A presentation on MRAM
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This document provides an overview of MRAM (Magnetoresistive Random Access Memory) technology. It discusses how MRAM uses magnetization to store data non-volatility and can offer fast write speeds, low power consumption, and unlimited write endurance compared to other non-volatile memories like flash. The document traces the development of MRAM from early AMR (Anisotropic Magnetoresistance) materials to later GMR (Giant Magnetoresistance) and SDT (Spin Dependent Tunneling) materials which improved signal levels and scaling. It also covers cell designs, reading/writing methods, competing technologies, applications and commercialization opportunities for MRAM.
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for presenting students only:)
a clear concept and useful for 10 minute presentation.
images that helps you to discribe the slides.
have fun:) keep remember that this is basic concepts so i preffer it for MCA andCE students only. thank you.
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This document discusses spintronics, which uses electron spin rather than charge to store and transmit information. It describes giant magnetoresistance (GMR) and how controlling electron spin can enable lower power devices like MRAM and spin transistors. These spintronic devices could combine data storage, processing and communication on a single chip. While promising faster speeds and denser integration, challenges remain in controlling spin over long distances and integrating spintronic techniques with semiconductor technology.
Spintronics
The document discusses spintronics and MRAM technology. MRAM is a developing non-volatile memory technology that has rewriting speeds comparable to volatile RAM. It stores data using magnetic charges instead of electrical charges like DRAM. Using MRAM would lead to better power consumption since it requires fewer memory refreshes. If MRAM replaced other non-volatile memory technologies, it could virtually eliminate computer boot-up times by storing the entire software state after a computer is turned off.
Memristors
Memristors are a fourth fundamental circuit element that relates electrical charge and magnetic flux linkage. Its resistance depends on the amount and direction of charge that has previously flowed through it. Memristors were first theorized in 1971 and the first functioning memristor was built in 2008. There are two main types - molecular/ionic thin film memristors which use material properties like titanium dioxide, and spin-based memristors which use electron spin. Memristors have applications in non-volatile memory, AI, and neuromorphic computing due to advantages like non-volatility, low power usage, and ability to mimic synaptic behavior. Extensive research continues on memristors which may revolutionize computing and memory like the transistor
Low power variation-tolerant nonvolatile lookup table design
Low power variation-tolerant nonvolatile lookup table design Low power variation-tolerant nonvolatile lookup table design Low power variation-tolerant nonvolatile lookup table design Low power variation-tolerant nonvolatile lookup table design
Energy optimization of 6T SRAM cell using low-voltage and high-performance in...
The performance of the cell deteriorates, when static random access memory (SRAM) cell is operated below 1V supply voltage with continuous scale down of the complementary metal oxide semiconductor (CMOS) technology. The conventional 6T, 8T-SRAM cells suffer writeability and read static noise margins (SNM) at low-voltages leads to degradation of cell stability. To improve the cell stability and reduce the dynamic power dissipation at low- voltages of the SRAM cell, we proposed four SRAM cells based on inverter structures with less energy consumption using voltage divider bias current sink/source inverter and NOR/NAND gate using a pseudo-nMOS inverter. The design and implementation of SRAM cell using proposed inverter structures are compared with standard 6T, 8T and ST-11T SRAM cells for different supply voltages at 22-nm CMOS technology exhibit better performance of the cell. The read/write static noise margin of the cell significantly increases due to voltage divider bias network built with larger cell-ratio during read path. The load capacitance of the cell is reduced with minimized switching transitions of the devices during high-to-low and low- to-high of the pull-up and pull-down networks from VDD to ground leads to on an average 54% of dynamic power consumption. When compared with the existing ones, the read/write power of the proposed cells is reduced to 30%. The static power gets reduced by 24% due to stacking of transistors takes place in the proposed SRAM cells as compare to existing ones. The layout of the proposed cells is drawn at a 45-nm technology, and occupies an area of 1.5 times greater and 1.8 times greater as compared with 6T-SRAM cell.
MTJ-Based Nonvolatile 9T SRAM Cell
This paper presents a spin-transfer torque- magnetic
tunnel junction (STT-MTJ) based non-volatile 9-transistor
(9T) SRAM cell. The cell achieves low power dissipation due
to its series connected MTJ elements and read buffer which
offer stacking effect. The paper studies the impact of PVT
(process, voltage, and temperature) variations on the design
metric of the SRAM cell such as write delay and compares the
results with non-volatile 8T SRAM cell (NV8T). The proposed
design consumes lower leakage power and exhibits narrower
spread in write delay compared with NV8T.
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Nvram applications in the architectural revolutions of main memory implementa...
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Low power variation-tolerant nonvolatile lookup table design
Low power variation-tolerant nonvolatile lookup table design
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