomies describing functional specialization. To this end, tools to improve commensurability in cognitive science are necessary, such as public repositories, ontology-based platforms and automated meta-analysis tools. I will thus discuss some brain-atlasing resources currently under development, and their applicability in cognitive as well as clinical neuroscience.
Introduction:
RNA interference (RNAi) or Post-Transcriptional Gene Silencing (PTGS) is an important biological process for modulating eukaryotic gene expression.
It is highly conserved process of posttranscriptional gene silencing by which double stranded RNA (dsRNA) causes sequence-specific degradation of mRNA sequences.
dsRNA-induced gene silencing (RNAi) is reported in a wide range of eukaryotes ranging from worms, insects, mammals and plants.
This process mediates resistance to both endogenous parasitic and exogenous pathogenic nucleic acids, and regulates the expression of protein-coding genes.
What are small ncRNAs?
micro RNA (miRNA)
short interfering RNA (siRNA)
Properties of small non-coding RNA:
Involved in silencing mRNA transcripts.
Called “small” because they are usually only about 21-24 nucleotides long.
Synthesized by first cutting up longer precursor sequences (like the 61nt one that Lee discovered).
Silence an mRNA by base pairing with some sequence on the mRNA.
Discovery of siRNA?
The first small RNA:
In 1993 Rosalind Lee (Victor Ambros lab) was studying a non- coding gene in C. elegans, lin-4, that was involved in silencing of another gene, lin-14, at the appropriate time in the
development of the worm C. elegans.
Two small transcripts of lin-4 (22nt and 61nt) were found to be complementary to a sequence in the 3' UTR of lin-14.
Because lin-4 encoded no protein, she deduced that it must be these transcripts that are causing the silencing by RNA-RNA interactions.
Types of RNAi ( non coding RNA)
MiRNA
Length (23-25 nt)
Trans acting
Binds with target MRNA in mismatch
Translation inhibition
Si RNA
Length 21 nt.
Cis acting
Bind with target Mrna in perfect complementary sequence
Piwi-RNA
Length ; 25 to 36 nt.
Expressed in Germ Cells
Regulates trnasposomes activity
MECHANISM OF RNAI:
First the double-stranded RNA teams up with a protein complex named Dicer, which cuts the long RNA into short pieces.
Then another protein complex called RISC (RNA-induced silencing complex) discards one of the two RNA strands.
The RISC-docked, single-stranded RNA then pairs with the homologous mRNA and destroys it.
THE RISC COMPLEX:
RISC is large(>500kD) RNA multi- protein Binding complex which triggers MRNA degradation in response to MRNA
Unwinding of double stranded Si RNA by ATP independent Helicase
Active component of RISC is Ago proteins( ENDONUCLEASE) which cleave target MRNA.
DICER: endonuclease (RNase Family III)
Argonaute: Central Component of the RNA-Induced Silencing Complex (RISC)
One strand of the dsRNA produced by Dicer is retained in the RISC complex in association with Argonaute
ARGONAUTE PROTEIN :
1.PAZ(PIWI/Argonaute/ Zwille)- Recognition of target MRNA
2.PIWI (p-element induced wimpy Testis)- breaks Phosphodiester bond of mRNA.)RNAse H activity.
MiRNA:
The Double-stranded RNAs are naturally produced in eukaryotic cells during development, and they have a key role in regulating gene expression .
2. Outline
• Introduction
• Magnetic Core RAM
• Magnetoresistance
• Giant Magnetoresistance (GMR)
• Tunnel Magnetoresistance (TMR)
• Spin Valve
• MRAM
• Fixed Layer
• Reading Process
• Writing Process
• Characteristics
• Other RAM Technologies
• MRAM Vs Other RAM Technologies
• Future MRAM Improvements
• MRAM Status
3. Introduction
• Why can’t your pc simply turn on like your television?
• MRAM uses magnetism rather than electrical power to
store bits of data.
• No refresh is needed to retain the data.
• For users of laptops and other mobile devices, such as MP3
players and cell phones, MRAM is the holy grail of longer
battery life.
4. Magnetic Core RAM
By the early 1960’s, Magnetic Core RAM became largely universal
as main memory, replacing drum memory
5. Magnetic Core RAM
• The memory cells
consist of wired threaded
tiny ferrite rings (cores).
• X and Y lines to apply
the magnetic filed.
• Sense/Inhibit line to
‘read’ the current pulse
when the polarization of
the magnetic field
changes.
