This document provides an overview of Insulated Gate Bipolar Transistors (IGBTs). It describes IGBT fundamentals, including their structure, operation, and advantages over other power devices. Key points include:
1) IGBTs combine aspects of MOSFETs and BJTs, allowing high input impedance from the MOSFET gate and high current handling from the BJT.
2) Their structure is similar to MOSFETs but includes a P+ collector layer, enabling conductivity modulation for lower voltage drops.
3) IGBTs can operate in forward or reverse blocking modes and have applications in power electronics due to their high switching speeds and efficiencies.
4) Tradeoffs
The study of the basics of electronics can be studied through the link http://bit.ly/2PPv0mv
The transistor is a semiconductor device with three connections, capable of amplification in addition to rectification
A bipolar junction transistor (BJT) consists of two PN junctions formed by sandwiching either a p-type or n-type semiconductor between two opposite types. It has three sections - the emitter, base, and collector. Current flows due to both electrons and holes, making it a bipolar device. The base is lightly doped and very thin to allow charge carriers to easily move from the emitter to the collector. BJTs can be used as amplifiers because the collector current is controlled by the base current.
1)What is BJT?
2)What is the history of its invention?
3) Physical structure of BJT
4)BJT symbol
5)BJT operations
6)Application of BJT: i) As a switch & ii)As an amplifier
7)Other uses of BJT
8)BJT vs MOSFET
- The document summarizes transistor fundamentals, including the invention of the transistor, its basic construction and operation, and different transistor configurations like common-base, common-emitter, and common-collector.
- It discusses key transistor parameters like current gain (β), maximum voltage and current ratings, and biasing requirements to operate transistors in the active region.
- Simulation results are presented to demonstrate a transistor functioning as an amplifier in the common-emitter configuration.
Bipolar Junction Transistor (BJT) DC and AC AnalysisJess Rangcasajo
BJT AC and DC Analysis
This slide condenses the two ways analysis of BJT (AC and DC).
At the end of the slide, it has review question answer with answer key as providing.
This document discusses the basics of bipolar junction transistors (BJTs). It begins by explaining that BJTs and field effect transistors are the two main categories of transistors. It then discusses the first transistor developed by Bardeen and Brattain in 1947. The document explains the symbol for an NPN or PNP BJT and describes the collector, base, and emitter layers. It provides details on the fabrication process and structure of discrete and planar BJTs. Oxide and trench isolation techniques are also summarized, along with the use of double polysilicon layers to reduce transistor size.
A transistor can be used as a current source by biasing the emitter current through a resistor. Any change in the collector voltage will have little effect on the collector/load current as long as the transistor remains active and not saturated. In a common-emitter amplifier, a small signal at the base causes a corresponding change in the emitter current. This then causes an amplified change in the opposite direction at the collector through the collector resistor load, providing voltage gain.
The study of the basics of electronics can be studied through the link http://bit.ly/2PPv0mv
The transistor is a semiconductor device with three connections, capable of amplification in addition to rectification
A bipolar junction transistor (BJT) consists of two PN junctions formed by sandwiching either a p-type or n-type semiconductor between two opposite types. It has three sections - the emitter, base, and collector. Current flows due to both electrons and holes, making it a bipolar device. The base is lightly doped and very thin to allow charge carriers to easily move from the emitter to the collector. BJTs can be used as amplifiers because the collector current is controlled by the base current.
1)What is BJT?
2)What is the history of its invention?
3) Physical structure of BJT
4)BJT symbol
5)BJT operations
6)Application of BJT: i) As a switch & ii)As an amplifier
7)Other uses of BJT
8)BJT vs MOSFET
- The document summarizes transistor fundamentals, including the invention of the transistor, its basic construction and operation, and different transistor configurations like common-base, common-emitter, and common-collector.
- It discusses key transistor parameters like current gain (β), maximum voltage and current ratings, and biasing requirements to operate transistors in the active region.
- Simulation results are presented to demonstrate a transistor functioning as an amplifier in the common-emitter configuration.
Bipolar Junction Transistor (BJT) DC and AC AnalysisJess Rangcasajo
BJT AC and DC Analysis
This slide condenses the two ways analysis of BJT (AC and DC).
At the end of the slide, it has review question answer with answer key as providing.
This document discusses the basics of bipolar junction transistors (BJTs). It begins by explaining that BJTs and field effect transistors are the two main categories of transistors. It then discusses the first transistor developed by Bardeen and Brattain in 1947. The document explains the symbol for an NPN or PNP BJT and describes the collector, base, and emitter layers. It provides details on the fabrication process and structure of discrete and planar BJTs. Oxide and trench isolation techniques are also summarized, along with the use of double polysilicon layers to reduce transistor size.
A transistor can be used as a current source by biasing the emitter current through a resistor. Any change in the collector voltage will have little effect on the collector/load current as long as the transistor remains active and not saturated. In a common-emitter amplifier, a small signal at the base causes a corresponding change in the emitter current. This then causes an amplified change in the opposite direction at the collector through the collector resistor load, providing voltage gain.
Transistors have four main operating regions: reverse saturation, saturation, active, and cut off. In the saturation region, the transistor behaves like a closed switch with maximal collector and emitter currents. In the active region, the transistor performs well as an amplifier with the collector current multiplied by the base current. In the cut off region, the transistor behaves like an open switch with zero collector, emitter, and base currents. The reverse active region has the collector-base junction forward biased and base-emitter junction reverse biased.
Transistors are composed of semiconductor materials that regulate current or voltage flow and act as switches or gates in electronic circuits. There are two main types of transistors: bipolar junction transistors (BJTs) which use both holes and electrons as current carriers, and field-effect transistors (FETs) which rely on an electric field to control conductivity. Transistors allow signals to be amplified and circuits to oscillate, and they are used in applications like sensors, processors, radios, and other electronic devices. The transistor was first invented in 1947 at Bell Labs and helped usher in the digital revolution.
The given circuit is a CB amplifier.
(a) The dc operating point or Q-point is midway between cutoff and saturation points.
Cutoff point: IC = 0, VCE = 10 V
Saturation point: IC = 2 mA, VCE = 0.2 V
Q-point: IC = 1 mA, VCE = 5 V
(b) Maximum unclipped signal is the distance between Q-point and either cutoff or saturation point.
Maximum peak-to-peak signal = Saturation point - Cutoff point
= 0.2 V - 10 V = 9.8 V
(c) For no clipping, the ac signal amplitude should be less than half of the maximum
The document provides information on BJT and FET transistors. It discusses that BJTs are current controlled devices where the base current controls the collector current, while FETs are voltage controlled devices where the gate-source voltage controls the drain current. It also summarizes the different regions of operation for BJTs and JFETs, including cut-off, active, and saturation regions. Common applications of BJTs and JFETs are also covered such as voltage controlled switches and current sources.
