We introduce an approach for increasing density of voltage restore elements. The approach based on
manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special configuration.
Several required sections of the layer should be doped by diffusion or ion implantation. After
that dopants and/or radiation defects should be annealed.
ON OPTIMIZATION OF MANUFACTURING PLANAR DOUBLE-BASE HETEROTRANSISTORS TO DECR...ijaceeejournal
In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a heterostructure with specific configuration.
Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation.
After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider
an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base
heterotransistors.
An Approach to Analyze Non-linear Dynamics of Mass Transport during Manufactu...BRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a hybrid comparator with the first dynamic amplifying stage and the second quasi-dynamic latching stage. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect heterotransistor. Based on analytical solution of the considered boundary problems some recommendations have been formulated to optimize technological processes.
On Approach to Increase Integration Rate of Elements of an Operational Amplif...BRNSS Publication Hub
In this paper, we introduce an approach to optimize manufacturing of an operational amplifier circuit based on field-effect transistors. Main aims of the optimization are (i) decreasing dimensions of elements of the considered operational amplifier and (ii) increasing of performance and reliability of the considered field-effect transistors. Dimensions of considered field-effect transistors will be decreased due to manufacture of these transistors framework heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects. Performance and reliability of the above field-effect transistors could be increased by optimization of annealing of dopant and/or radiation defects and using inhomogeneity of properties of heterostructure. Choosing of inhomogeneity of properties of heterostructure leads to increasing of compactness of distribution of concentration of dopant. At the same time, one can obtain increasing of homogeneity of the above concentration. In this paper, we also introduce an analytical approach for prognosis of technological process of manufacturing of the considered operational amplifier. The approach gives a possibility to take into account variation of parameters of processes in space and at the same time in space. At the same time, one can take into account nonlinearity of the considered processes.
INFLUENCE OF OVERLAYERS ON DEPTH OF IMPLANTED-HETEROJUNCTION RECTIFIERSZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
In this paper we introduce an approach to increase vertical integration of elements of transistor-transistor logic with function AND-NOT. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
On Approach to Increase Integration Rate of Elements of a Current Source CircuitBRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a current source circuit.
Framework the approach, we consider a heterostructure with special configuration. Several specific
areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/
or radiation defects should be optimized.
ON OPTIMIZATION OF MANUFACTURING OF ELEMENTS OF AN BINARY-ROM CIRCUIT TO INCR...JaresJournal
In this paper we introduce an approach to increase integration rate of elements of an binary-ROM circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON OPTIMIZATION OF MANUFACTURING PLANAR DOUBLE-BASE HETEROTRANSISTORS TO DECR...ijaceeejournal
In this paper we consider an approach of manufacturing of double-base hetero transistors to decrease their
dimensions. Framework the approach it should be manufactured a heterostructure with specific configuration.
Farther it is necessary to dope certain areas of the hetero structure by diffusion or by ion implantation.
After finishing of the doping process the dopant and/or radiation defects should be annealed. We consider
an approach of optimization of dopant and/or radiation defects for manufacturing more compact double base
heterotransistors.
An Approach to Analyze Non-linear Dynamics of Mass Transport during Manufactu...BRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a hybrid comparator with the first dynamic amplifying stage and the second quasi-dynamic latching stage. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect heterotransistor. Based on analytical solution of the considered boundary problems some recommendations have been formulated to optimize technological processes.
On Approach to Increase Integration Rate of Elements of an Operational Amplif...BRNSS Publication Hub
In this paper, we introduce an approach to optimize manufacturing of an operational amplifier circuit based on field-effect transistors. Main aims of the optimization are (i) decreasing dimensions of elements of the considered operational amplifier and (ii) increasing of performance and reliability of the considered field-effect transistors. Dimensions of considered field-effect transistors will be decreased due to manufacture of these transistors framework heterostructure with specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects. Performance and reliability of the above field-effect transistors could be increased by optimization of annealing of dopant and/or radiation defects and using inhomogeneity of properties of heterostructure. Choosing of inhomogeneity of properties of heterostructure leads to increasing of compactness of distribution of concentration of dopant. At the same time, one can obtain increasing of homogeneity of the above concentration. In this paper, we also introduce an analytical approach for prognosis of technological process of manufacturing of the considered operational amplifier. The approach gives a possibility to take into account variation of parameters of processes in space and at the same time in space. At the same time, one can take into account nonlinearity of the considered processes.
INFLUENCE OF OVERLAYERS ON DEPTH OF IMPLANTED-HETEROJUNCTION RECTIFIERSZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
In this paper we introduce an approach to increase vertical integration of elements of transistor-transistor logic with function AND-NOT. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
On Approach to Increase Integration Rate of Elements of a Current Source CircuitBRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a current source circuit.
Framework the approach, we consider a heterostructure with special configuration. Several specific
areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/
or radiation defects should be optimized.
ON OPTIMIZATION OF MANUFACTURING OF ELEMENTS OF AN BINARY-ROM CIRCUIT TO INCR...JaresJournal
In this paper we introduce an approach to increase integration rate of elements of an binary-ROM circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
On Approach to Increase Integration Rate of Elements of a Switched-capacitor ...BRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a switched-
capacitor step-down DC–DC converter. Framework the approach, we consider a heterostructure with
special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion
implantation. Annealing of dopant and/or radiation defects should be optimized.
On Approach to Increase Integration rate of Elements of a Circuit Driver with...BRNSS Publication Hub
In this paper, we introduce an approach to increase the integration rate of elements of a driver with 2-tap de-emphasis and impendence matching. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
On optimization ofON OPTIMIZATION OF DOPING OF A HETEROSTRUCTURE DURING MANUF...ijcsitcejournal
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δ-
doped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After
the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize
annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more
compact p-i-n-heterodiodes
OPTIMIZATION OF MANUFACTURE OF FIELDEFFECT HETEROTRANSISTORS WITHOUT P-NJUNCT...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-
junction. Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
ON INCREASING OF DENSITY OF ELEMENTS IN A MULTIVIBRATOR ON BIPOLAR TRANSISTORSijcsitcejournal
In this paper we consider an approach to increase density of elements of a multivibrator on bipolar transistors.
The considered approach based on manufacturing a heterostructure with necessity configuration,
doping by diffusion or ion implantation of required areas to manufacture the required type of conductivity
(p or n) in the areas and optimization of annealing of dopant and/or radiation defects to manufacture more
compact distributions of concentrations of dopants. We also introduce an analytical approach to prognosis
technological process.
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETERO TRANSISTORS A THREE S...jedt_journal
In this paper we introduce an approach to increase density of field-effect hetero transistors framework a three-stage
amplifier circuit. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific structure, doping of required areas of the hetero structure by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.
ON OPTIMIZATION OF MANUFACTURING OF AN AMPLIFIER TO INCREASE DENSITY OF BIPOL...ijoejournal
In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier
due to decreasing of their dimensions. The considered approach based on doping of required areas of
heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized
annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution
of radiation defects (after implantation of ions of dopant) for optimization of the above annealing
have been done by using recently introduced analytical approach. The approach gives a possibility
to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces
between layers of the heterostructure with account nonlinearity of these transports and variation in time of
their parameters.
Optimization of technological process to decrease dimensions of circuits xor ...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant
and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETEROTRANSISTORS FRAMEWORK ...ijoejournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
On prognozisys of manufacturing doublebaseijaceeejournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this
heterostructure by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects.
The approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher
compactness of the considered bipolar transistor.
