Igbt for KDU students by dasith
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The document discusses the insulated gate bipolar transistor (IGBT), a three-terminal power semiconductor device primarily used as an electronic switch. IGBTs combine high efficiency and fast switching. They have lower conduction losses than other devices, can block larger voltages, and have small turn-on and turn-off times. The document describes the basic IGBT structure, punch-through and non-punch-through variations, and their off-state and on-state operations. It notes applications of IGBTs include medium-power devices like motor drives, solid-state relays, and high frequency signal choppers.
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Insulated gate bipolar transistor (igbt) - basics
An insulated-gate bipolar transistor (IGBT) is a three-terminal semiconductor device that combines high efficiency and fast switching. It consists of alternating P-N-P-N layers controlled by a metal-oxide-semiconductor (MOS) gate structure, without regenerative action. The IGBT structure is similar to a thyristor with an isolated MOS gate that completely suppresses the thyristor action. IGBTs are used in switching power supplies for applications requiring high power, such as variable frequency drives, electric vehicles, and air conditioners. The IGBT combines the simple gate drive of MOSFETs with the high-current and low-saturation-voltage capabilities of bipolar transistors.
Igbt
The document discusses the insulated gate bipolar transistor (IGBT), a three-terminal power semiconductor device primarily used as an electronic switch. IGBTs combine high efficiency and fast switching. They have lower conduction losses than other devices, can block larger voltages, and have small turn-on and turn-off times. The document describes the basic IGBT structure, punch-through and non-punch-through variations, and their off-state and on-state operations. It notes applications of IGBTs include medium-power devices like motor drives, solid-state relays, and high-frequency signal choppers.
IGBT(INSULATED GATE BIPOLAR TRANSISTOR)
This document discusses the insulated gate bipolar transistor (IGBT). It begins with an introduction to the IGBT, describing it as a combination of a bipolar junction transistor and power MOSFET that has high input impedance like a MOSFET and low on-state power loss like a BJT. The document then covers the basic structure of the IGBT, its equivalent and working circuit, static and switching characteristics, advantages and disadvantages compared to other transistors, and applications. It aims to provide an overview of the IGBT for educational purposes.
INSULATED GATE BIPOLAR JUNCTION TRANSISTOR-IGBT
The document discusses the insulated gate bipolar transistor (IGBT). The IGBT combines the characteristics of both a bipolar junction transistor and a MOSFET. It was first proposed in 1968 and patented in 1977. The IGBT has a gate, emitter, and collector terminals. It consists of a p-type base region between an n-type drift layer and a highly doped n-type layer. When the gate voltage exceeds the threshold, an inversion layer is created allowing current flow. Under forward bias, conductivity modulation further increases conductivity for low on-state resistance. The IGBT has applications in variable speed control, switch-mode power supplies, solar inverters due to its high voltage blocking, fast switching
Igbt Working
This document provides information about IGBT (Insulated Gate Bipolar Transistor) including its construction, working, applications, and advantages. It discusses that IGBT combines features of MOSFET and BJT, allowing for high current and voltage switching. IGBT has low on-state voltage drop like MOSFET and high on-state current density, making it suitable for applications requiring high switching such as power supplies, UPS, and motor drivers. The document also notes some switching characteristics of IGBT like tailing collector current and increased turn-off loss compared to MOSFET.
Introduction to IGBT & its losses with videos demonstration
Contents of this presentation:
General Introduction to IGBT
IGBT Equivalent Circuit
IGBT Output Characteristics
IGBT usage as a Switch
IGBT Datasheet
IGBT Applications
IGBT Power Losses
Some FAQs about IGBTs
along with some demonstration videos from different sources
Introduction to IGBT & its losses
Contents of this presentation:
General Introduction to IGBT
IGBT Equivalent Circuit
IGBT Output Characteristics
IGBT usage as a Switch
IGBT Datasheet
IGBT Applications
IGBT Power Losses
Some FAQs about IGBTs
Transistors
This document discusses bipolar junction transistors (BJTs) and field effect transistors (FETs). It provides information on:
1. The material structure and operation regions of BJTs, including active, cutoff, and saturation regions where the transistor acts as an amplifier, open switch, and closed switch respectively.
