This document presents research on certain subclasses of univalent functions. Specifically, it studies the class WR(λ,β,α,μ,θ) which consists of analytic and univalent functions with negative coefficients in the open disk, defined by the Hadamard product with the Rafid operator. The paper obtains coefficient bounds and extreme points for this class. It also examines the weighted mean, arithmetic mean, and derives some additional results for the class.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach
based on manufacturing field-effect transistors in heterostructures and optimization of technological
processes. At the same time we consider possibility to simplify their constructions.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
Radix-3 Algorithm for Realization of Discrete Fourier TransformIJERA Editor
In this paper, a new radix-3 algorithm for realization of discrete Fourier transform (DFT) of length N = 3m (m =
1, 2, 3,...) is presented. The DFT of length N can be realized from three DFT sequences, each of length N/3. If
the input signal has length N, direct calculation of DFT requires O (N
2
) complex multiplications (4N
2
real
multiplications) and some additions. This radix-3 algorithm reduces the number of multiplications required for
realizing DFT. For example, the number of complex multiplications required for realizing 9-point DFT using the
proposed radix-3 algorithm is 60. Thus, saving in time can be achieved in the realization of proposed algorithm.
MODELING OF REDISTRIBUTION OF INFUSED DOPANT IN A MULTILAYER STRUCTURE DOPANT...mathsjournal
In this paper we used an analytical approach to model nonlinear diffusion of dopant in a multilayer structure with account nonstationary annealing of the dopant. The approach do without crosslinking solutions at
the interface between layers of the multilayer structure. In this paper we analyzed influence of pressure of
vapor of infusing dopant during doping of multilayer structure on values of optimal parameters of technological process to manufacture p-n-junctions. It has been shown, that doping of multilayer structures by
diffusion and optimization of annealing of dopant gives us possibility to increase sharpness of p-n-junctions
(single p-n-junctions and p-n-junctions within transistors) and to increase homogeneity of dopant distribution in doped area.
In an earlier paper in 2017, Rastogi and Bajpai[1] defined and studied a special vector field of the first kind in a Finsler space as follows:
Definition 1: A vector field Xi(x), in a Finsler space, is said to be a special vector field of the first kind, if (i) Xi/j = - δij and (ii) Xi hij = Ɵj, where Ɵj is a non-zero vector field in the given Finsler space.
In 2019, some more special vector fields in a Finsler space of two and three dimensions have been defined and studied by the authors Dwivedi et al.[2] and Dwivedi et al.[3] In Dwivedi et al.[3], the authors defined and studied six kinds of special vector fields in a Finsler space of three dimensions and, respectively, called them special vector fields of the second, third, fourth, fifth, sixth, and seventh kind. In the present paper, we shall study some curvature properties of special vector fields of the first and seventh kind in a Finsler space of three dimensions.
On optimization ofON OPTIMIZATION OF DOPING OF A HETEROSTRUCTURE DURING MANUF...ijcsitcejournal
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δ-
doped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After
the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize
annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more
compact p-i-n-heterodiodes
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach
based on manufacturing field-effect transistors in heterostructures and optimization of technological
processes. At the same time we consider possibility to simplify their constructions.
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
Radix-3 Algorithm for Realization of Discrete Fourier TransformIJERA Editor
In this paper, a new radix-3 algorithm for realization of discrete Fourier transform (DFT) of length N = 3m (m =
1, 2, 3,...) is presented. The DFT of length N can be realized from three DFT sequences, each of length N/3. If
the input signal has length N, direct calculation of DFT requires O (N
2
) complex multiplications (4N
2
real
multiplications) and some additions. This radix-3 algorithm reduces the number of multiplications required for
realizing DFT. For example, the number of complex multiplications required for realizing 9-point DFT using the
proposed radix-3 algorithm is 60. Thus, saving in time can be achieved in the realization of proposed algorithm.
MODELING OF REDISTRIBUTION OF INFUSED DOPANT IN A MULTILAYER STRUCTURE DOPANT...mathsjournal
In this paper we used an analytical approach to model nonlinear diffusion of dopant in a multilayer structure with account nonstationary annealing of the dopant. The approach do without crosslinking solutions at
the interface between layers of the multilayer structure. In this paper we analyzed influence of pressure of
vapor of infusing dopant during doping of multilayer structure on values of optimal parameters of technological process to manufacture p-n-junctions. It has been shown, that doping of multilayer structures by
diffusion and optimization of annealing of dopant gives us possibility to increase sharpness of p-n-junctions
(single p-n-junctions and p-n-junctions within transistors) and to increase homogeneity of dopant distribution in doped area.
