This document summarizes the performance enhancement and characterization of a junctionless vertical slit field effect transistor (JLVeSFET). Key findings from simulations include:
1) The JLVeSFET shows an optimized subthreshold slope of 65mV/decade and OFF current of ~10-18A/μm for a 50nm radius device with a high-k dielectric.
2) Using a high-k dielectric (Si3N4) instead of SiO2 increases the Ion/Ioff ratio to ~1011 and reduces the subthreshold slope to 63mV/decade.
3) Increasing the gate doping concentration reduces the subthreshold slope slightly while increasing the Ion/
Design of a current Mode Sample and Hold Circuit at sampling rate of 150 MS/sIJERA Editor
A current mode sample and hold circuit is presented in this paper at 180nm technology. The major concerns of
VLSI are area, power, delay and speed. Hence, we have used a MOSFET in triode region in the proposed
architecture for voltage to current conversion instead of a resistor being used in previously proposed circuit. The
proposed circuit achieves high sampling frequency and with more accuracy than the previous one. The
performance of the proposed circuit is depicted in the form of simulation results.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology U...IJERA Editor
According to the Moore’s Law, the number of transistors in a unit chip area double every two years. But the existing technology of integrated circuit formation is posing limitations to this law. CMOS technology shows certain limitations as the device is reduced more and more in the nanometer regime out of which power dissipation is an important issue. FinFET is evolving to be a promising technology in this regard. This paper aims to analyze and compare the characteristics of CMOS and FinFET circuits at 45nm technology. Inverter circuit is implemented in order to study the basic characteristics such as voltage transfer characteristics, leakage current and power dissipation. Further the efficiency of FinFET to reduce power as compared to CMOS is proved using SRAM circuit. The results show that the average power is reduced by 92.93% in read operation and by 97.8% in write operation.
Design of a current Mode Sample and Hold Circuit at sampling rate of 150 MS/sIJERA Editor
A current mode sample and hold circuit is presented in this paper at 180nm technology. The major concerns of
VLSI are area, power, delay and speed. Hence, we have used a MOSFET in triode region in the proposed
architecture for voltage to current conversion instead of a resistor being used in previously proposed circuit. The
proposed circuit achieves high sampling frequency and with more accuracy than the previous one. The
performance of the proposed circuit is depicted in the form of simulation results.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology U...IJERA Editor
According to the Moore’s Law, the number of transistors in a unit chip area double every two years. But the existing technology of integrated circuit formation is posing limitations to this law. CMOS technology shows certain limitations as the device is reduced more and more in the nanometer regime out of which power dissipation is an important issue. FinFET is evolving to be a promising technology in this regard. This paper aims to analyze and compare the characteristics of CMOS and FinFET circuits at 45nm technology. Inverter circuit is implemented in order to study the basic characteristics such as voltage transfer characteristics, leakage current and power dissipation. Further the efficiency of FinFET to reduce power as compared to CMOS is proved using SRAM circuit. The results show that the average power is reduced by 92.93% in read operation and by 97.8% in write operation.
DESIGN OF A HIGH PRECISION, WIDE RANGED ANALOG CLOCK GENERATOR WITH FIELD PRO...VLSICS Design
This paper presents a circuit of a high-precision, wide ranged, analog clock generator with on-chip programmability feature using Floating-gate transistors. The programmable oscillator can attain a continuous range of time-periods lying in the programming precision range of Floating Gates. The circuit consists of two sub circuits: Current Generator circuit and Wave Generator circuit. The current of current generator circuit is programmable and mirrored to the wave generator to generate the desired square wave. The topology is well suited to applications like clocking high performance ADCs and DACs as well as used as the internal clock in structured analog CMOS designs. A simulation model of the circuit was built in T-Spice, 0.35µm CMOS process. The circuit results in finely tuned clock with programmability precision of about 13bit [1]. Simulation results show high amount of temperature insensitivity (0.507ns/°C) for a large range of thermal conditions. The proposed circuit can compensate any change in temperature. The circuit design can be operated at low supply voltage i.e., 1v.
Design of ultra low power 8 channel analog multiplexer using dynamic threshol...VLSICS Design
The design of an ultra low voltage, low power high
speed 8 channel Analog multiplexer in 180nm CMOS
technology is presented. A modified transmission ga
te using a dynamic threshold voltage MOSFET
(DTMOS
)
is employed in the design. The design is optimized
with respect to critical requirements like short
switching time, low power dissipation, good lineari
ty and high dynamic range with an operating voltage
of
0.4V. The ON and OFF resistances achieved are 32 oh
ms and 10Mohms respectively with a switching
speed of 10MHz. The power dissipation obtained is a
round 2.65uW for a dynamic range of 1uV to 0.4V.
Implementation of a High Speed and Power Efficient Reliable Multiplier Using ...iosrjce
IOSR Journal of Electronics and Communication Engineering(IOSR-JECE) is a double blind peer reviewed International Journal that provides rapid publication (within a month) of articles in all areas of electronics and communication engineering and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in electronics and communication engineering. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
A coupled-line balun for ultra-wideband single-balanced diode mixerTELKOMNIKA JOURNAL
A multi-section coupled-line balun design for an ultra-wideband diode mixer is presented in this paper. The multi-section coupled-line balun was used to interface with the diode mixer in which it can deliver a good impedance matching between the diode mixer and input/output ports. The mixer design operates with a Local Oscillator (LO) power level of 10 dBm, Radio Frequency (RF) power level of -20 dBm and Intermediate Frequency (IF) of 100 MHz with the balun characteristic of 180° phase shift over UWB frequency (3.1 to 10.6 GHz), the mixer design demonstrated a good conversion loss of -8 to -16 dB over the frequency range from 3.1 to 10.6 GHz. Therefore, the proposed multi-section coupled-line balun for application of UWB mixer showed a good isolation between the mixer’s ports.