ON APPROACH TO INCREASE INTEGRATION RATE OF ELEMENTS OF AN COMPARATOR CIRCUITjedt_journal
In this paper we introduce an approach to increase integration rate of elements of an comparator circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON APPROACH TO DECREASE DIMENSIONS OF FIELD-EFFECT TRANSISTORS FRAMEWORK ELEM...ijfcstjournal
In this paper we consider manufacturing of elements SRAM with increased density of field-effect transistors
consisting these elements. The approach based on manufacturing of the elements in heterostructure with
specific configuration. We consider doping of several required areas of the heterostructure by diffusion or
by ion implantation. After that dopant and radiation defects have been annealed framework optimized
scheme.
On Decreasing of Dimensions of Field-Effect Heterotransistors in Logical CMOP...BRNSS Publication Hub
In this paper, we introduce an approach to decrease the dimensions of CMOP voltage differencing inverting buffered amplifier based on field-effect heterotransistors by increasing density of elements. Dimensions of the elements will be decreased due to manufacture heterostructure with a specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects.
AN APPROACH TO OPTIMIZE MANUFACTURE OF AN ACTIVE QUADRATURE SIGNAL GENERATOR ...antjjournal
In this paper we introduce an approach to increase density of field-effect transistors framework an active
quadrature signal generator. Framework the approach we consider manufacturing the generator in heterostructure
with specific configuration. Several required areas of the heterostructure should be doped by diffusion
or ion implantation. After that dopant and radiation defects should by annealed framework optimized
scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered
heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures
during manufacturing of integrated circuits with account mismatch-induced stress.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach
based on manufacturing field-effect transistors in heterostructures and optimization of technological
processes. At the same time we consider possibility to simplify their constructions.
Influence of Overlayers on Depth of Implanted-Heterojunction RectifiersZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
INFLUENCE OF OVERLAYERS ON DEPTH OF IMPLANTED-HETEROJUNCTION RECTIFIERSZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
On Approach to Increase Integration Rate of Elements of a Switched-capacitor ...BRNSS Publication Hub
In this paper, we introduce an approach to increase integration rate of elements of a switched-
capacitor step-down DC–DC converter. Framework the approach, we consider a heterostructure with
special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion
implantation. Annealing of dopant and/or radiation defects should be optimized.
On Approach to Increase Integration rate of Elements of a Circuit Driver with...BRNSS Publication Hub
In this paper, we introduce an approach to increase the integration rate of elements of a driver with 2-tap de-emphasis and impendence matching. Framework the approach, we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
On optimization ofON OPTIMIZATION OF DOPING OF A HETEROSTRUCTURE DURING MANUF...ijcsitcejournal
We introduce an approach of manufacturing of a p-i-n-heterodiodes. The approach based on using a δ-
doped heterostructure, doping by diffusion or ion implantation of several areas of the heterostructure. After
the doping the dopant and/or radiation defects have been annealed. We introduce an approach to optimize
annealing of the dopant and/or radiation defects. We determine several conditions to manufacture more
compact p-i-n-heterodiodes
OPTIMIZATION OF MANUFACTURE OF FIELDEFFECT HETEROTRANSISTORS WITHOUT P-NJUNCT...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors
in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions,
which include into their system). In this situation one can also obtain increasing of homogeneity
of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-
junction. Optimization of technological process with using inhomogeneity of heterostructure give us
possibility to manufacture the transistors as more compact.
ON INCREASING OF DENSITY OF ELEMENTS IN A MULTIVIBRATOR ON BIPOLAR TRANSISTORSijcsitcejournal
In this paper we consider an approach to increase density of elements of a multivibrator on bipolar transistors.
The considered approach based on manufacturing a heterostructure with necessity configuration,
doping by diffusion or ion implantation of required areas to manufacture the required type of conductivity
(p or n) in the areas and optimization of annealing of dopant and/or radiation defects to manufacture more
compact distributions of concentrations of dopants. We also introduce an analytical approach to prognosis
technological process.
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETERO TRANSISTORS A THREE S...jedt_journal
In this paper we introduce an approach to increase density of field-effect hetero transistors framework a three-stage
amplifier circuit. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements will be decreased due to manufacture heterostructure with specific structure, doping of required areas of the hetero structure by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects.
ON OPTIMIZATION OF MANUFACTURING OF AN AMPLIFIER TO INCREASE DENSITY OF BIPOL...ijoejournal
In this paper we consider a possibility to increase density of bipolar heterotransistor framework an amplifier
due to decreasing of their dimensions. The considered approach based on doping of required areas of
heterostructure with specific configuration by diffusion or ion implantation. The doping finished by optimized
annealing of dopant and/or radiation defects. Analysis of redistribution of dopant with account redistribution
of radiation defects (after implantation of ions of dopant) for optimization of the above annealing
have been done by using recently introduced analytical approach. The approach gives a possibility
to analyze mass and heat transports in a heterostructure without crosslinking of solutions on interfaces
between layers of the heterostructure with account nonlinearity of these transports and variation in time of
their parameters.
Optimization of technological process to decrease dimensions of circuits xor ...ijfcstjournal
The paper describes an approach of increasing of integration rate of elements of integrated circuits. The
approach has been illustrated by example of manufacturing of a circuit XOR. Framework the approach one
should manufacture a heterostructure with specific configuration. After that several special areas of the
heterostructure should be doped by diffusion and/or ion implantation and optimization of annealing of dopant
and/or radiation defects. We analyzed redistribution of dopant with account redistribution of radiation
defects to formulate recommendations to decrease dimensions of integrated circuits by using analytical
approaches of modeling of technological process.
ON OPTIMIZATION OF MANUFACTURING OF FIELD-EFFECT HETEROTRANSISTORS FRAMEWORK ...ijoejournal
In this paper we introduce an approach to increase density of field-effect transistors framework a voltage reference. Framework the approach we consider manufacturing the inverter in heterostructure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed framework optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.
On prognozisys of manufacturing doublebaseijaceeejournal
In this paper we introduce a modification of recently introduced analytical approach to model mass- and
heat transport. The approach gives us possibility to model the transport in multilayer structures with account
nonlinearity of the process and time-varing coefficients and without matching the solutions at the
interfaces of the multilayer structures. As an example of using of the approach we consider technological
process to manufacture more compact double base heterobipolar transistor. The technological approach
based on manufacturing a heterostructure with required configuration, doping of required areas of this
heterostructure by diffusion or ion implantation and optimal annealing of dopant and/or radiation defects.
The approach gives us possibility to manufacture p-n- junctions with higher sharpness framework the transistor.
In this situation we have a possibility to obtain smaller switching time of p-n- junctions and higher
compactness of the considered bipolar transistor.
ON APPROACH TO INCREASE INTEGRATION RATE OF ELEMENTS OF AN COMPARATOR CIRCUITjedt_journal
In this paper we introduce an approach to increase integration rate of elements of an comparator circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
ON APPROACH TO DECREASE DIMENSIONS OF FIELD-EFFECT TRANSISTORS FRAMEWORK ELEM...ijfcstjournal
In this paper we consider manufacturing of elements SRAM with increased density of field-effect transistors
consisting these elements. The approach based on manufacturing of the elements in heterostructure with
specific configuration. We consider doping of several required areas of the heterostructure by diffusion or
by ion implantation. After that dopant and radiation defects have been annealed framework optimized
scheme.
On Decreasing of Dimensions of Field-Effect Heterotransistors in Logical CMOP...BRNSS Publication Hub
In this paper, we introduce an approach to decrease the dimensions of CMOP voltage differencing inverting buffered amplifier based on field-effect heterotransistors by increasing density of elements. Dimensions of the elements will be decreased due to manufacture heterostructure with a specific structure, doping of required areas of the heterostructure by diffusion or ion implantation, and optimization of annealing of dopant and/or radiation defects.