In an earlier paper in 2017, Rastogi and Bajpai[1] defined and studied a special vector field of the first kind in a Finsler space as follows:
Definition 1: A vector field Xi(x), in a Finsler space, is said to be a special vector field of the first kind, if (i) Xi/j = - δij and (ii) Xi hij = Ɵj, where Ɵj is a non-zero vector field in the given Finsler space.
In 2019, some more special vector fields in a Finsler space of two and three dimensions have been defined and studied by the authors Dwivedi et al.[2] and Dwivedi et al.[3] In Dwivedi et al.[3], the authors defined and studied six kinds of special vector fields in a Finsler space of three dimensions and, respectively, called them special vector fields of the second, third, fourth, fifth, sixth, and seventh kind. In the present paper, we shall study some curvature properties of special vector fields of the first and seventh kind in a Finsler space of three dimensions.
On optimization ofON OPTIMIZATION OF DOPING OF A HETEROSTRUCTURE DURING MANUF...ijcsitcejournal
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δ-
doped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After
the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize
annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more
compact p-i-n-heterodiodes
On Approach to Increase Integration rate of Elements of a Circuit Driver with...BRNSS Publication Hub
In this paper, we introduce an approach to increase the integration rate of elements of a driver with 2-tap de-emphasis and impendence matching. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
A Convergence Theorem Associated With a Pair of Second Order Differential Equ...IOSR Journals
We consider the second order matrix differential equation
M 0, 0 x Where M is a second-order matrix differential operator and is a vector having two components. In this
paper we prove a convergence theorem for the vector function 1 2 ( ) ( ) ( ) f x f x f x which is continuous in
0 x and of bounded variation in 0 x , when p(x) and q(x) tend to as x tend to .
Modeling of manufacturing of a field effect transistor to determine condition...ijcsa
In this paper we introduce an approach to model technological process of manufacture of a field-effect
heterotransistor. The modeling gives us possibility to optimize the technological process to decrease length
of channel by using mechanical stress. As accompanying results of the decreasing one can find decreasing
of thickness of the heterotransistors and increasing of their density, which were comprised in integrated
circuits.
Using Porosity of Epitaxial Layer to Decrease Quantity of Radiation Defects G...msejjournal
In this paper we consider redistribution of radiation defects, which were generated during radiation processing, in a multilayer structure with porous epitaxial layer. It has been shown, that porosity of epitaxial layer gives a possibility to decrease quantity of radiation defects.
Certain D - Operator for Srivastava H B - Hypergeometric Functions of Three V...inventionjournals
The aim of this paper is to derive certain relations involving Srivastava’s hypergeometric functions H B in three variables. Many operator identities involving these pairs of symbolic operators are first constructed for this purpose. By means of these operator identities, which express the aforementioned H B - hypergeometric functions in terms of such simpler functions as the products of the Gauss and Appell hypergeometric functions. Other closely-related results are also considered briefly. Also, we have derived certain new integral representations for the H B - hypergeometric functions of three variables defined earlier by Lauricella [ 8 ] and Srivastava [14 ] .
ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS ...ijoejournal
We introduce an approach for increasing density of voltage restore elements. The approach based on
manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special configuration.
Several required sections of the layer should be doped by diffusion or ion implantation. After
that dopants and/or radiation defects should be annealed.
ON OPTIMIZATION OF MANUFACTURING PLANAR DOUBLE-BASE HETEROTRANSISTORS TO DECR...ijaceeejournal
In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a heterostructure with specific configuration.
Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation.
After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider
an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base
heterotransistors.
On Approach to Increase Integration Rate of Elements of a Current Source CircuitBRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a current source circuit.
Framework the approach, we consider a heterostructure with special configuration. Several specific
areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/
or radiation defects should be optimized.
On prognozisys of manufacturing double basemsejjournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this heterostructure
by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects. The
approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher compactness
of the considered bipolar transistor.