2. Maximum ratings for the P2N2222A BJT transistor.
3. The material structure of FETs which use a gate voltage to control current flow, making them voltage-operated devices.
4. The operation regions of FETs including cutoff, ohmic/linear, and saturation regions and descriptions of each.
5. Maximum ratings for the J111
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Insulated gate bipolar transistor (igbt) - basics
An insulated-gate bipolar transistor (IGBT) is a three-terminal semiconductor device that combines high efficiency and fast switching. It consists of alternating P-N-P-N layers controlled by a metal-oxide-semiconductor (MOS) gate structure, without regenerative action. The IGBT structure is similar to a thyristor with an isolated MOS gate that completely suppresses the thyristor action. IGBTs are used in switching power supplies for applications requiring high power, such as variable frequency drives, electric vehicles, and air conditioners. The IGBT combines the simple gate drive of MOSFETs with the high-current and low-saturation-voltage capabilities of bipolar transistors.
Igbt
The document discusses the insulated gate bipolar transistor (IGBT), a three-terminal power semiconductor device primarily used as an electronic switch. IGBTs combine high efficiency and fast switching. They have lower conduction losses than other devices, can block larger voltages, and have small turn-on and turn-off times. The document describes the basic IGBT structure, punch-through and non-punch-through variations, and their off-state and on-state operations. It notes applications of IGBTs include medium-power devices like motor drives, solid-state relays, and high-frequency signal choppers.
IGBT(INSULATED GATE BIPOLAR TRANSISTOR)
This document discusses the insulated gate bipolar transistor (IGBT). It begins with an introduction to the IGBT, describing it as a combination of a bipolar junction transistor and power MOSFET that has high input impedance like a MOSFET and low on-state power loss like a BJT. The document then covers the basic structure of the IGBT, its equivalent and working circuit, static and switching characteristics, advantages and disadvantages compared to other transistors, and applications. It aims to provide an overview of the IGBT for educational purposes.
INSULATED GATE BIPOLAR JUNCTION TRANSISTOR-IGBT
The document discusses the insulated gate bipolar transistor (IGBT). The IGBT combines the characteristics of both a bipolar junction transistor and a MOSFET. It was first proposed in 1968 and patented in 1977. The IGBT has a gate, emitter, and collector terminals. It consists of a p-type base region between an n-type drift layer and a highly doped n-type layer. When the gate voltage exceeds the threshold, an inversion layer is created allowing current flow. Under forward bias, conductivity modulation further increases conductivity for low on-state resistance. The IGBT has applications in variable speed control, switch-mode power supplies, solar inverters due to its high voltage blocking, fast switching
Igbt Working
This document provides information about IGBT (Insulated Gate Bipolar Transistor) including its construction, working, applications, and advantages. It discusses that IGBT combines features of MOSFET and BJT, allowing for high current and voltage switching. IGBT has low on-state voltage drop like MOSFET and high on-state current density, making it suitable for applications requiring high switching such as power supplies, UPS, and motor drivers. The document also notes some switching characteristics of IGBT like tailing collector current and increased turn-off loss compared to MOSFET.
Introduction to IGBT & its losses with videos demonstration
Contents of this presentation:
General Introduction to IGBT
IGBT Equivalent Circuit
IGBT Output Characteristics
IGBT usage as a Switch
IGBT Datasheet
IGBT Applications
IGBT Power Losses
Some FAQs about IGBTs
along with some demonstration videos from different sources
Introduction to IGBT & its losses
Contents of this presentation:
General Introduction to IGBT
IGBT Equivalent Circuit
IGBT Output Characteristics
IGBT usage as a Switch
IGBT Datasheet
IGBT Applications
IGBT Power Losses
Some FAQs about IGBTs
Transistors
This document discusses bipolar junction transistors (BJTs) and field effect transistors (FETs). It provides information on:
1. The material structure and operation regions of BJTs, including active, cutoff, and saturation regions where the transistor acts as an amplifier, open switch, and closed switch respectively.
2. Maximum ratings for the P2N2222A BJT transistor.
3. The material structure of FETs which use a gate voltage to control current flow, making them voltage-operated devices.