AN APPROACH TO OPTIMIZE MANUFACTURE OF AN ACTIVE QUADRATURE SIGNAL GENERATOR ...antjjournal
In this paper we introduce an approach to increase density of field-effect transistors framework an active
quadrature signal generator. Framework the approach we consider manufacturing the generator in heterostructure
with specific configuration. Several required areas of the heterostructure should be doped by diffusion
or ion implantation. After that dopant and radiation defects should by annealed framework optimized
scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered
heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures
during manufacturing of integrated circuits with account mismatch-induced stress.
OPTIMIZATION OF DOPANT DIFFUSION AND ION IMPLANTATION TO INCREASE INTEGRATION...ijrap
In this work we introduce an approach to decrease dimensions of a field-effect heterotransistors. The approach
based on manufacturing field-effect transistors in heterostructures and optimization of technological
processes. At the same time we consider possibility to simplify their constructions.
Influence of Overlayers on Depth of Implanted-Heterojunction RectifiersZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
INFLUENCE OF OVERLAYERS ON DEPTH OF IMPLANTED-HETEROJUNCTION RECTIFIERSZac Darcy
In this paper we compare distributions of concentrations of dopants in an implanted-junction rectifiers in a
heterostructures with an overlayer and without the overlayer. Conditions for decreasing of depth of the
considered p-n-junction have been formulated.
An Approach to Optimize Regimes of Manufacturing of Complementary Horizontal ...ijrap
In this paper we consider nonlinear model to describe manufacturing complementary horizontal field-effect
heterotransistor. Based on analytical solution of the considered boundary problems some recommendations
have been formulated to optimize technological processes.
ON OPTIMIZATION OF MANUFACTURING OF MULTICHANNEL HETEROTRANSISTORS TO INCREAS...ijrap
In this paper we consider an approach to increase integration rate of field-effect heterotransistors. Framework
the approach we consider a heterostructure with specific configuration. After manufacturing the
heterostructure we consider doping of required areas of the heterostructure by diffusion or ion implantation.
The doping finished by optimized annealing of dopant and/or radiation defects. Framework this paper
we consider a possibility to manufacture with several channels. Manufacturing multi-channel transistors
gives us a possibility the to increase integration rate of transistors and to increase electrical current
through the transistor.
MODIFICATION OF DOPANT CONCENTRATION PROFILE IN A FIELD-EFFECT HETEROTRANSIST...msejjournal
In this paper we consider an approach of manufacturing more compact field-effect heterotransistors. The
approach based on manufacturing a heterostructure, which consist of a substrate and an epitaxial layer
with specific configuration. After that several areas of the epitaxial layer have been doped by diffusion or
ion implantation with optimized annealing of dopant and /or radiation defects. At the same time we introduce
an approach of modification of energy band diagram by additional doping of channel of the transistors.
We also consider an analytical approach to model and optimize technological process.
MODIFICATION OF DOPANT CONCENTRATION PROFILE IN A FIELD-EFFECT HETEROTRANSIST...msejjournal
In this paper we consider an approach of manufacturing more compact field-effect heterotransistors. The
approach based on manufacturing a heterostructure, which consist of a substrate and an epitaxial layer
with specific configuration. After that several areas of the epitaxial layer have been doped by diffusion or
ion implantation with optimized annealing of dopant and /or radiation defects. At the same time we introduce an approach of modification of energy band diagram by additional doping of channel of the transistors. We also consider an analytical approach to model and optimize technological process.
ON VERTICAL INTEGRATION FRAMEWORK ELEMENT OF TRANSISTOR-TRANSISTOR LOGICijaceeejournal
In this paper we introduce an approach to increase vertical integration of elements of transistor-transistor
logic with function AND-NOT. Framework the approach we consider a heterostructure with special configuration.
Several specific areas of the heterostructure should be doped by diffusion or ion implantation.
Annealing of dopant and/or radiation defects should be optimized.
ON APPROACH OF OPTIMIZATION OF FORMATION OF INHOMOGENOUS DISTRIBUTIONS OF DOP...ijcsa
We introduce an approach of manufacturing of a field-effect heterotransistor with inhomogenous doping of channel. The inhomogenous distribution of concentration of dopant gives a possibility to change speed of transport of charge carriers and to decrease length of channel.
On Optimization of Manufacturing of Field-Effect Heterotransistors Frame-work...antjjournal
We consider an approach for increasing density of field-effect heterotransistors in a single-stage multi-path operational amplifier. At the same time one can obtain decreasing of dimensions of the above transistors. Dimensions of the elements could be decreased by manufacturing of these elements in a heterostructure with specific structure. The manufacturing is doing by doping of required areas of the heterostructure by diffusion or ion implantation with future optimization of annealing of dopant and/or radiation defects.
Optimization of Manufacture of Field-Effect Heterotransistors without P-N-Jun...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or
radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions, which include into their system). In this situation one can also obtain increasing of homogeneity of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction. Optimization of technological process with using inhomogeneity of heterostructure give us possibility to manufacture the transistors as more compact.
Optimization of Manufacture of Field-Effect Heterotransistors without P-N-Jun...ijrap
It has been recently shown, that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation under condition of optimization of dopant and/or radiation defects leads to increasing of sharpness of p-n-junctions (both single p-n-junctions and p-njunctions, which include into their system). In this situation one can also obtain increasing of homogeneity of dopant in doped area. In this paper we consider manufacturing a field-effect heterotransistor without pn-junction. Optimization of technological process with using inhomogeneity of heterostructure give us possibility to manufacture the transistors as more compact.
Similar to ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS OF THE CIRCUIT (20)
Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
In this month's edition, along with this month's industry news to celebrate the 13 years since the group was created we have articles including
A case study of the used of Advanced Process Control at the Wastewater Treatment works at Lleida in Spain
A look back on an article on smart wastewater networks in order to see how the industry has measured up in the interim around the adoption of Digital Transformation in the Water Industry.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
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ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE TO INCREASE DENSITY OF ELEMENTS OF THE CIRCUIT
1. International Journal on Organic Electronics (IJOE) Vol.5, No.1/2/3/4, October 2016
DOI: 10.5121/ijoe.2016.5401 1
ANALYSIS OF MANUFACTURING OF VOLTAGE RESTORE
TO INCREASE DENSITY OF ELEMENTS OF THE CIRCUIT
E.L. Pankratov, E.A. Bulaeva
Nizhny Novgorod State University, 23 Gagarin avenue, Nizhny Novgorod, 603950,
Russia
ABSTRACT
We introduce an approach for increasing density of voltage restore elements. The approach based on
manufacturing of a heterostructure, which consist of a substrate and an epitaxial layer with special con-
figuration. Several required sections of the layer should be doped by diffusion or ion implantation. After
that dopants and/or radiation defects should be annealed.
KEYWORDS
Voltage restore; optimization of manufacturing; increasing of density of elements
1. INTRODUCTION
Now several actual questions of solid state electronics could be formulated. One of them is in-
creasing of density of elements of integrated circuits. The increasing of density leads to necessity
of decreasing of dimensions of these elements. Recently are have been elaborated several ap-
proaches for the above decreasing. One of them is manufacturing of solid state electronic devices
in thin film heterostructures [1-4]. Other approach based on doping of required areas of a semi-
conductor sample or a heterostructure. After the doping one should consider laser or microwave
annealing of dopant and/or radiation defects [5-7]. Due to these types of annealing one can find
inhomogenous distribution of temperature in doped area. In this situation one can find inhomo-
geneity of doped structure and consequently to decreasing of dimensions of the considered ele-
ments. An alternative approach of changing of properties of materials before or during doping is
radiation processing [8,9].
