Seminar report on memristors, the 4th basic element. (Includes future uses as well)

1. MEMRISTORS
Submitted By:
Vipul Pandey
1102732062
The 4th Basic circuit element.

2. Overview:
Introduction
History
Working Principle
Types and Construction
Future uses and applications
Conclusion

3. INTRODUCTION:
Made from concatenation of word
MEMory + ResISTOR.
Relates electrical charge and magnetic flux linkage.
Its current resistance depends on how much electric
charge has flowed in what direction through it in the
past.
These devices are intended for applications
in nanoelectronic memories, computer logic
and neuromorphic computer architectures.

4. FIGURE:
Analogy between
Capacitor,
Inductor,
Resistor and a
Memristor.

5. HISTORY:
1808
Sir Humphry Davy is claimed by Leon Chua to have
performed the first experiments showing the effects of a
memristor.
1960
Bernard Widrow coins the term memistor (i.e. memory
resistor) to describe components of an early artificial neural
network called ADALINE.

7. 2012
On March 23 HRL Laboratories and the University of
Michigan announced the first functioning memristor array
built on a CMOS chip for applications
in neuromorphic computer architectures.
2013
On February 27 Thomas et al., constructed a memristor
capable of learning. The approach utilizes memristors as
key components in a blueprint for an artificial brain.

8. Device
Characteristic property
(units)
Differential equation
Resistor
Resistance (V per A,
or Ohm, Ω)
R = dV / dI
Capacitor
Capacitance (C per V,
or Farads)
C = dq / dV
Inductor
Inductance (Wb per A,
or Henrys)
L = dΦm / dI
Memristor
Memristance (Wb per C,
or Ohm)
M = dΦm / dq
Working
Principle:

9. The memristor was originally defined in terms of a non-linear
functional relationship between magnetic flux linkage Φm(t) and the
amount of electric charge that has flowed, q(t):
It can be inferred from this that memristance is charge-
dependent resistance.

10. Types
1. Molecular and Ionic Thin Film Memristive Systems
• Titanium dioxide memristors.
• Polymeric (Ionic) memristors.
• Manganite memristive systems.
• Resonant-Tunneling diode memristors.
• Silicon oxide memristors.
2. Spin Based and Magnetic memristive systems
• Spintronic memristors.
• Spin torque transfer (STT) MRAM

11. Molecular and Ionic Thin Film
Memristive Systems
These type of memristors primarily rely on different material
properties of thin film atomic lattices that exhibit hysteresis
under the application of charge.

12. Titanium dioxide memristor
• Composed of a Titanium
Dioxide film between two 5 nm
thick electrodes.
• Titanium dioxide changes its
resistance in the presence of
oxygen, which is why its used
in oxygen sensors.
• To access the memristive
properties, crossbars of
nanowires are placed above and
below the top and bottom
layers, so that a charge can be
passed through.

13. Spin Based and Magnetic
memristive systems
Spin-based memristive systems, as opposed to molecular and
ionic nanostructure based systems, rely on the property of
degree of freedom in electron spin.

14. Spintronic Memristor
• Resistance is caused by the spins of the electrons.
• Electrons flowing into the device have a certain spin,
which alters the magnetization state of the device.
Spin Torque Transfer Magnetoresistance
• The resistance here is dependent on the relative spin
orientation between two sides of a magnetic tunnel
junction.
• This in turn is controlled by the spin torque induced by
the current flowing through the junction.

15. ADVANTAGES

16. Memristors do not have the limitations of resistors.
1. Memory resistors do not have the theoretical
heat limitations.
2. Memory resistors are smaller and can be
stacked for increased capacity per cubic space.
3. They use less energy, and they can be used for
processing and memory storage.
4. Even better, memory resistors are faster, and
can store more data.
5. Best of all they retain that memory; they do not
have a boot-up delay.

17. Applications
And
FUTURE SCOPE

18. Used as RRAM
• Resistive random-access memory (RRAM) is a new
non-volatile memory type which promises to replace
the existing flash memory
• Resistive switching memories are based on materials
whose resistivity can be electrically switched between
high and low conductive states. RRAM has superior
intrinsic scaling characteristics compared to the charge-
based Flash devices, and potentially small cell size.

19. • Non-Volatile memory.
• Booting free computer.
• Artificial Intelligence.
• Memristor patents include applications
in programmable logic, signal processing, neural
networks, control systems, reconfigurable
computing, brain-computer interfaces.

21. Extensive research is being done over the
memristor technology.
It is sure that Memristor is going to
revolutionaries the 21st century as radically as
the transistor in the 20th century.
CONCLUSION

22. REFERENCES
• www.memristors.org
• Wikipedia
• Outsideinnovation.blogs.com
• Eweek.com
• Techradar.com
• Prnewswire.com
• http://technorati.com/technology/embedded/article/memristors-technology-
breakthrough/
• http://spectrum.ieee.org/semiconductors/devices/spintronic-memristors
• http://egodwin2.blogspot.in/2009/10/memristors-advantages-and-
disadvantages.html

23. THANK YOU !