This document provides an overview of using a bipolar junction transistor (BJT) to amplify a signal voltage source. It first discusses the general idea and large signal characteristics of a BJT. It then explains that directly applying a voltage signal to a BJT would not work for amplification. The solution is to convert the voltage signal to a current signal using a resistor. However, simply passing this current through another resistor also does not produce amplification. The key is that a BJT can amplify current due to electron-hole recombination effects within its structure. The document goes on to describe in detail how a BJT can be used in a common base amplifier configuration to successfully amplify an input signal voltage.
Bjt(common base ,emitter,collector) from university of central punjabKhawaja Shazy
The document discusses the bipolar junction transistor (BJT) and its three configurations: common base, common emitter, and common collector.
1. A BJT consists of three terminals - collector, base, and emitter - and comes in two types, npn and pnp, depending on whether it has two n-type and one p-type semiconductor or two p-type and one n-type.
2. The common base configuration has zero phase shift/angle and high input impedance and output impedance. Common emitter has 180 degree phase shift and is most commonly used due to its high current and voltage gain. Common collector is also called emitter follower and has low output imped
This document summarizes the analysis of bias for a BJT (bipolar junction transistor) circuit. It includes:
1. An overview of different BJT amplifier configurations - common emitter (CE), common base (CB), and common collector (CC).
2. A description of the bias point as the quiescent operating point in the active mode.
3. An analysis of the bias for a CE amplifier using a Thevenin equivalent circuit and equations for the base-emitter loop and collector-emitter loop to solve for collector current and CE voltage.
4. Guidelines for selecting resistor values in the bias network, including RB being greater than 10kΩ, RE being
This document provides an overview of different types of transistors, including their history, properties, and applications. It discusses bipolar junction transistors (BJT), field-effect transistors (FETs) such as junction gate field-effect transistors (JFET) and metal-oxide-semiconductor field-effect transistors (MOSFET). For each type, the document describes their basic structure and operating principles, as well as common applications. It also provides comparisons of key characteristics between different transistor types.
Bipolar junction transistor characterstics biassing and amplification, lab 9kehali Haileselassie
This document summarizes an experiment on characterizing the input and output properties of a bipolar junction transistor (BJT) and demonstrating its ability to amplify signals when biased in the active region. Key findings include:
1) Measured voltages and currents matched predicted values closely, both from hand calculations and PSPICE simulations.
2) In the active region, a small AC input signal produced a larger AC output signal, demonstrating amplification. Measured gains matched predictions from an equivalent circuit model.
3) BJT regions of interest - active, cutoff, and saturation - were explored. In the active region the BJT acts as a current source, enabling its use as a signal amplifier.
Bipolar Junction Transistors consist of three layers - an emitter, base, and collector. The document discusses the construction and operation of NPN and PNP transistors. It describes the common-base, common-emitter, and common-collector configurations. Key parameters discussed include current gain (beta), input and output characteristics, and the limits of transistor operation. BJT transistors are used as amplifiers and their performance depends on proper biasing within the active region and not exceeding maximum voltage, current, or power ratings.
THIS PPT i.e Analog Electronic Circuit (AEC) covered all the module i.e all the portion of this subject,module 1 all biasing technique of BJT And FET D.C. Analysis,stabilization technique,
Module 2 Ac analysis
Module 3 Operational Amplifier (OPAMP),Oscillator,Feedback concept
The document discusses bipolar junction transistors (BJTs). It describes the basic construction of an NPN and PNP transistor including the emitter, base, and collector regions. It explains that the base-emitter junction must be forward biased and the base-collector junction must be reverse biased for the transistor to operate properly. The document also discusses BJT biasing circuits, operating regions including cutoff, saturation, and active modes, and uses of BJTs as switches and amplifiers.
This document discusses various BJT amplifier configurations including the common-emitter amplifier, common-collector amplifier, Darlington pair, Sziklai pair, and CB amplifier. It explains the use of a capacitor and resistor in the common-emitter amplifier to provide AC grounding and stabilize the collector current. Differential amplifiers are also covered, noting their advantages of high power supply rejection and common mode noise rejection, though they have higher power consumption and require well-matched transistors. Examples and a quiz are provided.
1. The document discusses bipolar junction transistors (BJTs), including their construction, operation, and uses. BJTs are made of n-type and p-type semiconductors and have three terminals - emitter, base, and collector.
2. There are two types of BJTs - npn and pnp. BJTs operate in different regions including cutoff, saturation, linear/active, and breakdown. Key equations relate currents and voltages at the terminals.
3. BJTs are used for amplification, switching, and detecting light. They can be configured in common-emitter, common-base, or common-collector circuits and operated in classes A or B for
Transistors are semiconductor devices that can amplify or switch electronic signals and electrical power. The transistor was invented in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley at Bell Labs. There are two main types of transistors: NPN and PNP. In an NPN transistor, electrons flow from the emitter to the collector, while in a PNP transistor, holes flow from the emitter to the collector. The base terminal controls the flow of current through the collector and emitter.
The document discusses the insulated gate bipolar transistor (IGBT). It describes the IGBT as a combination of a BJT and a MOSFET, having high input impedance like a MOSFET and low on-state power loss like a BJT. The document outlines the basic structure of an IGBT, its I-V characteristics, switching characteristics, advantages over other power devices, and limitations. It also discusses the IGBT's safe operating area which defines the maximum voltage and current limits for safe operation without damage.
The document discusses the insulated gate bipolar transistor (IGBT). The IGBT combines the characteristics of both a bipolar junction transistor and a MOSFET. It was first proposed in 1968 and patented in 1977. The IGBT has a gate, emitter, and collector terminals. It consists of a p-type base region between an n-type drift layer and a highly doped n-type layer. When the gate voltage exceeds the threshold, an inversion layer is created allowing current flow. Under forward bias, conductivity modulation further increases conductivity for low on-state resistance. The IGBT has applications in variable speed control, switch-mode power supplies, solar inverters due to its high voltage blocking, fast switching
The document discusses the construction and operating principles of an Insulated Gate Bipolar Transistor (IGBT). It describes how the IGBT was developed from earlier power semiconductor devices like the IGT and COMFET. The IGBT cell contains a parasitic thyristor structure that must be controlled to prevent latch-up. In operation, the IGBT behaves like a MOSFET for gate control and can block high voltages like a BJT. It finds use in medium frequency, high voltage applications like motor drives and power supplies.
Transistors have four main operating regions: reverse saturation, saturation, active, and cut off. In the saturation region, the transistor behaves like a closed switch with maximal collector and emitter currents. In the active region, the transistor performs well as an amplifier with the collector current multiplied by the base current. In the cut off region, the transistor behaves like an open switch with zero collector, emitter, and base currents. The reverse active region has the collector-base junction forward biased and base-emitter junction reverse biased.
