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Igbt Working
This document provides information about IGBT (Insulated Gate Bipolar Transistor) including its construction, working, applications, and advantages. It discusses that IGBT combines features of MOSFET and BJT, allowing for high current and voltage switching. IGBT has low on-state voltage drop like MOSFET and high on-state current density, making it suitable for applications requiring high switching such as power supplies, UPS, and motor drivers. The document also notes some switching characteristics of IGBT like tailing collector current and increased turn-off loss compared to MOSFET.
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Igbt Working
- 2. IGBT Group Name: GA-7 Group Leader:Azfar Rasool 12-EL-04 Group Members: Musa Ali M.Imran Saba Nazeer 12-EL-37 12-EL-30 11-12EL-57
- 3. IGBT (Insulated Gate BipolarTransistor) What does word stand for….. Combination of BJT and MOSFET Lab Symbol Detailed description of symbol {[(HOW)}
- 4. Construction and BasicStructure Revert the polarities and.. Check!
- 5. Changing to simplifiedcircuit…
- 6. Working And Operation Controllingfactor: Gate Voltage Called as voltage-controlled BJT Input current zero at gate; as insulated Input is MOSFET characteristics Output is BJT characteristics Threshold Voltage
- 7. Working And Operation npnpstructure Thyristor Parasitic transistor and resistence no effect under normal operation Max collector current Parasitic transistor activates Thus parasitic thyristor activates Latch up condition dominates i.e. IGBT will remain on Cannot controlled by gate voltage
- 8. How do IGBTLOOK like…. 1RGT10075M12 5EMK80N Internal Structure Made in Italy Made in China A Dissectional view of IGBT • All of the IGBT’s related to any model do have the simplified circuit drawn on it.
- 9. Importance & Advantagesof IGBT in Electrical & Electronics world Combine features of MOSFET & BJT under single device High current & High voltage Switching Applications, provides safe gateway Low on state voltage drop (MOSFET part) & High on state current density; so smaller chip size & low cost manufacturing & production Low voltage drop at input gate; so easily controlled compared to thyristors & BJT’s. High density current conduction provides excellent forward & reverse blocking capabalites. It can be used in every electronic and electrical circuits where high switch repletion is need.
- 10. Applications of IGBT’sin Electrical & Electronics World Switch Mode Power Supplies (SMPS) Safe controlling to work with high voltage or high current.
- 11. Uninterruptible Power Supplies (UPS) OldUPS gives audible irritating sound IGBT use in UPS gives it high dynamic range and low noise. Ex: China company HOMAGE UPS
- 12. Pulse Width Modulation (PWM) Increaseor decrease the pulse width according to requirement and desire
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- 14. Switching Characteristics ofIGBT’s IGBT Switching Test Time Circuit Switching Characteristics similar to Power Mosfet Difference is; tailing collector current due to stored charge in N (negative) Drift region Tail current increases turn off loss Also increase the dead time between the two devices in half-bridge circuit Operates at -15V at gate to switch off
- 15. Turn offspeed limited of IGBT (How) Lifetime stored charge or minority carriers in N(-ve) drift-region Base is parasitic PNP transistor No External means to sweep the minority carriers from N(-ve) drift region To improve Switching time N(+ve) buffer layer helps
- 16. References: Powered by googleimages Abdus Sattar 1XYS Corporation Text book: Electronic Device and Circuits by Floyd
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