On Some Double Integrals of H -Function of Two Variables and Their ApplicationsIJERA Editor
This paper deals with the evaluation of four integrals of H -function of two variables proposed by Singh and
Mandia [7] and their applications in deriving double half-range Fourier series for the H -function of two
variables. A multiple integral and a multiple half-range Fourier series of the H -function of two variables are
derived analogous to the double integral and double half-range Fourier series of the H -function of two
variables.
On Some Integrals of Products of H -FunctionsIJMER
The object of the present paper is to evaluate an integral involving products of three H -function of different arguments which not only provides us the Laplace transform, Hankel transform ([8],p.3), Meijer’s Bessel transform ([8],p.121) and various other integral transforms of the product of two H -functions but also generalizes the result given earlier by many writers notably by Bailey ([3],
p.38), Meijer ([8],p.422) and Slater ([20], p.54(3.7.2).
Effect of orientation angle of elliptical hole in thermoplastic composite pla...ijceronline
International Journal of Computational Engineering Research (IJCER) is dedicated to protecting personal information and will make every reasonable effort to handle collected information appropriately. All information collected, as well as related requests, will be handled as carefully and efficiently as possible in accordance with IJCER standards for integrity and objectivity.
Main aim of this article is the discussion of Univalent complex functions, Cap like complex functions, and star like complex functions, close-to-cap like complex functions.
On Approach to Increase Integration rate of Elements of a Circuit Driver with...BRNSS Publication Hub
In this paper, we introduce an approach to increase the integration rate of elements of a driver with 2-tap de-emphasis and impendence matching. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
A Convergence Theorem Associated With a Pair of Second Order Differential Equ...IOSR Journals
We consider the second order matrix differential equation
M 0, 0 x Where M is a second-order matrix differential operator and is a vector having two components. In this
paper we prove a convergence theorem for the vector function 1 2 ( ) ( ) ( ) f x f x f x which is continuous in
0 x and of bounded variation in 0 x , when p(x) and q(x) tend to as x tend to .
Modeling of manufacturing of a field effect transistor to determine condition...ijcsa
In this paper we introduce an approach to model technological process of manufacture of a field-effect
heterotransistor. The modeling gives us possibility to optimize the technological process to decrease length
of channel by using mechanical stress. As accompanying results of the decreasing one can find decreasing
of thickness of the heterotransistors and increasing of their density, which were comprised in integrated
circuits.
Using Porosity of Epitaxial Layer to Decrease Quantity of Radiation Defects G...msejjournal
In this paper we consider redistribution of radiation defects, which were generated during radiation processing, in a multilayer structure with porous epitaxial layer. It has been shown, that porosity of epitaxial layer gives a possibility to decrease quantity of radiation defects.
Certain D - Operator for Srivastava H B - Hypergeometric Functions of Three V...inventionjournals
The aim of this paper is to derive certain relations involving Srivastava’s hypergeometric functions H B in three variables. Many operator identities involving these pairs of symbolic operators are first constructed for this purpose. By means of these operator identities, which express the aforementioned H B - hypergeometric functions in terms of such simpler functions as the products of the Gauss and Appell hypergeometric functions. Other closely-related results are also considered briefly. Also, we have derived certain new integral representations for the H B - hypergeometric functions of three variables defined earlier by Lauricella [ 8 ] and Srivastava [14 ] .
ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS ...ijoejournal
We introduce an approach for increasing density of voltage restore elements. The approach based on
manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special configuration.
Several required sections of the layer should be doped by diffusion or ion implantation. After
that dopants and/or radiation defects should be annealed.
ON OPTIMIZATION OF MANUFACTURING PLANAR DOUBLE-BASE HETEROTRANSISTORS TO DECR...ijaceeejournal
In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a heterostructure with specific configuration.
Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation.
After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider
an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base
heterotransistors.
On Approach to Increase Integration Rate of Elements of a Current Source CircuitBRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a current source circuit.
Framework the approach, we consider a heterostructure with special configuration. Several specific
areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/
or radiation defects should be optimized.
On prognozisys of manufacturing double basemsejjournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this heterostructure
by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects. The
approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher compactness
of the considered bipolar transistor.
On Some Double Integrals of H -Function of Two Variables and Their ApplicationsIJERA Editor
This paper deals with the evaluation of four integrals of H -function of two variables proposed by Singh and
Mandia [7] and their applications in deriving double half-range Fourier series for the H -function of two
variables. A multiple integral and a multiple half-range Fourier series of the H -function of two variables are
derived analogous to the double integral and double half-range Fourier series of the H -function of two
variables.