Transistors are composed of semiconductor materials that regulate current or voltage flow and act as switches or gates in electronic circuits. There are two main types of transistors: bipolar junction transistors (BJTs) which use both holes and electrons as current carriers, and field-effect transistors (FETs) which rely on an electric field to control conductivity. Transistors allow signals to be amplified and circuits to oscillate, and they are used in applications like sensors, processors, radios, and other electronic devices. The transistor was first invented in 1947 at Bell Labs and helped usher in the digital revolution.
The given circuit is a CB amplifier.
(a) The dc operating point or Q-point is midway between cutoff and saturation points.
Cutoff point: IC = 0, VCE = 10 V
Saturation point: IC = 2 mA, VCE = 0.2 V
Q-point: IC = 1 mA, VCE = 5 V
(b) Maximum unclipped signal is the distance between Q-point and either cutoff or saturation point.
Maximum peak-to-peak signal = Saturation point - Cutoff point
= 0.2 V - 10 V = 9.8 V
(c) For no clipping, the ac signal amplitude should be less than half of the maximum
The document provides information on BJT and FET transistors. It discusses that BJTs are current controlled devices where the base current controls the collector current, while FETs are voltage controlled devices where the gate-source voltage controls the drain current. It also summarizes the different regions of operation for BJTs and JFETs, including cut-off, active, and saturation regions. Common applications of BJTs and JFETs are also covered such as voltage controlled switches and current sources.
This document provides an overview of using a bipolar junction transistor (BJT) to amplify a signal voltage source. It first discusses the general idea and large signal characteristics of a BJT. It then explains that directly applying a voltage signal to a BJT would not work for amplification. The solution is to convert the voltage signal to a current signal using a resistor. However, simply passing this current through another resistor also does not produce amplification. The key is that a BJT can amplify current due to electron-hole recombination effects within its structure. The document goes on to describe in detail how a BJT can be used in a common base amplifier configuration to successfully amplify an input signal voltage.
Bjt(common base ,emitter,collector) from university of central punjabKhawaja Shazy
The document discusses the bipolar junction transistor (BJT) and its three configurations: common base, common emitter, and common collector.
1. A BJT consists of three terminals - collector, base, and emitter - and comes in two types, npn and pnp, depending on whether it has two n-type and one p-type semiconductor or two p-type and one n-type.
2. The common base configuration has zero phase shift/angle and high input impedance and output impedance. Common emitter has 180 degree phase shift and is most commonly used due to its high current and voltage gain. Common collector is also called emitter follower and has low output imped
This document summarizes the analysis of bias for a BJT (bipolar junction transistor) circuit. It includes:
1. An overview of different BJT amplifier configurations - common emitter (CE), common base (CB), and common collector (CC).
2. A description of the bias point as the quiescent operating point in the active mode.
3. An analysis of the bias for a CE amplifier using a Thevenin equivalent circuit and equations for the base-emitter loop and collector-emitter loop to solve for collector current and CE voltage.
4. Guidelines for selecting resistor values in the bias network, including RB being greater than 10kΩ, RE being
This document provides an overview of different types of transistors, including their history, properties, and applications. It discusses bipolar junction transistors (BJT), field-effect transistors (FETs) such as junction gate field-effect transistors (JFET) and metal-oxide-semiconductor field-effect transistors (MOSFET). For each type, the document describes their basic structure and operating principles, as well as common applications. It also provides comparisons of key characteristics between different transistor types.
Bipolar junction transistor characterstics biassing and amplification, lab 9kehali Haileselassie
This document summarizes an experiment on characterizing the input and output properties of a bipolar junction transistor (BJT) and demonstrating its ability to amplify signals when biased in the active region. Key findings include:
1) Measured voltages and currents matched predicted values closely, both from hand calculations and PSPICE simulations.
2) In the active region, a small AC input signal produced a larger AC output signal, demonstrating amplification. Measured gains matched predictions from an equivalent circuit model.
3) BJT regions of interest - active, cutoff, and saturation - were explored. In the active region the BJT acts as a current source, enabling its use as a signal amplifier.
Bipolar Junction Transistors consist of three layers - an emitter, base, and collector. The document discusses the construction and operation of NPN and PNP transistors. It describes the common-base, common-emitter, and common-collector configurations. Key parameters discussed include current gain (beta), input and output characteristics, and the limits of transistor operation. BJT transistors are used as amplifiers and their performance depends on proper biasing within the active region and not exceeding maximum voltage, current, or power ratings.
THIS PPT i.e Analog Electronic Circuit (AEC) covered all the module i.e all the portion of this subject,module 1 all biasing technique of BJT And FET D.C. Analysis,stabilization technique,
Module 2 Ac analysis
Module 3 Operational Amplifier (OPAMP),Oscillator,Feedback concept
The document discusses bipolar junction transistors (BJTs). It describes the basic construction of an NPN and PNP transistor including the emitter, base, and collector regions. It explains that the base-emitter junction must be forward biased and the base-collector junction must be reverse biased for the transistor to operate properly. The document also discusses BJT biasing circuits, operating regions including cutoff, saturation, and active modes, and uses of BJTs as switches and amplifiers.
This document discusses various BJT amplifier configurations including the common-emitter amplifier, common-collector amplifier, Darlington pair, Sziklai pair, and CB amplifier. It explains the use of a capacitor and resistor in the common-emitter amplifier to provide AC grounding and stabilize the collector current. Differential amplifiers are also covered, noting their advantages of high power supply rejection and common mode noise rejection, though they have higher power consumption and require well-matched transistors. Examples and a quiz are provided.
1. The document discusses bipolar junction transistors (BJTs), including their construction, operation, and uses. BJTs are made of n-type and p-type semiconductors and have three terminals - emitter, base, and collector.
2. There are two types of BJTs - npn and pnp. BJTs operate in different regions including cutoff, saturation, linear/active, and breakdown. Key equations relate currents and voltages at the terminals.
3. BJTs are used for amplification, switching, and detecting light. They can be configured in common-emitter, common-base, or common-collector circuits and operated in classes A or B for
Transistors are semiconductor devices that can amplify or switch electronic signals and electrical power. The transistor was invented in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley at Bell Labs. There are two main types of transistors: NPN and PNP. In an NPN transistor, electrons flow from the emitter to the collector, while in a PNP transistor, holes flow from the emitter to the collector. The base terminal controls the flow of current through the collector and emitter.