Review on High Gain and High Performance N Polar GaN MIS HEMT at 30 GHzijtsrd
The GaN HEMTs are well suited for receiver applications. But non linearities, such as third order inter modulation products can lead to signal distortion. Such non linearities are dominated by transconductance and its derivatives. A modified device structure of N polar GaN MIS HEMTs designed for high gain, have excellent linearity performance for low power receiver applications at 30 GHz. An OIP3 PDC of up to 15dB is demonstrated at 30 GHz using a vector receiver load pull system. Padmam Gopinath Kaimal "Review on High Gain and High Performance N-Polar GaN MIS-HEMT at 30 GHz" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-5 | Issue-1 , December 2020, URL: https://www.ijtsrd.com/papers/ijtsrd38158.pdf Paper URL : https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/38158/review-on-high-gain-and-high-performance-npolar-gan-mishemt-at-30-ghz/padmam-gopinath-kaimal
Geometric and process design of ultra-thin junctionless double gate vertical ...IJECEIAES
The junctionless MOSFET architectures appear to be attractive in realizing the Moore’s law prediction. In this paper, a comprehensive 2-D simulation on junctionless vertical double-gate MOSFET (JLDGVM) under geometric and process consideration was introduced in order to obtain excellent electrical characteristics. Geometrical designs such as channel length (Lch) and pillar thickness (Tp) were considered and the impact on the electrical performance was analyzed. The influence of doping concentration and metal gate work function (WF) were further investigated for achieving better performance. The results show that the shorter Lch can boost the drain current (ID) of n-JLDGVM and p-JLDGVM by approximately 68% and 70% respectively. The ID of the n-JLVDGM and p-JLVDGM could possibly boost up to 42% and 78% respectively as the Tp is scaled down from 11nm to 8nm. The channel doping (Nch) is also a critical parameter, affecting the electrical performance of both n-JLDGVM and p-JLDGVM in which 15% and 39% improvements are observed in their respective ID as the concentration level is increased from 1E18 to 9E18 atom/cm3. In addition, the adjustment of threshold voltage can be realized by varying the metal WF.
DC performance analysis of a 20nm gate length n-type Silicon GAA junctionless...IJECEIAES
With integrated circuit scales in the 22-nm regime, conventional planar MOSFETs have approached the limit of their potential performance. To overcome short channel effects 'SCEs' that appears for deeply scaled MOSFETs beyond 10nm technology node many new device structures and channel materials have been proposed. Among these devices such as Gate-all-around FET. Recentely, junctionless GAA MOSFETs JL-GAA MOSFETs have attracted much attention since the junctionless MOSFET has been presented. In this paper, DC characteristics of an n-type JL-GAA MOSFET are presented using a 3-D quantum transport model. This new generation device is conceived with the same doping concentration level in its channel source/drain allowing to reduce fabrication complexity. The performance of our 3D JL-GAA structure with a 20nm gate length and a rectangular cross section have been obtained using SILVACO TCAD tools allowing also to study short channel effects. Our device reveals a favorable on/off current ratio and better SCE characteristics compared to an inversionmode GAA transistor. Our device reveals a threshold voltage of 0.55 V, a sub-threshold slope of 63mV / decade which approaches the ideal value, an Ion/Ioff ratio of 10e + 10 value and a drain induced barrier lowring (DIBL) value of 98mV/V.
PARASITIC-AWARE FULL PHYSICAL CHIP DESIGN OF LNA RFIC AT 2.45GHZ USING IBM 13...Ilango Jeyasubramanian
• Analyzed and designed a single stage cascoded LNA with Q-based calculation for desired input matching, output matching, power gain, IIP3 and Noise figure, including all the parasitics in the on-chip and off-chip components using SpectreRF simulations.
• Synthesized the LNA layout for on-chip components with spiral inductor, MOS capacitor, MIM capacitor and Bond-pads with ESD protections.
• Our LNA exhibited a noise figure of 1.23dB, linear gain of 18.54 dB, IIP3 of -4.60dbm, S11 of -31.11db, S22 of -24.91db with the operating range between 2.4-2.5GHZ along with 10% variation tolerance.
Implementation of Full Adder Cell Using High Performance CMOS Technologyijsrd.com
This paper proposed design and implementation of full adder cell which is efficient in terms of both speed and energy consumption which becomes even more significant as the world length of the adder increases. We are introducing adders for low power imprecise applications. In this we propose a full adder design having low complexity, higher computing speed, lower energy consumption, and lower operating voltage. We will explain how to realize a general full adder circuit based on transistor using CMOS technology. The performance of the proposed full adder is evaluated by the comparison of the simulation result. In this system, not signals are generated internally that control the selection of the output multiplexers. Instead, the input signal, exhibiting a full voltage swing and no extra delay, is used to drive the multiplexers, reducing the overall propagation delays. The capacitive load for the input has been reduced, as it is connected only to some transistor gates and some drain or source terminals. The design a full adder having low complexity, higher computing speed, lower energy consumption, and lower operating voltage. Full Adder models to make it understandable for designer. We are giving high throughput with less complex system by showing synthesizable and simulated results.
High Performance and Low power VLSI CMOS Circuit Designs using ONOFIC Approach IJERA Editor
Leakage power dissipation a major concern for scaling down portable devices. Improving high performance with reduced power consumption and chip area are the main constraint for designing VLSI CMOS circuits. In this paper, high performance and low power ONOFIC approach for VLSI CMOS circuits have been implemented. Mostly the concentrated part in deep sub micron regime is the power dissipation. Many techniques have been proposed for reducing leakage current in deep sub micron but with some limitations they are not suitable for actual requirements. Here we discussed two techniques named LECTOR & ONOFIC. The proposed On/Off Logic (ONOFIC) serves the needs for deep sub micron with its reduced power dissipation and increased performance in VLSI circuits. Thus the proposed ONOFIC approach results have been compared with the LECTOR technique and observed that the proposed technique improves the performance and reduce the power dissipation.