In this paper we consider an approach to manufacture of a voltage restore. We illustrate the ap-
proach by considering a heterostructure. The heterostructure consist of a substrate and an epitax-
ial layer. We consider that several sections take a place framework the epitaxial layer. We con-
sider doping these sections by diffusion or ion implantation. The doping gives a possibility to
obtain p or n type of conductivity during process of manufacture of diodes and bipolar transistors
so as it is shown on Fig. 1. After finishing the doping we consider annealing of dopant and/or
radiation defects. Our main aim is analysis of redistribution of dopant and/or radiation defects
during annealing.
2. METHOD OF SOLUTION
We calculate distribution of concentration of dopant in space and time by solving the following
boundary problem [10-12]
2. International Journal on Organic Electronics (IJOE) Vol.5, No.1/2/3/4, October 2016
2
( ) ( ) ( ) ( )
∂
∂
∂
∂
+
∂
∂
∂
∂
+
∂
∂
∂
∂
=
∂
∂
z
tzyxC
D
zy
tzyxC
D
yx
tzyxC
D
xt
tzyxC ,,,,,,,,,,,,
(1)
( ) 0
,,,
0
=
∂
∂
=x
x
tzyxC
,
( ) 0
,,,
=
∂
∂
= xLx
x
tzyxC
,
( ) 0
,,,
0
=
∂
∂
=y
y
tzyxC
,
( ) 0
,,,
=
∂
∂
= yLx
y
tzyxC
,
( ) 0
,,,
0
=
∂
∂
=z
z
tzyxC
,
( ) 0
,,,
=
∂
∂
= zLx
z
tzyxC
, C(x,y,z,0)=fC (x,y,z).
The function C(x,y,z,t) describes distribution of concentration of dopant in space and time; T
Fig. 1. Structure of voltage restore.
View from top describes the temperature of annealing; DС describes the dopant diffusion coeffi-
cient. Dopant diffusion coefficient is different in different materials of heterostructure. The diffu-
sion coefficient will be also changed with changing of temperature. We approximate dopant dif-
fusion coefficient by the following function based on Refs. [13-15]
.
(3)
Function DL (x,y,z,T) describes spatial and temperature dependences of diffusion coefficient;
function P (x,y,z,T) describes limit of solubility of dopant; parameter γ is differ in different mate-
rials and assume integer values; function V (x,y,z,t) describes distribution of concentration of va-
cancies with equilibrium distribution V*
. One can find detailed concentrational dependence of
dopant diffusion coefficient in Ref. [13]. It should be noted, that using diffusive type of doping
did not leads to radiation damage. In this situation ζ1=ζ2= 0. We determine spatio-temporal dis-
tributions of concentrations of point radiation defects by solution the following system of equa-
tions [14,15]
n
n
p
n
p
( ) ( )
( )
( ) ( )
( )
++
+= 2*
2
2*1
,,,,,,
1
,,,
,,,
1,,,
V
tzyxV
V
tzyxV
TzyxP
tzyxC
TzyxDD LC ςςξ γ
γ
3. International Journal on Organic Electronics (IJOE) Vol.5, No.1/2/3/4, October 2016
3
( ) ( ) ( ) ( ) ( ) ( ) ×−
∂
∂
∂
∂
+
∂
∂
∂
∂
=
∂
∂
Tzyxk
y
tzyxI
TzyxD
yx
tzyxI
TzyxD
xt
tzyxI
IIII ,,,
,,,
,,,
,,,
,,,
,,,
,
( ) ( ) ( ) ( ) ( ) ( )tzyxVtzyxITzyxk
z
tzyxI
TzyxD
z
tzyxI VII ,,,,,,,,,
,,,
,,,,,, ,
2
−
∂
∂
∂
∂
+× (4)
( )
( )
( )
( )
( )
( ) ×−
∂
∂
∂
∂
+
∂
∂
∂
∂
=
∂
∂
Tzyxk
y
tzyxV
TzyxD
yx
tzyxV
TzyxD
xt
tzyxV
VVVV ,,,
,,,
,,,
,,,
,,,
,,,
,
( ) ( ) ( ) ( ) ( ) ( )tzyxVtzyxITzyxk
z
tzyxV
TzyxD
z
tzyxV VIV ,,,,,,,,,
,,,
,,,,,, ,
2
−
∂
∂
∂
∂
+×
with boundary and initial conditions
( ) 0
,,,
0
=
∂
∂
=x
x
tzyxρ
,
( ) 0
,,,
=
∂
∂
= xLx
x
tzyxρ
,
( ) 0
,,,
0
=
∂
∂
=y
y
tzyxρ
,
( ) 0
,,,
=
∂
∂
= yLy
y
tzyxρ
,
( ) 0
,,,
0
=
∂
∂
=z
z
tzyxρ
,
( ) 0
,,,
=
∂
∂
= zLz
z
tzyxρ
, ρ(x,y,z,0)=fρ (x,y,z). (5)
Here ρ =I,V; function I(x,y,z,t) describes distribution of concentration of radiation interstitials in
space and time; functions Dρ(x,y,z,T) describe spatio-temperature dependences of the diffusion
coefficients of point radiation defects; terms V2
(x,y,z,t) and I2
(x,y,z,t) describe generation
divacancies and diinterstitials, respectively; function kI,V(x,y,z,T) describes spatio-temperature
dependence of recombination parameter of point radiation defects; functions kI,I(x,y,z,T) and
kV,V(x,y,z,T) describe spatio-temperature dependence of parameters of generation of simplest
complexes of point radiation defects.
We calculate distributions of concentrations of divacancies ΦV (x,y,z,t) and dinterstitials ΦI
(x,y,z,t) in space and time by solving the following system of equations [14,15]
( ) ( ) ( ) ( ) ( ) +
Φ
+
Φ
=
Φ
ΦΦ
y
tzyx
TzyxD
yx
tzyx
TzyxD
xt
tzyx I
I
I
I
I
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( ) ( )tzyxITzyxktzyxITzyxk
z
tzyx
TzyxD
z
III
I
I ,,,,,,,,,,,,
,,,
,,, 2
, −+
Φ
+ Φ
∂
∂
∂
∂
(6)
( ) ( ) ( ) ( ) ( ) +
Φ
+
Φ
=
Φ
ΦΦ
y
tzyx
TzyxD
yx
tzyx
TzyxD
xt
tzyx V
V
V
V
V
∂
∂
∂
∂
∂
∂
∂
∂
∂
∂ ,,,
,,,
,,,
,,,
,,,
( ) ( ) ( ) ( ) ( ) ( )tzyxVTzyxktzyxVTzyxk
z
tzyx
TzyxD
z
VVV
V
V ,,,,,,,,,,,,
,,,
,,, 2
, −+
Φ
+ Φ
∂
∂
∂
∂
with boundary and initial conditions
( )
0
,,,
0
=
∂
Φ∂
=x
x
tzyxρ
,
( )
0
,,,
=
∂
Φ∂
= xLx
x
tzyxρ
,
( )
0
,,,
0
=
∂
Φ∂
=y
y
tzyxρ
,
( )
0
,,,
=
∂
Φ∂
= yLy
y
tzyxρ
,
4. International Journal on Organic Electronics (IJOE) Vol.5, No.1/2/3/4, October 2016
4
( )
0
,,,
0
=
∂
Φ∂
=z
z
tzyxρ
,
( )
0
,,,
=
∂
Φ∂
= zLz
z
tzyxρ
, ΦI(x,y,z,0)=fΦI (x,y,z), ΦV(x,y,z,0)=fΦV (x,y,z). (7)
Function DΦρ(x,y,z,T) describes spatio-temperature dependences of diffusion coefficients of the
considered complexes of radiation defects; function kI(x,y,z,T) and kV (x,y,z,T) describes spatio-
temperature dependences of parameters of decay of these complexes.