The document discusses the insulated gate bipolar transistor (IGBT). It describes the IGBT as a combination of a BJT and a MOSFET, having high input impedance like a MOSFET and low on-state power loss like a BJT. The document outlines the basic structure of an IGBT, its I-V characteristics, switching characteristics, advantages over other power devices, and limitations. It also discusses the IGBT's safe operating area which defines the maximum voltage and current limits for safe operation without damage.
The document discusses the insulated gate bipolar transistor (IGBT). The IGBT combines the characteristics of both a bipolar junction transistor and a MOSFET. It was first proposed in 1968 and patented in 1977. The IGBT has a gate, emitter, and collector terminals. It consists of a p-type base region between an n-type drift layer and a highly doped n-type layer. When the gate voltage exceeds the threshold, an inversion layer is created allowing current flow. Under forward bias, conductivity modulation further increases conductivity for low on-state resistance. The IGBT has applications in variable speed control, switch-mode power supplies, solar inverters due to its high voltage blocking, fast switching
The document discusses the construction and operating principles of an Insulated Gate Bipolar Transistor (IGBT). It describes how the IGBT was developed from earlier power semiconductor devices like the IGT and COMFET. The IGBT cell contains a parasitic thyristor structure that must be controlled to prevent latch-up. In operation, the IGBT behaves like a MOSFET for gate control and can block high voltages like a BJT. It finds use in medium frequency, high voltage applications like motor drives and power supplies.
The document discusses the construction and operating principles of an Insulated Gate Bipolar Transistor (IGBT). It describes how the IGBT was developed from earlier power semiconductor devices like the IGT and COMFET. The IGBT cell contains a parasitic thyristor structure that must be controlled to prevent latchup. In operation, the IGBT behaves like a MOSFET for gate control and can block high voltages while supporting medium frequencies and current levels, making it suitable for replacing bipolar junction transistors in applications like motor drives and power supplies.
The IGBT is a semiconductor device that combines the characteristics of both a MOSFET and a BJT. It has high input impedance like a MOSFET but is able to handle high voltages and currents like a BJT. The IGBT has three terminals - a gate, collector, and emitter. It is turned on by applying a positive voltage above the threshold at the gate and turned off by removing this voltage. IGBTs are widely used in applications that require high power switching such as motor drives, power supplies, and solar inverters.
The document summarizes key information about IGBT (Insulated Gate Bipolar Transistor) including:
- IGBT combines features of a MOSFET and BJT in a single device. It has high current/voltage switching capabilities.
- An IGBT is controlled by a voltage at the gate like a MOSFET but provides high current density and conduction like a BJT. It has applications in power supplies, UPS systems, motor controls, and other circuits requiring high switching.
- The group project focuses on understanding the construction, working, advantages, applications, and switching characteristics of IGBTs which are important devices in electrical and electronics systems.
This document provides information about IGBT (Insulated Gate Bipolar Transistor) including its construction, working, applications, and advantages. It discusses that IGBT combines features of MOSFET and BJT, allowing for high current and voltage switching. IGBT has low on-state voltage drop like MOSFET and high on-state current density, making it suitable for applications requiring high switching such as power supplies, UPS, and motor drivers. The document also notes some switching characteristics of IGBT like tailing collector current and increased turn-off loss compared to MOSFET.
edcThe valence band is simply the outermost electron orbital of an atom of any specific material that electrons actually occupy
The conduction band is the band of electron orbitals that electrons can jump up into from the valence band when excited. When the electrons are in these orbitals, they have enough energy to move freely in the material
The energy difference between the highest occupied energy state of the valence band and the lowest unoccupied state of the conduction band is called the band gap
THIS ANALOG ELECTRONICS CIRCUIT PPT COVER ALL PORTION OF THIS SUBJECT.MODULE 1 DC ANALYSIS OF BJT AND FET ,D.C LOAD LINE,STABILIZATION TECHNIQUE
MODULE-2 AC ANALYSIS OF BJT
MODULE-3 OPERATIONAL AMPLIFIER,FEEDBACK TOPOLOGY,OSCILLATOR
The document discusses IGBT (Insulated Gate Bipolar Transistor), a three-terminal semiconductor switching device used for fast switching with high efficiency. It has three terminals - collector, emitter, and gate. The gate terminal is insulated from the semiconductor layers. IGBT is constructed of four layered semiconductors sandwiched together. IGBT characteristics include initially blocking current flow until the gate voltage exceeds the threshold voltage, after which collector current increases with gate voltage. The output characteristics also have three stages - cutoff, small leakage current, and active regions depending on the gate voltage. IGBT is mainly used in power applications due to advantages over BJTs and MOSFETs like lower on-res
The document discusses various topics related to analog electronics including:
1. Transistor biasing methods such as base resistor, collector to base, fixed bias, and voltage divider bias.
2. Amplifier configurations including common base, common emitter, and common collector. Characteristics of the common emitter configuration are also discussed.
3. IC biasing using current sources and current mirrors. Basic gain cell and cascode amplifiers are introduced.
Study of Transistor Characteristics in Common Emitter Amplifier.pdfMHSyam1
1. The document describes an experiment to study the characteristics of a bipolar junction transistor (BJT) operating in common emitter configuration as an amplifier.
2. Key aspects of the experiment include obtaining the input characteristics by varying the base-emitter voltage at constant collector-emitter voltages and measuring the base current, and obtaining the output characteristics by varying the collector voltage at constant base currents and measuring the collector current.
3. The results are presented in tables showing voltages, currents, and calculations to determine characteristics, along with graphs plotting the input and output characteristics. Simulated data and graphs are also provided for comparison with experimental measurements.
This document describes the design of an automatic night lamp using a logic circuit. It includes an introduction describing the purpose and advantages of the system. It then provides a 3 sentence summary of each main section: principles, block diagram, circuit diagram, component descriptions, components used, practical implementation, working, uses, conclusions and applications, and bibliography. The system uses a light dependent resistor and transistors to automatically turn the lamp on when it gets dark and off when it is light outside. It can reduce energy consumption and errors from manual operation.
The document discusses the construction and operation of bipolar junction transistors (BJTs). It describes how BJTs are constructed of doped semiconductor material with emitter, base, and collector regions. The base is located between the emitter and collector. In an NPN transistor, the base-emitter junction is forward biased, allowing electrons to inject into the base. These electrons diffuse through the base toward the reverse-biased collector-base junction and are swept into the collector. The document discusses various BJT configurations and modes of operation including common base, common emitter, and common collector. It provides details on input and output characteristics for the common base configuration.
The document discusses bipolar junction transistors (BJTs) including their construction, working principle, and different configurations. It provides details on:
- How a BJT is constructed of doped semiconductor material and operates by charge flow due to diffusion across junctions between regions of different charge concentrations.
- The common base (CB), common emitter (CE), and common collector (CC) configurations, explaining how each has different input/output characteristics, current and voltage gains.