An operational amplifier with recycling folded cascode topology and adaptive ...VLSICS Design
This paper presents a highly adaptive operational amplifier with high gain, high bandwidth, high speed
and low power consumption. By adopting the recycling folded cascode topology along with an adaptivebiasing
circuit, this design achieves high performance in terms of gain-bandwidth product (GBW) and slew
rate (SR). This single stage op-amp has been designed in 0.18μm technology with a power supply of 1.8V
and a 5pF load. The simulation results show that the amplifier achieved a GBW of 335.5MHz, Unity Gain
Bandwidth of 247.1MHz and a slew rate of 92.8V/μs.
ULTRA HIGH SPEED FACTORIAL DESIGN IN SUB-NANOMETER TECHNOLOGYcscpconf
This work proposes a high speed and low power factorial design in 22nm technology and also it counts the effect of sub nano-meter constraints on this circuit. A comparative study for this
design has been done for 90nm, 45nm and 22nm technology. The rise in circuit complexity and speed is accompanied by the scaling of MOSFET’s. The transistor saturation current Idsat is an important parameter because the transistor current determines the time needed to charge and discharge the capacitive loads on chip, and thus impacts the product speed more than any other transistor parameter. The efficient implementation of a factorial number is carried out by using
a decremented and multipliers which has been lucidly discussed in this paper. Normally in a factorial module a number is calculated as the iterative multiplication of the given number to
the decremented value of the given number. A Parallel adder based decremented has been proposed for calculating the factorial of any number that also includes 0 and 1. The
performances are calculated by using the existing 90-nm CMOS technology and scaling down the existing technology to 45-nm and 22-nm.
Performance analysis of cmos comparator and cntfet comparator designeSAT Publishing House
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
AN ULTRA-LOW POWER ROBUST KOGGESTONE ADDER AT SUB-THRESHOLD VOLTAGES FOR IMPL...VLSICS Design
The growing demand for energy constrained applications and portable devices have created a dire need for
ultra-low power circuits. Implantable biomedical devices such as pacemakers need ultra-low power
circuits for a better battery life for uninterrupted biomedical data processing. Circuits operating in subthreshold
region minimize the energy per operation, thus providing a better platform for energy
constrained implantable biomedical devices. This paper presents 8, 16 and 32-bit ultra-low power robust
Kogge-Stone adders with improved performance. These adders operate at subthreshold supply voltages
which can be used for low power implantable bio-medical devices such as pacemakers. To improve the
performance of these adders in sub-threshold region, forward body bias technique and multi-threshold
transistors are used. The adders are designed using NCSU 45nm bulk CMOS process library and the
simulations were performed using HSPICE circuit simulator. Quantitative power-performance analysis is
performed at slow-slow (SS), typical-typical (TT) and fast-fast (FF) corners clocked at 50 KHz for
temperature ranging from 25̊C to 120̊C. For a supply voltage 0.3V, all the adders had the least PDP. Using
0.3V as the supply voltage, multi threshold voltage and forward body biasing techniques were applied to
further improve the performance of the adders. The PDP obtained using the forward body biasing
technique shows an effective improvement compared to high threshold voltage and multi threshold voltage
techniques. The forward biasing technique maintains a balance between delay reduction and increase in
average power, thus reducing the power delay product when compared to the other two techniques.
Quantum-dot Cellular Automata (QCA) is an alternative innovation to the
Complementary Metal Oxide Semiconductor (CMOS) because CMOS has scaling
limitations that lead to high leakage power. QCA is structured on quantum cells, whose
sizes are on the nanoscale. This component causes faults in QCA circuits. Converting
a code into another that is programmed in logic arrays becomes important in the
physical realization of the circuits. There are many methods to resolve this problem in
circuits. A code converter is a solution to convert one code into another. In this paper,
QCA-based “4-bit binary-to-gray” and “4-bit gray-to-binary code converters” are
suggested. The offered layout prospects to a decrease in energy expenditure and can
be utilized in many fields for shielding data from outsiders and increasing information
flexibility. We executed a relative analysis of the suggested design with present earlier
designs and turned out that the suggested layout is productive on condition that
complexity, cell count, area intake, and clocking. This paper offers a streamlined design
and layout concerning code converters depending on QCA. These structures are
designed with the QCADesigner, simulator and the simulation results are examined.
DESIGN OF A HIGH PRECISION, WIDE RANGED ANALOG CLOCK GENERATOR WITH FIELD PRO...VLSICS Design
This paper presents a circuit of a high-precision, wide ranged, analog clock generator with on-chip programmability feature using Floating-gate transistors. The programmable oscillator can attain a continuous range of time-periods lying in the programming precision range of Floating Gates. The circuit consists of two sub circuits: Current Generator circuit and Wave Generator circuit. The current of current generator circuit is programmable and mirrored to the wave generator to generate the desired square wave. The topology is well suited to applications like clocking high performance ADCs and DACs as well as used as the internal clock in structured analog CMOS designs. A simulation model of the circuit was built in T-Spice, 0.35µm CMOS process. The circuit results in finely tuned clock with programmability precision of about 13bit [1]. Simulation results show high amount of temperature insensitivity (0.507ns/°C) for a large range of thermal conditions. The proposed circuit can compensate any change in temperature. The circuit design can be operated at low supply voltage i.e., 1v.
Design of ultra low power 8 channel analog multiplexer using dynamic threshol...VLSICS Design
The design of an ultra low voltage, low power high
speed 8 channel Analog multiplexer in 180nm CMOS
technology is presented. A modified transmission ga
te using a dynamic threshold voltage MOSFET
(DTMOS
)
is employed in the design. The design is optimized
with respect to critical requirements like short
switching time, low power dissipation, good lineari
ty and high dynamic range with an operating voltage
of
0.4V. The ON and OFF resistances achieved are 32 oh
ms and 10Mohms respectively with a switching
speed of 10MHz. The power dissipation obtained is a
round 2.65uW for a dynamic range of 1uV to 0.4V.