4. The operation regions of FETs including cutoff, ohmic/linear, and saturation regions and descriptions of each.
5. Maximum ratings for the J111
Insulated gate bipolar transistor
Insulated Gate Bipolar Transistors (IGBTs) are power semiconductor devices that have advantages of both MOSFETs and BJTs. IGBTs have lower conduction losses than BJTs and can block higher voltages than MOSFETs. The document discusses the construction, operation, and modeling of IGBTs. It covers the multi-cell structure of IGBTs, their blocking and on-state operations, equivalent circuits, and I-V characteristics. SPICE simulation models were also developed for IGBTs.
igbt and its characteristics
The document discusses the construction and operating principles of an Insulated Gate Bipolar Transistor (IGBT). It describes how the IGBT was developed from earlier power semiconductor devices like the IGT and COMFET. The IGBT cell contains a parasitic thyristor structure that must be controlled to prevent latch-up. In operation, the IGBT behaves like a MOSFET for gate control and can block high voltages like a BJT. It finds use in medium frequency, high voltage applications like motor drives and power supplies.
BJT as a switch
The document describes using a BJT as a switching device in a circuit. The aim is to build the circuit and plot its response. The procedure involves connecting the circuit with a BJT, resistor R0 and R1, applying a 6V 500Hz square wave input with 6V offset and 12V DC supply. Running a time domain analysis shows the input is inverted at the output, with the output at 12V when the input is 0V and vice versa, demonstrating the BJT working as a switch.
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This document compares and contrasts Bipolar Junction Transistors (BJTs) and Field Effect Transistors (FETs). It discusses the basic structure and functioning of NPN and PNP BJTs, as well as common types of FETs like JFETs and MOSFETs. The key differences highlighted are that BJTs use both majority and minority charge carriers, while FETs use only majority carriers controlled by an electric field. Additionally, BJTs are current-controlled devices and FETs are voltage-controlled. The document also provides diagrams to illustrate the flow of electrons and holes in each type of transistor.
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bipolar transistors
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Transistors
Transistors are electronic devices made of semiconductor material that can act as both an insulator and conductor. They have three main parts - the emitter which emits charge carriers, the collector which collects the charge, and the base which forms two PN junctions. Transistors can function as switches by turning on when the base-emitter voltage is above 0.7V, allowing current to flow, or as amplifiers by mimicking small changes in input base current with higher amplitude output collector current.
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This document discusses power MOSFETs, including their characteristics and advantages over bipolar junction transistors. Some key points:
1) Power MOSFETs can operate at high voltages up to 1400V and high currents up to 500A, with switching frequencies ranging from 10-100kHz depending on the device.
2) Power MOSFETs use a metal-oxide-semiconductor field-effect transistor design that allows the gate voltage to fully control the channel conductance.
3) Their on-resistance can be made very low, allowing them to operate efficiently at high power levels before breakdown occurs. This makes them well-suited for applications requiring high power switching.
Bipolar Junction Transistor(BJT)
A bipolar junction transistor (BJT) is a transistor that uses both electrons and holes as charge carriers. It has two semiconductor junctions, an emitter, base, and collector. There are two types - NPN transistors have an N-type material between two P-type materials, while PNP transistors have a P-type material between two N-type materials. BJTs can be used as amplifiers to increase voltage, current, or power of a signal, or as switches to drive high-current devices by using current gain to increase collector current substantially.
Jfet
Field effect transistors operate by controlling the flow of electrons or holes through a channel using an electric field. Unlike bipolar junction transistors which are current controlled, field effect transistors are voltage controlled, requiring virtually no input current. The two main types are JFETs and MOSFETs. JFETs work by controlling the channel using the reverse bias between the gate and source, where increasing the reverse bias restricts the channel and decreasing it allows more current flow.
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Transistors ppt by behin
The document discusses transistors, including their history and evolution. It describes how the transistor was invented in 1947 and became the building block of electronics. Moore's Law, which predicted transistors would double every two years, driving down costs, is also mentioned. The key types of transistors - bipolar junction transistors and field effect transistors - are defined. Their basic construction, symbols, operation, and applications as switches and amplifiers are outlined. New developments in transistor technology like 3D transistors are also summarized.
asas IGBT
This document provides an overview of Insulated Gate Bipolar Transistors (IGBTs). It describes IGBT fundamentals, including their structure, operation, and advantages over other power devices. Key points include:
1) IGBTs combine aspects of MOSFETs and BJTs, allowing high input impedance from the MOSFET gate and high current handling from the BJT.
