This document discusses the position of the Fermi level in intrinsic and extrinsic semiconductors. It begins by defining the intrinsic Fermi level position in an intrinsic semiconductor. It then describes how the Fermi level shifts in n-type and p-type extrinsic semiconductors due to the introduction of donor and acceptor dopants. Equations are provided for calculating the intrinsic carrier concentration and extrinsic carrier concentrations in n-type and p-type materials.