Implementation of a High Speed and Power Efficient Reliable Multiplier Using ...iosrjce
IOSR Journal of Electronics and Communication Engineering(IOSR-JECE) is a double blind peer reviewed International Journal that provides rapid publication (within a month) of articles in all areas of electronics and communication engineering and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in electronics and communication engineering. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
A coupled-line balun for ultra-wideband single-balanced diode mixerTELKOMNIKA JOURNAL
A multi-section coupled-line balun design for an ultra-wideband diode mixer is presented in this paper. The multi-section coupled-line balun was used to interface with the diode mixer in which it can deliver a good impedance matching between the diode mixer and input/output ports. The mixer design operates with a Local Oscillator (LO) power level of 10 dBm, Radio Frequency (RF) power level of -20 dBm and Intermediate Frequency (IF) of 100 MHz with the balun characteristic of 180° phase shift over UWB frequency (3.1 to 10.6 GHz), the mixer design demonstrated a good conversion loss of -8 to -16 dB over the frequency range from 3.1 to 10.6 GHz. Therefore, the proposed multi-section coupled-line balun for application of UWB mixer showed a good isolation between the mixer’s ports.
Review on High Gain and High Performance N Polar GaN MIS HEMT at 30 GHzijtsrd
The GaN HEMTs are well suited for receiver applications. But non linearities, such as third order inter modulation products can lead to signal distortion. Such non linearities are dominated by transconductance and its derivatives. A modified device structure of N polar GaN MIS HEMTs designed for high gain, have excellent linearity performance for low power receiver applications at 30 GHz. An OIP3 PDC of up to 15dB is demonstrated at 30 GHz using a vector receiver load pull system. Padmam Gopinath Kaimal "Review on High Gain and High Performance N-Polar GaN MIS-HEMT at 30 GHz" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-5 | Issue-1 , December 2020, URL: https://www.ijtsrd.com/papers/ijtsrd38158.pdf Paper URL : https://www.ijtsrd.com/engineering/electronics-and-communication-engineering/38158/review-on-high-gain-and-high-performance-npolar-gan-mishemt-at-30-ghz/padmam-gopinath-kaimal
Geometric and process design of ultra-thin junctionless double gate vertical ...IJECEIAES
The junctionless MOSFET architectures appear to be attractive in realizing the Moore’s law prediction. In this paper, a comprehensive 2-D simulation on junctionless vertical double-gate MOSFET (JLDGVM) under geometric and process consideration was introduced in order to obtain excellent electrical characteristics. Geometrical designs such as channel length (Lch) and pillar thickness (Tp) were considered and the impact on the electrical performance was analyzed. The influence of doping concentration and metal gate work function (WF) were further investigated for achieving better performance. The results show that the shorter Lch can boost the drain current (ID) of n-JLDGVM and p-JLDGVM by approximately 68% and 70% respectively. The ID of the n-JLVDGM and p-JLVDGM could possibly boost up to 42% and 78% respectively as the Tp is scaled down from 11nm to 8nm. The channel doping (Nch) is also a critical parameter, affecting the electrical performance of both n-JLDGVM and p-JLDGVM in which 15% and 39% improvements are observed in their respective ID as the concentration level is increased from 1E18 to 9E18 atom/cm3. In addition, the adjustment of threshold voltage can be realized by varying the metal WF.
DC performance analysis of a 20nm gate length n-type Silicon GAA junctionless...IJECEIAES
With integrated circuit scales in the 22-nm regime, conventional planar MOSFETs have approached the limit of their potential performance. To overcome short channel effects 'SCEs' that appears for deeply scaled MOSFETs beyond 10nm technology node many new device structures and channel materials have been proposed. Among these devices such as Gate-all-around FET. Recentely, junctionless GAA MOSFETs JL-GAA MOSFETs have attracted much attention since the junctionless MOSFET has been presented. In this paper, DC characteristics of an n-type JL-GAA MOSFET are presented using a 3-D quantum transport model. This new generation device is conceived with the same doping concentration level in its channel source/drain allowing to reduce fabrication complexity. The performance of our 3D JL-GAA structure with a 20nm gate length and a rectangular cross section have been obtained using SILVACO TCAD tools allowing also to study short channel effects. Our device reveals a favorable on/off current ratio and better SCE characteristics compared to an inversionmode GAA transistor. Our device reveals a threshold voltage of 0.55 V, a sub-threshold slope of 63mV / decade which approaches the ideal value, an Ion/Ioff ratio of 10e + 10 value and a drain induced barrier lowring (DIBL) value of 98mV/V.
PARASITIC-AWARE FULL PHYSICAL CHIP DESIGN OF LNA RFIC AT 2.45GHZ USING IBM 13...Ilango Jeyasubramanian
• Analyzed and designed a single stage cascoded LNA with Q-based calculation for desired input matching, output matching, power gain, IIP3 and Noise figure, including all the parasitics in the on-chip and off-chip components using SpectreRF simulations.
• Synthesized the LNA layout for on-chip components with spiral inductor, MOS capacitor, MIM capacitor and Bond-pads with ESD protections.
• Our LNA exhibited a noise figure of 1.23dB, linear gain of 18.54 dB, IIP3 of -4.60dbm, S11 of -31.11db, S22 of -24.91db with the operating range between 2.4-2.5GHZ along with 10% variation tolerance.
Implementation of Full Adder Cell Using High Performance CMOS Technologyijsrd.com
This paper proposed design and implementation of full adder cell which is efficient in terms of both speed and energy consumption which becomes even more significant as the world length of the adder increases. We are introducing adders for low power imprecise applications. In this we propose a full adder design having low complexity, higher computing speed, lower energy consumption, and lower operating voltage. We will explain how to realize a general full adder circuit based on transistor using CMOS technology. The performance of the proposed full adder is evaluated by the comparison of the simulation result. In this system, not signals are generated internally that control the selection of the output multiplexers. Instead, the input signal, exhibiting a full voltage swing and no extra delay, is used to drive the multiplexers, reducing the overall propagation delays. The capacitive load for the input has been reduced, as it is connected only to some transistor gates and some drain or source terminals. The design a full adder having low complexity, higher computing speed, lower energy consumption, and lower operating voltage. Full Adder models to make it understandable for designer. We are giving high throughput with less complex system by showing synthesizable and simulated results.
