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This document provides information about IGBT (Insulated Gate Bipolar Transistor) including its construction, working, applications, and advantages. It discusses that IGBT combines features of MOSFET and BJT, allowing for high current and voltage switching. IGBT has low on-state voltage drop like MOSFET and high on-state current density, making it suitable for applications requiring high switching such as power supplies, UPS, and motor drivers. The document also notes some switching characteristics of IGBT like tailing collector current and increased turn-off loss compared to MOSFET.
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INSULATED GATE BIPOLAR JUNCTION TRANSISTOR-IGBT
The document discusses the insulated gate bipolar transistor (IGBT). The IGBT combines the characteristics of both a bipolar junction transistor and a MOSFET. It was first proposed in 1968 and patented in 1977. The IGBT has a gate, emitter, and collector terminals. It consists of a p-type base region between an n-type drift layer and a highly doped n-type layer. When the gate voltage exceeds the threshold, an inversion layer is created allowing current flow. Under forward bias, conductivity modulation further increases conductivity for low on-state resistance. The IGBT has applications in variable speed control, switch-mode power supplies, solar inverters due to its high voltage blocking, fast switching
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The document summarizes key information about IGBT (Insulated Gate Bipolar Transistor) including:
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- An IGBT is controlled by a voltage at the gate like a MOSFET but provides high current density and conduction like a BJT. It has applications in power supplies, UPS systems, motor controls, and other circuits requiring high switching.
- The group project focuses on understanding the construction, working, advantages, applications, and switching characteristics of IGBTs which are important devices in electrical and electronics systems.
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Lecture Outline
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Application Areas
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Power Electronics: is the electronics applied to conversion and control of electric power.
Prerequisites
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Control systems
Power systems
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Electric machines
Numerical simulation
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Technology advances such as electric and hybrid vehicles, laptop computers, microwave ovens, flat-panel displays, LED lighting, and hundreds of other innovations were not possible until advances in power electronics enabled their implementation.
Although no one can predict the future, it is certain that power electronics will be at the heart of fundamental energy innovations.
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This document describes various protection schemes for transformers, including differential, restricted earth fault, overcurrent, and thermal protection.
1) Differential protection compares currents entering and leaving the transformer zone to detect internal faults. It provides the best protection for internal faults.
2) Restricted earth fault protection is used to detect high-resistance winding-to-core faults not detectable by differential relays. It uses a neutral current transformer and is sensitive to internal earth faults.
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Here are the key methods for turning on a thyristor:
- Gate trigger pulse: Applying a positive voltage pulse between gate and cathode increases leakage current, initiating regenerative turn-on. This is the controlled method.
- Thermal triggering: Increasing temperature raises leakage currents, which can initiate turn-on without a gate pulse under high temperature conditions. This is an uncontrolled method.
- Light triggering: Illuminating the thyristor junctions with light generates electron-hole pairs, raising leakage currents and enabling turn-on without a gate pulse in photosensitive thyristors. Again, uncontrolled.
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IGBT Equivalent Circuit
IGBT Output Characteristics
IGBT usage as a Switch
IGBT Datasheet
IGBT Applications
IGBT Power Losses
Some FAQs about IGBTs
along with some demonstration videos from different sources
IGBTprofessionalmaganementAssistantco.pdf
The document discusses the insulated gate bipolar transistor (IGBT). It describes the IGBT as a combination of a BJT and a MOSFET, having high input impedance like a MOSFET and low on-state power loss like a BJT. The document outlines the basic structure of an IGBT, its I-V characteristics, switching characteristics, advantages over other power devices, and limitations. It also discusses the IGBT's safe operating area which defines the maximum voltage and current limits for safe operation without damage.
IRJET- Comparative Analysis of Switching Characteristics of Non-Isolated ...
This document compares the switching characteristics of non-isolated DC-DC converters that use MOSFET and IGBT transistors. It analyzes the performance of boost, buck, and buck-boost converter configurations in terms of switching speed and efficiency. MOSFETs provide higher switching speeds than IGBTs but are less suitable for high voltage applications. The document also models and simulates the operation of each converter type using MATLAB/Simulink.
TRC.ppsx
The document discusses the key components of a traction converter used in electric locomotives. It describes the evolution from older GTO and thyristor-based converters to newer IGBT-based converters. The main components of an IGBT converter include the front-end converter, intermediate DC link, inverter modules, electronic control modules like the DCU and VIU, and IGBT power modules. The power modules integrate the IGBT devices, driver circuits, and protection circuits into a single replaceable unit.