- The CE configuration is most commonly used as it provides the highest current and power gain. It inverts the input signal phase.
- Parameters like alpha (α), beta (β), and their relationship which defines the current gain
Phase locked loop control of 50-150 KHz Half Bridge Resonant type Inverter fo...IJERA Editor
A half-bridge resonant-type IGBT inverter suitablefor heating magnetic and nonmagnetic materials at highfrequencyis described. A series-parallel arrangement of capacitorsis adopted and an optimum mode of operation is proposed.In this mode, the inverter is operated at unity power factorby PLL control irrespective of load variations, with maximumcurrent gain, maximum overall system efficiency, and practicallyno voltage spikes in the devices at turn-off.The actual performance was tested on a 50-150 kHz prototyperated at 6 kW. The low-cost developed hybrid inverter is characterizedby its simplicity of design and operation, yet is versatilein performance. A simplified analysis and detailed experimentalresults are presented.
This document discusses power semiconductor devices, including:
1) It provides an overview of common power semiconductor devices like diodes, bipolar transistors, thyristors, MOSFETs, and IGBTs and discusses their typical power and frequency ranges.
2) It describes the construction and operation of p-n junction diodes, including their reverse recovery characteristics and how minority carrier lifetime affects on-state voltage and turn-off losses.
3) It discusses the reverse bias behavior of p-n junction diodes and how the peak electric field is related to the avalanche voltage and reverse leakage current.
This document describes an experiment to compare the performance of an IGBT and a GTO. The objectives are to characterize the IGBT's collector characteristics and compare the static and dynamic characteristics of the GTO. The equipment required includes an IGBT/MOSFET module, GTO module, meters and wires. Circuit diagrams are provided for measuring the I-V characteristics of the IGBT and performance of the GTO. Procedures describe taking measurements of collector current and voltage for the IGBT and anode current for the GTO under different gate voltages and currents. Observation tables will record the experimental results which will then be used to plot static characteristics of the devices and compare their performance.
Harnessing WebAssembly for Real-time Stateless Streaming PipelinesChristina Lin
Traditionally, dealing with real-time data pipelines has involved significant overhead, even for straightforward tasks like data transformation or masking. However, in this talk, we’ll venture into the dynamic realm of WebAssembly (WASM) and discover how it can revolutionize the creation of stateless streaming pipelines within a Kafka (Redpanda) broker. These pipelines are adept at managing low-latency, high-data-volume scenarios.
ACEP Magazine edition 4th launched on 05.06.2024Rahul
This document provides information about the third edition of the magazine "Sthapatya" published by the Association of Civil Engineers (Practicing) Aurangabad. It includes messages from current and past presidents of ACEP, memories and photos from past ACEP events, information on life time achievement awards given by ACEP, and a technical article on concrete maintenance, repairs and strengthening. The document highlights activities of ACEP and provides a technical educational article for members.
A SYSTEMATIC RISK ASSESSMENT APPROACH FOR SECURING THE SMART IRRIGATION SYSTEMSIJNSA Journal
The smart irrigation system represents an innovative approach to optimize water usage in agricultural and landscaping practices. The integration of cutting-edge technologies, including sensors, actuators, and data analysis, empowers this system to provide accurate monitoring and control of irrigation processes by leveraging real-time environmental conditions. The main objective of a smart irrigation system is to optimize water efficiency, minimize expenses, and foster the adoption of sustainable water management methods. This paper conducts a systematic risk assessment by exploring the key components/assets and their functionalities in the smart irrigation system. The crucial role of sensors in gathering data on soil moisture, weather patterns, and plant well-being is emphasized in this system. These sensors enable intelligent decision-making in irrigation scheduling and water distribution, leading to enhanced water efficiency and sustainable water management practices. Actuators enable automated control of irrigation devices, ensuring precise and targeted water delivery to plants. Additionally, the paper addresses the potential threat and vulnerabilities associated with smart irrigation systems. It discusses limitations of the system, such as power constraints and computational capabilities, and calculates the potential security risks. The paper suggests possible risk treatment methods for effective secure system operation. In conclusion, the paper emphasizes the significant benefits of implementing smart irrigation systems, including improved water conservation, increased crop yield, and reduced environmental impact. Additionally, based on the security analysis conducted, the paper recommends the implementation of countermeasures and security approaches to address vulnerabilities and ensure the integrity and reliability of the system. By incorporating these measures, smart irrigation technology can revolutionize water management practices in agriculture, promoting sustainability, resource efficiency, and safeguarding against potential security threats.
International Conference on NLP, Artificial Intelligence, Machine Learning an...gerogepatton
International Conference on NLP, Artificial Intelligence, Machine Learning and Applications (NLAIM 2024) offers a premier global platform for exchanging insights and findings in the theory, methodology, and applications of NLP, Artificial Intelligence, Machine Learning, and their applications. The conference seeks substantial contributions across all key domains of NLP, Artificial Intelligence, Machine Learning, and their practical applications, aiming to foster both theoretical advancements and real-world implementations. With a focus on facilitating collaboration between researchers and practitioners from academia and industry, the conference serves as a nexus for sharing the latest developments in the field.
Literature Review Basics and Understanding Reference Management.pptxDr Ramhari Poudyal
Three-day training on academic research focuses on analytical tools at United Technical College, supported by the University Grant Commission, Nepal. 24-26 May 2024
6th International Conference on Machine Learning & Applications (CMLA 2024)ClaraZara1
6th International Conference on Machine Learning & Applications (CMLA 2024) will provide an excellent international forum for sharing knowledge and results in theory, methodology and applications of on Machine Learning & Applications.
CHINA’S GEO-ECONOMIC OUTREACH IN CENTRAL ASIAN COUNTRIES AND FUTURE PROSPECTjpsjournal1
The rivalry between prominent international actors for dominance over Central Asia's hydrocarbon
reserves and the ancient silk trade route, along with China's diplomatic endeavours in the area, has been
referred to as the "New Great Game." This research centres on the power struggle, considering
geopolitical, geostrategic, and geoeconomic variables. Topics including trade, political hegemony, oil
politics, and conventional and nontraditional security are all explored and explained by the researcher.
Using Mackinder's Heartland, Spykman Rimland, and Hegemonic Stability theories, examines China's role
in Central Asia. This study adheres to the empirical epistemological method and has taken care of
objectivity. This study analyze primary and secondary research documents critically to elaborate role of
china’s geo economic outreach in central Asian countries and its future prospect. China is thriving in trade,
pipeline politics, and winning states, according to this study, thanks to important instruments like the
Shanghai Cooperation Organisation and the Belt and Road Economic Initiative. According to this study,
China is seeing significant success in commerce, pipeline politics, and gaining influence on other
governments. This success may be attributed to the effective utilisation of key tools such as the Shanghai
Cooperation Organisation and the Belt and Road Economic Initiative.
