This document summarizes research that analyzed the effect of temperature on the parameters of silicon solar cells. It was found that the open circuit voltage (Voc) of the solar cells decreases linearly as temperature increases from 20°C to 80°C. In contrast, the short circuit current (Isc) was found to increase only slightly with higher temperatures. The maximum efficiency of 18.5% was obtained at 20°C when Voc was 667.3mV and Isc was 37.56mA. Overall, the study demonstrated that higher temperatures negatively impact the Voc, fill factor, and efficiency of silicon solar cells.

1. International Association of Scientific Innovation and Research (IASIR)
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International Journal of Emerging Technologies in Computational
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IJETCAS 14-643; © 2014, IJETCAS All Rights Reserved Page 305
ISSN (Print): 2279-0047
ISSN (Online): 2279-0055
The Effect of Temperatures on the Silicon Solar Cell
Asif Javed
Department of Physics
GC University, Faisalabad – 38000, Pakistan
__________________________________________________________________________________________
Abstract: In this research work, described the effect of temperatures on the silicon solar cells parameters such as open circuit voltage, short circuit current, fill factor and efficiency. These all parameters are the function of temperature to understand the performances of silicon solar cells at temperature range (20-80)OC and estimated variation of silicon solar cells parameters such as short circuit current I sc increases so tedious with temperature but voltage Voc decreases regularly and shows linearly behavior on this temperature conditions. The fill factor and efficiency variations are directly proportional to the Isc and Voc respectively.. On this temperature range the maximum efficiency of (18.5%) is obtained in which I sc= 37.56 mA and Voc=667.3 mV.
Keywords: silicon solar cell; open circuit voltage; short circuit current; temperature; linearly; efficiency.
_________________________________________________________________________________________
I. Introduction
To estimate the performances of silicon solar cells under different conditions such as irradiance and temperature [1].Solar radiation produces great effect on the performance of silicon solar cell in the form of temperature. There are so many parameters can effects on the performances of solar cells working in which most prominent is temperature. A standard solar cell conditions are solar radiation is equal 1kW/m2 and temperature usually 25OC [2].In this paper, we talk about the solar cells effects on the temperature variation. For that purpose only crystalline silicon solar cells were used.
II. Silicon Solar Cells
The temperature performance of crystalline silicon solar cells were studied because c-Si solar cells most promising substance in the field of photovoltaic application, specially used for the solar cell among low cost and a large area [3-4]. There are so many technologies that produce energy but all of these are harming full but the only solar energy is environmental friendly and non toxic. In photovoltaic industry different material are used in which silicon most popular candidate due to its easily availability and this silicon further divide into some categories such as amorphous, crystalline and multi-crystalline. The most silicon solar cells made by crystalline material because of excess of existing in the earth about 80% [5-6].
III. Simulated Parameters Details
In this section describes the main parameters of the silicon solar cells base on different quantities. Short circuit and open circuit voltage is function of temperature.
A. Open Circuit Voltage
Maximum voltage of the solar cell which can be delivering and open circuit voltage no flow of current exist.
It calculates by the formula (VOC).Open circuit voltage depends on Jo Saturation current. Open Circuit Voltage decrease with increase the temperature in regular interval
(1)
Where, K, is Boltzmann constant, T, is the temperature, q is the electronic charge, J ph, is the photocurrent, and Jo, is the diode saturation current.
B. Short Circuit Current
Short circuit current is the maximum current of the solar in the circuit and no open circuit voltage no exist. It calculates by the formula (ISC).
(2)
Where, q is the electronic charge, G, Ln, Lp
C. Fill Factor
An optimal output power needs for electrical engineering through load resistor Ra. The maximum power (Pm) is obtain from where Im and Vm locate points. FF Factor is ratio (Vm x Im) to (VOC x ISC) is given: Why we called

2. Asif Javed., International Journal of Emerging Technologies in Computational and Applied Sciences, 9(3), June-August, 2014, pp. 305-308
IJETCAS 14-643; © 2014, IJETCAS All Rights Reserved Page 306
fill factor because of graphically show the covered area under I-V curve are fill by two rectangles first one is Vmx Im and VOC x ISC). 0.75 to 0.85 this is range of normally fill Factor.
(3)
Where Vm, maximum voltage, Im, maximum current, Voc, open circuit voltage and Isc, short circuit current.
D. Efficiency
Efficiency of the solar cell is calculated by the ratio maximum power generated verus incoming power. The incoming solar intensity Pin is 1000W/m2 of spectrum 1.5AM
(4)
Where Vm, maximum voltage, Im, maximum current, Voc, open circuit voltage, Isc, short circuit current and Plight, Power light
IV. Result and discursions
The most important parameter of silicon solar cell efficiency is open circuit voltage (Voc). It is function of temperature which shown in equation [1]. For Temperature range 20 to 80 thickness =100μm. The Voc decreases as temperature increased as shown in table (1).
Table I: Open circuit voltage verse Temperature
T(OC)
Vsc(mv)
20
663.9
25
654.9
30
645.4
35
635.7
40
625.9
45
615.9
50
606.0
55
595.9
60
585.8
65
575.7
70
565.6
75
555.4
80
545.2
Figure (1) shows the effect of temperature variation on the Voc. At 20oC° the Voc has it higher value of 663.9 mV and increased with temperature to achieve its minimum value of 545.2mV at 80C° and its regularly decreeing with temperature increased.
Figure 1: Variation of VOC with Temperature at 100μm
102030405060708090540560580600620640660680. Voc(mv) Voc(mv) Temp (oC) Thickness = 100mBulk Recombination=  n=  p=100s