High Performance and Low power VLSI CMOS Circuit Designs using ONOFIC Approach IJERA Editor
Leakage power dissipation a major concern for scaling down portable devices. Improving high performance with reduced power consumption and chip area are the main constraint for designing VLSI CMOS circuits. In this paper, high performance and low power ONOFIC approach for VLSI CMOS circuits have been implemented. Mostly the concentrated part in deep sub micron regime is the power dissipation. Many techniques have been proposed for reducing leakage current in deep sub micron but with some limitations they are not suitable for actual requirements. Here we discussed two techniques named LECTOR & ONOFIC. The proposed On/Off Logic (ONOFIC) serves the needs for deep sub micron with its reduced power dissipation and increased performance in VLSI circuits. Thus the proposed ONOFIC approach results have been compared with the LECTOR technique and observed that the proposed technique improves the performance and reduce the power dissipation.
An operational amplifier with recycling folded cascode topology and adaptive ...VLSICS Design
This paper presents a highly adaptive operational amplifier with high gain, high bandwidth, high speed
and low power consumption. By adopting the recycling folded cascode topology along with an adaptivebiasing
circuit, this design achieves high performance in terms of gain-bandwidth product (GBW) and slew
rate (SR). This single stage op-amp has been designed in 0.18μm technology with a power supply of 1.8V
and a 5pF load. The simulation results show that the amplifier achieved a GBW of 335.5MHz, Unity Gain
Bandwidth of 247.1MHz and a slew rate of 92.8V/μs.
ULTRA HIGH SPEED FACTORIAL DESIGN IN SUB-NANOMETER TECHNOLOGYcscpconf
This work proposes a high speed and low power factorial design in 22nm technology and also it counts the effect of sub nano-meter constraints on this circuit. A comparative study for this
design has been done for 90nm, 45nm and 22nm technology. The rise in circuit complexity and speed is accompanied by the scaling of MOSFET’s. The transistor saturation current Idsat is an important parameter because the transistor current determines the time needed to charge and discharge the capacitive loads on chip, and thus impacts the product speed more than any other transistor parameter. The efficient implementation of a factorial number is carried out by using
a decremented and multipliers which has been lucidly discussed in this paper. Normally in a factorial module a number is calculated as the iterative multiplication of the given number to
the decremented value of the given number. A Parallel adder based decremented has been proposed for calculating the factorial of any number that also includes 0 and 1. The
performances are calculated by using the existing 90-nm CMOS technology and scaling down the existing technology to 45-nm and 22-nm.
Performance analysis of cmos comparator and cntfet comparator designeSAT Publishing House
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology
AN ULTRA-LOW POWER ROBUST KOGGESTONE ADDER AT SUB-THRESHOLD VOLTAGES FOR IMPL...VLSICS Design
The growing demand for energy constrained applications and portable devices have created a dire need for
ultra-low power circuits. Implantable biomedical devices such as pacemakers need ultra-low power
circuits for a better battery life for uninterrupted biomedical data processing. Circuits operating in subthreshold
region minimize the energy per operation, thus providing a better platform for energy
constrained implantable biomedical devices. This paper presents 8, 16 and 32-bit ultra-low power robust
Kogge-Stone adders with improved performance. These adders operate at subthreshold supply voltages
which can be used for low power implantable bio-medical devices such as pacemakers. To improve the
performance of these adders in sub-threshold region, forward body bias technique and multi-threshold
transistors are used. The adders are designed using NCSU 45nm bulk CMOS process library and the
simulations were performed using HSPICE circuit simulator. Quantitative power-performance analysis is
performed at slow-slow (SS), typical-typical (TT) and fast-fast (FF) corners clocked at 50 KHz for
temperature ranging from 25̊C to 120̊C. For a supply voltage 0.3V, all the adders had the least PDP. Using
0.3V as the supply voltage, multi threshold voltage and forward body biasing techniques were applied to
further improve the performance of the adders. The PDP obtained using the forward body biasing
technique shows an effective improvement compared to high threshold voltage and multi threshold voltage
techniques. The forward biasing technique maintains a balance between delay reduction and increase in
average power, thus reducing the power delay product when compared to the other two techniques.
Quantum-dot Cellular Automata (QCA) is an alternative innovation to the
Complementary Metal Oxide Semiconductor (CMOS) because CMOS has scaling
limitations that lead to high leakage power. QCA is structured on quantum cells, whose
sizes are on the nanoscale. This component causes faults in QCA circuits. Converting
a code into another that is programmed in logic arrays becomes important in the
physical realization of the circuits. There are many methods to resolve this problem in
circuits. A code converter is a solution to convert one code into another. In this paper,
QCA-based “4-bit binary-to-gray” and “4-bit gray-to-binary code converters” are
suggested. The offered layout prospects to a decrease in energy expenditure and can
be utilized in many fields for shielding data from outsiders and increasing information
flexibility. We executed a relative analysis of the suggested design with present earlier
designs and turned out that the suggested layout is productive on condition that
complexity, cell count, area intake, and clocking. This paper offers a streamlined design
and layout concerning code converters depending on QCA. These structures are
designed with the QCADesigner, simulator and the simulation results are examined.
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
Electrical characterization of si nanowire GAA-TFET based on dimensions downs...IJECEIAES
This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (V T ). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.
Performance Evaluation of GaN Based Thin Film Transistor using TCAD Simulation IJECEIAES
As reported in past decades, gallium nitride as one of the most capable compound semiconductor, GaN-based high-electron mobility transistors are the focus of intense research activities in the area of high power, high-speed, and high-temperature transistors. In this paper we present a design and simulation of the GaN based thin film transistor using sentaurus TCAD for the extracting the electrical performance. The resulting GaN TFTs exhibits good electrical performance in the simulated results, including, a threshold voltage of 12-15 V, an on/off current ratio of 6.5×10 7 ~ 8.3×10 , and a subthreshold slope of 0.44V/dec. Sentaurus TCAD simulations is the tool which offers study of comprehensive behavior of semiconductor structures with ease. The simulation results of the TFT structure based on gallium nitride active channel have great prospective in the next-generation flat-panel display applications.