Original Power Supply IC LNK302PN LNK302P LNK302 DIP-7 New
Original Power Supply IC LNK302PN LNK302P LNK302 DIP-7 New
https://authelectronic.com/original-power-ic-lnk302pn-lnk302p-lnk302-dip-7-new
Igbt
The document discusses the insulated gate bipolar transistor (IGBT), a three-terminal power semiconductor device primarily used as an electronic switch. IGBTs combine high efficiency and fast switching. They have lower conduction losses than other devices, can block larger voltages, and have small turn-on and turn-off times. The document describes the basic IGBT structure, punch-through and non-punch-through variations, and their off-state and on-state operations. It notes applications of IGBTs include medium-power devices like motor drives, solid-state relays, and high-frequency signal choppers.
Igbt for KDU students by dasith
The document discusses the insulated gate bipolar transistor (IGBT), a three-terminal power semiconductor device primarily used as an electronic switch. IGBTs combine high efficiency and fast switching. They have lower conduction losses than other devices, can block larger voltages, and have small turn-on and turn-off times. The document describes the basic IGBT structure, punch-through and non-punch-through variations, and their off-state and on-state operations. It notes applications of IGBTs include medium-power devices like motor drives, solid-state relays, and high frequency signal choppers.
Statics switches
This document discusses various types of power semiconductor devices used as switches in power electronic systems. It describes uncontrolled switches like diodes, semi-controlled switches like thyristors (SCRs), and fully controlled switches including power transistors. For each type of switch, it provides brief details about their operating principles, characteristics, and example devices like power diodes, IGBTs, MOSFETs, GTOs. It also compares the power ratings and operating frequencies of different switch technologies.
L6561 Power Factor Corrector
The document provides an overview and introduction to the L6561 power factor corrector chip from STMicroelectronics. It describes the chip's key features, including wide input voltage range, low start-up and operating currents, precision reference voltage, and totem pole output stage. The document outlines the chip's block diagram and describes the functions of the error amplifier, overvoltage protection, zero current detection, multiplier, current comparator, and output driver blocks. It also provides examples of typical application circuits and a lighting application using power factor correction.
k10995 ashutosh yadav(control theory)
This document summarizes a paper about modeling a buck converter in Simulink without using Sim Power Systems elements. It begins with an introduction and defines a buck converter as a DC-to-DC power converter that steps down voltage while stepping up current. The document then presents the basic operation of a buck converter using two switches, typically a transistor and diode, to control current in an inductor. It also discusses efficiency factors such as conduction and switching losses. Applications mentioned include switched-mode power supplies, DC motor control, and battery chargers. In conclusion, the document states that a mathematical model is derived to accurately represent the buck converter in Simulink and allow tuning of controllers.
Ic voltage regulators
This document presents an overview of integrated circuit voltage regulators. It discusses the need for voltage regulation in circuits to maintain stable potentials. Different types of voltage regulators are described, including fixed output regulators like the 78XX and 79XX series, adjustable output regulators like the LM317, and switching regulators like the MC1723. Key parameters that define regulator performance are also outlined. The document then provides more detailed explanations of specific voltage regulator ICs, their applications, connections, and characteristics.
Industrial electronics 1 marks- polytechnic
The document discusses power electronic devices such as SCR, IGBT, MOSFET and GTO. It provides definitions of key terms related to these devices such as triggering, gate triggering, latching current, and applications. Specific topics covered include:
1. SCR, IGBT, MOSFET and GTO are power semiconductor switching devices. SCR can be triggered through its gate or by increasing voltage.
2. Inverters, choppers, and UPS systems are discussed as applications that use these devices to convert power efficiently.
3. Forced and natural commutation methods are described for turning devices off in different circuit configurations.
Industrial electronics question bank
The document discusses programmable logic controllers (PLCs) and their applications in industrial electronics. It provides definitions and explanations of key concepts such as:
1) PLCs use programmable memory to store instructions to implement logic, timing and sequencing functions to control machines and processes.
2) Relays are electrically operated switches used to control high voltage/current devices with low voltage/current control signals in PLC systems.
3) PLC programming uses ladder logic diagrams to create control programs that represent the logical functions of relay-based hardwired controllers.