3. Asif Javed., International Journal of Emerging Technologies in Computational and Applied Sciences, 9(3), June-August, 2014, pp. 305-308
IJETCAS 14-643; © 2014, IJETCAS All Rights Reserved Page 307
he short circuit current Isc of the silicon solar cell minor depending on temperature as shown in equation [2].The
short circuit current, Isc, versus temperature is shown in table below:
Table II: Short circuit current versus temperature
T(OC) Isc(mA)
20 37.49
25 37.50
30 37.51
35 37.52
40 37.52
45 37.53
50 37.53
55 37.54
60 37.54
65 37.55
70 37.55
75 37.56
80 37.56
Figure (2) shows that the effect of temperature variation on I sc. The short circuit current Isc was minor increase
with temperature which almost no change and tends to arrive at its maximum value of (37.56 mA) at
temperature of (80°C). Isc start to almost no depends on temperature increase and minimum value 37.49 mA at
T=20°C.
Figure 2: Variation of ISC with Temperature at 100μm.
10 20 30 40 50 60 70 80 90
37.48
37.50
37.52
37.54
37.56
I
SC
(mA)
I
sc
(mA)
Temp(oC)
Thickness = 100m
Bulk Recombination= 
n
= 
p
=100s
.
The efficiency of Silicon solar cell is most important parameter which shows the performance on temperature
and FF of Silicon Solar cell between 0.75 to 0.85 on standard solar irradiation 1kw/m2 in equation [4] The
efficiency at different temperatures is shown in table below:
Table III: The Temperature of Silicon solar cell versus External Parameters
T(OC) Isc(mA) Voc(mv) η(%)
20 37.49 663.9 18.34
25 37.50 654.9 17.97
30 37.51 645.4 17.57
35 37.52 635.7 17.17
40 37.52 625.9 16.78
45 37.53 615.9 16.55
50 37.53 606.0 16.16
55 37.54 595.9 15.76
60 37.54 585.8 15.35
65 37.55 575.7 14.94
70 37.55 565.6 14.53
75 37.56 555.4 14.12
80 37.56 545.2 13.71

4. Asif Javed., International Journal of Emerging Technologies in Computational and Applied Sciences, 9(3), June-August, 2014, pp. 305-308
IJETCAS 14-643; © 2014, IJETCAS All Rights Reserved Page 308
In Figure shows that maximum value of efficiency 18.34% at Temperature 20 oC and at Temperature 80 oC
obtained minimum. The open circuit voltage increased with decreased Temperature.
Figure 3: Variation of ƞ with Temperature at 100μm.
10 20 30 40 50 60 70 80 90
13
14
15
16
17
18
19
Bulk Recombination= 
n
= 
p
=100s
Thickness = 100m

Temp (OC)

V. Conclusion
In this study we have evaluated effect of temperature on the performance of thin film silicon solar cell made up
materials like crystalline. For that purpose simulation of TF solar cells was performed by using PC1D. The
temperature is varied from 20 – 80 C while solar cell thickness was varied from 100 micron down to 1 micron.
It is observed that the Voc, FF and efficiency decreases with increasing temperature whereas Jsc shows almost
no appreciable change and maximum value of 157 mV at 89° C is obtained. The short circuit current (Isc)
increase with temperature increases until reaching a maximum value of 92 mA at 85°C and then decreases for
highest temperatures. The efficiency follows the changes of open circuit voltage and short circuit current.
Maximum Efficiency was achieved η=18.34% in PCID with Thickness 100μm at temperature 20OC. Figure (4)
show the changes of Voc, Isc and η in each case.
References
[1] Tsuno, Y., Hishikawa, Y., & Kurokawa, K. (2005). Temperature and irradiance dependence of the IV curves of various
kinds of solar cells. In 15th international photovoltaic science & engineering conference (PVSEC-15) (No. 1).
[2] Singh, P. & Ravindra, N.M. (2012). Temperature dependence of solar cell performance an analysis. Solar Energy Materials
& Solar Cells, 101, 36-45.
[3] Carlson DE. Monolithic amorphous silicon alloy solar modules. Solar Energy Materials and Solar Cells 2003;78:627–45.
[4] V. Fthenakis, Third Generation Photovoltaics, pp.202, InTech Publisher, Croatia 2012
[5] Z. C. Liang, D. M. Chen, X. Q. Liang, Z. J. Yang, H. Shen, and J. Shi, “Crystalline Si solar cells based on solar grade silicon
materials”, Renewable Energy, vol. 35, no.10, pp.2297-2300,Oct. 2010.