Performance Evaluation of GaN Based Thin Film Transistor using TCAD Simulation Yayah Zakaria
As reported in past decades, gallium nitride as one of the most capable compound semiconductor, GaN-based high-electron mobility transistors are the focus of intense research activities in the area of high power, high-speed, and high-temperature transistors. In this paper we present a design and simulation of the GaN based thin film transistor using sentaurus TCAD for
the extracting the electrical performance. The resulting GaN TFTs exhibits good electrical performance in the simulated results, including, a threshold voltage of 12-15 V, an on/off current ratio of 6.5×10 7 ~ 8.3×10 and a subthreshold slope
of 0.44V/dec. Sentaurus TCAD simulations is the tool which
offers study of comprehensive behavior of semiconductor structures with ease. The simulation results of the TFT structure based on gallium nitride active channel have great prospective in the next-generation flat-panel display applications.
LINEARITY AND ANALOG PERFORMANCE ANALYSIS OF DOUBLE GATE TUNNEL FET: EFFECT O...VLSICS Design
The linearity and analog performance of a Silicon Double Gate Tunnel Field Effect Transistor (DG-TFET) is investigated and the impact of elevated temperature on the device performance degradation has been studied. The impact on the device performance due to the rise in temperature and a gate stack (GS) architecture has also been investigated for the case of Silicon DG-MOSFET and a comparison with DGTFET is made. The parameters overning the analog performance and linearity have been studied, and high frequency simulations are carried out to determine the cut-off frequency of the device and its temperature dependence.
A Hetero-Spacer-Dielectric Double-Gate Junctionless Transistor for Enhanced ...IJEEE
In this paper, we propose a hetero-spacer- dielectric (HSP) double-gate junctionless transistor (DGJLT) with high-k spacer towards source side and low-k spacer towards drain side to enhance analog performance at high drain voltages. The characteristics are revealed through extensive device simulations and compared with other DGJLTs, formed by taking all possible combinations of low-k and high-k spacer dielectrics on both sides of gate. The proposed HSP DGJLT gives superior values of drain current (ID), transconductance (Gm), early voltage (VEA) and intrinsic gain (GmRo) compared to other DGJLTs at high drain voltages. Simulations reveal an improvement of early voltage and intrinsic gain by 45.95% and 14.83% respectively compared to conventional DGJLT having low-k spacer dielectric on both sides of gate. However, unity gain cut-off frequency (fT) of HSP DGJLT decreases by 23.49% due to its high gate capacitance.
SPICE model of drain induced barrier lowering in sub-10 nm junctionless cylin...IJECEIAES
We propose a SPICE Drain Induced Barrier Lowering (DIBL) model for sub10 nm Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs. The DIBL shows the proportionl relation to the -3 power of the channel length L g and the 2 power of silicon thickness in MOSFET having a rectangular channel, but this relation cannot be used in cylindrical channel because of the difference in channel structure. The subthreshold currents, including the tunneling current from the WKB (Wentzel-Kramers-Brillouin) approximation as well as the diffusion-drift current, are used in the model. The constant current method is used to define the threshold voltage as the gate voltage at a constant current, (2πR/L g ) 10 -7 A for channel length and channel radius R. The central potential of the JLCSG MOSFET is determined by the Poisson equation. As a result, it can be seen that the DIBL of the JLCSG MOSFET is proportional to the –2.76 power of the channel length, to the 1.76 power of the channel radius, and linearly to the oxide film thickness. At this time, we observe that the SPICE parameter, the static feedback coefficient, has a value less than 1, and this model can be used to analyze the DIBL of the JLCSG MOSFET.
An Analytical Model for Fringing Capacitance in Double gate Hetero Tunnel FET...VLSICS Design
In this paper fringe capacitance of double hetero gate Tunnel FET has been studied. The physical model for fringe capacitance is derived considering source gate overlap and gate drain non overlap. Inerface trap charge and oxide charges are also introduced under positive bias stress and hot carrier stress and their effect on fringe capacitance is also studied. The fringe capacitance is significant speed limiter in Double gate technology. The model is tested by comparing with simulation results obtained from Sentauras TCAD simulations.
Design & Performance Analysis of DG-MOSFET for Reduction of Short Channel Eff...IJERA Editor
An aggressive scaling of conventional MOSFETs channel length reduces below 100nm and gate oxide thickness below 3nm to improved performance and packaging density. Due to this scaling short channel effect (SCEs) like threshold voltage, Subthreshold slope, ON current and OFF current plays a major role in determining the performance of scaled devices. The double gate (DG) MOSFETS are electro-statically superior to a single gate (SG) MOSFET and allows for additional gate length scaling. Simulation work on both devices has been carried out and presented in paper. The comparative study had been carried out for threshold voltage (VT), Subthreshold slope (Sub VT), ION and IOFF Current. It is observed that DG MOSFET provide good control on leakage current over conventional Bulk (Single Gate) MOSFET. The VT (Threshold Voltage) is 2.7 times greater than & ION of DG MOSFET is 2.2 times smaller than the conventional Bulk (Single Gate) MOSFET.
Physical Scaling Limits of FinFET Structure: A Simulation StudyVLSICS Design
In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and Triple Gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively. To analyze the scaling limits of FinFET structure, simulations are performed using three variables: finthickness, fin-height and gate-length. From 2D simulation of DG FinFET, it is found that the gate-length (L) and fin-thickness (Tfin) ratio plays a key role while deciding the performance of the device. Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS) increase abruptly when (L/Tfin) ratio goes below 1.5. So, there will be a trade-off in between SCEs and on- current of the device since on-off current ratio is found to be high at small dimensions. From 3D simulation study on TG FinFET, It is found that both fin-thickness (Tfin) and fin-height (Hfin) can control the SCEs. However, Tfin is found to be more dominant parameter than Hfin while deciding the SCEs. DIBL and SS increase as (Leff/Tfin) ratio decreases. The (Leff/Tfin) ratio can be reduced below 1.5 unlike DG FinFET for the same SCEs. However,
as this ratio approaches to 1, the SCEs can go beyond acceptable limits for TG FinFET structure. The relative ratio of Hfin and Tfin should be maximum at a given Tfin and Leff to get maximum on-current per unit width. However, increasing Hfin degrades the fin stability and degrades SCEs.