We used recently elaborated approach [16,17] to calculate distributions of concentrations of
point radiation defects in space and time. To use the approach we shall transform spatio-
temperature dependences of diffusion coefficients to the following form: Dρ(x,y,z,T)=D0ρ [1+ερ
gρ(x,y,z,T)]. Here D0ρ are the average values of diffusion coefficients, 0≤ερ<1, |gρ(x,y,z,T)|≤1, ρ
=I,V. We used the same transformation of approximations oof recombination parameters of point
defects and generation parameters of their complexes: kI,V(x,y,z,T)=k0I,V[1+εI,V gI,V(x,y,z,T)],
kI,I(x,y,z,T)=k0I,I[1+ εI,I gI,I(x,y,z,T)] and kV,V (x,y,z,T)= k0V,V [1+εV,V gV,V(x,y,z,T)], where k0ρ1,ρ2 are
the their average values, 0≤εI,V < 1, 0≤εI,I <1, 0≤εV,V<1, | gI,V(x,y,z,T)|≤1, | gI,I(x,y,z,T)|≤1,
|gV,V(x,y,z,T)|≤1. Let us introduce the following dimensionless variables: χ = x/Lx, η = y /Ly,, φ=
z/Lz, ( ) ( ) *
,,,,,,
~
ItzyxItzyxI = , ( ) ( ) *
,,,,,,
~
VtzyxVtzyxV = , VI DDkL 00,0
2
ρρρ =Ω ,
VIVI DDkL 00,0
2
=ω , 2
00 LtDD VI=ϑ . Now we can transform boundary problem Eqs.(4) and
(5) to the following form
( )
( )[ ] ( ) ( )
×
∂
∂
∂
∂
+
∂
∂
+
∂
∂
=
∂
∂
η
ϑφηχ
ηχ
ϑφηχ
φηχε
χϑ
ϑφηχ ,,,
~
,,,
~
,,,1
,,,
~
00
0
00
0 I
DD
DI
Tg
DD
DI
VI
I
II
VI
I
( )[ ]} ( )[ ] ( ) ( ) ×−
∂
∂
+
∂
∂
++× ϑφηχ
φ
ϑφηχ
φηχε
φ
φηχε ,,,
~,,,
~
,,,1,,,1
00
0
I
I
Tg
DD
D
Tg II
VI
I
II
( )[ ] ( ) ( )[ ] ( )ϑφηχφηχεϑφηχφηχεω ,,,
~
,,,1,,,
~
,,,1 2
,,,, ITgVTg IIIIIVIVI +Ω−+× (8)
( ) ( )[ ] ( ) ( )
×
∂
∂
∂
∂
+
∂
∂
+
∂
∂
=
∂
∂
η
ϑφηχ
ηχ
ϑφηχ
φηχε
χϑ
ϑφηχ ,,,
~
,,,
~
,,,1
,,,
~
00
0
00
0 V
DD
DV
Tg
DD
DV
VI
V
VV
VI
V
( )[ ]} ( )[ ] ( ) ( ) ×−
∂
∂
+
∂
∂
++× ϑφηχ
φ
ϑφηχ
φηχε
φ
φηχε ,,,
~,,,
~
,,,1,,,1
00
0
I
V
Tg
DD
D
Tg VV
VI
V
VV
( )[ ] ( ) ( )[ ] ( )ϑφηχφηχεϑφηχφηχεω ,,,
~
,,,1,,,
~
,,,1 2
,,,, VTgVTg VVVVIVIVI +Ω−+×
( ) 0
,,,~
0
=
∂
∂
=χ
χ
ϑφηχρ
,
( ) 0
,,,~
1
=
∂
∂
=χ
χ
ϑφηχρ
,
( ) 0
,,,~
0
=
∂
∂
=η
η
ϑφηχρ
,
( ) 0
,,,~
1
=
∂
∂
=η
η
ϑφηχρ
,
( ) 0
,,,~
0
=
∂
∂
=φ
φ
ϑφηχρ
,
( ) 0
,,,~
1
=
∂
∂
=φ
φ
ϑφηχρ
, ( )
( )
*
,,,
,,,~
ρ
ϑφηχ
ϑφηχρ ρf
= . (9)
5. International Journal on Organic Electronics (IJOE) Vol.5, No.1/2/3/4, October 2016
5
We calculate solutions of boundary problem Eqs.(8) and (9) by using recently introduced ap-
proach [16,17]. In this situation we used the following power series
( ) ( )∑ ∑ ∑Ω=
∞
=
∞
=
∞
=0 0 0
,,,~,,,~
i j k
ijk
kji
ϑφηχρωεϑφηχρ ρρ . (10)
We substitute the series (10) into the boundary problem Eqs.(8) and (9). After that we obtain
equations for initial-order approximations of point defects concentration ( )ϑφηχ ,,,
~
000I and
( )ϑφηχ ,,,
~
000V and corrections for them ( )ϑφηχ ,,,
~
ijkI and ( )ϑφηχ ,,,
~
ijkV , i≥1, j≥1, k≥1. The equa-
tions are presented in the Appendix. We obtain solution of the above equations by the standard
Fourier approach [18,19]. The solutions are presented in the Appendix.
Farther we calculate distributions of concentrations of simplest complexes of point radiation de-
fects in space and time. To determine the distributions we transform approximations of diffusion
coefficients in the following form: DΦρ(x,y,z,T)=D0Φρ[1+εΦρgΦρ(x,y,z,T)]. Here D0Φρ describe av-
erage values of diffusion coefficients. In this situation the Eqs.(6) could be written as
( )
( )[ ] ( ) ( )
×
Φ
+
Φ
+=
Φ
ΦΦΦΦ
y
tzyx
y
D
x
tzyx
Tzyxg
x
D
t
tzyx I
I
I
III
I
∂
∂
∂
∂
∂
∂
ε
∂
∂
∂
∂ ,,,,,,
,,,1
,,,
00
( )[ ] ( )[ ] ( )
( ) ×−
Φ
++
+× ΦΦΦΦΦ Tzyxk
z
tzyx
Tzyxg
z
DTzyxg I
I
IIIII ,,,
,,,
,,,1,,,1 0
∂
∂
ε
∂
∂
ε
( ) ( ) ( )tzyxITzyxktzyxI II ,,,,,,,,, 2
,+×
( )
( )[ ] ( ) ( )
×
Φ
+
Φ
+=
Φ
ΦΦΦΦ
y
tzyx
y
D
x
tzyx
Tzyxg
x
D
t
tzyx V
V
V
VVV
V
∂
∂
∂
∂
∂
∂
ε
∂
∂
∂
∂ ,,,,,,
,,,1
,,,
00
( )[ ] ( )[ ] ( )
( ) ×+
Φ
++
+× ΦΦΦΦΦ Tzyxk
z
tzyx
Tzyxg
z
DTzyxg II
V
VVVVV ,,,
,,,
,,,1,,,1 ,0
∂
∂
ε
∂
∂
ε
( ) ( ) ( )tzyxITzyxktzyxI I ,,,,,,,,,2
−× .
Farther we determine solutions of above equations as the following power series
( ) ( )∑ Φ=Φ
∞
=
Φ
0
,,,,,,
i
i
i
tzyxtzyx ρρρ ε . (11)
Now we substitute series (11) into Eqs.(6) and conditions for them. The substitution gives a ob-
tain equations for initial-order approximations of concentrations of complexes of defects
Φρ0(x,y,z,t) and corrections for them Φρi(x,y,z,t), i ≥1 and boundary and initial conditions for
them. We present the equations and conditions in Appendix. We obtain solutions of the obtain
equations by using standard Fourier approaches [18,19] and presented in the Appendix.