Industrial electronics 1 marks- polytechnic
The document discusses various power semiconductor devices and their applications. It provides definitions and explanations of silicon controlled rectifier (SCR), insulated gate bipolar transistor (IGBT), gate turn-off thyristor (GTO), metal-oxide-semiconductor field-effect transistor (MOSFET), and other related terms. Some key applications mentioned include motor drives, UPS systems, static breakers, and industrial uses. The document also covers triggering mechanisms, commutation methods, and inverters.
Speed control of motor
This document describes a project to control the speed of an AC induction motor using a microcontroller and TRIAC. A microcontroller sends commands to a cyclo-converter which controls the frequency of the AC power supplied to the motor, thereby controlling its speed. The microcontroller activates an optocoupler connected to a TRIAC, which allows AC power to flow to the motor and rotate it when triggered. Keypad inputs are used to control the microcontroller and select different motor speeds.
l2-power semiconductor devices and charactoristics.ppt
This document provides an overview of power semiconductor devices and their characteristics. It discusses various power devices including diodes, thyristors, transistors, and their construction and operating principles. Key points covered include:
- Power diodes can conduct current in the forward bias state and block it in reverse bias, but require a recovery time when switched from on to off.
- Thyristors like SCRs can latch on in the forward conducting state and require the current to go to zero to turn off, while TRIACs are dual polarity thyristors.
- Power transistors like IGBTs, MOSFETs, and BJTs can be precisely controlled on and off but require heat sinking due
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Igbt Working
- 2. IGBT Group Name: GA-7 Group Leader: Azfar Rasool 12-EL-04 Group Members: Musa Ali M.Imran Saba Nazeer 12-EL-37 12-EL-30 11-12EL-57
- 3. IGBT (Insulated Gate Bipolar Transistor) What does word stand for….. Combination of BJT and MOSFET Lab Symbol Detailed description of symbol {[(HOW)}
- 4. Construction and Basic Structure Revert the polarities and.. Check!
- 5. Changing to simplified circuit…
- 6. Working And Operation Controlling factor: Gate Voltage Called as voltage-controlled BJT Input current zero at gate; as insulated Input is MOSFET characteristics Output is BJT characteristics Threshold Voltage
- 7. Working And Operation npnp structure Thyristor Parasitic transistor and resistence no effect under normal operation Max collector current Parasitic transistor activates Thus parasitic thyristor activates Latch up condition dominates i.e. IGBT will remain on Cannot controlled by gate voltage
- 8. How do IGBT LOOK like…. 1RGT10075M12 5EMK80N Internal Structure Made in Italy Made in China A Dissectional view of IGBT • All of the IGBT’s related to any model do have the simplified circuit drawn on it.
- 9. Importance & Advantages of IGBT in Electrical & Electronics world Combine features of MOSFET & BJT under single device High current & High voltage Switching Applications, provides safe gateway Low on state voltage drop (MOSFET part) & High on state current density; so smaller chip size & low cost manufacturing & production Low voltage drop at input gate; so easily controlled compared to thyristors & BJT’s. High density current conduction provides excellent forward & reverse blocking capabalites. It can be used in every electronic and electrical circuits where high switch repletion is need.
- 10. Applications of IGBT’s in Electrical & Electronics World Switch Mode Power Supplies (SMPS) Safe controlling to work with high voltage or high current.
- 11. Uninterruptible Power Supplies (UPS) Old UPS gives audible irritating sound IGBT use in UPS gives it high dynamic range and low noise. Ex: China company HOMAGE UPS
- 12. Pulse Width Modulation (PWM) Increase or decrease the pulse width according to requirement and desire
- 14. Switching Characteristics of IGBT’s IGBT Switching Test Time Circuit Switching Characteristics similar to Power Mosfet Difference is; tailing collector current due to stored charge in N (negative) Drift region Tail current increases turn off loss Also increase the dead time between the two devices in half-bridge circuit Operates at -15V at gate to switch off
- 15. Turn off speed limited of IGBT (How) Lifetime stored charge or minority carriers in N(-ve) drift-region Base is parasitic PNP transistor No External means to sweep the minority carriers from N(-ve) drift region To improve Switching time N(+ve) buffer layer helps
- 16. References: Powered by google images Abdus Sattar 1XYS Corporation Text book: Electronic Device and Circuits by Floyd
- 17. Thank You
- 18. Any Queries