Physical Scaling Limits of FinFET Structure: A Simulation StudyVLSICS Design
In this work an attempt has been made to analyze the scaling limits of Double Gate (DG) underlap and Triple Gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively. To analyze the scaling limits of FinFET structure, simulations are performed using three variables: finthickness, fin-height and gate-length. From 2D simulation of DG FinFET, it is found that the gate-length (L) and fin-thickness (Tfin) ratio plays a key role while deciding the performance of the device. Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS) increase abruptly when (L/Tfin) ratio goes below 1.5. So, there will be a trade-off in between SCEs and on- current of the device since on-off current ratio is found to be high at small dimensions. From 3D simulation study on TG FinFET, It is found that both fin-thickness (Tfin) and fin-height (Hfin) can control the SCEs. However, Tfin is found to be more dominant parameter than Hfin while deciding the SCEs. DIBL and SS increase as (Leff/Tfin) ratio decreases. The (Leff/Tfin) ratio can be reduced below 1.5 unlike DG FinFET for the same SCEs. However,
as this ratio approaches to 1, the SCEs can go beyond acceptable limits for TG FinFET structure. The relative ratio of Hfin and Tfin should be maximum at a given Tfin and Leff to get maximum on-current per unit width. However, increasing Hfin degrades the fin stability and degrades SCEs.
Impact of multiple channels on the Characteristics of Rectangular GAA MOSFET IJECEIAES
Square gate all around MOSFETs are a very promising device structures allowing to continue scaling due to their superior control over the short channel effects. In this work a numerical study of a square structure with single channel is compared to a structure with 4 channels in order to highlight the impact of channels number on the device’s DC parameters (drain current and threshold voltage). Our single channel rectangular GAA MOSFET showed reasonable ratio Ion/Ioff of 10 4 , while our four channels GAA MOSFET showed a value of 10 3 . In addition, a low value of drain induced barrier lowering (DIBL) of 60mV/V was obtained for our single channel GAA and a lower value of with 40mv/v has been obtained for our four channel one. Also, an extrinsic transconductance of 88ms/µm have been obtained for our four channels GAA compared to the single channel that is equal to 7ms/µm.
A proposal and simulation analysis for a novel architecture of gate-all-aroun...IJECEIAES
A proposal for a novel gate-all-around (GAA) polycrystalline silicon nanowire (poly-SiNW) field effect transistor (FET) is presented and discussed in this paper. The device architecture is based on the realization of poly-SiNW in a V-shaped cavity obtained by tetra methyl ammonium hydroxide (TMAH) etch of monocrystalline silicon (100). The device’s behavior is simulated using Silvaco commercial software, including the density of states (DOS) model described by the double exponential distribution of acceptor trap density within the gap. The electric field, potential, and free electron concentration are analyzed in different nanowire regions to investigate the device's performance. The results show good performance despite the high density of deep states in poly-SiNW. This can be explained by the strong electric field caused by the corner effect in the nanowire, which favors the ionization of the acceptor traps and increases the free electron concentration.
Performance analysis of ultrathin junctionless double gate vertical MOSFETsjournalBEEI
The main challenge in MOSFET minituarization is to form an ultra-shallow source/drain (S/D) junction with high doping concentration gradient, which requires an intricate S/D and channel engineering. Junctionless MOSFET configuration is an alternative solution for this issue as the junction and doping gradients is totally eliminated. A process simulation has been developed to investigate the impact of junctionless configuration on the double-gate vertical MOSFET. The result proves that the performance of junctionless double-gate vertical MOSFETs (JLDGVM) are superior to the conventional junctioned double-gate vertical MOSFETs (JDGVM). The results reveal that the drain current (ID) of the n-JLVDGM and p-JLVDGM could be tremendously enhanced by 57% and 60% respectively as the junctionless configuration was applied to the double-gate vertical MOSFET. In addition, junctionless devices also exhibit larger ION/IOFF ratio and smaller subthreshold slope compared to the junction devices, implying that the junctionless devices have better power consumption and faster switching capability.
Analysis of pocket double gate tunnel fet for low stand by power logic circuitsVLSICS Design
For low power circuits downscaling of MOSFET has a major issue of scaling of voltage which has ceased
after 1V. This paper highlights comparative study and analysis of pocket double gate tunnel FET
(DGTFET) with MOSFET for low standby power logic circuits. The leakage current of pocket DGTFET
and MOSFET have been studied and the analysis results shows that the pocket DGTFET gives the lower
leakage current than the MOSFET. Further a pocket DGTFET inverter circuit is design in 32 nm
technology node at VDD =0.6 V. The pocket DGTFET inverter shows the significant improvement on the
leakage power than multi-threshold CMOS (MTCMOS) inverter. The leakage power of pocket DGFET and
MTCMOS inverter are 0.116 pW and 1.83 pW respectively. It is found that, the pocket DGTFET can
replace the MOSFET for low standby power circuits.
Analysis of analog and RF behaviors in junctionless double gate vertical MOSFETjournalBEEI
The prime obstacle in continuing the transistor’s scaling is to maintain ultra-shallow source/drain (S/D) junctions with high doping concentration gradient, which definitely demands an advanced and complicated S/D and channel engineering. Junctionless transistor configuration has been found to be an alternative device structure in which the junction and doping gradients could be totally eliminated, thus simplifying the fabrication process. In this paper, a process simulation has been performed to study the impact of junctionless configuration on the analog and RF behaviors of double-gate vertical MOSFET. The result proves that the performance of n-channel junctionless double-gate vertical MOSFET (n-JLDGVM) is slightly better than the junction double-gate vertical MOSFET (n-JDGVM). Junctionless device exhibits better analog behaviors as the transconductance (gm) is increased by approximately 4%. In term of RF behaviors, the junctionless device exhibits 3.4% and 7% higher cut-off frequency (fT) and gain band-width product (GBW) respectively over the junction device.
