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Course: Electronic Devices
paper code: EC301
Course Coordinator: Arpan Deyasi
Department of Electronics and Communication Engineering
RCC Institute of Information Technology
Kolkata, India
8/4/2020 1Arpan Deyasi, RCCIIT
Topic: Fermi Level (Intrinsic and Extrinsic)
8/4/2020 Arpan Deyasi, RCCIIT 2
Position of Fermi level
In intrinsic semiconductor
0 0n p=
exp
exp
C FI
C
FI V
V
E E
N
kT
E E
N
kT
 −  
−  
  
 −  
−  
  
F FIE E=
8/4/2020 Arpan Deyasi, RCCIIT 3
Position of Fermi level
2
expC C V FI
V
N E E E
N kT
 + −  
=   
  
1 1
( ) ln
2 2
V
FI C V
C
N
E E E kT
N
 
= + +  
 
8/4/2020 Arpan Deyasi, RCCIIT 4
Position of Fermi level
3/2*
*
C e
V h
N m
N m
 
=  
 
3/2
2
2 *
2 e
C
m kT
N
h
π 
=  
 
3/2
2
2 *
2 h
V
m kT
N
h
π 
=  
 
8/4/2020 Arpan Deyasi, RCCIIT 5
Position of Fermi level
*
*
1 3
( ) ln
2 4
h
FI C V
e
m
E E E kT
m
 
= + +  
 
1
( )
2
FI C VE E E α= + +
* *
h em m>
8/4/2020 Arpan Deyasi, RCCIIT 6
Position of Fermi level
EC
EV
EFI
EFI
α
Intrinsic Fermi level is not at the middle of forbidden region
(EC+EV)/2
(EC+EV)/2
1
( )
2
FI C VE E E α= + +
8/4/2020 Arpan Deyasi, RCCIIT 7
Intrinsic Carrier Concentration
2
0 0in n p=
2
exp
exp
C FI
i C
FI V
V
E E
n N
kT
E E
N
kT
 −  
= −  
  
 −  
× −  
  
8/4/2020 Arpan Deyasi, RCCIIT 8
Intrinsic Carrier Concentration
2
exp C V
i C V
E E
n N N
kT
 −  
−  
  
2
exp g
i C V
E
n N N
kT
  
= −  
  
8/4/2020 Arpan Deyasi, RCCIIT 9
Intrinsic Carrier Concentration
exp
2
g
i C V
E
n N N
kT
  
−  
  
* *
( , , )i e h gn f m m E=
8/4/2020 Arpan Deyasi, RCCIIT 10
Extrinsic Carrier Concentration (n-type)
Consider n-type semiconductor
ND: Donor concentration
0exp C F
C D
E E
N n N
kT
 −  
− ==  
  
exp C F
C D
E E
N N
kT
 −  
=   
  
8/4/2020 Arpan Deyasi, RCCIIT 11
exp C FI
C i
E E
N n
kT
 −  
− =  
  
Extrinsic Carrier Concentration (n-type)
exp C FI
C i
E E
N n
kT
 −  
=   
  
8/4/2020 Arpan Deyasi, RCCIIT 12
Extrinsic Carrier Concentration (n-type)
exp F FI
i D
E E
n N
kT
 −  
=  
  
exp expC FI C F
i D
E E E E
n N
kT kT
 −   −    
=      
      
8/4/2020 Arpan Deyasi, RCCIIT 13
Extrinsic Carrier Concentration (n-type)
ln D
F FI
i
N
E E kT
n
 
= +  
 
ND
EF
EFI
ni=ND
EC
8/4/2020 Arpan Deyasi, RCCIIT 14
Extrinsic Carrier Concentration (p-type)
Consider p-type semiconductor
NA: Acceptor concentration
0exp F V
V A
E E
N p N
kT
 −  
− ==  
  
exp F V
V A
E E
N N
kT
 −  
=   
  
8/4/2020 Arpan Deyasi, RCCIIT 15
Extrinsic Carrier Concentration (p-type)
exp FI V
V i
E E
N n
kT
 −  
− =  
  
exp FI V
V i
E E
N n
kT
 −  
=   
  
8/4/2020 Arpan Deyasi, RCCIIT 16
Extrinsic Carrier Concentration (p-type)
exp expFI V F V
i A
E E E E
n N
kT kT
 −   −    
=      
      
exp FI F
i A
E E
n N
kT
 −  
=  
  
8/4/2020 Arpan Deyasi, RCCIIT 17
Extrinsic Carrier Concentration (p-type)
ln A
F FI
i
N
E E kT
n
 