2) Their structure is similar to MOSFETs but includes a P+ collector layer, enabling conductivity modulation for lower voltage drops.
3) IGBTs can operate in forward or reverse blocking modes and have applications in power electronics due to their high switching speeds and efficiencies.
4) Tradeoffs
igbt-140108131951-phpapp01.pdf
The document summarizes key information about IGBT (Insulated Gate Bipolar Transistor) including:
- IGBT combines features of a MOSFET and BJT in a single device. It has high current/voltage switching capabilities.
- An IGBT is controlled by a voltage at the gate like a MOSFET but provides high current density and conduction like a BJT. It has applications in power supplies, UPS systems, motor controls, and other circuits requiring high switching.
- The group project focuses on understanding the construction, working, advantages, applications, and switching characteristics of IGBTs which are important devices in electrical and electronics systems.
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In this slides there is basic difference between BJT and Fet defined and very basic terms are used ,so any one can get more information in little bit of time. thanks
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This document discusses factors that affect the reliability of IGBT modules used in power converter designs. It outlines various failure modes related to temperature, current, voltage, mechanical stress, and faulty control strategies. It emphasizes the importance of component qualification, proper assembly techniques, and design practices to ensure sufficient protection against overvoltage, overcurrent and overtemperature conditions. These include considerations for thermal interface materials, ESD protection, short circuit behavior, lifetime estimation based on power and thermal cycling, and derating for high altitude applications.
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Transistors
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Bipolar Junction Transistor(BJT)
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Jfet
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asas IGBT
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Igbt for KDU students by dasith
- 1. IGBT Insulated Gate Bipolar Transistor N.H.D.J De Silva ENG/13/034
- 2. Introduction *Lower conduction losses *Larger blocking voltage *Small turn Off time *Small turn on time - Circuit symbol - A three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.
- 3. Basic Structure • Cell structure similar to power MOSFET cell. • P-region at collector end unique feature of IGBT compared to MOSFET. • Punch-through (PT) IGBT - N+ buffer layer present. • Non-punch-through (NPT) IGBT - N+ buffer layer absent.
- 4. Operations of IGBT 1. Off State Operation •Vgs < Vth : No inversion layer created • Depletion layer is created along J2 ,which expands asVgs increases. • In ‘NONPUNCHTHROUGH’ no buffer layer is present so large reverse voltage blocking capacity. • In ‘PUNCHTHROUGH ’ buffer layer is present shorter drift region, which lower on-state losses. But reverse voltage blocking capacity will be low.
- 5. Operations of IGBT 2. On State Operation •Vgs > Vth , Channel is shorting Body-Drain-Drift regions. • P+ inject holes, in to N+ region • Holesmoves towards body region along a random path . • Many holes will attracted by emitter metallization. • Some holes recombines with electrons.
- 6. Applications • Current rating of single IGBT can be up to 1200 volts,400Amps. • Frequency of operation:20Khz. • It is useful for mediumpower applications •Ac and DC motor drives. •Solid state relays • High frequency signal choppers
- 7. Thank You
Editor's Notes
- An IGBT is a hybrid device with qualities of both BJT and MOSFET. It has the input characteristics of a MOSFET which is high impedance and the output characteristics of a BJT which is low saturation voltage.
- This is a cross section of an IGBT. Some IGBTs, some manufactured without the N+ buffer layer, they are called non-punch through (NPT) IGBTs whereas those with this layer are called punch-through (PT) IGBTs.
- There are two main operations of an IGBT. They are off state operation and on state operation.
- It is simply a switch that is used in order to allow power flow in the On state and, to stop power flow when it is in the Off state. IGBT can change its properties to block or create an electrical path.
- It is very important to decide the correct IGBT for the correct application. IGBTs are playing a major role in semiconductor as well as electronic Industry.