IGBT(INSULATED GATE BIPOLAR TRANSISTOR)
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This document discusses the insulated gate bipolar transistor (IGBT). It begins with an introduction to the IGBT, describing it as a combination of a bipolar junction transistor and power MOSFET that has high input impedance like a MOSFET and low on-state power loss like a BJT. The document then covers the basic structure of the IGBT, its equivalent and working circuit, static and switching characteristics, advantages and disadvantages compared to other transistors, and applications. It aims to provide an overview of the IGBT for educational purposes.
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INSULATED GATE BIPOLAR JUNCTION TRANSISTOR-IGBT
The document discusses the insulated gate bipolar transistor (IGBT). The IGBT combines the characteristics of both a bipolar junction transistor and a MOSFET. It was first proposed in 1968 and patented in 1977. The IGBT has a gate, emitter, and collector terminals. It consists of a p-type base region between an n-type drift layer and a highly doped n-type layer. When the gate voltage exceeds the threshold, an inversion layer is created allowing current flow. Under forward bias, conductivity modulation further increases conductivity for low on-state resistance. The IGBT has applications in variable speed control, switch-mode power supplies, solar inverters due to its high voltage blocking, fast switching
IGBT
The document discusses insulated gate bipolar transistors (IGBTs). It describes IGBTs as having MOSFET-like input characteristics and bipolar junction transistor-like output characteristics. The document summarizes IGBT structure, working principles, characteristics including transfer and switching characteristics, and methods of connecting IGBTs in series and parallel. It also discusses protection of IGBTs from overvoltage, overcurrent, high dv/dt, and overheating.
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An insulated-gate bipolar transistor (IGBT) is a three-terminal semiconductor device that combines high efficiency and fast switching. It consists of alternating P-N-P-N layers controlled by a metal-oxide-semiconductor (MOS) gate structure, without regenerative action. The IGBT structure is similar to a thyristor with an isolated MOS gate that completely suppresses the thyristor action. IGBTs are used in switching power supplies for applications requiring high power, such as variable frequency drives, electric vehicles, and air conditioners. The IGBT combines the simple gate drive of MOSFETs with the high-current and low-saturation-voltage capabilities of bipolar transistors.
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The document discusses the construction and operating principles of an Insulated Gate Bipolar Transistor (IGBT). It describes how the IGBT was developed from earlier power semiconductor devices like the IGT and COMFET. The IGBT cell contains a parasitic thyristor structure that must be controlled to prevent latchup. In operation, the IGBT behaves like a MOSFET for gate control and can block high voltages while supporting medium frequencies and current levels, making it suitable for replacing bipolar junction transistors in applications like motor drives and power supplies.
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The document discusses the insulated gate bipolar transistor (IGBT). The IGBT combines the characteristics of both a bipolar junction transistor and a MOSFET. It was first proposed in 1968 and patented in 1977. The IGBT has a gate, emitter, and collector terminals. It consists of a p-type base region between an n-type drift layer and a highly doped n-type layer. When the gate voltage exceeds the threshold, an inversion layer is created allowing current flow. Under forward bias, conductivity modulation further increases conductivity for low on-state resistance. The IGBT has applications in variable speed control, switch-mode power supplies, solar inverters due to its high voltage blocking, fast switching
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The document discusses insulated gate bipolar transistors (IGBTs). It describes IGBTs as having MOSFET-like input characteristics and bipolar junction transistor-like output characteristics. The document summarizes IGBT structure, working principles, characteristics including transfer and switching characteristics, and methods of connecting IGBTs in series and parallel. It also discusses protection of IGBTs from overvoltage, overcurrent, high dv/dt, and overheating.
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This document discusses the gate turn-off thyristor (GTO). It begins with an introduction explaining that a GTO is a type of thyristor that can be turned on and off through its gate terminal. The construction of a GTO is then described, including the heavily doped n+ and p+ layers. The operation involves turning on through forward gate bias and turning off by applying reverse gate bias. Applications of GTOs include AC drives, DC drives, AC power supplies, and induction heating. In comparison to regular thyristors, GTOs have faster switching but higher on-state voltage drop and require more gate current.