We calculate distribution of concentration of dopant in space and time by using the same ap-
proach, which was used for calculation distributions of concentrations of radiation defects in
6. International Journal on Organic Electronics (IJOE) Vol.5, No.1/2/3/4, October 2016
6
space and time. To use the approach we transform approximation of dopant diffusion coefficient
to the following form: DL(x,y,z,T)=D0L[1+εLgL(x,y,z,T)]. Here D0L is the average value of diffu-
sion coefficient of dopant, 0≤εL< 1, |gL(x,y,z,T)|≤1. Now we calculate solution of Eq.(1) as the
following power series
( ) ( )∑ ∑=
∞
=
∞
=0 1
,,,,,,
i j
ij
ji
L tzyxCtzyxC ξε .
Now we substitute the above series into boundary problem Eqs.(1) and (2) leads to equations for
the initial-order approximation of concentration of dopant C00(x,y,z,t), corrections for them
Cij(x,y,z,t) (i≥1, j≥1) and conditions for the above equations. The equations are presented in the
Appendix. Solutions of the equations have been calculated by standard Fourier approaches
[18,19]. The solutions are presented in the Appendix.
We analyze distributions of concentrations of dopant and radiation defects in space and time ana-
lytically by using the second-order approximations of considered series. Usually we obtain
enough good qualitative analysis and quantitative results. We check all analytical results by
comparison with results of numerical simulation.
3. DISCUSSION
Now we analyzed distributions of concentrations of dopants in space and time by using calculat-
ed in previous section relations. Figs. 2 show typical distributions of concentrations of dopants
on coordinate near interface between materials of heterostructures in direction, which is perpen-
dicular to the interface. We calculate these distributions for larger value of dopant diffusion coef-
ficient in doped area in comparison of value of dopant diffusion coefficient in nearest areas. The-
se distributions show that in the case sharpness of p-n-junctions increases. At the same time one
can find increasing of homogeneity of distribution of dopant concentration. One can find both
effects for single p-n-junctions and p-n-junctions framework their systems (transistors,
thyristors).
Fig.2a. Spatial distributions of infused dopant concentration in the considered heterostructure. The consid-
ered direction perpendicular to the interface between epitaxial layer substrate. Difference between values
of dopant diffusion coefficient in layers of heterostructure increases with increasing of number of curves
7. International Journal on Organic Electronics (IJOE) Vol.5, No.1/2/3/4, October 2016
7
x
0.0
0.5
1.0
1.5
2.0
C(x,Θ)
2
3
4
1
0 L/4 L/2 3L/4 L
Epitaxial layer Substrate
Fig.2b. Spatial distributions of infused dopant concentration in the considered heterostructure. Curves 1
and 3 corresponds to annealing time Θ = 0.0048(Lx
2
+Ly
2
+Lz
2
)/D0. Curves 2 and 4 corresponds to annealing
time Θ = 0.0057(Lx
2
+ Ly
2
+Lz
2
)/D0. Curves 1 and 2 corresponds to homogenous sample. Curves 3 and 4
corresponds to the considered heterostructure. Difference between values of dopant diffusion coefficient in
layers of heterostructure increases with increasing of number of curves
Now we consider optimization of annealing of dopant and/or radiation defects. To do the optimi-
zation we used recently introduced criterion [16,17,20,21]. Framework the criterion we approxi-
mate real distribution by step-wise function ψ (x,y,z). We calculate optimal annealing time by
minimization the following mean-squared error
( ) ( )[ ]∫ ∫ ∫ −Θ=
x y zL L L
zyx
xdydzdzyxzyxC
LLL
U
0 0 0
,,,,,
1
ψ . (12)
Optimal annealing time as functions of parameters are presented on Figs. 3. It should be noted,
that in the ideal case after finishing of annealing of radiation defects dopant achieves interface
between layers of heterostructure. If the dopant do not achieves the interface, it is practicably to
use additional annealing of the dopant. The Fig. 3b shows just the dependences of optimal values
of additional annealing time. In this situation optimal annealing of implanted dopant is smaller in
comparison with optimal annealing time of infused dopant.
0.0 0.1 0.2 0.3 0.4 0.5
a/L, ξ, ε, γ
0.0
0.1
0.2
0.3
0.4
0.5
ΘD0L
-2
3
2
4
1
Fig.3a. Optimal annealing time of infused dopant as dependences of several parameters. Curve 1 is the
dependence of the considered annealing time on dimensionless thickness of epitaxial layer a/L and ξ=γ=0
for equal to each other values of dopant diffusion coefficient in all parts of heterostructure. Curve 2 is the
dependence of the considered annealing time on the parameter ε for a/L=1/2 and ξ=γ=0. Curve 3 is the
dependence of the considered annealing time on the parameter ξ for a/L=1/2 and ε=γ=0. Curve 4 is the
dependence of the considered annealing time on parameter γ for a/L=1/2 and ε=ξ=0
8. International Journal on Organic Electronics (IJOE) Vol.5, No.1/2/3/4, October 2016
8
0.0 0.1 0.2 0.3 0.4 0.5
a/L, ξ, ε, γ
0.00
0.04
0.08
0.12
ΘD0L
-2
3
2
4
1
Fig.3b. Optimal annealing time of implanted dopant as dependences of several parameters. Curve 1 is the
dependence of the considered annealing time on dimensionless thickness of epitaxial layer a/L and ξ=γ=0
for equal to each other values of dopant diffusion coefficient in all parts of heterostructure. Curve 2 is the
dependence of the considered annealing time on the parameter ε for a/L=1/2 and ξ=γ=0. Curve 3 is the
dependence of the considered annealing time on the parameter ξ for a/L=1/2 and ε=γ=0. Curve 4 is the
dependence of the considered annealing time on parameter γ for a/L=1/2 and ε=ξ=0
4. CONCLUSIONS
We introduce an approach to increase density of elements of an voltage restore. Several recom-
mendations for optimization technological processes were formulated.
ACKNOWLEDGEMENTS
This work is supported by the agreement of August 27, 2013 № 02.В.49.21.0003 between The
Ministry of education and science of the Russian Federation and Lobachevsky State University
of Nizhni Novgorod, educational fellowship for scientific research of Government of Russian
and educational fellowship for scientific research of Government of Nizhny Novgorod region of
Russia.
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[6] H.T. Wang, L.S. Tan, E. F. Chor. Pulsed laser annealing of Be-implanted GaN. J. Appl. Phys. 98
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[8] V.V. Kozlivsky. Modification of semiconductors by proton beams (Nauka, Sant-Peterburg, 2003, in
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[9] V.L. Vinetskiy, G.A. Kholodar', Radiative physics of semiconductors. ("Naukova Dumka", Kiev,
1979, in Russian).