CHINA’S GEO-ECONOMIC OUTREACH IN CENTRAL ASIAN COUNTRIES AND FUTURE PROSPECT
asas IGBT
1. Insulated Gate Bipolar Transistor (IGBT) Basics
Abdus Sattar, IXYS Corporation 1
IXAN0063
This application note describes the basic characteristics and operating performance
of IGBTs. It is intended to give the reader a thorough background on the device
technology behind IXYS IGBTs.
IGBT Fundamentals
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with
high input impedance and large bipolar current-carrying capability. Many designers view
IGBT as a device with MOS input characteristics and bipolar output characteristic that is
a voltage-controlled bipolar device. To make use of the advantages of both Power
MOSFET and BJT, the IGBT has been introduced. It’s a functional integration of Power
MOSFET and BJT devices in monolithic form. It combines the best attributes of both to
achieve optimal device characteristics [2].
The IGBT is suitable for many applications in power electronics, especially in Pulse
Width Modulated (PWM) servo and three-phase drives requiring high dynamic range
control and low noise. It also can be used in Uninterruptible Power Supplies (UPS),
Switched-Mode Power Supplies (SMPS), and other power circuits requiring high switch
repetition rates. IGBT improves dynamic performance and efficiency and reduced the
level of audible noise. It is equally suitable in resonant-mode converter circuits.
Optimized IGBT is available for both low conduction loss and low switching loss.
The main advantages of IGBT over a Power MOSFET and a BJT are:
1. It has a very low on-state voltage drop due to conductivity modulation and has
superior on-state current density. So smaller chip size is possible and the cost
can be reduced.
2. Low driving power and a simple drive circuit due to the input MOS gate
structure. It canbe easily controlled as compared to current controlled devices
(thyristor, BJT) in high voltage and high current applications.
3. Wide SOA. It has superior current conduction capability compared with the
bipolar transistor. It also has excellent forward and reverse blocking
capabilities.
The main drawbacks are:
1. Switching speed is inferior to that of a Power MOSFET and superior to that of
a BJT. The collector current tailing due to the minority carrier causes the turn-
off speed to be slow.
2. There is a possibility of latchup due to the internal PNPN thyristor structure.
The IGBT is suitable for scaling up the blocking voltage capability. In case of Power
MOSFET, the on-resistance increases sharply with the breakdown voltage due to an
increase in the resistively and thickness of the drift region required to support the high
operating voltage. For this reason, the development of high current Power MOSFET with
2. Insulated Gate Bipolar Transistor (IGBT) Basics
Abdus Sattar, IXYS Corporation 2
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high-blocking voltage rating is normally avoided. In contrast, for the IGBT, the drift
region resistance is drastically reduced by the high concentration of injected minority
carriers during on-state current conduction. The forward drop from the drift region
becomes dependent upon its thickness and independent of its original resistivity.
Basic Structure
The basic schematic of a typical N-channel IGBT based upon the DMOS process
is shown in Figure 1. This is one of several structures possible for this device. It is
evident that the silicon cross-section of an IGBT is almost identical to that of a vertical
Power MOSFET except for the P+
injecting layer. It shares similar MOS gate structure
and P wells with N+
source regions. The N+
layer at the top is the source or emitter and
the P+
layer at the bottom is the drain or collector. It is also feasible to make P-channel
IGBTs and for which the doping profile in each layer will be reversed. IGBT has a
parasitic thyristor comprising the four-layer NPNP structure. Turn-on of this thyristor is
undesirable.
Figure 1: Schematic view of a generic N-channel IGBT [2]
Some IGBTs, manufactured without the N+
buffer layer, are called non-punch through
(NPT) IGBTs whereas those with this layer are called punch-through (PT) IGBTs. The
presence of this buffer layer can significantly improve the performance of the device if
the doping level and thickness of this layer are chosen appropriately. Despite physical
similarities, the operation of an IGBT is closer to that of a power BJT than a power
MOSFET. It is due to the P+
drain layer (injecting layer) which is responsible for the
minority carrier injection into the N-
-drift region and the resulting conductivity
modulation.
3. Insulated Gate Bipolar Transistor (IGBT) Basics
Abdus Sattar, IXYS Corporation 3
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Figure 2: Equivalent circuit model of an IGBT [2]
Based on the structure, a simple equivalent circuit model of an IGBT can be drawn as
shown in Figure 2. It contains MOSFET, JFET, NPN and PNP transistors. The collector
of the PNP is connected to the base of the NPN and the collector of the NPN is connected
to the base of the PNP through the JFET. The NPN and PNP transistors represent the
parasitic thyristor which constitutes a regenerative feedback loop. The resistor RB
represents the shorting of the base-emitter of the NPN transistor to ensure that the
thyristor does not latch up, which will lead to the IGBT latchup. The JFET represents the
constriction of current between any two neighboring IGBT cells. It supports most of the
voltage and allows the MOSFET to be a low voltage type and consequently have a low
RDS(on) value. A circuit symbol for the IGBT is shown in Figure 3. It has three terminals
called Collector (C), Gate (G) and Emitter (E).
Figure 3: IGBT Circuit Symbol
IXYS has developed both NPT and PT IGBTs. The physical constructions for both of
them are shown in Figure 4. As mentioned earlier, the PT structure has an extra buffer
layer which performs two main functions: (i) avoids failure by punch-through action
because the depletion region expansion at applied high voltage is restricted by this layer,
(ii) reduces the tail current during turn-off and shortens the fall time of the IGBT because
the holes are injected by the P+
collector partially recombine in this layer. The NPT
4. Insulated Gate Bipolar Transistor (IGBT) Basics
Abdus Sattar, IXYS Corporation 4
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IGBTs, which have equal forward and reverse breakdown voltage, are suitable for AC
applications. The PT IGBTs, which have less reverse breakdown voltage than the forward
breakdown voltage, are applicable for DC circuits where devices are not required to
support voltage in the reverse direction.
Figure 4: Structure (a) NPT-IGBT and (b) PT-IGBT [2]
Table 1: Characteristics Comparison of NPT and PT IGBTs:
NPT PT
Switching Loss Medium
Long, low amplitude tail current.
Moderate increase in Eoff with
temperature
Low
Short tail current
Significant increase in Eoff
with temperature
Conduction Loss Medium
Increases with temperature
Low
Flat to slight decrease with
temperature
Paralleling Easy
Optional sorting
Recommend share heat
Difficult
Must sort on VCE(on)
Short-Circuit Rated Yes Limited
High gain
5. Insulated Gate Bipolar Transistor (IGBT) Basics
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Operation Modes
Forward-Blocking and Conduction Modes
When a positive voltage is applied across the collector-to-emitter terminal with
gate shorted to emitter shown in Figure 1, the device enters into forward blocking mode
with junctions J1 and J3 are forward-biased and junction J2 is reverse-biased. A depletion
layer extends on both-sides of junction J2 partly into P-base and N-drift region.