6. Giant Magnetoresistance (GMR)
Two thin films of altering
ferromagnetic materials
and a non-magnetic layer-
spacer.
(%)
R RR
GMR
R R
↑↓ ↑↑
↑↑ ↑↑
−∆
= = 10-80% decrease in electrical resistance
7. Tunnel Magnetoresistance (TMR)
Two thin films of altering
ferromagnetic materials
and an insulating spacer.
600 (room temperature)-1100 (4.2 K) % TMR at junctions
of CoFeB/MgO/CoFeB
Fe/MgO/Fe junctions reach over 200% decrease in electrical
resistance at room temperature
8. Tunnel Magnetoresistance (TMR)
In ferromagnetic metals electronic bands are exchange split
which implies different densities of states at the Fermi energy
for the up- and down-spin electrons.
9. Tunnel Magnetoresistance (TMR)
• Spin of electrons is conserved in
the tunneling process.
• Tunneling of up- and down-spin
electrons are two independent
processes → conductance occurs in
the two independent spin channels.
• Electrons originating from one
spin state of the first ferromagnetic
film are accepted by unfilled states
of the same spin of the second film.
10. Spin Valve GMR
• Hard layer: magnetization
is fixed.
• Soft layer: magnetization is
free to rotate.
• Thin non-ferromagnetic
spacer ~3 nm.
• Spacer material Cu (copper)
and ferromagnetic layers
NiFe (permalloy).
• This configuration used
in hard drives.
11. Magnetic Tunnel Junction (MTJ)
Commonly used insulating materials are Aluminum oxide (Al2O3) and
crystalline Magnesium oxide (MgO)
12. MRAM
One of the two plates is a permanent magnet set to a particular
polarity, the other's field will change to match that of an external
field.
13. MRAM: Fixed layer
The bottom layers give an effect of fixed (pinned) layer due to interlayer
exchange coupling between ferromagnetic and spacer layer of synthetic
antiferromagnetic.
14. MRAM: Reading process
• Transistor is “ON”
• Measuring of electrical
resistance of a small sense
current from a supply line
through the cell to the
ground.
15. MRAM: Writing process
• Transistor is “OFF”
• When current is passed
through the write lines,
an induced magnetic
field is created at the
junction, which alters the
polarity of the free layer.
16. MRAM: Writing process
• In order to change the
polarity of the free layer,
both fields are necessary.
• Only the bit in which
current is applied in both
hard and easy axis will be
written. The other bits will
remain half-select.
18. Other RAM Technologies
Each bit of data is stored in a
separate capacitor within an
integrated circuit
Characteristics
• Volatile
• The highest density RAM
currently available
• The least expensive one
• Moderately fast
DRAM
19. Other RAM Technologies
Each bit is stored on four
transistors that form two cross-
coupled inverters
Characteristics
• Expensive
• Volatile
• Fast
• Low power consumption
• Less dense than DRAM
SRAM
20. Other RAM Technologies
Flash RAM
Stores information in an array
of memory cells made from
floating-gate transistors
Characteristics
• Cheap
• Non-volatile
• Slow
• Enormously durable
• Limited endurance
22. MRAM Vs Other RAM Technologies
MRAM combines the
best characteristics of
DRAM, SRAM and
Flash RAM
23. Future MRAM Improvements
Thermal Assisted Switching
• Solves the first-generation
selectivity and stability
problems
• Cost-effective and scalable
memory technology to at least
the 32nm node
24. Future MRAM Improvements
Spin Torque Transfer
• No applied magnetic field
• Utilizes heavily spin
polarized current
• The magnetization of nano-
elements is flipped back and
forth
• Still has challenges in basic
physics and materials to
overcome
25. MRAM Status
• 2003 - A 128 kbit MRAM chip was introduced, manufactured with a 180 nm
lithographic process
• 2004 - Infineon unveiled a 16-Mbit prototype, manufactured with a 180 nm
lithographic process
•2005 - Sony announced the first lab-produced spin-torque-transfer MRAM
• 2007 - Tohoku University and Hitachi developed a prototype 2 Mbit Non-
Volatile RAM Chip employing spin-transfer torque switching
• 2008 - Scientists in Germany have developed next-generation MRAM that is
said to operate with write cycles under 1 ns.
• 2009 - Hitachi and Tohoku University demonstrated a 32-Mbit spin-transfer
torque RAM (SPRAM)