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Appendix
Equations for the functions ( )ϑφηχ ,,,
~
ijkI and ( )ϑφηχ ,,,
~
ijkV , i ≥0, j ≥0, k ≥0 and conditions for
them
( ) ( ) ( ) ( )
2
000
2
0
0
2
000
2
0
0
2
000
2
0
0000 ,,,
~
,,,
~
,,,
~
,,,
~
φ
ϑφηχ
η
ϑφηχ
χ
ϑφηχ
ϑ
ϑφηχ
∂
∂
+
∂
∂
+
∂
∂
=
∂
∂ I
D
DI
D
DI
D
DI
V
I
V
I
V
I
( ) ( ) ( ) ( )
2
000
2
0
0
2
000
2
0
0
2
000
2
0
0000 ,,,
~
,,,
~
,,,
~
,,,
~
φ
ϑφηχ
η
ϑφηχ
χ
ϑφηχ
ϑ
ϑφηχ
∂
∂
+
∂
∂
+
∂
∂
=
∂
∂ V
D
DV
D
DV
D
DV
I
V
I
V
I
V
( ) ( ) ( ) ( ) +
∂
∂
+
∂
∂
+
∂
∂
=
∂
∂
2
00
2
2
00
2
2
00
2
0
000 ,,,
~
,,,
~
,,,
~
,
~
φ
ϑφηχ
η
ϑφηχ
χ
ϑφηχ
ϑ
ϑχ iii
V
Ii III
D
DI
( )
( )
( )
( )
+
∂
∂
∂
∂
+
∂
∂
∂
∂
+ −−
η
ϑφηχ
φηχ
ηχ
ϑφηχ
φηχ
χ
,,,
~
,,,
,,,
~
,,, 100
0
0100
0
0 i
I
V
Ii
I
V
I I
Tg
D
DI
Tg
D
D
( )
( )
∂
∂
∂
∂
+ −
φ
ϑφηχ
φηχ
φ
,,,
~
,,, 100
0
0 i
I
V
I I
Tg
D
D
, i≥1,
( ) ( ) ( ) ( ) +
∂
∂
+
∂
∂
+
∂
∂
=
∂
∂
2
00
2
2
00
2
2
00
2
0
000 ,,,
~
,,,
~
,,,
~
,
~
φ
ϑφηχ
η
ϑφηχ
χ
ϑφηχ
ϑ
ϑχ iii
I
Vi VVV
D
DV
( )
( )
( )
( )
+
∂
∂
∂
∂
+
∂
∂
∂
∂
+ −−
η
ϑφηχ
φηχ
ηχ
ϑφηχ
φηχ
χ
,,,
~
,,,
,,,
~
,,, 100
0
0100
0
0 i
V
I
Vi
V
I
V V
Tg
D
DV
Tg
D
D
17. International Journal on Organic Electronics (IJOE) Vol.5, No.1/2/3/4, October 2016
17
( )
0
,,,
0
=
=z
ij
z
tzyxC
∂
∂
,
( )
0
,,,
=
= zLz
ij
z
tzyxC
∂
∂
, i≥0, j≥0; C00(x,y,z,0)=fC (x,y,z), Cij(x,y,z,0)=0,
i≥1, j≥1.
Solutions of the above equations with account boundary and initial conditions could be written as
( ) ( ) ( ) ( ) ( )∑+=
∞
=1
00
21
,,,
n
nCnnnnC
zyxzyx
tezcycxcF
LLLLLL
tzyxC ,
where ( ) ( )[ ]222
0
22
exp −−−
++−= zyxCnC LLLtDnte π , ( ) ( ) ( ) ( )∫ ∫ ∫=
x y zL L L
nCnnnC udvdwdwcwvufvcucF
0 0 0
,, ;
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ×∑ ∫ ∫ ∫ ∫−−=
∞
=1 0 0 0 0
20 ,,,
2
,,,
n
t L L L
LnnnnCnCnnnnC
zyx
i
x y z
TwvugvcvcusetezcycxcFn
LLL
tzyxC τ
π
( )
( ) ( ) ( ) ( ) ( ) ( ) ( ) ×∑ ∫ ∫ ∫−−
∂
∂
×
∞
=
−
1 0 0 0
2
10 2,,,
n
t L L
nnnCnCnnnnC
zyx
i
x y
vsucetezcycxcFn
LLL
dudvdwd
u
wvuC
τ
π
τ
τ
( ) ( )
( )
( ) ( ) ( ) ( ) ×∑−∫
∂
∂
×
∞
=
−
1
2
0
10 2,,,
,,,
n
nCnnnnC
zyx
L
i
Ln tezcycxcFn
LLL
dudvdwd
v
wvuC
Twvugvc
z π
τ
τ
( ) ( ) ( ) ( ) ( )
( )
∫ ∫ ∫ ∫
∂
∂
−× −
t L L L
i
LnnnnC
x y z
dudvdwd
w
wvuC
Twvugvsvcuce
0 0 0 0
10 ,,,
,,, τ
τ
τ , i≥1;
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ×∑ ∫ ∫ ∫ ∫−−=
∞
=1 0 0 0 0
201
2
,,,
n
t L L L
nnnnCnCnnnnC
zyx
x y z
wcvcusetezcycxcFn
LLL
tzyxC τ
π
( )
( )
( )
( ) ( ) ( ) ( ) ( ) ×∑ ∫ −−
∂
∂
×
∞
=1 0
2
0000 2,,,
,,,
,,,
n
t
nCnCnnnnC
zyx
etezcycxcFn
LLL
dudvdwd
u
wvuC
TwvuP
wvuC
τ
π
τ
ττ
γ
γ
( ) ( ) ( )
( )
( )
( )
( ) ×∑−∫ ∫ ∫
∂
∂
×
∞
=1
2
0 0 0
0000 2,,,
,,,
,,,
n
nC
zyx
L L L
nnn ten
LLL
dudvdwd
v
wvuC
TwvuP
wvuC
wcvsuc
x y z π
τ
ττ
γ
γ
( ) ( ) ( ) ( ) ( ) ( ) ( )
( )
( )
( )
∫ ∫ ∫ ∫
∂
∂
−×
t L L L
nnnnCnnnnC
x y z
dudvdwd
w
wvuC
TwvuP
wvuC
wsvcucezcycxcF
0 0 0 0
0000 ,,,
,,,
,,,
τ
ττ
τ γ
γ
;
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )×∑ ∫ ∫ ∫ ∫−−=
∞
=1 0 0 0 0
202
2
,,,
n
t L L L
nnnnCnCnnnnC
zyx
x y z
wcvcusetezcycxcFn
LLL
tzyxC τ
π
( ) ( )
( )
( ) ( ) ( )×∑−
∂
∂
×
∞
=
−
1
2
00
1
00
01
2,,,
,,,
,,,
,,,
n
nnnC
zyx
ycxcF
LLL
dudvdwd
u
wvuC
TwvuP
wvuC
wvuC
π
τ
ττ
τ γ
γ
( ) ( ) ( ) ( ) ( ) ( ) ( )
( )
( ) ×∫ ∫ ∫ ∫
∂
∂
−×
−t L L L
nnnCnCn
x y z
v
wvuC
TwvuP
wvuC
wvuCvsucetezcn
0 0 0 0
00
1
00
01
,,,
,,,
,,,
,,,
ττ
ττ γ
γ
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )×∑ ∫ ∫ ∫−−×
∞
=1 0 0 0
2
2
n
t L L
nnnCnCnnnnC
zyx
n
x y
vcucetezcycxcFn
LLL
dudvdwdwc τ
π
τ
( ) ( ) ( )
( )
( ) ( )×∑−∫
∂
∂
×
∞
=
−
1
2
0
00
1
00
01
2,,,
,,,
,,,
,,,
n
n
zyx
L
n xcn
LLL
dudvdwd
w
wvuC
TwvuP
wvuC
wvuCws
z π
τ
ττ
τ γ
γ
18. International Journal on Organic Electronics (IJOE) Vol.5, No.1/2/3/4, October 2016
18
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ×∫ ∫ ∫ ∫
∂
∂
−×
t L L L
nnnnCnCnnnC
x y z
u
wvuC
wvuCwcvcusetezcycF
0 0 0 0
00
01
,,,
,,,
τ
ττ
( )
( )
( ) ( ) ( ) ( ) ( ) ( )×∑ ∫ ∫−−×
∞
=
−
1 0 0
2
1
00 2
,,,
,,,
n
t L
nnCnCnnnnC
zyx
x
ucetezcycxcFn
LLL
dudvdwd
TwvuP
wvuC
τ
π
τ
τ
γ
γ
( ) ( ) ( ) ( )
( )
( ) ×∑−∫ ∫
∂
∂
×
∞
=
−
1
2
0 0
00
1
00
01
2,,,
,,,
,,,
,,,
n
zyx
L L
nn n
LLL
dudvdwd
v
wvuC
TwvuP
wvuC
wvuCwcvs
y z π
τ
ττ
τ γ
γ
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
( )
×∫ ∫ ∫ ∫−×
−t L L L
nnnnCnCnnnnC
x y z
TwvuP
wvuC
wvuCwsvcucetezcycxcF