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An insulated-gate bipolar transistor (IGBT) is a three-terminal semiconductor device that combines high efficiency and fast switching. It consists of alternating P-N-P-N layers controlled by a metal-oxide-semiconductor (MOS) gate structure, without regenerative action. The IGBT structure is similar to a thyristor with an isolated MOS gate that completely suppresses the thyristor action. IGBTs are used in switching power supplies for applications requiring high power, such as variable frequency drives, electric vehicles, and air conditioners. The IGBT combines the simple gate drive of MOSFETs with the high-current and low-saturation-voltage capabilities of bipolar transistors.
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The document discusses the construction and operating principles of an Insulated Gate Bipolar Transistor (IGBT). It describes how the IGBT was developed from earlier power semiconductor devices like the IGT and COMFET. The IGBT cell contains a parasitic thyristor structure that must be controlled to prevent latchup. In operation, the IGBT behaves like a MOSFET for gate control and can block high voltages while supporting medium frequencies and current levels, making it suitable for replacing bipolar junction transistors in applications like motor drives and power supplies.
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This document provides an overview of Insulated Gate Bipolar Transistors (IGBTs). It describes IGBT fundamentals, including their structure, operation, and advantages over other power devices. Key points include:
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Voltage Regulation
Line Regulation
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Series Regulator
Shunt Regulator
Switching Regulator
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Bipolar Junction Transistor (BJT) DC and AC Analysis
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General Introduction to IGBT
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TYPES
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6. TYPES :-1) MONOSTABLE MULTIVAIBRATOR
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This document compares the switching characteristics of non-isolated DC-DC converters that use MOSFET and IGBT transistors. It analyzes the performance of boost, buck, and buck-boost converter configurations in terms of switching speed and efficiency. MOSFETs provide higher switching speeds than IGBTs but are less suitable for high voltage applications. The document also models and simulates the operation of each converter type using MATLAB/Simulink.
igbt and its characteristics
The document discusses the construction and operating principles of an Insulated Gate Bipolar Transistor (IGBT). It describes how the IGBT was developed from earlier power semiconductor devices like the IGT and COMFET. The IGBT cell contains a parasitic thyristor structure that must be controlled to prevent latch-up. In operation, the IGBT behaves like a MOSFET for gate control and can block high voltages like a BJT. It finds use in medium frequency, high voltage applications like motor drives and power supplies.
Industrial electronics 1 marks- polytechnic
The document discusses various power semiconductor devices and their applications. It provides definitions and explanations of silicon controlled rectifier (SCR), insulated gate bipolar transistor (IGBT), gate turn-off thyristor (GTO), metal-oxide-semiconductor field-effect transistor (MOSFET), and other related terms. Some key applications mentioned include motor drives, UPS systems, static breakers, and industrial uses. The document also covers triggering mechanisms, commutation methods, and inverters.
power electronics.pdf
This document discusses power semiconductor devices, including:
1) It provides an overview of common power semiconductor devices like diodes, bipolar transistors, thyristors, MOSFETs, and IGBTs and discusses their typical power and frequency ranges.
2) It describes the construction and operation of p-n junction diodes, including their reverse recovery characteristics and how minority carrier lifetime affects on-state voltage and turn-off losses.
3) It discusses the reverse bias behavior of p-n junction diodes and how the peak electric field is related to the avalanche voltage and reverse leakage current.
DC performance analysis of a 20nm gate length n-type Silicon GAA junctionless...
This summary provides the key details about the document in 3 sentences:
The document analyzes the DC performance of a 20nm gate length n-type silicon gate-all-around junctionless transistor using 3D quantum transport modeling. Simulation results show the device has a threshold voltage of 0.55V, subthreshold slope of 63mV/decade approaching the ideal value, an on/off current ratio of 10e+10, and a drain-induced barrier lowering of 98mV/V. Overall, the junctionless gate-all-around transistor shows improved short channel effects compared to an inversion-mode gate-all-around transistor.