= −  
 
NA
EF
EFI
ni=NA
EV

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Fermi Level

  • 1. Course: Electronic Devices paper code: EC301 Course Coordinator: Arpan Deyasi Department of Electronics and Communication Engineering RCC Institute of Information Technology Kolkata, India 8/4/2020 1Arpan Deyasi, RCCIIT Topic: Fermi Level (Intrinsic and Extrinsic)
  • 2. 8/4/2020 Arpan Deyasi, RCCIIT 2 Position of Fermi level In intrinsic semiconductor 0 0n p= exp exp C FI C FI V V E E N kT E E N kT  −   −       −   −      F FIE E=
  • 3. 8/4/2020 Arpan Deyasi, RCCIIT 3 Position of Fermi level 2 expC C V FI V N E E E N kT  + −   =       1 1 ( ) ln 2 2 V FI C V C N E E E kT N   = + +    
  • 4. 8/4/2020 Arpan Deyasi, RCCIIT 4 Position of Fermi level 3/2* * C e V h N m N m   =     3/2 2 2 * 2 e C m kT N h π  =     3/2 2 2 * 2 h V m kT N h π  =    
  • 5. 8/4/2020 Arpan Deyasi, RCCIIT 5 Position of Fermi level * * 1 3 ( ) ln 2 4 h FI C V e m E E E kT m   = + +     1 ( ) 2 FI C VE E E α= + + * * h em m>
  • 6. 8/4/2020 Arpan Deyasi, RCCIIT 6 Position of Fermi level EC EV EFI EFI α Intrinsic Fermi level is not at the middle of forbidden region (EC+EV)/2 (EC+EV)/2 1 ( ) 2 FI C VE E E α= + +
  • 7. 8/4/2020 Arpan Deyasi, RCCIIT 7 Intrinsic Carrier Concentration 2 0 0in n p= 2 exp exp C FI i C FI V V E E n N kT E E N kT  −   = −       −   × −     
  • 8. 8/4/2020 Arpan Deyasi, RCCIIT 8 Intrinsic Carrier Concentration 2 exp C V i C V E E n N N kT  −   −      2 exp g i C V E n N N kT    = −     
  • 9. 8/4/2020 Arpan Deyasi, RCCIIT 9 Intrinsic Carrier Concentration exp 2 g i C V E n N N kT    −      * * ( , , )i e h gn f m m E=
  • 10. 8/4/2020 Arpan Deyasi, RCCIIT 10 Extrinsic Carrier Concentration (n-type) Consider n-type semiconductor ND: Donor concentration 0exp C F C D E E N n N kT  −   − ==      exp C F C D E E N N kT  −   =      
  • 11. 8/4/2020 Arpan Deyasi, RCCIIT 11 exp C FI C i E E N n kT  −   − =      Extrinsic Carrier Concentration (n-type) exp C FI C i E E N n kT  −   =      
  • 12. 8/4/2020 Arpan Deyasi, RCCIIT 12 Extrinsic Carrier Concentration (n-type) exp F FI i D E E n N kT  −   =      exp expC FI C F i D E E E E n N kT kT  −   −     =             
  • 13. 8/4/2020 Arpan Deyasi, RCCIIT 13 Extrinsic Carrier Concentration (n-type) ln D F FI i N E E kT n   = +     ND EF EFI ni=ND EC
  • 14. 8/4/2020 Arpan Deyasi, RCCIIT 14 Extrinsic Carrier Concentration (p-type) Consider p-type semiconductor NA: Acceptor concentration 0exp F V V A E E N p N kT  −   − ==      exp F V V A E E N N kT  −   =      
  • 15. 8/4/2020 Arpan Deyasi, RCCIIT 15 Extrinsic Carrier Concentration (p-type) exp FI V V i E E N n kT  −   − =      exp FI V V i E E N n kT  −   =      
  • 16. 8/4/2020 Arpan Deyasi, RCCIIT 16 Extrinsic Carrier Concentration (p-type) exp expFI V F V i A E E E E n N kT kT  −   −     =              exp FI F i A E E n N kT  −   =     
  • 17. 8/4/2020 Arpan Deyasi, RCCIIT 17 Extrinsic Carrier Concentration (p-type) ln A F FI i N E E kT n   = −     NA EF EFI ni=NA EV