On Some Integrals of Products of H -FunctionsIJMER
The object of the present paper is to evaluate an integral involving products of three H -function of different arguments which not only provides us the Laplace transform, Hankel transform ([8],p.3), Meijer’s Bessel transform ([8],p.121) and various other integral transforms of the product of two H -functions but also generalizes the result given earlier by many writers notably by Bailey ([3],
p.38), Meijer ([8],p.422) and Slater ([20], p.54(3.7.2).
Effect of orientation angle of elliptical hole in thermoplastic composite pla...ijceronline
International Journal of Computational Engineering Research (IJCER) is dedicated to protecting personal information and will make every reasonable effort to handle collected information appropriately. All information collected, as well as related requests, will be handled as carefully and efficiently as possible in accordance with IJCER standards for integrity and objectivity.
Main aim of this article is the discussion of Univalent complex functions, Cap like complex functions, and star like complex functions, close-to-cap like complex functions.
The stochastic system is very importment in many aspacts. Wiener processes is a sort of importment
stochastic processes. Wiener square processes is a class of useful stochastic processes in practies,its study is very
value.In this paper,we study Wiener square processes using haar wavelet and wavelet transform.we study its some
properties and wavelet expansion. Index Wiener Integral processes is a class of useful stochastic processes in
practies,its study is very value.In this paper,we study it using haar wavelet and wavelet transform on [0,t].we study
its some properties and wavelet expansion
Some Continued Mock Theta Functions from Ramanujan’s Lost Notebook (IV)paperpublications3
Abstract: Ramanujan’s lost notebook contains many results on mock theta functions. In particular, the lost notebook contains eight identities for tenth order mock theta functions. Previously many authors proved the first six of Ramanujan’s tenth order mock theta function identities. It is the purpose of this paper to prove the seventh and eighth identities of Ramanujan’s tenth order mock theta function identities which are expressed by mock theta functions and also a definite integral. The properties of modular forms are used for the proofs of theta function identities and L. J. Mordell’s transformation formula for the definite integral.Keywords: Mock Theta Functions from Ramanujan’s Lost Notebook.
Title: Some Continued Mock Theta Functions from Ramanujan’s Lost Notebook (IV)
Author: MOHAMMADI BEGUM JEELANI SHAIKH
ISSN 2350-1022
International Journal of Recent Research in Mathematics Computer Science and Information Technology
Paper Publications
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
International Journal of Engineering Research and Development (IJERD)IJERD Editor
journal publishing, how to publish research paper, Call For research paper, international journal, publishing a paper, IJERD, journal of science and technology, how to get a research paper published, publishing a paper, publishing of journal, publishing of research paper, reserach and review articles, IJERD Journal, How to publish your research paper, publish research paper, open access engineering journal, Engineering journal, Mathemetics journal, Physics journal, Chemistry journal, Computer Engineering, Computer Science journal, how to submit your paper, peer reviw journal, indexed journal, reserach and review articles, engineering journal, www.ijerd.com, research journals,
yahoo journals, bing journals, International Journal of Engineering Research and Development, google journals, hard copy of journal
In this paper based on recently introduced approach we formulated some recommendations to optimize
manufacture drift bipolar transistor to decrease their dimensions and to decrease local overheats during
functioning. The approach based on manufacture a heterostructure, doping required parts of the heterostructure
by dopant diffusion or by ion implantation and optimization of annealing of dopant and/or radiation
defects. The optimization gives us possibility to increase homogeneity of distributions of concentrations
of dopants in emitter and collector and specific inhomogenous of concentration of dopant in base and at the
same time to increase sharpness of p-n-junctions, which have been manufactured framework the transistor.
We obtain dependences of optimal annealing time on several parameters. We also introduced an analytical
approach to model nonlinear physical processes (such as mass- and heat transport) in inhomogenous media
with time-varying parameters.
On Decreasing of Dimensions of Field-Effect Heterotransistors in Logical CMOP...BRNSS Publication Hub
In this paper, we introduce an approach to decrease the dimensions of CMOP voltage differencing inverting buffered amplifier based on field-effect heterotransistors by increasing density of elements. Dimensions of the elements will be decreased due to manufacture heterostructure with a specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects.
