L8 thyristor gate characteristics
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Part of Lecture series on EE321N, Power Electronics-I delivered by me during Fifth Semester of B.Tech. Electrical Engg., 2012 Z H College of Engg. & Technology, Aligarh Muslim University, Aligarh Please comment and feel free to ask anything related. Thanks!
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Here are the steps to solve this problem:
a) Given: Generator is 6 pole, 50 Hz
Using the synchronous speed formula: nm = 120f/P
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b) Terminal voltage at different power factors:
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Ea = Vt + IaXs = 480 + 60*1 = 540 V
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Part of Lecture series on EE321N, Power Electronics-I delivered by me during Fifth Semester of B.Tech. Electrical Engg., 2012
Z H College of Engg. & Technology, Aligarh Muslim University, Aligarh
Please comment and feel free to ask anything related. Thanks!
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M.MURUGANANDAM. M.E.,(Ph.D).,MIEEE.,MISTE,
Assistant Professor & Head / EIE,
Muthayammal Engineering College,
Rasipuram,
Namakkal-637 408.
Cell No: 9965768327
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A reluctance motor is a type of electric motor that induces non-permanent magnetic poles on the ferromagnetic rotor. The rotor does not have any windings. It generates torque through magnetic reluctance.
Reluctance motor sub types include synchronous, variable, switched and variable stepping.
Reluctance motors can deliver high power density at low cost, making them attractive for many applications. Disadvantages include high torque ripple (the difference between maximum and minimum torque during one revolution) when operated at low speed, and noise due to torque ripple.
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L8 thyristor gate characteristics
- 2. EE-321 N Lecture-8 Thyristor Gate Characteristics
- 3. Typical Switching Arrangement for SCR 16-Oct-12 EE-321N, Lec-8 3 IG
- 4. Introduction • A thyristor can be triggered by the application of +VG and hence a +IG supplied from a gate drive circuit as shown • However, the choice of (VG , IG) is not restricted to a particular value, rather it varies over a wide range • It depends on the gate characteristics of the device as shown next • Any operating point (VG,IG) within the safe/preferred gate drive area can be selected 416-Oct-12 EE-321N, Lec-8
- 5. Typical Gate Characteristics of SCR 16-Oct-12 EE-321N, Lec-8 5 t u v’t’ v u’
- 6. Explanation 616-Oct-12 EE-321N, Lec-8 • Above characteristics show the variation of VG as a function of IG • Some authors refer to this as characteristics that of a diode b’coz G-K junction is a pn junction • The preferred gate drive area is mtt’uu’vv’m which is bounded by the curves 1 to 5
- 7. Contd... • Curves 1 & 2 correspond to the max possible spread of the characteristics of the thyristor of the same type. This is due to inadvertent difference in doping of p and n layers • Curve 3 represents a constant value of the maximum permissible gate power dissipation PGM • Lines 4 & 5 outline the max limits for gate voltage VGM and max gate current IGM 16-Oct-12 EE-321N, Lec-8 7
- 8. Contd... • VGD is the minimum gate voltage below which a thyristor cannot be triggered at any temperature (normally up to 100 °C) • If the firing ckt generates a +ve gate signal before the desired instant of triggering, it should be ensured that it is < VGD. Similarly, all noise signals should be < VGD • Rectangle mnop is the area of unsuccessful triggering and is specified by manufacturers 16-Oct-12 EE-321N, Lec-8 8
- 9. Contd... • For lower temperature, VGT and IGT increase and therefore the size of the rectangle mnop increases • It should also be ensured that the gate circuit load line should pass through the safe drive area • Most preferred zone is close to curve 3 which in turn ↑s di/dt capability, minimizes turn ON time and ↓s switching losses 16-Oct-12 EE-321N, Lec-8 9
- 10. Design Considerations 16-Oct-12 EE-321N, Lec-8 10 Next Turn
- 11. 16-Oct-12 EE-321N, Lec-8 11
- 12. 16-Oct-12 EE-321N, Lec-8 12