An IGBT in the forward-blocking state can be transferred to the forward conducting state
by removing the gate-emitter shorting and applying a positive voltage of sufficient level
to invert the Si below gate in the P base region. This forms a conducting channel which
connects the N+
emitter to the N-
-drift region. Through this channel, electrons are
transported from the N+
emitter to the N-
-drift. This flow of electrons into the N-
-drift
lowers the potential of the N-
-drift region whereby the P+
collector/ N-
-drift becomes
forward-biased. Under this forward-biased condition, a high density of minority carrier
holes is injected into the N-
-drift from the P+
collector. When the injected carrier
concentration is very much larger the background concentration, a condition defined as a
plasma of holes builds up in the N-
-drift region. This plasma of holes attracts electrons
from the emitter contact to maintain local charge neutrality. In this manner,
approximately equal excess concentrations of holes and electrons are gathered in the N-
-
drift region. This excess electron and hole concentrations drastically enhance the
conductivity of N-
-drift region. This mechanism in rise in conductivity is referred to as
the conductivity modulation of the N-
-drift region.
Reverse-Blocking Mode
When a negative voltage is applied across the collector-to-emitter terminal shown
in Figure 1, the junction J1 becomes reverse-biased and its depletion layer extends into
the N-
-drift region. The break down voltage during the reverse-blocking is determined by
an open-base BJT formed by the P+
collector/ N-
-drift/P-base regions. The device is prone
to punch-through if the N-
-drift region is very lightly-doped. The desired reverse voltage
capability can be obtained by optimizing the resistivity and thickness of the N-
-drift
region.
The width of the N-
-drift region that determines the reverse voltage capability and the
forward voltage drop which increases with increasing width can be determined by
P
D
mso
L
qN
V
d +=
εε2
1 (1)
Where,
LP = Minority carrier diffusion length
Vm = Maximum blocking voltage
=oε Permittivity of free space
6. Insulated Gate Bipolar Transistor (IGBT) Basics
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=sε Dielectric constant of Si
q = Electronic charge
ND = Doping concentration of N-drift region
Note: Reverse blocking IGBT is rare and in most applications, an anti-parallel diode
(FRED) is used.
Output Characteristics
The plot for forward output characteristics of an NPT-IGBT is shown in Figure 5. It has a
family of curves, each of which corresponds to a different gate-to-emitter voltage (VGE).
The collector current (IC) is measured as a function of collector-emitter voltage (VCE)
with the gate-emitter voltage (VGE) constant.
Figure 5: Output I-V characteristics of an NPT-IGBT [IXSH 30N60B2D1] [3]
A distinguishing feature of the characteristics is the 0.7V offset from the origin. The
entire family of curves is translated from the origin by this voltage magnitude. It may be
recalled that with a P+
collector, an extra P-N junction has been incorporated in the IGBT
structure. This P-N junction makes its function fundamentally different from the power
MOSFET.
7. Insulated Gate Bipolar Transistor (IGBT) Basics
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Transfer Characteristics
The transfer characteristic is defined as the variation of ICE with VGE values at
different temperatures, namely, 25o
C, 125o
C, and -40o
C. A typical transfer characteristic
is shown in Figure 6. The gradient of transfer characteristic at a given temperature is a
measure of the transconductance (gfs) of the device at that temperature.
tConsV
GE
C
fs CE
V
I
g tan=
∂
∂
= (2)
Figure 6: IGBT Transfer Characteristics [IXSH30N60B2]
A large gfs is desirable to obtain a high current handling capability with low gate drive
voltage. The channel and gate structures dictate the gfs value. Both gfs and RDS(on) (on-
resistance of IGBT) are controlled by the channel length which is determined by the
difference in diffusion depths of the P base and N+
emitter. The point of intersection of
the tangent to the transfer characteristic determines the threshold voltage (VGE(th)) of the
device.
8. Insulated Gate Bipolar Transistor (IGBT) Basics
Abdus Sattar, IXYS Corporation 8
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Figure 7: Transconductance Characteristics of an IGBT [IXSH30N60B2]
A typical transconductance (gfs) vs collector current (IC) is shown in Figure 7. The gfs
increases with collector current, flattening out at a peak level slowly for a range of
collector currents. The gfs flattens out because the saturation phenomenon in the parasitic
MOSFET decreases the base current drive of the PNP transistor.
Switching Characteristics
The switching characteristics of an IGBT are very much similar to that of a Power
MOSFET. The major difference from Power MOSFET is that it has a tailing collector
current due to the stored charge in the N-
-drift region. The tail current increases the turn-
off loss and requires an increase in the dead time between the conduction of two devices
in a half-bridge circuit. The Figure 8 shows a test circuit for switching characteristics and
the Figure 9 shows the corresponding current and voltage turn-on and turn-off
waveforms. IXYS IGBTs are tested with a gate voltage switched from +15V to 0V. To
reduce switching losses, it is recommended to switch off the gate with a negative voltage
(-15V).
9. Insulated Gate Bipolar Transistor (IGBT) Basics
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+
-
vcc
DL
DUT
+
-
vCLG
E
CIC
Figure 8: IGBT Switching Time Test Circuit
The turn-off speed of an IGBT is limited by the lifetime of the stored charge or minority
carriers in the N-
-drift region which is the base of the parasitic PNP transistor. The base is
not accessible physically thus the external means can not be applied to sweep out the
stored charge from the N-
-drift region to improve the switching time. The only way the
stored charge can be removed is by recombination within the IGBT. Traditional lifetime
killing techniques or an N+ buffer layer to collect the minority charges at turn-off are
commonly used to speed-up recombination time.
Figure 9: IGBT Current and Voltage Turn-on and Turn-off Waveforms
10. Insulated Gate Bipolar Transistor (IGBT) Basics
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The turn-on energy Eon is defined as the integral of IC .VCE within the limit of 10% ICE
rise to 90% VCE fall. The amount of turn on energy depends on the reverse recovery
behavior of the free wheeling diode, so special attention must be paid if there is a free
wheeling diode within the package of the IGBT (Co-Pack).
The turn-off energy Eoff is defined as the integral of IC .VCE within the limit of 10% VCE
rise to 90% IC fall. Eoff plays the major part of total switching losses in IGBT.