Operational transconductance amplifier-based comparator for high frequency a...IJECEIAES
Fin field-effect transistor (FinFET) based analog circuits are gaining importance over metal oxide semiconductor field effect transistor (MOSFET) based circuits with stability and high frequency operations. Comparator that forms the sub block of most of the analog circuits is designed using operational transconductance amplifier (OTA). The OTA is designed using new design procedures and the comparator circuit is designed integrating the sub circuits with OTA. The building blocks of the comparator design such as input level shifter, differential pair with cascode stage and class AB amplifier for output swing are designed and integrated. Folded cascode circuit is used in the feedback path to maintain the common mode input value to a constant, so that the differential pair amplifies the differential signal. The gain of the comparator is achieved to be greater than 100 dB, with phase margin of 65°, common mode rejection ratio (CMRR) of above 70 dB and output swing from rail to rail. The circuit provides unity gain bandwidth of 5 GHz and is suitable for high sampling rate data converter circuits.
Accurate leakage current models for MOSFET nanoscale devices IJECEIAES
This paper underlines a closed form of MOSFET transistor’s leakage current mechanisms in the sub 100nmparadigm.The incorporation of drain induced barrier lowering (DIBL), Gate Induced Drain Lowering (GIDL) and body effect (m) on the sub-threshold leakage (I sub ) was investigated in detail. The Band-To-Band Tunneling (I BTBT ) due to the source and Drain PN reverse junction were also modeled with a close and accurate model using a rectangular approximation method (RJA). The three types of gate leakage (I G ) were also modeled and analyzed for parasitic (I GO ), inversion channel (I GC ), and gate substrate (I GB ). In addition, the leakage resources due to the aggressive reduction in the oxide thickness (<5nm) have been investigated. Simulation results using HSPICE exhibits a tremendous agreement with the BSIM4 model. The dominant value of the sub-threshold leakage was due to the DIBL and GIDL effects. Various recommendations regarding minimizing the leakage current at both device level and the circuit level were suggested at the end of this paper.
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Explore the innovative world of trenchless pipe repair with our comprehensive guide, "The Benefits and Techniques of Trenchless Pipe Repair." This document delves into the modern methods of repairing underground pipes without the need for extensive excavation, highlighting the numerous advantages and the latest techniques used in the industry.
Learn about the cost savings, reduced environmental impact, and minimal disruption associated with trenchless technology. Discover detailed explanations of popular techniques such as pipe bursting, cured-in-place pipe (CIPP) lining, and directional drilling. Understand how these methods can be applied to various types of infrastructure, from residential plumbing to large-scale municipal systems.
Ideal for homeowners, contractors, engineers, and anyone interested in modern plumbing solutions, this guide provides valuable insights into why trenchless pipe repair is becoming the preferred choice for pipe rehabilitation. Stay informed about the latest advancements and best practices in the field.
Democratizing Fuzzing at Scale by Abhishek Aryaabh.arya
Presented at NUS: Fuzzing and Software Security Summer School 2024
This keynote talks about the democratization of fuzzing at scale, highlighting the collaboration between open source communities, academia, and industry to advance the field of fuzzing. It delves into the history of fuzzing, the development of scalable fuzzing platforms, and the empowerment of community-driven research. The talk will further discuss recent advancements leveraging AI/ML and offer insights into the future evolution of the fuzzing landscape.
Water scarcity is the lack of fresh water resources to meet the standard water demand. There are two type of water scarcity. One is physical. The other is economic water scarcity.
Forklift Classes Overview by Intella PartsIntella Parts
Discover the different forklift classes and their specific applications. Learn how to choose the right forklift for your needs to ensure safety, efficiency, and compliance in your operations.
For more technical information, visit our website https://intellaparts.com
Courier management system project report.pdfKamal Acharya
It is now-a-days very important for the people to send or receive articles like imported furniture, electronic items, gifts, business goods and the like. People depend vastly on different transport systems which mostly use the manual way of receiving and delivering the articles. There is no way to track the articles till they are received and there is no way to let the customer know what happened in transit, once he booked some articles. In such a situation, we need a system which completely computerizes the cargo activities including time to time tracking of the articles sent. This need is fulfilled by Courier Management System software which is online software for the cargo management people that enables them to receive the goods from a source and send them to a required destination and track their status from time to time.
TECHNICAL TRAINING MANUAL GENERAL FAMILIARIZATION COURSEDuvanRamosGarzon1
AIRCRAFT GENERAL
The Single Aisle is the most advanced family aircraft in service today, with fly-by-wire flight controls.
The A318, A319, A320 and A321 are twin-engine subsonic medium range aircraft.
The family offers a choice of engines
Quality defects in TMT Bars, Possible causes and Potential Solutions.PrashantGoswami42
Maintaining high-quality standards in the production of TMT bars is crucial for ensuring structural integrity in construction. Addressing common defects through careful monitoring, standardized processes, and advanced technology can significantly improve the quality of TMT bars. Continuous training and adherence to quality control measures will also play a pivotal role in minimizing these defects.
Welcome to WIPAC Monthly the magazine brought to you by the LinkedIn Group Water Industry Process Automation & Control.
In this month's edition, along with this month's industry news to celebrate the 13 years since the group was created we have articles including
A case study of the used of Advanced Process Control at the Wastewater Treatment works at Lleida in Spain
A look back on an article on smart wastewater networks in order to see how the industry has measured up in the interim around the adoption of Digital Transformation in the Water Industry.
Overview of the fundamental roles in Hydropower generation and the components involved in wider Electrical Engineering.
This paper presents the design and construction of hydroelectric dams from the hydrologist’s survey of the valley before construction, all aspects and involved disciplines, fluid dynamics, structural engineering, generation and mains frequency regulation to the very transmission of power through the network in the United Kingdom.
Author: Robbie Edward Sayers
Collaborators and co editors: Charlie Sims and Connor Healey.
(C) 2024 Robbie E. Sayers