This document discusses different methods for turning on or triggering an SCR (silicon controlled rectifier). It describes gate triggering as the most common and efficient method, where a positive voltage applied between the gate and cathode terminals injects electrons to cause breakdown at junction J2. It also discusses forward voltage, temperature, dv/dt, and light triggering but indicates they have disadvantages like requiring high voltages, causing thermal runaway, or producing high voltage spikes. Pulse triggering with a single pulse or train of pulses through a pulse transformer is highlighted as the most popular gate triggering method to reduce gate losses.