Positive and negative solutions of a boundary value problem for a fractional ...journal ijrtem
: In this work, we study a boundary value problem for a fractional
q, -difference equation. By
using the monotone iterative technique and lower-upper solution method, we get the existence of positive or
negative solutions under the nonlinear term is local continuity and local monotonicity. The results show that we
can construct two iterative sequences for approximating the solutions
Similar to IRJET- On Certain Subclasses of Univalent Functions: An Application (20)
Industrial Training at Shahjalal Fertilizer Company Limited (SFCL)MdTanvirMahtab2
This presentation is about the working procedure of Shahjalal Fertilizer Company Limited (SFCL). A Govt. owned Company of Bangladesh Chemical Industries Corporation under Ministry of Industries.
Overview of the fundamental roles in Hydropower generation and the components involved in wider Electrical Engineering.
This paper presents the design and construction of hydroelectric dams from the hydrologist’s survey of the valley before construction, all aspects and involved disciplines, fluid dynamics, structural engineering, generation and mains frequency regulation to the very transmission of power through the network in the United Kingdom.
Author: Robbie Edward Sayers
Collaborators and co editors: Charlie Sims and Connor Healey.
(C) 2024 Robbie E. Sayers
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
Saudi Arabia stands as a titan in the global energy landscape, renowned for its abundant oil and gas resources. It's the largest exporter of petroleum and holds some of the world's most significant reserves. Let's delve into the top 10 oil and gas projects shaping Saudi Arabia's energy future in 2024.
CFD Simulation of By-pass Flow in a HRSG module by R&R Consult.pptxR&R Consult
CFD analysis is incredibly effective at solving mysteries and improving the performance of complex systems!
Here's a great example: At a large natural gas-fired power plant, where they use waste heat to generate steam and energy, they were puzzled that their boiler wasn't producing as much steam as expected.
R&R and Tetra Engineering Group Inc. were asked to solve the issue with reduced steam production.
An inspection had shown that a significant amount of hot flue gas was bypassing the boiler tubes, where the heat was supposed to be transferred.
R&R Consult conducted a CFD analysis, which revealed that 6.3% of the flue gas was bypassing the boiler tubes without transferring heat. The analysis also showed that the flue gas was instead being directed along the sides of the boiler and between the modules that were supposed to capture the heat. This was the cause of the reduced performance.
Based on our results, Tetra Engineering installed covering plates to reduce the bypass flow. This improved the boiler's performance and increased electricity production.
It is always satisfying when we can help solve complex challenges like this. Do your systems also need a check-up or optimization? Give us a call!
Work done in cooperation with James Malloy and David Moelling from Tetra Engineering.
More examples of our work https://www.r-r-consult.dk/en/cases-en/
Cosmetic shop management system project report.pdfKamal Acharya
Buying new cosmetic products is difficult. It can even be scary for those who have sensitive skin and are prone to skin trouble. The information needed to alleviate this problem is on the back of each product, but it's thought to interpret those ingredient lists unless you have a background in chemistry.
Instead of buying and hoping for the best, we can use data science to help us predict which products may be good fits for us. It includes various function programs to do the above mentioned tasks.
Data file handling has been effectively used in the program.
The automated cosmetic shop management system should deal with the automation of general workflow and administration process of the shop. The main processes of the system focus on customer's request where the system is able to search the most appropriate products and deliver it to the customers. It should help the employees to quickly identify the list of cosmetic product that have reached the minimum quantity and also keep a track of expired date for each cosmetic product. It should help the employees to find the rack number in which the product is placed.It is also Faster and more efficient way.
About
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.
Technical Specifications
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
Key Features
Indigenized remote control interface card suitable for MAFI system CCR equipment. Compatible for IDM8000 CCR. Backplane mounted serial and TCP/Ethernet communication module for CCR remote access. IDM 8000 CCR remote control on serial and TCP protocol.
• Remote control: Parallel or serial interface
• Compatible with MAFI CCR system
• Copatiable with IDM8000 CCR
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
Application
• Remote control: Parallel or serial interface.
• Compatible with MAFI CCR system.
• Compatible with IDM8000 CCR.
• Compatible with Backplane mount serial communication.
• Compatible with commercial and Defence aviation CCR system.
• Remote control system for accessing CCR and allied system over serial or TCP.
• Indigenized local Support/presence in India.
• Easy in configuration using DIP switches.