Performance Analysis of Single Phase Inverter
In this paper performance of Single Phase Inverter is discussed. In this case IGBT & GTO switches are
used with Sinusoidal Pulse Width Modulation technique. First of all two models are developed using SIMULINK
toolbox of MATLAB software and SIMULATE both models. After the simulation performance of both Inverter is
compared. Finally it indicates that IGBT based Inverter is more suitable
Industrial electronics 1 marks- polytechnic
The document discusses power electronic devices such as SCR, IGBT, MOSFET and GTO. It provides definitions of key terms related to these devices such as triggering, gate triggering, latching current, and applications. Specific topics covered include:
1. SCR, IGBT, MOSFET and GTO are power semiconductor switching devices. SCR can be triggered through its gate or by increasing voltage.
2. Inverters, choppers, and UPS systems are discussed as applications that use these devices to convert power efficiently.
3. Forced and natural commutation methods are described for turning devices off in different circuit configurations.
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IGBT(INSULATED GATE BIPOLAR TRANSISTOR)
- 1. IGBT Insulated Gate Bipolar Transistor GYANMANJARI INSTITUTE OF TECHNOLOGY,BHAVNAGAR Power Electronics “Less Losses” “High Efficiency”
- 2. Presented By: Beldiya Gautam T. (161293109001) Chauhan Dharmendra A. (161293109003) Dodiya Deep D. (161293109004) Gohil Sanjay D. (161293109005) Guided By : Prof. Jimit Shukla GYANMANJARI INSTITUTE OF TECHNOLOGY,BHAVNAGAR
- 3. 1 OUTLINE 4. Static I-V characteristics and transfer characteristics of IGBT 1. Introduction About IGBT 2. Basic Structure of IGBT 3. Equivalent & Working circuit of IGBT 5. Switching characteristics 6. Advantages & Disadvantages of IGBT 7. Application of IGBT GOP-GO TO OUTLINE PAGE
- 4. 1. Introduction About IGBT Combination of BJT & PMOSFET High Input Impedance like a PMOSFET. Low on state power loss like a BJT. In IGBT second breakdown problem is not present. Voltage controlled device. Three terminal device. SOME OTHERS NAME OF IGBT: MOSIGT - metal oxide gate bipolar junction transistor COMFET - conductively modulated field effect transistor GEMFET – gate modulated field effect transistor Figure of IGBT Symbol of IGBT Collector Gate Emitter 2 GOP
- 5. 2. Basic Structure of IGBT p+ substrate n- substrate p p n+ n+ n+ n+ Metal Injection layer Drift layer Silicon dioxide Metal j1 j2 j3 Body of IGBT Gate Emitter Collector Current path Do You Know? The p+ layer is called injection layer because it inject holes in to n- layer. The thickness of n- layer determine voltage blocking capability of IGBT. 3 GOP
- 6. IGBT & PMOSFET are same in structure but main difference between in the substrate. The n+ layer substrate at the drain in PMOSFET is now substitute in the IGBT by a p+ layer substrate is called collector C. The p layer is called body of IGBT. Do You Know? IGBT was also initially called Insulated gate transistor(IGT). 4 GOP
- 7. 3. Equivalent & Working circuit of IGBT Equivalent circuit of IGBT 5 GOP
- 8. 4. Static I-V characteristics and transfer characteristics of IGBT 6 GOP
- 9. 5. Switching characteristics 7 GOP
- 10. 6. Advantages & Disadvantages of IGBT Advantages: Low on-state voltage drop. Superior on-state current density. Low driving power. Excellent forward and reverse breakdown capabilities. Disadvantages witching speed in between MOSFET and BJT. Possibility of latch-up due to internal PNPN thyristor structure. 8 GOP
- 11. 7. Application of IGBT Advantages: Low on-state voltage drop. Superior on-state current density. Low driving power. Excellent forward and reverse breakdown capabilities. Disadvantages witching speed in between MOSFET and BJT. Possibility of latch-up due to internal PNPN thyristor structure. 9 GOP
- 12. GOP
- 13. GOP