SPICE MODEL of SFH205FA in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Photo diode
PART NUMBER: SFH 205FA
MANUFACTURER: SIEMENS
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

2. PSpice model
Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

3. Dark Current Characteristic
Circuit simulation result
0nA
-2nA
-4nA
-6nA
-8nA
-10nA
-12nA
-14nA
-16nA
-18nA
-20nA
-20V -16V -12V -8V -6V -4V -2V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
SFH_205_FA
V1
V2
0Vdc 0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

4. Circuit simulation result
Comparison graph
Simulation Result
IR(nA)
VR(V) Error (%)
Measurement Simulation
1.000 11.240 11.190 -0.445
1.940 11.420 11.404 -0.140
3.980 11.760 11.756 -0.034
6.060 11.960 12.002 0.351
8.020 12.140 12.186 0.379
10.080 12.320 12.329 0.073
12.000 12.440 12.449 0.072
14.080 12.560 12.555 -0.040
16.000 12.720 12.650 -0.550
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

5. Dark Current Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

6. Radiant Energy (Ee) vs. Photocurrent (IP)
Circuit simulation result
1.0mA
100uA
10uA
1.0uA
100nA
1.0uV 10uV 100uV 1.0mV 5.0mV
I(R1)
V_V2
Evaluation circuit
R1
50
V1
SFH_205_FA
V2
5Vdc 0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

7. Circuit simulation result
Comparison graph
Simulation Result
IP(uF)
2
Ee(uW/cm )
Measurement Simulation Error (%)
10.000 0.630 0.642 1.888
100.000 6.300 6.312 0.189
1000.000 63.000 63.012 0.019
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

8. Forward Current Characteristic
Circuit simulation result
20mA
18mA
16mA
14mA
12mA
10mA
8mA
6mA
4mA
2mA
0A
0V 0.2V 0.6V 1.0V 1.4V 1.8V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1
SFH_205_FA
0Vdc
V2
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

9. Circuit simulation result
Comparison graph
Simulation Result
VF(V)
IF(mA) Error (%)
Measurement Simulation
0.100 0.370 0.380 2.737
0.200 0.412 0.412 -0.027
0.500 0.458 0.459 0.180
1.000 0.496 0.501 1.047
2.000 0.542 0.551 1.720
5.000 0.622 0.627 0.754
10.000 0.690 0.688 -0.223
20.000 0.764 0.756 -1.092
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

10. Forward Current Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

11. Junction Capacitance Characteristic
Circuit simulation result
80p
40p
0
10mV 100mV 1.0V 10V
I(V1)/(30V/10u)
V(U31:C)
Evaluation circuit
V1
0Vdc
V1 = 0
V3
V2 = 30V
TD = 0
TR = 10u SFH_205_FA
TF = 10n V2
PW = 1u 0Vdc
PER = 100u
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

12. Circuit simulation result
Comparison graph
Simulation Result
Cj(pF)
VR(V) Error (%)
Measurement Simulation
0.100 55.500 55.465 -0.063
0.200 50.000 49.452 -1.096
0.500 39.700 39.363 -0.849
1.000 31.450 31.456 0.019
2.000 24.180 24.294 0.471
5.000 16.600 16.643 0.259
10.000 12.320 12.323 0.024
20.000 9.000 9.078 0.862
All Rights Reserved Copyright (C) Bee Technologies Inc. 2004