Latch-up
During on-state, paths for current flow in an IGBT are shown in Figure 10. The
holes are injected into the N-
-drift region from the P+
collector form two paths. Part of the
holes disappear by recombination with electrons came from MOSFET channel. Other
part of holes are attracted to the vicinity of the inversion layer by the negative charge of
electrons, travel laterally through the P-body layer and develops a voltage drop in the
ohmic resistance of the body. This voltage tends to forward bias the N+
P junction and if it
is large enough, substantial injection of electrons from the emitter into the body region
will occur and the parasiric NPN transistor will be turned-on. If this happens, both NPN
and PNP parasitic transistors will be turned-on and hence the thyristor composed of these
two transistors will latch on and the latchup condition of IGBT will have occurred. Once
in latchup, the gate has no control on the collector current and the only way to turn-off
the IGBT is by forced commutation of the current, exactly the same as for a conventional
thyristor.
11. Insulated Gate Bipolar Transistor (IGBT) Basics
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Figure 10: ON-state current flow path of an IGBT [3]
If latchup is not terminated quickly, the IGBT will be destroyed by the excessive power
dissipation. IGBT has a maximum allowable peak drain current (ICM) that can flow
without latchup. Device manufacturers specify this current level in the datasheet. Beyond
this current level, a large enough lateral voltage drop will activate thyristor and the
latchup of IGBT.
Safe Operating Area (SOA)
The safe operating area (SOA) is defined as the current-voltage boundary within
which a power switching device can be operated without destructive failure. For IGBT,
the area is defined by the maximum collector-emitter voltage VCE and collector current IC
within which the IGBT operation must be confined to protect it from damage. The IGBT
has the following types of SOA operations: forward-biased safe operating area (FBSOA),
reverse-biased safe operating area (RBSOA) and short-circuit safe operating area
(SCSOA).
12. Insulated Gate Bipolar Transistor (IGBT) Basics
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Forward-Biased Safe Operating Area (FBSOA)
The FBSOA is an important characteristic for applications with inductive loads. It
is defined by the maximum collector-emitter voltage with saturated collector current. In
this mode, both electrons and holes are transported through the drift region, which is
supporting a high collector voltage. The electron and hole concentrations in the drift
region are related to the corresponding current densities by:
nsat
n
qV
J
n
,
= (3)
psat
p
qV
J
p
,
= (4)
where nsatV , and psatV , are the saturated drift velocities for electrons and holes, respectively.
The net positive charge in the drift region is given by,
nsat
n
psat
p
D
qV
J
qV
J
NN
,,
−+=+
(5)
This charge determines the electric field distribution in the drift region. In steady-state
forward blocking condition, the drift region charge is equal to DN . In FBSOA, the net
charge is much larger because the hole current density is significantly larger than the
electron current density.
The breakdown voltage limit in the FBSOA is defined by
4/3
13
)(
1034.5
+
=
N
x
BVSOA (6)
Reverse-Biased Safe Operating Area (RBSOA)
The RBSOA is important during the turn-off transient. The current which can be
turned-off is limited to twice the nominal current of the IGBT. This means a 1200A
IGBT is able to turn-off a maximum current of 2400A. The maximum current is a
function of the peak voltage which appears between collector and emitter during turn-off.
The peak value of VCE is the sum of the DC link voltage and the product of dtdIL C /σ
where σL is the stray inductance of the power circuit. The relation between maximum IC
and VCE can be seen in the RBSOA diagram in Figure 11 for the IGBT [IXSH30N60B2].
13. Insulated Gate Bipolar Transistor (IGBT) Basics
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Figure 11: RBSOA of IGBT [IXSH30N60B2]
In this mode, the gate bias is at zero or at a negative value thus the current transport in the
drift region occurs exclusively via the holes for an n-channel IGBT. The presence of
holes adds charge to the drift region, resulting to the increase in the electric field at the P-
base/N drift region junction. The net charge in the space charge region under the RBSOA
condition is given by:
psat
C
D
qV
J
NN
,
+=+
(7)
where Jc is the total collector current. The avalanche breakdown voltage for RBSOA is
given by:
)(1034.5
,
13
psat
C
SOA
qV
J
xBV = (8)
Short-Circuit Safe Operating Area (SCSOA)
A very important requirement imposed on the power switching device, when used
in motor control applications is that be able to turn-off safely due to a load or equipment
short circuit. When a current overload occurs, collector current rises rapidly until it
exceeds that which the device can sustain with the applied gate voltage. The key to
survivability for the power device is to limit the current amplitude to a safe level for a
period of time that is sufficiently long to allow the control circuit to detect the fault and
turn the device off.
14. Insulated Gate Bipolar Transistor (IGBT) Basics
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The IGBT collector current IC is a function of the gate-emitter voltage VGE and the
temperature T. The transfer characteristic of a 600V/55A IGBT in Figure 6 shows the
maximum collector current IC vs. the gate-emitter voltage VGE. For VGE of 15V the
current is limited to a value of 80A, which is about 1.5 times the nominal value. This is
very low value compared to the short circuit current which is typically 6-7 times the
nominal value.
+ VCC
Q
MOTOR
LSC
La
D
Short-
Circuit
VGE
Figure 12: SCSOA Test Circuit [3]
A circuit diagram for SCSOA test is shown in Figure 12. The short-circuit inductance
value determines the mode of operation of the circuit. When it is in the range of ,uH the
operation is similar to normal switching of inductive load. When IGBT is turned on, VCE
drops to its saturation voltage. The IGBT is saturated and IC is increasing with a dIc/dt of
Vcc/Lsc. It is not allowed to turn-off the IGBT from the saturation region at a collector
current higher than 2 times rated current because this is an operation outside the RBSOA.
In case of short-circuit; it is necessary to wait until the active region is reached. The
IGBT must be turned-off within 10 us to prevent destruction due to overheating.
References
[1] B. Jayant Baliga, “Power Semiconductor Devices” PWS Publishing Company, ISBN:
0-534-94098-6, 1996.
[2] Vinod Kumar Khanna, “Insulated Gate Bipolar Transistor (IGBT): Theory and
Design” IEEE Press, Wiley-Interscience
[3] IXYS, “Power Semiconductors Application Notes, 2002” IXYS Corporation, 3540
Bassett Street, Santa Clara CA 95054, and Phone: 408-982-0700
15. Insulated Gate Bipolar Transistor (IGBT) Basics
Abdus Sattar, IXYS Corporation 15
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[4] Ned Mohan, Tore M. Undeland, William P. Robbins, “Power Electronics: Converters,
Applications and Design” John Willey & Sons, Inc.
[5] Ralph E. Locher, Abhijit D. Pathak, Senior Application Engineering, IXYS
Corporation, “Use of BiMOSFETs in modern Radar Transmitters” IEEE PEDS 2001-
Indonesia
[6] Ralph Locher, “Introduction to Power MOSFETs and their Applications” Fairchild
Semiconductor, Application Note 558, October 1998.