0 0 0 0
1
00
01
,,,
,,,
,,, γ
γ
τ
ττ
( ) ( ) ( ) ( ) ( ) ( ) ( )×∑ ∫ ∫−−
∂
∂
×
∞
=1 0 0
2
00 2,,,
n
t L
nnCnCnnnnC
zyx
x
usetezcycxcF
LLL
dudvdwd
w
wvuC
τ
π
τ
τ
( ) ( ) ( )
( )
( ) ( ) ( )∑ ×−∫ ∫
∂
∂
×
∞
=1
2
0 0
0100 2,,,
,,,
,,,
n
nCn
zyx
L L
nn texc
LLL
dudvdwd
u
wvuC
TwvuP
wvuC
wcvcn
y z π
τ
ττ
γ
γ
( ) ( ) ( ) ( ) ( ) ( )
( )
( ) ×∫ ∫ ∫ ∫
∂
∂
−×
t L L L
nnnnCnnC
x y z
dudvdwd
v
wvuC
TwvuP
wvuC
wcvsuceycF
0 0 0 0
0100 ,,,
,,,
,,,
τ
ττ
τ γ
γ
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )×∑ ∫ ∫ ∫ ∫−−×
∞
=1 0 0 0 0
2
2
n
t L L L
nnnnCnCnnnnC
zyx
n
x y z
wsvcucetezcycxcFn
LLL
zcn τ
π
( )
( )
( ) τ
ττ
γ
γ
dudvdwd
w
wvuC
TwvuP
wvuC
∂
∂
×
,,,
,,,
,,, 0100
;
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )×∑ ∫ ∫ ∫ ∫−−=
∞
=1 0 0 0 0
211
2
,,,
n
t L L L
nnnnCnCnnnnC
zyx
x y z
wcvcusetezcycxcFn
LLL
tzyxC τ
π
( ) ( ) ( ) ( ) ( ) ( ) ×∑−
∂
∂
×
∞
=1
2
01 2,,,
,,,
n
nCnnnnC
zyx
L tezcycxcFn
LLL
dudvdwd
u
wvuC
Twvug
π
τ
τ
( ) ( ) ( ) ( ) ( ) ( ) ×−∫ ∫ ∫ ∫
∂
∂
−× 2
0 0 0 0
01 2,,,
,,,
zyx
t L L L
LnnnnC
LLL
dudvdwd
v
wvuC
Twvugwcvsuce
x y z π
τ
τ
τ
( ) ( ) ( ) ( ) ( ) ( ) ( ) ×∑ ∫ ∫ ∫ ∫
∂
∂
−×
∞
=1 0 0 0 0
01 ,,,
,,,
n
t L L L
LnnnnCnC
x y z
dudvdwd
w
wvuC
Twvugwsvcuceten τ
τ
τ
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ×∑ ∫ ∫ ∫−−×
∞
=1 0 0 0
2
2
n
t L L
nnnCnCnnnnC
zyx
nnnnC
x y
vcusetezcycxcF
LLL
zcycxcF τ
π
( )
( )
( )
( )
( ) ( ) ×∑−∫
∂
∂
×
∞
=1
2
0
1000 2,,,
,,,
,,,
n
nnnC
zyx
L
n ycxcFn
LLL
dudvdwd
u
wvuC
TwvuP
wvuC
wcn
z π
τ
ττ
γ
γ
( ) ( ) ( ) ( ) ( ) ( ) ( )
( )
( ) −∫ ∫ ∫ ∫
∂
∂
−×
t L L L
nnnnCnCn
x y z
dudvdwd
v
wvuC
TwvuP
wvuC
wcvsucetezc
0 0 0 0
1000 ,,,
,,,
,,,
τ
ττ
τ γ
γ
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
( )
×∑ ∫ ∫ ∫ ∫−−
∞
=1 0 0 0 0
00
2
,,,
,,,2
n
t L L L
nnnnCnCnnnnC
zyx
x y z
TwvuP
wvuC
wsvcucetezcycxcFn
LLL γ
γ
τ
τ
π
( ) ( ) ( ) ( ) ( ) ( ) ( )×∑ ∫ ∫−−
∂
∂
×
∞
=1 0 0
2
10 2,,,
n
t L
nnCnCnnnnC
zyx
x
usetezcycxcFn
LLL
dudvdwd
w
wvuC
τ
π
τ
τ
19. International Journal on Organic Electronics (IJOE) Vol.5, No.1/2/3/4, October 2016
19
( ) ( ) ( ) ( )
( )
( ) ×∑−∫ ∫
∂
∂
×
∞
=
−
1
2
0 0
00
1
00
10
2,,,
,,,
,,,
,,,
n
zyx
L L
nn n
LLL
dudvdwd
u
wvuC
TwvuP
wvuC
wvuCwcvc
y z π
τ
ττ
τ γ
γ
( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )
( )
( ) ×∫ ∫ ∫ ∫
∂
∂
−×
−t L L L
nnnnCnCnnnnC
x y z
v
wvuC
TwvuP
wvuC
wcvsucetezcycxcF
0 0 0 0
00
1
00 ,,,
,,,
,,, ττ
τ γ
γ
( ) ( ) ( ) ( ) ( ) ( ) ( )×∑ ∫ ∫−−×
∞
=1 0 0
210
2
,,,
n
t L
nnCnCnnnnC
zyx
x
ucetezcycxcFn
LLL
dudvdwdwvuC τ
π
ττ
( ) ( ) ( ) ( )
( )
( )
∫ ∫
∂
∂
×
−y z
L L
nn dudvdwd
w
wvuC
TwvuP
wvuC
wvuCwsvc
0 0
00
1
00
10
,,,
,,,
,,,
,,, τ
ττ
τ γ
γ
.
Authors:
Pankratov Evgeny Leonidovich was born at 1977. From 1985 to 1995 he was educated in a secondary
school in Nizhny Novgorod. From 1995 to 2004 he was educated in Nizhny Novgorod State University:
from 1995 to 1999 it was bachelor course in Radiophysics, from 1999 to 2001 it was master course in
Radiophysics with specialization in Statistical Radiophysics, from 2001 to 2004 it was PhD course in
Radiophysics. From 2004 to 2008 E.L. Pankratov was a leading technologist in Institute for Physics of
Microstructures. From 2008 to 2012 E.L. Pankratov was a senior lecture/Associate Professor of Nizhny
Novgorod State University of Architecture and Civil Engineering. 2012-2015 Full Doctor course in
Radiophysical Department of Nizhny Novgorod State University. Since 2015 E.L. Pankratov is an Associ-
ate Professor of Nizhny Novgorod State University. He has 155 published papers in area of his researches.
Bulaeva Elena Alexeevna was born at 1991. From 1997 to 2007 she was educated in secondary school of
village Kochunovo of Nizhny Novgorod region. From 2007 to 2009 she was educated in boarding school
“Center for gifted children”. From 2009 she is a student of Nizhny Novgorod State University of Architec-
ture and Civil Engineering (spatiality “Assessment and management of real estate”). At the same time she
is a student of courses “Translator in the field of professional communication” and “Design (interior art)”
in the University. Since 2014 E.A. Bulaeva is in a PhD program in Radiophysical Department of Nizhny
Novgorod State University. She has 103 published papers in area of her researches.